Joint Session |
| Joint Session D: Fundamental Science of Plasma CVD and Its Application |
| Sept. 5 9:00`13:00 |
| 5a-ZC-@/ I,II |
| ’ |
1 |
Conductivity of Microcrystalline Silicon Films Deposited by Surface Wave Plasma CVD |
Nagoya Univ. 1@Endo Hirotaka 1, Junji Sakai 1, Hirotsugu Asano 1, Tatsuo Ishijima 1, Hirotaka Toyoda 1 |
| ’ |
2 |
Pressure dependence of deposition rate of a-Si:H films deposited using multi-hollow discharge plasma CVD method |
Kyushu-univ. 1@*Sato Hiroshi 1, William M. Nakamura 1, Miyahara Hiroomi 1, Matsuzaki Matsuzaki 1, Koga Kazunori 1, and Shiratani Masaharu 1 |
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3 |
Deposition of highly stable a-Si:H films by using H2 diluted SiH4 magnetically enhanced multi-hollow discharges |
Kyushu Univ. 1@*Koga Kazunori 1, Nakamura William Makoto 1, Sato Hiroshi 1, Miyahara Hiroomi 1, Shiratani Masaharu 1 |
| ’ |
4 |
Behavior of hydrogen atom in the high pressure VHF capacitively coupled plasma |
Nagoya Univ. 1,PLANT 2,JST-CREST 3@*Abe Yusuke 1,Takeda Keigo 1,Sekine Makoto 2,3,Hori Masaru 1,2,3 |
| ’ |
5 |
High-rate and low-temperature deposition of microcrystalline Si films by atmospheric-pressure plasma CVD |
Osaka Univ. 1@ Kentaro Ouchi 1, Keita Tabuchi 1, Hiromasa. Ohmi 1, Hiroaki Kakiuchi 1, Kiyoshi Yasutake 1 |
| £’ |
6 |
Variation of Film Crystalline Structure During the Ultrafast Deposition of Crystalline Si Films |
AIST@Haijun Jia, Matsui Kondo |
| ’ |
7 |
FT-IR analysis of produced gas molecules in Atmospheric-pressure Plasma Enhanced Chemical Transport method |
Osaka univ. 1@*Kamada Daiki 1, Katayama Takamasa 1, Ohmi Hiromasa 1, Kakiuchi Hiroaki 1, Yasutake Kiyoshi 1 |
| ’ |
8 |
High-rate deposition of SiO2 films at room temperature by atmospheric-pressure plasma CVD using cylindrical rotary electrode |
Osaka Univ. 1,@*Yamaguchi Yoshihito 1,Nakamura Kei 1,Ohmi Hiromasa 1,Kakiuchi Hiroaki 1,Yasutake Kiyoshi 1, |
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Break 11:00`11:15 |
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9 |
Three-dimensional island growth of cubic boron nitride under low-energy ion bombardment |
Kyushu Univ. 1, NIMS 2@*Kungen Teii 1, Yuusei Mizusako 1, Seiichiro Matsumoto 2 |
| ’ |
10 |
Preparation of p-type BN / n-type Si hetero junction by laser assisted plasma CVD method |
NIMS 1,Nihon Univ. 2,Tokyo Inst. of Tech. 3@* Hirano Daisuke 2,Komatsu Shojiro 1,Sato Yuhei 3,Takizawa Takeo 2,Nakamura Katsumitsu 2 |
| ’ |
11 |
Photovoltaic effects in sp3-bonded BN / Si hetero junction prepared by laser-assisted plasma CVD |
NIMS 1, Tokyo Inst. of Tech. 2, Nihon Univ. 3@*Sato Yuhei 2, Komatsu Shojiro 1, Hirano Daisuke 3, Watanabe Takayuki 2 |
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12 |
Laser-assisted plasma CVD of sp3-bonded nH-BN (n=5,6,10,12); the growth mechanism and strucutre |
NIMS 1,Tokyo Inst. of Tech. 2, Nihon Univ. 3 @*Komatsu Shojiro 1, Sato Yuhei 2, Hirano Daisuke 3, Watanabe Takayuki 2, Takizawa Takeo 3ANakamura Katsumitsu 3 |
| ’ |
13 |
Control of deposition profile of carbon films in trenches by ion and radical fluxes |
Kyushu Univ. 1, Osaka Univ. 2, Nagoya Univ. 3, JST,CREST 4@*Umetsu Jun 1, Inoue Kazuhiko 1, Nomura Takuya 1, Koga Kazunori 1,4, Shiratani Masaharu 1,4, Setsuhara Yuichi 2,4 , Sekine Makoto 3,4, Hori Masaru 3,4 |
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14 |
Numerical and experimental studies for synthesis of diamond-crystals with large area |
DiaRC, AIST@*H. Yamada, A. Chyahara, Y. Mokuno, and S. Shikata |
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15 |
Growth of Nano Carbon Composites in Hot-Filament CVD |
Yokohama National Univ. 1@Saito Tsuyoshi 1,Chiba Hidejiro 1,Isono Toshinari 1,Ogino Toshio 1 |
| Joint Session F: Physics and Applications of Carbon Nanotubes |
| Sept. 3 10:00`18:30 |
| 3a-ZS-@/ I,II,III |
| £’ |
1 |
Illumination effect on negative differential resistance in fullerene encapsulated double-walled carbon nanotubes |
Tohoku Univ.1
@*Yongfeng Li,Toshiro Kaneko, Rikizo Hatakeyama |
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2 |
Temperature Effects in Resonance Condition of Raman Spectra from Single-Walled Carbon Nanotubes |
NTT BRL 1, Toyo Univ. 2@*Uchida Takashi 1,2, Kobayashi Yoshihiro 1 |
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3 |
13C-concentration dependence of Raman spectora of 13C-entiched single walled carbon nanotubes |
RIKEN 1,TUS 2, Chiba Univ. 3@F*M.Oie 1,2,N.Yamazaki 1,3,T.Mori 1,T.Yamaguchi 1,Y.Homma 2,K.Ishibashi 1 |
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4 |
Temperature dependence of Raman scattering from double walled carbon nanotubes |
Kyoto Inst. of Technology 1,Wakayama Univ. 2 @*Hitoshi Kakehi 1,Ryoji Naito 1,Kenji Kisoda 2,Koji Nishio 1,Toshiyuki Isshiki 1,Hiroshi Harima 1 |
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5 |
Activation energy of healing of low-energy irradiation-induced defects in single-walled carbon nanotubes |
NTT Basic Research Labs. NTT Corp. 1, Tokyo Univ. of Science 2@*Yamaya Kenji 1,2, Suzuki Satoru 1, Homma Yoshikazu 2, Kobayashi Yoshihiro 1 |
| ’ |
6 |
Dependence of Defect Generation on Structure of Carbon Nanotube due to Neutral Beam Irradiation |
Inst. of Fluid Science, Tohoku Univ. 1, Graduate School of Environmental Studies, Tohoku Univ. 2, NTT Corp. 3@*Akira Wada 1, Yoshinori Sato 2, Satoru Suzuki 3, Yoshihiro Kobayashi 3,
and Seiji Samukawa 1 |
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Break 11:30`11:45 |
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| ’ |
7 |
Photoluminescence spectra from single-walled carbon nanotubes with defects |
Tokyo Univ. of Science 1@*Chiashi Shohei 1, Nagatsu Kotaro 1, Hanashima Tateki 1, Homma Yoshikazu 1 |
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8 |
Studies on Electronic Structures of Single-Walled Carbon Nanotubes Synthesized Controlling the Diameter by Optical Absorption Spectroscopy |
AIST 1, JST-PRESTO 2, Meijo Univ. 3@Takeshi Saito 1,2, Shigekazu Ohmori 1, Bikau Shukla 1, Motoo Yumura 1, Sumio Iijima 1,3 |
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9 |
Progress in Separation of Carbon Nanotubes by Gel Electrophoresis |
AIST, NRI@*Takeshi Tanaka, Hehua Jin, Yasumitsu Miyata, Syunjirou Fujii, Hiroshi Suga, Yasuhisa Naitoh, Hiromichi Kataura |
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10 |
Separation of metallic and semiconducting single-wall carbon nanotubes by using sucrose as a gradient medium |
NRI-AIST 1, JST-CREST 2@Kazuhiro Yanagi 1, Toshie Iitsuka 1, Toshijiro Fujii 1, Hiromichi Kataura 1 2 |
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11 |
Optimizing Separation Efficiency of Carbon Nanotube Field-Effect Chromatography |
Yamagata Univ. 1, Shimadzu Corp. 2@Yuhki Orinouchi 1, Keisuke Wada 1, Akara Hashimoto 2, Yasushi Suzuki 2, Yasuyuki Watanabe 2, *Masahito Sano 1 |
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Lunch 13:00`14:00 |
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| 3p-ZS-@/ I,II,III |
| ’ |
1 |
Graphene / graphite formation by heat treatment of a 3C-SiC(111) thin film grown on a Si(110) substrate |
Research Institute of Electrical Communication, Tohoku Univ. 1, JST-CREST. 2@*Miyamoto Yu 1 2, Suemitsu Maki 1 2, Handa Hiroyuki 1 2, Konno Atsushi 1 2 |
| ’ |
2 |
Approach to graphene layers formation by thermal decomposition using SiC thin film grown by HW-CVD |
RIE Shizuoka Univ 1
@*Ogawa Yasuhiro 1,Nakamura Atushi 1,Tanaka Akira 1,Temmyo Jiro 1 |
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3 |
Raman study for epitaxial graphene on 6H-SiC |
Kyoto Inst. of Tech. 1, Wakayama Univ. 2, Kyusyu Univ. 3, Univ. of Fukui 4@*Ryoji Naito 1, Hitoshi Kakehi 1, Noriyuki Hasuike 1, Kenji Kisoda 2, Hiroshi Harima 1, Satoru Tanaka 3, Akihiro Hashimoto 4 |
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4 |
Interfacial structure of graphene on SiC substrate |
EcoTopia Science Inst., Nagoya Univ. 1, JFCC 2@*Wataru Norimatsu 1,2, Michiko Kusunoki 1,2 |
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5 |
LEED observation of multilayer graphene grown on vicinal SiC(0001) surface |
Kyushu Univ. 1, Kyushu Univ. 2@Kenjiro Hayashi 1, Kohei Morita 2, Miyuki Suzuki 1, Seigi Mizuno 1, Satoru Tanaka 2, Hiroshi Tochihara 1 |
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6 |
In-situ RHEED observation of Graphene formation on SiC surfaces via self-modification |
Kyushu Univ. 1@*Srey Chenda 1, Satoru Tanaka 1 |
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7 |
Multi-Layer Graphene Grown by Photoemission-Induced Plasma CVD |
CRESTEJST 1, Tohoku Univ. 2, JASRI 3, Fujitsu ltd. 4@Ogawa Shuichi 1,2, Takami, Tomohide 1,2, Sumi Haruki 2, Saikubo Akihiko 1,3, Ikenaga Eiji 1,3, Nihei Mizuhisa 1,4, Takakuwa Yuji 1,2 |
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8 |
Evaluation for Electronic State of Multi-Layer Graphene by Hard X-ray Photoemission Spectroscopy |
CRESTEJST 1, JASRI 2, Tohoku Univ. 3, Fujitsu Ltd. 4@*Saikubo Akihiko 1,2, Ikenaga Eiji 1,2, Ogawa Shuichi 1,3, Takami Tomohide 1,3, Sumi Haruki 3, Takakuwa Yuji 1,3, NIhei Mizuhisa 1,4 |
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9 |
Novel carbon structure II: Graphene multi-layers spontaneously formed on the top of aligned carbon nanotubes |
Nanotechnology Research Center, Fujitsu Laboratories Ltd. 1, SPring-8/JASRI 2@*Kondo Daiyu1, Sato Shintaro1, Nihei Mizuhisa1, Ikenaga Eiji2, Kobata Masaaki 2, Jung-Jin Kim2, Kobayashi Keiuke2, Awano Yuji1 |
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Break 16:15`16:30 |
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10 |
Carbon films synthesized by high temperature CVD using organic semiconductor sources |
Univ. Tokyo@Toshihiro Shimada 1,Takuya Noguchi 1, Akinori Hanzawa 1, Manabu Ohtomo 1, Tetusya Hasegawa 1 |
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11 |
Structural and Electronic Properties of Graphene Sheets prepared by Electroless Plating |
Hokkaido Univ. 1, Kotobuki Sabgyo 2, SEP 3, AIST 4@*Tokumoto Hiroshi 1, Ukita Keiko 1, Kunioku Hideo 2, Tokui Hiroki 2, Yano Masami 2, Sohma Michiaki 3, Shimamura Kiyotaka 3, Tanaka Miyuki 4, Suga Hiroshi 4, Shimizu Tesuo 4 |
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12 |
Structures and growth mechanism of carbon nanofibers |
AIST 1, Kyushu Univ. 2@*An Bai 1, Fukuyama Seiji 1, Yokogawa Kiyoshi 1, Yoon Seong-Ho 2, Mochida Isao 2 |
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13 |
Effect of substrate on growth of carbon nanowall III |
Gifu Univ. 1@*Masaru Hisanaga 1,Keiichiro Tada 1,Shouhei Ito 1,Yousuke Nakanishi 1,Seiji Shimabukuro 1,Takashi Itoh 1,Shuichi Nonomura 1 |
| ’ |
14 |
Evaluating electrical characteristics of CNW/Si junction. |
Nagoya Univ. 1, Aichi Inst. of Tech. 2, NU Eco-Engineering 3, Meijo Univ. 4@*Takeuchi Wakana 1, Tokuda Yutaka 2, Kano Hiroyuki 3, Hiramatsu Mineo 4, Hori Masaru 1 |
| ’ |
15 |
Synthesis of Carbon Nanowalls by Ion and Radical Independent Control (II) |
Nagoya Univ. 1, Katagiri Engineering 2, Meijo Univ. 3@*Kondo Shingo 1, Yamakawa Koji 2, Den Shoji 2, Hiramatsu Mineo 3, Sekine Makoto 1, Hori Masaru 1 |
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16 |
Effect of hydrogen radical treatment to substrate on growth of carbon nanowalls |
Gifu Univ. 1@*Tada Keiichiro 1,Hisanaga Masaru 1,Nakanishi Yosuke 1,Itoh Shouhei 1,Itoh Takashi 1,Nonomura Shuichi 1 |
| ’ |
17 |
Fabrication of carbon nanowalls using radical injection plasma enhanced CVD and their electrochemical evaluation |
Meijo Univ 1,Nagoya Univ 2@*Watanabe Hitoshi 1,Hiramatsu Mineo 1,Hori Masaru 2 |
| Joint Session F: Physics and Applications of Carbon Nanotubes |
| Sept. 4 9:45`18:30 |
| 4a-ZS-@/ I,II,III |
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1 |
Carbon nanotube growth at low temperature using Al2Ox buffer layer by alcohol gas source method |
Meijo Univ. 1@*Kuninori Sato 1,Takahiro Maruyama 1,Sigeya Naritsuka 1 |
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2 |
Synthesis of Single-Walled Carbon Nanotubes at Low-Temperatures by Hot-Filament CVD |
Nippon Inst. of Tech. 1@Ishizuka Kei 1, Koshika Fumitaka 1, Morimura Kouji 1, Ishikawa Yutaka 1 |
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3 |
Hot-filament CVD growth of single-walled carbon nanotubes from gold catalyst at lower temperature |
NTT Basic Research Labs 1, Tokyo Univ. of Sci 2@*Sakai Hiroshi 1,2, Takagi Daisuke 1, Kobayashi Yoshihiro 1 |
| ’ |
4 |
Unidirectional growth of single-walled carbon nanotubes |
Kyushu Univ.@*Ishigami Naoki 1, Ago Hiroki 1 2 3, Nishi Tetsushi 1, Ikeda Ken-ichi 1, Tsuji Masaharu 1 2, Ikuta Tatsuya 4, Takahashi Koji 4 |
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5 |
Effect of Steps on the Growth of Carbon Nanotubes on Sapphire Substrates (II) |
Tokyo Univ. of Science 1, NTT Basic Research Lab. 2@Yamada Kazuki 1, Chokan Tomohito 1, Takagi Daisuke 2, Chiashi Shohei 1, Homma Yoshikazu 1 |
| ’ |
6 |
Growth of horizontally-aligned SWNTs on surface-modified silicon substrate |
Kyushu Univ. 124,PRESTO-JST 3 @*Naoki Yoshihara 1,Hiroki Ago 123, Kenta Imamoto 1,Masaharu Tsuji 12,Tatsuya Ikuta 4,Koji Takahashi4 |
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Break 11:15`11:30 |
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7 |
Growth of Horizontally Aligned Single-Walled Carbon Nanotubes on a Crystalline Quartz Substrate |
Osaka Univ. 1@*Tanaka Yuya 1, Nunoya Kazuki 1, Suto Hirohumi 1, Fujii shunjiro 1, Winadda Wongwiriyapan 1, Honda Shinichi 1, Katayama Mitsuhiro 1 |
| ’ |
8 |
Fabrication of suspended single wall carbon nanotubes by using transfer printing |
RIKEN 1@Tabata Hiroshi 1, Ishibashi Koji 1 |
| £ |
9 |
Investigation of Effective Precursor for the Formation of SWCNTs in e-DIPS process |
AIST 1, JST-PRESTO 2, Meijo Univ. 3@*Bikau Shukla 1, Takeshi Saito 1,2, Motoo Yumura 1, Sumio Iijima 1,3 |
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10 |
Theoretical research for developping picotube used Ab initio calculation |
Osaka Univ. 1@*Yamada Atsushi 1,Kishi Hirofumi 1,Kunikata Shinichi 1,Kasai Hideaki 1 |
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11 |
Diagnostics of Vertical-aligned Single-walled Carbon Nanotube Forest by Using a Telecentric Optical System |
AIST 1@*Satoshi Yasuda 1, Don, N, Futaba 1, Morio Yumura 1, Sumio Iijima 1, Kenji Hata 1 |
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12 |
Lowering growth-yield of CNTs induced by exposing metal catalysis to air |
NTT Basic Res. Labs. 1@*Fumihiko Maeda 1, Yoshihiro Kobayashi 1 |
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Lunch 13:00`14:00 |
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| 4p-ZS-@/ I,II,III |
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1 |
Integrated 3-dimensional Micro-electro-mechanical devices from aligned carbon nanotube wafer |
AIST 1, Brigham Young Univ. 2@*Yuhei Hayamizu 1, Takeo Yamada 1, Kohei Mizuno 1, Robert C. Davis 2, Don N. Futaba 1, Motoo Yumura 1, Kenji Hata 1 |
| ’ |
2 |
Energy Loss Induced by Gas Molecules of Cantilever Carbon Nanotube Vibration |
Osaka Pref. Univ. 1, CREST-JST 2@*Shun Fukami 1, Shunichi Sawano 1 , Kazuhiro Nakachi 1, Seiji Akita 1,2 |
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3 |
Plane fastener using brush-like carbon nanotubes |
Osaka Univ. 1@*Hirahara Kaori 1, Ajioka Shoichi 1, Nakayama Yoshikazu 1 |
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4 |
Atomic-scale Environmental Transmission Electron Microscopy Observation of Carbon Nanotube Growth from Iron Carbide nanoparticles |
Osaka University@Hideto Yoshida, Tetsuya Uchiyama, Yusuke Tanemoto, Hideo Kohno, Seiji Takeda |
| ’ |
5 |
Attachment of Carbon Nanotubes on a Substrate using Fullerene Molecules |
Osaka Univ. 1, CREST-JST 2@*Senga Ryosuke 1,2, Maruyama Hiroyuki 1,2, Hirahara Kaori 1,2 Nakayama Yoshikazu 1,2 |
| ’ |
6 |
Static Friction Force between Two Parallel Carbon Nanotubes |
Osaka Univ. 1@Atsunori Ishikawa 1, Kaori Hirahara 1, Yoshikazu Nakayama |
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7 |
Molecular dynamics Calculation of Nano capsule trap phenomenon in a carbon nanotube. |
Osaka Pref. Univ. 1, Osaka Univ. 2@*Yoshinori Ueno 1, Hiroshi Somada 1,2, Kaori Hirahara 2, Yoshikazu Nakayama 2, Seiji Akita 1 |
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8 |
A Molecular Dynamics Simulation of Electron-Beam Fabrication of Carbon Nanomaterials |
Osaka Pref. Univ. 1@*Mimura Ryosuke 1, Yasuda Masaaki 1, Kimoto Yoshihisa 1, Majima Takashi 1, Kawata Hiroaki 1, Hirai Yoshihiko 1 |
| ’ |
9 |
Thermal Conductivity Characterization of Carbon Nanotubes in Solution Using Biomolecular as a Probe |
IMRAM, Tohoku Univ.@* Okada Takeru 1, 2, Ishijima Akihiko 1, 2 |
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Break 16:15`16:30 |
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10 |
Application for heat release devices of carbon nanotubes produced by thermal decomposition of SiC |
JFCC 1, EcoTopia Science Inst., Nagoya Univ. 2, Sumitomo Electric Industries 3@*Wataru Norimatsu 1,Michiko Kusunoki 1,2, Chihiro Kawai 3 |
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11 |
Atomic Level Evaluation of Carbon Nanotubes by the Scanning Atom Probe |
Kanazawa Inst. Technol. 1@*Nishikawa Osamu 1, Taniguchi Masahiro 1 |
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12 |
Field-emission characteristics and electrical conductivity of Carbon Nanofiber/Elastomer Composite Sheets |
Grad. School of Eng. Kobe Univ. 1, NAIST 2, Nisshin Kogyo 3@*Kawamura Masashi 1, Kita Takashi 1, Wada Osamu 1, Yanagi Hisao 2, Magario Akira 3, Noguchi Toru 3 |
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13 |
Effect of CNF Volume and N2 Concentration on Side Electron Emission Device (SEED) Using CNF/Al Composites |
NAIST 1,Kobe Univ. 2,Nisshin Kogyo 3, @Tanaka Hirotaka 1,Nakamura Hironao 1,Yanagi Hisao 1,Kita Takashi 2,Magario Akira 3,Yokoyama Kazuyuki 3,Noguchi Toru 3, |
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14 |
Raising Treatment of Carbon-Nanotwist Field Emitter by Streamer Discharge |
Toyohashi Univ. of Technol. 1, Futaba Corporation 2, Tokai Carbon Co., Ltd. 3, Toho Gas Co., Ltd. 4@*Shinohara Yuichiro 1, Yokota Masashi 1, Shiki Hajime 1, Suda Yoshiyuki 1, Oke Shinichiro 1, Takikawa Hirofumi 1, Itoh Shigeo 2, Yamaura Tatsuo 2, Fujimura Youhei 2, Yoshikawa Kazuo 3, Miura Kouji 3, Morioki Masakatsu 4 |
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15 |
Directly grown Patterned CNT Emitter on Glass for FEL |
Kochi Univ. Tech.@*Furuta Hiroshi 1, Kawaharamura Toshiyuki 1, Furuta Mamoru 1, Hirao Takashi 1 |
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16 |
Control of electron emitter density of aligned carbon nanotubes in plasma CVD and their field-emission properties |
Kyoto Inst. Technol. 1,Nissin Electric Co. Ltd. 2@*Odani Kazunori 1,Asai Yuta 1,Hayashi Yasuaki 1,Matsuba Teruaki 2,Utsunomiya Risa 2 |
| £ |
17 |
Ionization Vacuum Gauge with a Carbon Nanotube Cold Cathode |
Nagoya Univ. VBL 1, Dept. of Quantum Eng., Nagoya Univ. 2, Noritake Co. Ltd. 3@Huarong Liu 1,2. Hitoshi Nakahara 2. Sashiro Uemura 3. Yahachi Saito 1,2 |
| Joint Session F: Physics and Applications of Carbon Nanotubes |
| Sept. 5 9:00`12:00 |
| 5a-ZR-@/ I,II,III |
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1 |
Flattening of Carbon Nanocoils by Acid Treatment. |
Toyohashi Univ. Technol. 1, Toho Gas Co., Ltd 2, Tokai Carbon Co., Ltd 3, Futaba Corporation 4@*Yokota Masashi 1, Shinohara Yuichiro 1, Shiki Hajime 1, Suda Yosiyuki 1, Oke Shinichiro 1,Takikawa Hirofumi 1, Morioki Masakatsu 2, Miura Kouji 3, Yosikawa Kazuo 3, Fujimura Youhei 4, Yamaura Tatsuo 4, Ito Shigeo 4 |
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2 |
High-purity Carbon Nanotube-coated Copper Nanowires |
Mie Univ.@*Kito Hironobu 1, Koshio Akira 1, Kokai Fumio 1 |
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3 |
Mass transfer of a copper rod encapsulated in carbon nanotube studied by in-situ transmission electron microscopy |
Nagoya Univ. 1, Mie Univ. 2@*Kimura Fumitaka 1,Asaka Koji 1,Nakahara Hitoshi 1,Kokai Fumio 2,Saito Yahachi 1 |
| ’ |
4 |
Graphitization observed at the Interface of Amorphous Carbon and Liquid Gallium |
PRESTO JST 1, Univ. of Tsukuba 2, SUMITOMO ELECTRIC INDUSTRIES 3@*Ueki Ryuichi 1,2, Miyazawa Yousuke 2, Hikata Takeshi 3, Fujita Jun-ichi 1,2 |
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5 |
Morphology Control of Ion-Induced Carbon Nanofibers Grown at Room Temperature: Effect of Ion-Incidence Angle |
Nagoya Inst. Technol 1@*Suzuki Takahito 1, Yamaguchi Kouhei 1, Hayashi Yasuhiko 1, Tanemura Masaki 1 |
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Break 10:15`10:30 |
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6 |
Effects of hydrogen gas on CNT growth in SiC surface decomposition |
Dept. of Materials Science & Engineering, Meijo Univ.@*Ueda Kazushi 1, Iijima Yuuki 1, Maruyama Takahiro 1, Naritsuka Shigeya 1 |
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7 |
Growth of Carbon Nanotubes by Carbon Transmission Method |
Sumitomo Electric Ind. Ltd 1, Tech. Research of Osaka Pref. 2, Kyoto Univ. 3@*Hikata Takeshi1, Hayashi Kazuhiko1, Mizukoshi Tomoyuki2, Sakurai Yoshiaki2, Ishigami Itsuo2, Aoki Takaaki3, Seki Toshio3, Matsuo Jiro3 |
| ’ |
8 |
Growth of Carbon Nanotubes from DLC Thin Films as Carbon Source |
Kochi Univ. Technol. 1@*Harigai Tooru 1, Hatta Akimitsu 1 |
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9 |
Direct measurement of catalyst activity for low-temperature carbon nanotube growth using in situ FTIR analyzer |
MIRAI-Selete 1@*Nozue Tatsuhiro 1, Sato Shintaro 1, Kawabata Akio 1, Kondo Daiyu 1, Murakami Tomo 1, Nihei Mizuhisa 1, Awano Yuji 1 |
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10 |
Effect of catalyst on CNTs growth with water assisted CVD. |
Research Inst. for Nanodevices, Kochi Univ. of Tech. 1, Kochi Univ. of Tech. 2, Research Inst., Kochi Univ. of Tech. 3@*Kawaharamura Toshiyuki 1, Furuta Hiroshi 1, Kawabata Katsumasa 2, Furuta Mamoru 1, Hatta Akimitsu 3, Hirao Takashi 1 |
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11 |
Formation of Carbon Nanotubes/Fibers by Metal-free Thermal CVD |
Mie Univ.@*Suzuki Kentaro 1,Koshio Akira 1,Ichiko Haruhisa 1,Inoue Tsuyoshi 1,Tango Yuta 1,Kokai Fumio 1 |
| 19.1 Joint Session F: Physics and Applications of Carbon Nanotubes |
| Sept. 5 9:00`15:00 |
| 5a-ZS-@/ I,II,III |
|
1 |
Development of Force Transducer by Using CNT Compound Materials |
Dept. of Biomedical Eng., Musashi Inst. of Technol., 1Division of Life Sci., Grad. School of Sci. and Eng., Saitama Univ.@*Takamichi Hirata, Takatsugu Yanaka1, Satoshi Sakahara1, Kanako Koike1, Chihiro Tsutsui1, Takafumi Sakai1, Masahiro Akiya |
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2 |
Fabrication of n-type CNTFETs with Si3N4 Passivation Film and Sensor Applications |
ISIR Osaka Univ. 1@*Yamamoto Yasuki 1, Maehashi Kenzo 1, Ohno Yasuhide 1, Inoue Koichi 1, Matsumoto Kazuhiko 1 |
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3 |
Hydrogen Detection Using Decorated with Palladium Carbon Nanotubes by Microplasma in Water |
Kyushu Univ. 1@Suehiro Junya 1, Kotegawa Makoto 1, Imasaka Kiminobu 1 |
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4 |
Exploring Electronic Transport and Desorption Properties of Atomic-Hydrogen-Adsorbed Carbon Nanotube Thin Film |
Grad. Sch. Eng., Osaka Univ. 1, Res. Center for UHVEM, Osaka Univ. 2@*Yoshihara Kumiko 1, Ishida Norihiro 1, Inoue Satoshi 1, Okabayashi Yusuke 1, Wongwiriyapan Winadda 1, Nishimoto Yoshihiro 1, Oura Kenjiro 2, Honda Shinichi 1, Kuwahara Yuji 1, Katayama Mitsuhiro 1 @@@
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| ’ |
5 |
Carbon nanotube synthesis from submicronsize vias |
Waseda Univ. 1, MIRAI-Selete 2@*Iizuka Masatomo 1, Ishimaru Kentaro 1, Yokoyama Daisuke 1, Iwasaki Takayuki 1, Sato Sintaro 2, Nihei Mizuhisa 2, Awano Awano 2 and Kawarada Hirosi 1 |
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6 |
Chemical Mechanical Polishing Technology for Composite of CNT and Spin on Dielectric coating |
MIRAI-Selete 1@*Takashi Hyakushima 1,Tatsuhiro Nozue 1,Akio Kawabata 1,Masaaki Norimatsu 1,Tomo Murakami 1,Daiyu Kondo 1,Mari Ohfuchi 1,Shintaro Sato 1,Mizuhisa Nihei 1,Yuji Awano 1
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Break 10:30`10:45 |
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7 |
Conductive Characteristic of Carbon Nanotube FET by Scanning Gate Microscopy |
Dept. of Quantum Eng. Nagoya Univ. 1, VBL Nagoya Univ. 2 @*Yuki Okigawa 1, Yutaka Ohno 1, Shigeru Kishimoto 1 2, Takashi Mizutani 1 |
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8 |
Alignment Control and Electrical Characterization for Isolated Single Wall Carbon Nanotubes in SDS Solution |
Electronic Sci. & Eng.,Kyoto Univ. 1, ICC,Kyoto Univ. 2@*Katsuhiro Kaneko 1, Yuji Miyato 1, Kei Kobayashi 2, Kazumi Matsushige 1, Hirofumi Yamada 1 |
|
9 |
Local Potential Investigations of Interfaces between SWNTs and Metal Electrodes in Electrical Conduction |
Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, ICC, Kyoto Univ. 2@*Yuji Miyato 1, Kei Kobayashi 2, Kazumi Matsushige 1, Hirofumi Yamada 1 |
|
10 |
Fabrication of ring structures consisting of individual single wall carbon nanotube |
RIKEN 1, Tokyo Univ. of Sci. 2@*Suzuki Takayuki 1,2, Hida Akira 1, Ishibashi Koji 1 |
|
11 |
Carbon nanotube noise devices for the stochastic resonance with APG grown Co catalyst |
ISIR, Osaka Univ. 1@*Toshio Kawahara 1, Yasuhide Ohno 1, Kenzo Maehashi 1, Kazuhiko Matsumoto 1, Tomoji Kawai 1 |
| |
|
Lunch 12:00`13:00 |
|
| 5p-ZS-@/ I,II,III |
|
1 |
Changes of photoabsorption spectra during the formation of carbon nanotube rings |
RIKEN 1, Tokyo Univ. of Sci. 2@*Hida Akira 1, Suzuki Takayuki 1,2, Ishibashi Koji 1 |
|
2 |
Fabrication and characterization of quantum structures with carbon nanotubes and molecules |
RIKEN 1@*Hida Akira 1, Ishibashi Koji 1 |
| ’ |
3 |
Conversion between particle nature and wave nature of hole in SWNT transistor by gate voltage |
AIST 1, JSPS 2, ISIR Osaka Univ. 3@*Takafumi KAMIMURA 1, 2, Yasuhide OHNO 3, Kazuhiko MATSUMOTO 1, 3 |
|
4 |
Carbon nanotube field-effect transistors with a nanogap structure. |
ISIR, Osaka Univ.@Ohno Yasuhide 1, Asai Yoshihiro 1, Maehasi Kenzo 1, Inoue Koichi 1, Matsumoto Kazuhiko 1 |
| ’ |
5 |
Influence of insulator deposition in carbon nanotube FETs |
Dept. of Quantum Eng., Nagoya Univ. 1,VBL, Nagoya Univ. 2@Moriyama Naoki 1,Ohno Yutaka 1,Kisimoto Sigeru 1,2,Mizutani Takasi 1 |
| £ |
6 |
n-type single-walled carbon nanotube FETs with Sm as contact electrodes |
Nagoya Univ. 1@*Prakash R. Somani 1, A. Kobayashi 1, Y. Ohno 1, S. Kishimoto 1, and T. Mizutani 1 |
| ’ |
7 |
Electrical Characteristics of all SWCNTs film fablicated by ink-jet printing |
IMR, Tohoku Univ., AIST, CREST/JST, Brother Industry, Ltd.@*Okimoto Haruya1, Takenobu Taishi1, Yanagi Kazuhiro2,3, Miyata Yasumitsu2, Kataura Hiromichi2,3, Asano Takeshi4, Iwasa Yoshihiro1 |
|
8 |
Light Emission Properties of Exohedrally Modified CNT-FET |
Gradu. Sci. Tohoku Univ. 1, WPI Tohoku Univ. 2, Univ. Tsukuba 3, Tokyo Gakugei Univ. JST/PRESTO 4@Kumashiro Ryotaro 1, Komatsu Naoya 1, Nouchi Ryo 2, Akasaka Takeshi 3, Maeda Yutaka 4, Tanigaki Katsumi 1.2 |
| Joint Session K: Zinc Oxide and Related Functional Materials |
| Sept. 3 9:00`17:45 |
| 3a-N-@/ I,II |
|
1 |
Enhancement of gas response of ZnO micro-nano structured films through plasma treatment |
The Univ. of Tokyo@Nagatomo Ippei ,*Uchino Ryohei,Shuzo Masaki , Yamada Ichiro,Delaunay Jean-Jacques |
| £ |
2 |
Growth of ZnO nanowires using ZnS substrates with Ga droplets |
Shizuoka Univ. 1,2,3@Qing Yang 1, T. Yasuda 2, H. Tatsuoka 3 |
| £ |
3 |
Growth of Aligned ZnO Nanowires by NAPLD and Their Optical Characterizations |
Fudan Univ. 1,Kyushu Univ. 2@*Guo Ruiqian 1,Matsumoto Masato 2,Matsumoto Takafumi 2,Higashihata Mitsuhiro 2,Okada Tatsuo 2 |
|
4 |
Transport properties of ZnO nanowires II. |
Chiba Univ. 1@*Toshiyuki Wagai 1,Kazuhiko Amano 1,Kazunuki Yamamoto 1 |
|
5 |
Control of the Growth Density of ZnO Nanowires Utilizing Alkaline Species of the Substrate |
Shinshu Univ.@*Htay Myo Than, Hashimoto Yoshio, Ito Kentaro |
|
6 |
Field Emission Properties of ZnO Nanowires Prepared by Ultrasonic Spray Pyrolysis |
Shinshu Univ.@*Tanaka Takanori, Htay Myo Than, Tajima Yoshinori, Hashimoto Yoshio, Ito Kentaro |
| |
|
Break 10:30`10:45 |
|
|
7 |
Atmospheric-pressure CVD Growth of ZnO Nanowires Using EMOD Solution for NiO Films as Catalyst |
Ehime Univ. 1@*Terasako Tomoaki 1, Saito Daisuke 1, Taira Keisuke 1, Nishinaka Atsushi 1, Miyata Akira 1, Shirakata Sho 1 |
|
8 |
Photocatalytic ability of radial-shaped ZnO nanorods prepared by one-step chemical synthesis in aqueous solutions |
Res. Inst. Elec. Mag. Mater. 1@Usui Hiroyuki 1 |
|
9 |
ZnO micro structures formed to oxide substrate with hydrothermal synthesis |
Nagoya Institute of Technology 1@Wada Shogo 1,Ushimizu Koji 1,Takeuchi Hiroki 1,Ono Shingo 1,*Ichikawa Yo 1 |
|
10 |
Characterization and Fabrication of ZnO Nanoparticles by Using Microemulsion Method |
Murata Mfg. Co., Ltd.@*Inoguchi Masashi 1, Suzuki Keigo 1, Tanaka Nobuhiko 1, Kageyama Keisuke 1, Takagi Hiroshi 1, Sakabe Yukio 1 |
| ’ |
11 |
Quantum-confined Stark effect and free carrier screening effect in ZnO nanoparticles |
Waseda Univ. 1, Div. of Electronic and Computer Engineering Hanyang Univ. 2, Div. of Materials Science and Engineering Hanyang Univ. 3 @Yu Saeki 1, Takahumi Ushiyama 1, Yoshiaki Nakazato 1, Sotaro Izumi 1, Atsushi Tackeuchi 1, Jae Hun Jung 2, Fushan Li 2, Tae Whan Kim 2, Young-Ho Kim 3 |
| |
|
Lunch 12:00`13:00 |
|
| 3p-N-@/ I,II |
|
1 |
Temperature Dependence of Carrier Concentration and Optical Properties of ZnO Single Crystal Coated with KCl |
Nanomaterials Microdevices Research Center, Osaka Inst. of Tech. 1, Elec., Info. and Commun. Engineering, Osaka Inst. of Tech. 2@Akira Fujimoto 1, Yoshiyuki Harada 1, Kouta Doi 2, Hitoshi Fukui 2, Tokuo Yodo 2 |
| £ |
2 |
Nanoscale electric properties of ZnO/Si diodes by conductive atomic force microscopy |
International Center for Young Scientists-Interdisciplinary Materials Research 1
International Center for Materials Nanoarchitectonics 2, National Institute for Materials Science, Japan@* Mingsheng Xu 1, Daisuke Fujita 2 |
|
3 |
Electron trap level of Cu doped ZnO |
Touridai Univ. 1@Masayuki Taki 1,Hiroki Osuga 1,Akio Furukawa 1 |
|
4 |
Optical properties of electrochemically deposited ZnO |
The Univ. of Tokyo 1@*Ryuji Katayama 1, Yujiro Fukuhara 1, Masahiro Kakuda 1, Kentaro Onabe 1 |
|
5 |
Luminecent propoerties in ZnCoO alloys: correaltion between excitons and localized spin system |
The Univ. of Tokyo 1, Shizuoka Univ. 2, Osaka Univ. 3@Hiroaki Matsui 1, Zhiyan Xiao 2, Fuyuki Yamada 3, Hirokazu Katayama 3, Kensuke MiyaZIMA 3, Tdashi Itoh 3, Hitoshi Tabata 1 |
| |
|
Break 14:15`14:30 |
|
| ’ |
6 |
Fabrication of ZnCdO/ZnO multiple quantum structures on a-plane sapphire substrate by RPE-MOCVD |
Graduate School of Sci. and Tech., Shizuoka Univ. 1, Res. Inst. of Electronics, Shizuoka Univ. 2@*Yamamoto Kenji 1, Adachi Masahiko 2, Nakamura Atsushi 2, Temmyo Jiro 1,2 |
|
7 |
Influence of Ga doping to barrier layers on optical properties of ZnO quantum wells |
WPI-AIMR Tohoku Univ. 1, Univ. Hyogo 2, RIKEN CMRG 3, IMR Tohoku Univ. 4, ISSP Univ. Tokyo 5@T. Makino 1,Y. Furuta 2,Y. Segawa 3,A. Tsukazaki 4,A. Ohtomo 4,Y. Hirayama 5,S. Takeyama 5,Y. Takagi 2,M. Kawasaki 1,3,4 |
|
8 |
Photoexcitation induced screening of internal field effect in ZnO quantum wells |
WPI-AIMR Tohoku Univ.1, RIKEN 2 ,IMR Tohoku Univ. 3@T. Makino1,Y. Segawa2,A. Tsukazaki3,A. Ohtomo3,M. Kawasaki1,2,3 |
| ’ |
9 |
Molecular beam epitaxy and characterization of Zn-polar MgZnO/ZnO heterofunctions |
ROHM CO.,LTD. 1, IMR,Tohoku Univ. 2,IMRAM, Tohoku Univ. 3, WPI-AIMR, Tohoku Univ. 4, JST-CREST 5 @*Akasaka Shunsuke 1, Tsukazaki Atsushi 2, Yuji Hiroyuki 1, Tamura Kentaro 1, Nishimoto Yoshio 1, Takamizu Daiju 1, Sasaki Atsushi 1,Fujii Tetsuo 1, Nakahara Ken 1, Tanabe Tetsuhiro 1, Kamisawa Akira 1, Ohtomo Akira 2, Onuma Takeyoshi 3, Chichibu Shigehide 3, Kawasaki Masashi 2,4,5 |
|
10 |
Evaluation of m* and g*m* for two-dimensional electron gas in MgxZn1-xO/ZnO heterostructures |
IMR, Tohoku Univ. 1, ROHM Co. Ltd. 2, Princeton Univ. 3, JST-CREST 4, WPI-AIMR, Tohoku Univ. 5@*Tsukazaki Atsushi 1, Ohtomo Akira 1, Akasaka Shunsuke 2, Yuji Hiroyuki 2, Tamura Kentaro 2, Nakahara Ken 2, Tanabe Tetsuhiro 2, Kamisawa Akira 2, Javad Shavani 3, Tayfun Gokmen 3, Mansour Shayegan 3, Kawasaki Masashi 1,4,5 |
|
11 |
Precise control of two-dimensional transport at MgxZn1-xO / ZnO heterointerface by PEDOT:PSS Schottky gating |
IMR Tohoku Univ.1, WPI-AIMR Tohoku Univ.2, ROHM3, JST-CREST4
@*Nakano Masaki1, Tsukazaki Atsushi1, Ueno Kazunori2, Gunji Ryosuke1, Ohtomo Akira1, Fukumura Tomoteru1, Akasaka Shunsuke3, Nakahara Ken3, Kawasaki Masashi1,2,4
|
| |
|
Break 16:00`16:15 |
|
|
12 |
Effective mass of 2 dimensional electron gases in ZnO |
NIMS 1,AIST 2@*Imanaka Yasutaka 1,Takamasu Tadashi 1,Tampo Hitoshi 2,Shibata Hajime 2,Niki Shigeru 2 |
|
13 |
Magnetic properties of Zn1-xMnxO thin films grown on ZnO substrates |
Osaka Prefecture Univ.@Masuko Keiichiro, Ashida Atsushi, Yoshimura Takeshi, Fujimura Norifumi |
| ’ |
14 |
Influence of s-d exchange interaction on the magnetoresistance of Zn0.88Mn0.12O/ZnO heterostructure |
Osaka Prefecture Univ.@Masuko Keiichiro, Ashida Atsushi, Yoshimura Takeshi, Fujimura Norifumi |
|
15 |
PLD growth of ZnO thin films on glass substrates using ZnO/Zn1-XMgXO buffer layers |
Nanomaterials Microdevices Research Center, Osaka Institute of Technology@Kenji Fujiwara,Taichi Yoshida,Toshihiko Maemoto,Shigehiko Sasa,Masataka Inoue |
|
16 |
Characterization of ZnMgO thin films fabricated by sol-gel method |
Nanomaterials Microdevices Research Center, Osaka Inst. Tech.@*Tanaka Hiroyasu 1, Sasa Sigehiko 1, Maemoto Tosihiko 1, Inoue Masataka 1
|
|
17 |
Surface morphology and characteristics of MgXZn1-XO:In film. |
Shizuoka Univ RIE.1@*Tsuboi Takako 1,Yamamoto Kenji 1,Nakamura Atsushi 1,Temmyo Jiro 1 |
| Joint Session K: Zinc Oxide and Related Functional Materials |
| Sept. 4 9:00`17:15 |
| 4a-N-@/ I,II |
|
1 |
High performance ZnO ultraviolet Schottky photodetector with PEDOT:PSS transparent metal electrode |
IMR Tohoku Univ.1, WPI-AIMR Tohoku Univ.2, ROHM3, JST-CREST4
@*Nakano Masaki1, Makino Takayuki2, Gunji Ryosuke1, Ueno Kazunori2, Ohtomo Akira1, Fukumura Tomoteru1, Yuji Hiroyuki3, Akasaka Shunsuke3, Nakahara Ken3, Kawasaki Masashi1,2,4 |
|
2 |
Schottky contact on polar and unpolar face of ZnO-based film by H2O2 treatment |
RIE, Shizuoka Univ.@*Atsushi Nakamura 1, Takao Hayashi 1, Jiro Temmyo 1 |
| ’ |
3 |
Fabrication and characterization of Schottoky junctions between the O-polar surface of MgxZn1-xO and a conducting polymer |
IMR, Tohoku Univ.1, JST-CREST 2, WPI-AIMR Tohoku Univ. 3@*H. Onodera 1, Ryosuke.Y. Gunji 1, Atsushi Tsukazaki 1, Masaki Nakano 1, Takayuki Makino 3, Akira Ohtomo 1, Tomoteru Fukumura1, Masaki Kawasaki 1, 2, 3 |
|
4 |
Dependence of Pt/ZnMgO Schottky barrier height on Mg mole fraction (II) |
Tokyo Univ Sci.1@Tatsuya Kobayashi 1,Takuma Fujii 1, Akio Furukawa 1 |
|
5 |
UV light emission in ZnO homojunction diodes. |
Iwate Univ. 1, Iwate Industrial Research Institute 2, Center for Regional Collabo. Iwate Univ. 3, Sendai Nat. College of Tech. 4 @Nakagawa Akira 1, Abe Takami 1, Endo Haruyuki 2, Abe Tkashi 2, Nakagawa Michiko 3, Chiba Shigeki 1, Kashiwaba Yasuhiro 4, Ojima Tutomu 3, Aota Katumi 3, Niikura Ikuo 3, Kashiwaba Yasube 3, Fujiwara Tamiya 1
|
|
6 |
Homoepitaxial growth of N-doped non-polar ZnO films on a-face ZnO single crystal substrates |
Iwate Univ. 1, Iwate Industrial Research Inst. 2,
Center for Regional Collabo. Iwate Univ. 3, Sendai Nat. College Tech. 4@*Abe Takami 1, Nakagawa Akira 1, Nakagawa Michiko 3, Endo Haruyuki 2,
Meguro Kazuyuki 2, Kashiwaba Yasuhiro 4, Ojima Tsutomu 3, Aota Katsumi 3,
Niikura Ikuo 3, Kashiwaba Yasubee 3, Osada Hiroshi 1 |
| |
|
Break 10:30`10:45 |
|
|
7 |
HWPSE of ZnO on GaN templates and bulk ZnO substrates |
IMRAM-Tohoku Univ. 1@*Amaike Hiroaki 1, Sawai Yutaka 1, Hazu Koji 1, Onuma Takeyoshi 1, Koyama Takahiro 1, Chichibu F. Shigefusa 1 |
|
8 |
Growth of ZnO single-crystalline layer on 2 inch size substrate by UHV sputtering methode (I) |
Tokyo Denki Univ. 1,@*Takayuki Matsuyama 1,Tomomi Nagae 1,Hiroyuki Shinoda 1,Nobuki Mutsukura 1 |
|
9 |
Growth of ZnO single-crystaline layer on 2 inch size substrate by UHV sputtering method (II) |
Denki Univ. 1@*Nagae Tomomi 1, Matsuyama Takayuki 1, Shinoda Hiroyuki 1, Mutsukura Nobuki 1 |
|
10 |
CVT growth of ZnO on sapphire substrates with AlN buffer layers |
Nagoya inst. of Tech@*Masanori Oiwa 1,Yoshihiro Sakakibara 1,Koji Abe 1 |
|
11 |
Growth of ZnO single crystal thin films by Oxide-MOCVD |
Stanley Electric 1@*Tanaka Kazufumi 1,Makishima Masayuki 1,Horio Naochika 1,Kato Hiroyuki 1,Sano Michihiro 1 |
| |
|
Lunch 12:00`13:00 |
|
| 4p-N-@/ I,II |
| ’ |
1 |
Homoepitaxial growth of ZnO thin films by ultrasonic spray assisted mist chemical vapor deposition |
Kyoto Univ.@Nishinaka Hiroyuki, Fujita Shizuo |
|
2 |
Growth of ZnO Films on r-Plane Sapphire Substrate by Atmospheric-pressure CVD Using Zn and H2O as Source Materials |
Ehime Univ.@*Terasako Tomoaki 1, Saito Daisuke 1, Taira Keisuke 1, Nishinaka Atsushi 1, Miyata Akira 1, Shirakata Sho 1 |
|
3 |
Preparation of Polycrystalline ZnO/glass Thin Films by LP-MOCVD Apparatus with Substrate Rotation Mechanism |
Ehime Univ. 1@*Yura Shinichiro 1,Azuma Suguru 1,Miyata Akira 1,Terasako Tomoaki 1,Shirakata Sho 1 |
|
4 |
Crystal morphology control of ZnO films on polycrystalline Au prepared by electrochemical deposition method |
Graduate School of Engineering, Osaka Prefecture Univ. @*Ashida Atsushi 1, Fujita Akio 1, Sakiyama Haruka 1, Yoshimura Takeshi 1, Fujimura Norifumi 1, Nakahira Atsushi 1 |
|
5 |
Crystal morphology control of ZnO epitaxial thin films on Pt(111)/sapphire(0001) by electrochemical deposition method |
Graduate School of Engineering, Osaka Prefecture Univ. @*Sakiyama Haruka 1, Nouzu Naoya 1, Ashida Atsushi 1, Masuko Keiichiro 1, Yoshimura Takeshi 1, Fujimura Norifumi 1 |
| |
|
Break 14:15`14:30 |
|
|
6 |
Fabrication of ZnO/LSMO Double Layers by IBS and Crystalline Orientations |
Mie University 1, CUSAT(India) 2, Texas Christian Univ.(USA) 3@Daichi Ashida 1, Keisuke Morikawa 1, Tatsuya Yoshii 1, Daiki Higashiguchi 1, M.K.Jayaraj 2, Y.Strzhemechny 3, *Tamio Endo 1 |
|
7 |
Double Layer Growth of LBMO/ZnO and Crystallinities |
Mie University 1, Raman Res.Inst.(India) 2, Jadavpur Univ.(India) 3 @Keisuke Morikawa 1, Daichi Ashida 1, Hironao Iwanaga 1, R. Philip 2 , K. Chattopadhyay 3, *Tamio Endo 1 |
|
8 |
Characteristics of sub-gap absorption in amorphous In-Ga-Zn-O by Constant Photocurrent Measurement (2) |
Nihon Univ. 1, Tokyo Tech 2, JST ERATO-SORST 3,@*Kousaku Shimizu 1,3, Kenji Nomura 3, Masahiro Hirano 3, Toshio Kamiya 2,3, Hideo Hosono 2,3 |
|
9 |
Estimation of the defect-formation energy for a-InGaZnO based on the transfer characteristics of a-InGaZnO TFTs at different temperatures |
TRADIM 1, NEC LCD Technologies Ltd. 2, NEC Corp. 3@*Kazushige Takechi 1, Mitsuru Nakata 1, Toshimasa Eguchi 1, Hirotaka Yamaguchi 2, Setsuo Kaneko 2,3 |
|
10 |
Back-channel control in amorphous In-Ga-Zn-O TFTs |
Canon Inc. 1, ERATO-SORST 2, Tokyotech 3@*Takahashi Kenji 1, Kaji Nobuyuki 1, Hayashi Ryo 1, Kumomi Hideya 1, Nomura Kenji 2, Kamiya Toshio 2,3, Hirano Masahiro 2,3, Hosono Hideo 2,3 |
| |
|
Break 15:45`16:00 |
|
|
11 |
InGaZnO4 TFTs with Solution Processed Insulators |
Brother Ind.,Ltd. 1@*Noriko Miura 1,Ryoya Takahashi 1,Ryuta Iijima 1,Yuji Shinkai 1 |
|
12 |
Characterization of IZO-TFTs on an unheated glass substrate fabricated by RF magnetron sputtering |
Osaka Inst, 1@*Maitani Takeshi 1, Sasa Shigehiko 1, Maemoto Toshihiko 1, Inoue Masataka 1 |
|
13 |
Dry etching of ZnO films applied to fabrication of ZnO-TFT |
Kochi Univ.of Technol@*Hiramatsu Takahiro 1, Furuta Mamoru 1, Matsuda Tokiyoshi 1, Nitta Hiroshi, Hirao Takashi 1, |
|
14 |
Photo sensitivity of ZnO-TFT in visible light |
Dept.Electronic.Sci.and Eng.,Kyoto Univ. 1, Research Institute for Nanodevices, Kochi University of Technology 2@*Yudai Kamada 1, Shizuo Fujita 1, Hiroshi Nitta 2, Takahiro Hiramatsu 2, Mamoru Furuta 2, Takashi Hirao 2 |
| ’ |
15 |
Application of a ZnO/ZnMgO heterojunction field-effect transistor to immunosensors |
Osaka Inst. of Tech.@*Hashimoto Mitsuhiro 1,Takagi Daisuke 1,Hashimoto Takahito 1,Inoue Tomoyuki 1,Koike Kazuto 1,Ogata Ken-ichi 1,Sasa Shigehiko 1,Inoue Masataka 1,Yano Mitsuaki 1 |
| Joint Session K: Zinc Oxide and Related Functional Materials |
| Sept. 5 9:00`15:00 |
| 5a-N-@/ I,II |
|
1 |
Argon plasma irradiation effect of transparent conductive ZnO films |
NTT MI Labs.@Akazawa Housei 1 |
|
2 |
The evaluation of electrical and structural properties of transparent conducting zinc oxide films |
AIST 1@*Maejima Keigou 1, Shibata Hajime 1, Tampo Hitoshi 1, Yamaguchi Hirotaka 1, Niki Shigeru 1 |
|
3 |
Optical Dielectric Constants of Conductive ZnO Films Deposited on Glass |
Nanotechnology Research Inst., AIST@1, Research Center for Photovoltaics, AIST@2, Electronics Research Inst., AIST@3@*Ikegami Keiichi 1, Yoshiysma Takashi 2, Maejima Keigou 2, Shibata Hajime 3, Tampo Hitoshi 2, Niki Shigeru 2 |
|
4 |
The effect of imposed rf power on impurity-doped ZnO film preparation by inter-back-type dc magnetron sputtering |
Kanazawa Inst. of Tech.@*Nomoto Jyunichi 1, Konagai Manabu 1, Fukada Haruki 1, Miyata Toshihiro 1, Minami Tadatsugu 1 |
|
5 |
Transparent conducting AZO films prepared by DC magnetron sputtering with various sintered oxide targets (II) |
Kanazawa Inst. of Tech.@*Oda Jyunichi 1, Fukada Haruki 1, Miyata Toshihiro 1, Ishii Makoto 1, Minami Tadatsugu 1 |
|
6 |
Transparent conducting impurity-doped ZnO thin films prepared by inter-back-type rf super imposing dc magnetron sputtering |
Kanazawa Inst. of Tech.@*Konagai Manabu 1, Nomoto Jyunichi 1, Fukada Haruki 1, Miyata Toshihiro 1, Minami Tadatsugu 1 |
| |
|
Break 10:30`10:45 |
|
|
7 |
Dependence of growth temperature and ambient oxygen pressure on ZnO:Al films grown by PLD |
Keio Univ. 1@*Fukuoka Hiroki 1, Sakano Tatsunori 1, Obara Minoru 1 |
| ’ |
8 |
Transparent conducting zinc oxide films deposited on cycloolefin polymer substrate |
Osaka Sangyo Univ. 1,Okuda Technical Office 2@*Ueno Yuki 1,Michihata Ryota 1,Aoki Takanori 1,Suzuki Akio 1,Matsushita Tatsuhiko 1,Okuda Masahiro 2 |
| ’ |
9 |
Fabrication of multilayered transparent conducting films by PLD method using ArF excimer laser |
Osaka Sangyo Univ. 1,Okuda Technical Office 2@*Ikuta Kimihiro 1,Nakamura Masataka 1,Aoki Takanori 1,Suzuki Akio 1,Matsushita Tatsuhiko 1,Okuda Masahiro 2 |
|
10 |
Effect of Additives on Performance of ZnO Transparent Conductive Films Fabricated by Sol-gel Method |
Mie Pref. Industrial Research Inst.@*Masaki Murayama 1,Masashi Shoyama 1,Koji Inoue 1 |
| |
|
Lunch 11:45`13:00 |
|
| 5p-N-@/ I,II |
|
1 |
Evaluation of Visible Optical Spectra in Ga-Doped ZnO Films Deposited by Ion Plating using DC Arc Discharge |
Kochi Univ. of Tech. 1@*Yamada Takahiro 1,Miyake Aki 1,Makino Hisao 1, Yamamoto Naoki 1, Yamamoto Tetsuya 1 |
|
2 |
Thermal Stress in Ga-Doped ZnO Thin Films on Polymer Substrates by Reactive Plasma Deposition |
Research Inst., Kochi Univ. of Tech.,@Miyake Aki 1, Yamamoto Naoki 1, Yamada Takahiro 1, Makino Hisao 1, Yamamoto Testuya 1 |
|
3 |
Thermal Stability of Ga-Doped ZnO Thin Film Prepared by Reactive Plasma Deposition and Sputtering System (1) |
Research Inst. ,Kochi Univ. of Tech. 1, Geomatec 2, Casio Computer 3@Naoki Yamamoto 1, Hisao Makino 1, Takahiro Yamada 1, Aki Miyake 1, Yoshinori Hirashima 2, Hiroaki Iwaoka 2, Hitoshi Hokari 3, Hisashi Aoki 3, Tetsuya Yamamoto 1 |
|
4 |
Thermal Stability of Ga-Doped ZnO Thin Film Prepared by Reactive Plasma Deposition and Sputtering System (2) |
Research Inst., Kochi Univ. of Tech. 1, Geomatec 2, Casio Computer 3@*Hisao Makino 1, Naoki Yamamoto 1, Aki Miyake 1, Takahiro Yamada 1, Yoshinori Hirashima 2, Hiroaki Iwaoka 2, Hitoshi Hokari 3, Hisashi Aoki 3, Tetsuya Yamamoto 1 |
|
5 |
Relationship between substrate location and obtained property in GZO thin films prepared by VAPE (III) |
Kanazawa Inst. of Tech.@Ito Tomoyuki 1, Honma Yasunori 1, Fukada Haruki 1, Miyata Toshihiro 1, Minami Tadatsugu 1 |
| ’ |
6 |
Improving conducting of transparent GZO films by Laser annealing |
Osaka Sangyo Univ. 1,Okuda Technical Office. 2@*Nakamura keita 1,Murakami Shinichiro 1,Aoki Takanori 1,Suzuki Akio 1,Matsushita Tatsuhiko 1,Okuda Masahiro 2 |
|
7 |
Growth of Ga-doped ZnO by MOCVD using diisopropylzinc and tertiary-butanol |
JST innovationplaza Hiroshima 1,Shimane Univ. 2,3@Naoki Nishimoto1 ,Yuki Matsuo2 ,Itaru Takuwa2 ,O.Senthilkumar3 , K.Senthilkumar2 ,Yasuhisa Fujita2 |
| £ |
8 |
Behaviour of Indium implanted single crystal ZnO under different acceleration voltage |
Kochi Univ. of Technol 1@Aurangzib Rahman 1, Tadashi Narusawa1, Tokiyoshi Matsuda1 |