| Joint Session |
| Joint Session K: Zinc Oxide and Related Functional Materials |
| Sept. 15 9:00`18:15 |
| 15a-ZJ - 1`11 |
| ’ |
1 |
Proton-irradiation and post-annealing effects on single-crystalline
zinc oxide films grown by molecular beam epitaxy |
Osaka Inst. of Tech.1, Wakasa Wan Energy Res. Center2@iM2jTakeshi Amano1, Kazuto Koike1, Shigehiko Sasa1, Mitsuaki Yano1, Shun-ichi Gonda1, Ryoya Ishigami2, Kyo Kume2 |
| ’ |
2 |
Fabrication and characterization of ZnO-TFTs on transparent flexible PEN substrate |
Nanomaterials Microdevices Research Center, Osaka Inst. of Tech.1@Tatuya Tachibana1, Tomohiro Higaki1, Toshihiko Maemoto1, Shigehiko Sasa1, Masataka Inoue1 |
|
3 |
Formation of transparent electronic devices using zinc oxide |
Kyusyu Inst.Tech.1@Yasutaka Oba1, Akihiro Tomie1, Motoi Nakao1 |
| ’ |
4 |
Analysis of hump characteristics in ZnO thin film transistors |
Kyoto Univ.1, Ryukoku Univ.2, Kochi Univ. of Tech.3@Yudai Kamada1, Shizuo Fujita1, Mutsumi Kimura2, Takahiro Hiramatsu3, Mamoru Furuta3, Takashi Hirao3 |
|
5 |
Pt Schottky contacts on ZnO films and surface treatment of H2O2 |
RIE, Shizuoka Univ.1@Atsushi Nakamura1, Shunya Yamamori1, Jiro Temmyo1 |
|
6 |
Patterning of ZnO Transparent Electrodes by Wet-chemical Etching Techniques |
Kochi Univ. of Tech.1@Naoki Yamamoto1, Satoshi Osone1, Hisao Makino1, Takahiro Yamamda1, Tetsuya Yamamoto1 |
| |
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Break 10:30`10:45 |
|
|
7 |
Degradation of rectification properties for ZnMgO:Sb / ZnO:Ga hetero junction |
Akita Prefectural Univ.1@Takayuki Sakurai1, Takao Komiyama1, Yasunori Chonan1, Hiroyuki Yamaguchi1, Takashi Aoyama1 |
| ’ |
8 |
Characterization of pn junction films prepared by ZnO nanoparticles |
Shimane Univ.1@Hiroshi Okamoto, Shuhei Funaki, Yasuhisa Fujita |
|
9 |
Improvements in UV light emission of ZnO homojunction diodes |
Iwate Univ.1, Iwate Industrial Research Institute2, Sendai Nat. College of Tech.3@Akira Nakagawa1, Takami Abe1, Masashi Tanaka2, Haruyuki Endo2, Tetsuya Chiba2, Michiko Nakagawa2, Yasuhiro Kashiwaba3, Tsutomu Ojima1, Katsumi Aota1, Ikuo Niikura1, Yasube Kashiwaba1,2, Tamiya Fujiwara1 |
|
10 |
Growth of Zn1-xMgxO thin films by PARE method using ZnMg alloy |
Iwate Univ.1, Iwate Industrial Research Institute2, Sendai Nat. College of Tech.3@Takami Abe1, Akira Nakagawa1, Masashi Tanaka2, Haruyuki Endo2, Michiko Nakagawa2, Shigeki Chiba1, Yasuhiro Kashiwaba3, Hiroshi Osada1, Ikuo Niikura1, Yasube Kashiwaba1,2, Tamiya Fujiwara1 |
|
11 |
Formation of Ohmic Contacts of ΐ-Ga2O3 |
Ishinomaki Senshu Univ.1@Yoshihiro Kokubun, Yasuaki Oka, Shinji Nakagomi |
| |
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Lunch 12:00`13:00 |
|
| 15p-ZJ - 1`19 |
|
1 |
Structural and optical properties of Zn(Mg,Cd)O ternary alloys |
GSST, Shizuoka Univ.1, RIE, Shizuoka Univ.2, NTT BRL3@iPCjKenji Yamamoto1, Takako Tsuboi2, Toshiya Ohashi2, Takehiko Tawara3, Hideki Gotoh3, Atsushi Nakamura2, Jiro Temmyo1,2 |
|
2 |
Optical Properties of Si Doped ΐ-Ga2O3 Single-crystals |
Chitose Institute of Science and Technology1@Hirohumi Wakai1, Akio Yamanaka1 |
|
3 |
Effect of Cr doping on Optical@Properties of ΐ-Ga2O3:Time-Resolved Spectroscopy |
Chitose Institute of Science and Technology1@Dai Yasukawa1, Hirofumi Wakai1, Hisaya Oda1, Akio Yamanaka1 |
| ’ |
4 |
Time-resolved photoluminescence study of ZnO nanocrystals@embedded in a PMMA layer
|
Waseda University1, Hanyang University2@Souta Nakanishi1, Jae Hun Jung2, Dong Yeol Yun2, Tae Whan Kim2, Takao Nukui1, Kazutosi Sasayama1, Atsushi Tackeuchi1 |
| ’ |
5 |
Time-resolved photoluminescence measurements of ZnO nanocrystals embedded in PI +PVK or PI layers
|
Waseda Univ.1, Hanyang Univ.2@Kazutoshi Sasayama1, Jae Hun Jung2, Jin Ku Kwak2, Tae Whan Kim2, Young-Ho Kim2, Yu Saeki1, Soutaro Izumi1, Takao Nukui1, Tackeuchi Atsushi1 |
| ’ |
6 |
Novel Blue Photoluminescence and the Carrier Dynamics in TiO2 |
Kyoto Univ.1@Yasuhiro Yamada1, Yoshihiko Kanemitsu1 |
|
7 |
Analysis of optical characteristics of the metallic conductive oxide semiconductors based on the In-Sn-O system |
Univ. of Tokyo1, Kyoto Inst. of Technol.2@Wasanthamala Badalawa1 |
| |
|
Break 14:45`15:00 |
|
|
8 |
Green Luminescence Properties of Tb-doped SnO2 Thin Films |
Kumamoto Univ.1@Toshihiro Tanaka1, Yoshihiro Naka1, Yusui Nakamura1 |
|
9 |
Magnetic properties of ZnO:V films deposited by PLD with bias voltage application |
Akita Prefectural Univ.1@Kei Asano1, Shingo Doi1, Takao Komiyama1, Yasunori Chonan1, Hiroyuki Yamaguchi1, Takashi Aoyama1 |
|
10 |
Magnetic properties of C-doped ZnO fabricated by ion irradiation method |
Nagoya Inst. Technol.1, Hong Kong Poly. Univ.2@Yuhei Akaike1, Akari Hayashi1, Yasuhiko Hayashi1, Masaki Tanemura1, Lau S.P2 |
|
11 |
Photoluminescence Properties of Cu-Ga-O Films Grown by Atmospheric-pressure CVD Method |
Grad. School of Sci. & Eng., Ehime Univ.1, Fac. Eng., Ehime Univ.2@Tomoaki Terasako1, Seisuke Kuribayashi1, Yoshinori Ogura2, Toshihiro Takahashi2, Akira Miyata2, Sho Shirakata1 |
|
12 |
The dynamics of mist droplets at local reaction field in mist method |
Research Inst. for Nanodevices, Kochi Univ. of Tech.1@Toshiyuki Kawaharamura1, Takashi Hirao1 |
|
13 |
Thick film deposition of zink oxide on HOPG substrate by electrochemical method |
Wakayama Univ.1@Yasuhiro Tauchi1, Kazuyuki Uno1, Ichiro Tanaka1 |
|
14 |
Electrochemical deposition of ZnO on micro electrode II |
Osaka Pref. Univ.1@Yusuke Kondo1, Naoya Nouzu1, Atsushi Ashida1, Norifumi Fujimura1 |
| |
|
Break 16:45`17:00 |
|
|
15 |
Growth of ZnO layer by sputtering epitaxy (I) |
Tokyo Denki University1, Bruker AXS K.K.2@Keisuke Yoshida1, Yohei Tanaka1, Takashi Ochikubo1, Hiroyuki Shinoda1, Nobuki Mutsukura1, Hitoshi Morioka2, Keisuke Saito2 |
|
16 |
Growth of ZnO layer by sputter epitaxyiIIj |
Tokyo Denki Univ1, Bruker AXS K.K.2@Takashi Ochikubo1, Keisuke Yoshida1, Youhei Tanaka1, Hiroyuki Shinoda1, Nobuki Mutsukura1, Hitoshi Morioka2, Keisuke Saito2 |
|
17 |
Growth of ZnO layer by sputter epitaxy (III) |
Tokyo Denki Univ1, Bruker AXS K.K.2@Yohei Tanaka1, Takashi Ochikubo1, Keisuke Yoshida1, Hiroyuki Shinoda1, Nobuki Mutsukura1, Hitoshi Morioka2, Keisuke Saito2 |
|
18 |
Polarity inversion of Al-doped ZnO films grown on ZnO single crystals |
NIMS1@Yutaka Adachi1, Naoki Ohashi1, Isao Sakaguchi1, Shigenori Ueda1, Yoshiyuki Yamashita1, Hideki Yoshikawa1, Keisuke Kobayashi1, Hajime Haneda1 |
|
19 |
Characterization of ZnO polar surface by photoelectron diffraction |
NIMS1@Jesse WilliamsP, Naoki Ohashi1, Keisuke Kobayashi1, Igor Pis1, Masaaki Kobata1, Yutaka Adachi1 |
| Joint Session K: Zinc Oxide and Related Functional Materials |
| Sept. 16 9:00`18:45 |
| 16a-ZJ - 1`11 |
|
1 |
Fabrication of Al-Zn-Sn-O TFT by sputtering method |
P & I Lab. , Tokyo Tech.1@Kenichi Haga1, Eisuke Tokumitsu1 |
| £ |
2 |
Back-channel etching properties of amorphous IGZO thin film transistors using Cu-Mn alloy electrodes |
Tohoku Univ.1@iDjPilsang Yun1, Junichi Koike1 |
|
3 |
Carrier-Lifetime Measurement of IGZO film by Microwave Photo Conductivity Decay |
Kobe Steel, LTD1, Kobelco Research Institute,Inc2@Satoshi Yasuno1, Shinya Morita1, Toshihiro Kugimiya1, Futoshi Ojima2 |
|
4 |
Effects of low-temperature deposited SiNx gate insulator on the property of transparent amorphous oxide semiconductors |
Toppan Printing1@Chihiro Miyazaki1, Noriaki Ikeda1, Manabu Ito1 |
| ’ |
5 |
Instability of the a-IGZO TFT under the AC voltage stress. |
NAIST1, CREST2@iDjMami Fujii1, Masahiro Horita1, Yasuaki Ishikawa1, Yukiharu Uraoka1C2 |
| |
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Break 10:15`10:30 |
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|
6 |
Interface and bulk effects for bias stress instability in a-In-Ga-Zn-O TFTs |
FRC/Tokyo Tech1, MSL/Tokyo Tech2@Kenji Nomura1, Toshio Kamiya2, Hideo Hosono1,2 |
|
7 |
Photovoltaic properties of n-type a-In-Ga-Zn-O / p-type c-Si heterojunction solar cell |
Tokyo Tech.1, Frontier Research Center2, Univ. Yamanashi3@Kyeongmi Lee1, Kenji Nomura2, Hiroshi Yanagi3, Toshio Kamiya1, Hideo Hosono1,2 |
|
8 |
Vapor Liquid Solid growth of ZnO whisker on sapphire substrate by MBE method |
Waseda Univ.1@Hirokazu Hagiwara1, yoshiji Horikoshi1 |
|
9 |
Preparation of CdO Nanorods by Atmospheric-pressure CVD Using Cd powder and H2O as Source Materials(III) |
Grad.School of Sci.&Eng.,Ehime Univ.1, Kagawa Nat. College of Tech.2, Fac. Eng., Ehime Univ.3@Tetsuro Fujiwara1, Tomoaki Terasako1, Yukari Nakata2, Akira miyata3, Masakazu Yagi2, Sho Shirakata1 |
|
10 |
Piezoresistance of Al doped ZnO nanorods grown by hydrothermal synthesis |
Nagoya Inst. of Tech.1@Hiroki Takeuchi1, Hiroaki Ito1, Yuuki Kabeya1, Sanae Hiramatsu1, Shingo Ono1, Yo Ichikawa1 |
|
11 |
Surface Structure-dependent Electric Conduction Properties of ZnO Nano-wire:
First Principles Analysis
|
Cybernet Systems Co., Ltd.1@Noritaka Inoue1, Shinji Usui1 |
| |
|
Lunch 12:00`13:00 |
|
| 16p-ZJ - 1`21 |
|
1 |
Scaling relation between conductivity of ZnO and GZO films and film thickness |
NTT MI Labs.1@Housei Akazawa1 |
|
2 |
Relationship between the obtained properties and deposition methods in transparent conducting BZO films
|
O. E. Device System R&D Center, Kanazawa I.T.1@Junichi Nomoto1, Tomoyasu Hirano1, Toshihiro Miyata1, Tadatsugu Minami1 |
|
3 |
Affects of deposition techniques on surface morphology of transparent conducting impurity-doped ZnO thin films |
O. E. Device System R&D Center, Kanazawa I.T.1@Tomoyasu Hirano1, Junichi Nomoto1, Toshihiro Miyata1, Tadatsugu Minami1 |
|
4 |
GZO Transparent Conductive Films Prepared by DC Magnetron Sputtering with Roll to Roll System on PET Substrate |
Graduate School of Engineering, Tottori Univ.1, Oike & Co., Ltd.2, TEDREC3@Toshio Hinoki1,2, Hideaki Agura2, Kenji Yazawa2, Kentaro Kinoshita1,3, Koutoku Ohmi1,3, Satoru Kishida1,3 |
| ’ |
5 |
Characteristics of transparent conductive AlF3-doped AZO films deposited by PLD |
Osaka Sangyo University1@Yuya Maekawa1, Tomoaki Watanabe1, Yoshinobu Nakamura1, Takanori Aoki1, Tatsuhiko Matsushita1, Akio Suzuki1 |
| ’ |
6 |
Heat-resistant ATO/ZnO multilayered transparent conducting films deposited by PLD |
Osaka Sangyo University1@Tomoaki Watanabe1, Yuuya Maekawa1, Tosinobu Yasui1, Takanori Aoki1, Tatsuhiko Matsushita1, Akio Suzuki1 |
| ’ |
7 |
Fabrication of transparent conducting ZnO films for Dye-sensitized solar cells |
Osaka Sangyo Univ.1@Yoshinobu Nakamura1, Takanori Aoki1, Akio Suzuki1 |
| |
|
Break 14:45`15:00 |
|
|
8 |
Heat and moisture resistances of Ga-doped ZnO films deposited by reactive plasma deposition with various oxygen flow ratios |
Kochi Univ. Tech.1, Osaka Univ.2@Yasushi Sato1, Takahiro Yamada2, Hisao Makino1, Naoki Yamamoto1, Tetsuya Yamamoto1 |
|
9 |
Thickness dependence of micro-structure and electrical properties of
ZnO with Ga-highly-doping level |
Kochi Univ. Tech., Res. Inst.1, Osaka Univ.2@Tetsuya Yamamoto1, Takahiro Yamada2, Yasushi Sato1, Hisao Makino1, Naoki Yamamoto1 |
|
10 |
Effect of the substrate surface condition on electrical and optical properties of Ga-doped ZnO (GZO) films deposited on polymer substrates |
LINTEC@Cor.,@R&D@Div1, Kochi@Univ. Tech.2@Koichi Nagamoto1, Yumiko Matsubayashi1, Takeshi Kondo1, Yasushi Sato2, Hisao Makino2, Naoki Yamamoto2, Tetsuya Yamamoto2 |
|
11 |
The fabrication of Al3+ and Ga3+ ions doped ZnO transparent films by CEW-CVD tehchnique |
Nagaoka Univ. of Tech.1@Hiroshi Nishiyama1, Kazunari Tamura2, Hitoshi Miura1, Yasunobu Inoue2 |
| ’ |
12 |
Relationship between carrier density and work function for ITO and IZO thin films |
Aoyama Gakuin Univ.1, Idemitsu Kosan Co.,Ltd.2@Aiko Takasaki1, Nobuto Oka1, Futoshi Utsuno2, Koki Yano2, Yuzo Shigesato1 |
|
13 |
XPS Study on Electronic States of Thin-films |
Toray Reserch Center1, Aogaku Univ.2@Asami Yasui1, Shingo Ogawa1, Takashi Yamamoto1, Masaaki Takeda1, Ryo Endoh1, Nobuto Oka2, Yuzo Shigesato2 |
|
14 |
Epitaxial growth of Indium Tin Oxide Films Using Solid-Source ECR Plasma Deposition |
MES-AFTY Corp.1@Hironori Torii1, Takao Amazawa1, Masaru Shimada1, Seitorou Matsuo1 |
| |
|
Break 16:45`17:00 |
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|
15 |
Resistivity Reduction of Indium Saving ITO Sputtered Thin Films |
IMRAM, Tohoku Univ.1, NICHe, Tohoku Univ.2@Makoto Ohtsuka1, Svitlana Petrovska2, Leandro Voisin2, Takashi Nakamura1 |
| ’ |
16 |
High rate deposition of SnO2-based transparent conductive films by reactive sputtering |
Aoyama Gakuin Univ.1, Bridgestone Co.2@Yu Muto1, Satoshi Nakatomi1, Naoki Tsukamoto1, Nobuto Oka1, Yoshinori Iwabuchi2, Hidefumi Kotsubo2, Yuzo Shigesato1 |
|
17 |
Fabrication of W:SnO2 Transparent Conductive Thin Films Using Seed-layer method |
KAST1, Univ. of Tokyo2, Chubu Univ.3, Tohoku Univ.4@Shoichiro Nakao1,2, Naoomi Yamada3, Taro Hitosugi1,4, Yasushi Hirose1,2, Tetsuya Hasegawa1,2 |
| ’ |
18 |
Thermal diffusivity measurement of TiO2 and Nb-doped TiO2 using light pulse heating thermoreflectance method |
Aoyama Gakuin Univ.1, AIST2, AGC Ceramics Co., Ltd.3@Chihiro Tasaki1, Nobuto Oka1, Takashi Yagi2, Naoyuki Taketoshi2, Tetsuya Baba2, Toshihisa Kamiyama3, Yuzo Shigesato1 |
| ’ |
19 |
Evaluation of dopant effect in TiO2-xFx transparent conductor |
Univ. of Tokyo1, KAST2, Chubu Univ.3, Hokkaido Univ.4@Satoru Mohri1,2, Yasushi Hirose1,2, Shoichiro Nakao1,2, Naoomi Yamada3, Toshihiro Shimada4, Tetsuya Hasegawa1,2 |
|
20 |
Crystallization Process of Amorphous Nb-doped TiO2 |
Uni. of Tokyo1, KAST2@NgocLamHuong Hoang1,2, Yasushi Hirose1,2, shouichiro Nakao1,2, Kenji Taira1,2, Tetsuya Hasegawa1,2 |
| ’ |
21 |
Microscopic observation of NbxTi1-xO2 crystals growing on inorganic nanosheets |
Univ. Tokyo1, KAST2, CREST3, NIMS4@iM2jKenji Taira1,2,3, Ysushi Hirose1,2,3, Shouitirou Nakao1,2, Toshihiro Kogure1, Tatsuo Shibata3,4, Takayoshi Sasaki3,4, Tetsuya Hasegawa1,2,3 |
| Joint Session K: Zinc Oxide and Related Functional Materials |
| Sept. 17 9:00`15:00 |
| 17a-ZJ - 1`11 |
|
1 |
Crystalline structures of ZnO epitaxial films grown using catalytically generated hot water |
Nagaoka Univ. of Technol.1@Masami Tahara1, Hitoshi Miura1, Tomoyoshi Kuroda1, Hiroshi Nishiyama1, Kanji Yasui1 |
|
2 |
Optical properties of ZnO epitaxial films grown using catalytically generated hot water |
Nagaoka Univ. of Technol.1@Hitoshi Miura1, Kazuki Nagata1, Tomoyoshi Kuroda1, Hiroshi Nishiyama1, Kanji Yasui1 |
|
3 |
Electrical properties of ZnO epitaxial films grown using catalyticaly generated hot water |
Nagaoka Univ. of Technol.1@Hitoshi Miura1, Masami Tahara1, Tomoyoshi Kuroda1, Hiroshi Nishiyama1, Kanji Yasui1 |
|
4 |
Heteroepitaxial growth of ZnO on sapphire substrates |
Nagoya Institute of Tech.1@Yosihiro Sakakibara1, koji abe1 |
| ’ |
5 |
Epitaxial Electrodeposition of ZnO Thin Films on GaN Bulk Single Crystals |
Gifu Univ.1@Keigo Ichinose1, Tsukasa Yoshida1 |
|
6 |
Two-step growth of ZnO on c-plane sapphire substrate by halide vapor phase epitaxy |
Tokyo Univ. of Agri. & Tech.1@Toshikatsu Shinozuka1, Rui Masuda1, Rie Togashi1, Hisashi Murakami1, Yoshinao Kumagai1, Akinori Koukitu1 |
| |
|
Break 10:30`10:45 |
|
|
7 |
Photoluminescence Properties of Undoped and Ga-doped ZnO Films Grown by Atmospheric-pressure CVD Methods |
Grad. School of Sci. & Eng., Ehime Univ.1, Kagawa Nat. College of Tech.2@Tomoaki Terasako1, Kouta Taniguchi2, Keisuke Taira1, Masakazu Yagi2, Sho Shirakata1 |
|
8 |
Growth Time Dependence of ZnO Films Grown by MOCVD Using Diethylzinc and Water as Precursors |
Grad. School of Sci. & Eng., Ehime Univ.1, Kagawa Nat. College of Tech.2, Fac. Eng., Ehime Univ.3@Takahiro Yamanaka1, Masashi Tsukamura1, Yukari Nakata2, Tomoaki Terasako1, Akira Miyata3, Masakazu Yagi2, Sho Shirakata1 |
|
9 |
Growth of ZnO films using DEZ materials by spray method |
Univ.Miyazaki1, Tosoh Finechem2@Yujin Takemoto1, Minoru Oshima1, Kenji Yoshino1, Kohji Toyoda2, Koichiro Inaba2, Ken-ichi Haga2, Kohichi Tokudome2 |
|
10 |
Influence of sol-gel preparing time on zinc oxide film quality |
Akita Prefectural University1@Satoshi Ishii1, Kazunori Abe1, Takao Komiyama1, Yasunori Chonan1, Hiroyuki Yamaguchi1, Takashi Aoyama1 |
|
11 |
Molecular Dynamics Study of ZnO film formation |
FUJITSU LABORATORIES LTD.1@Norihiko Takahashi1, Mari Ohfuchi1, Takahiro Yamasaki1, Chioko Kaneta1 |
| |
|
Lunch 12:00`13:00 |
|
| 17p-ZJ - 1`8 |
|
1 |
High Mobility ZnO/MgZnO Heterointerfaces Fabricated by Molecular Beam Epitaxy Using Ozone |
IMR, Tohoku Univ.1, Rohm2, Univ. Tokyo3, JST-PRESTO4, JST-CREST5, WPI-AIMR6@Yusuke Kozuka1, Joseph Falson1, Shunsuke Akasaka2, Ken Nakahara2, Atsushi Tsukazaki3,4, Masashi Kawasaki1,5,6 |
|
2 |
Fabrication of zinc oxide films via nitrogen-atom mediated crystallization |
Kyushu Univ1, Kyushu Univ2@Naho Itagaki1, Kazunari Kuwahara1, Kenta Nakahara1, Daisuke Yamashita1, Kunihiro Kamataki2, Giichiro Uchida1, Kazunori Koga1, Masaharu Shiratani1 |
|
3 |
Vacuum annealing efffects on the unintentionally doped ZnO films deposited by RF magnetron sputtering method
|
Waseda Univ.1@Masaaki Yoshikawa1, Thanawat Bunprasert, Toshio Takeuchi, Yoshiji Horikoshi |
|
4 |
Properties of the Cu-doped ZnO films deposited by
RF magnetron sputtering method
|
Waseda University1@Thanawat Bunprasert1, Masaaki Yoshikawa1, Toshio Takeuchi1, Yoshiji Horikoshi1 |
|
5 |
Deposition of Zinc Oxide thin film by DC magnetron sputtering. |
Tosoh Corp. Tokyo Res. Lab.1@Kentaro Utsumi1, Kenzi Omi1, Hitoshi Iigusa1, Hideto Kuramochi1, Teshuo Shibutami1 |
| £ |
6 |
The thickness of ZnO thin film with post treatment in reduction condition effects on structural and optical properties |
Kochi Univ. of Tech.1@Dapeng Wang1, Chaoyang Li1, Toshiyuki Kawaharamura1, Tokiyoshi Matsuda1, Mamoru Furuta1, Takashi Hirao1, Tadashi Narusawa1 |
|
7 |
Improvements of Under-ZnO Crystallinities during Fabrication of LSMO/ZnO Double Layers |
Mie Univ.1, Tateho Chemistry2, Kanazawa Institute of Technology3, Kawamura Sangyo Co., LTD.4@Tamio Endo1, Tatsuya Yoshii1, Kenichi Uehara1, Kazuhisa Niwano2, Kazuhiro Endo3, Takuro Hayashi4 |
|
8 |
Orientations of Double Layer La(Sr)MnO3/ZnO Thin Films, and One Approach for Lattice Matching Calculations |
Mie Univ.1, Toshima mfg. Co.,Ltd2, National Inst. of AIST3, Kawamura Sangyo Co.,Ltd4@Kenichi Uehara1, Tatsuya Yoshii1, Hidefumi Motobayashi2, Tetsuo Tsuchiya3, Miyoshi Yokura1,4, Tamio Endo1 |