Joint Session |
| Joint Session F: Physics and Applications of Carbon Nanotubes |
| March 30 10:00`18:15 |
| 30a-TA-@/ I,II,III |
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1 |
Distributing and atomization of single-wall Carbon nanotubes |
Waseda Univ. 1,@*Kato Shinichiro 1, Ishii Ryouta 1, Hamaguchi Sayoko 1, Kobayashi Masakazu 1, Utaka katsuyuki 1 , |
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2 |
Simple Separation of Metallic and Semiconducting Carbon Nanotubes by Using Agarose Gel |
AIST, NRI 1, JST, CREST 2 @*Takeshi Tanaka1, Hehua Jin1, Yasumitsu Miyata1, Shunjiro Fujii1, Hiroshi Suga1, Yasuhisa Naitoh1, Takeo Minari1, Tetsuhiko Miyadera1, Kazuhito Tsukagoshi1, Hiromichi Kataura1,2 |
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3 |
Functionalization of Single-walled Carbon Nanotubes by Vacuum Ultraviolet Light Irradiation |
Shinshu Univ. 1@*Lee SunHyung 1, Teshima Katsuya 1, Jung YongChae 1, Kim YoongAhm 1, Endo Morinobu 1, Oishi Shuji 1 |
| ’ |
4 |
Embedding of Single–Wall Carbon Nanotubes into Alumina Nanoholes by Electrophoresis |
Univ. of Yamanashi 1, Natl. Inst. Adv. Set. Technol. 2@*Yuichi Kurashima 1, Shouta Shimada 1, Takeshi Tanaka 2, Shinsaku Hagiwara 1,
Hiromichi Kataura 2,Youichi Sakakibara 2
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5 |
Unspecific biosensing using double-walled carbon nanotube field effect transistor |
RIKEN 1, Tokyo Univ. of Sci. 2@Omura Kazuo 1,2, *Mori Takahiro 1, Uchida Katsumi 2, Yajima Shota 1,2, Ishibashi Kouji 1, Yajima Hirohumi 2 |
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Break 11:15`11:30 |
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6 |
Development of Bio-Nano Sensor Using CNT Compound MaterialsC
-Examination of density dependency- |
Musashi Inst 1,@*Yuichiro Funada 1,Amiya Shoji 1,Hirata Takamichi 1,Akiya masahiro 1, |
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7 |
Electro Chemical Analysis of CNT Random Network Formed on the Taste Sensor Chip |
Musashi Inst 1,@*Takeda Naoki 1,Takagi Keisuke 1,Hirata Takamichi 1,Akiya Masahiro 1 |
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8 |
Water solubilization of CNTs by ozone treatment using dielectric barrier discharge (I) Fundamental characteristics |
Kyushu Univ. 1@*Imasaka Kiminobu 1, Usama Khaled 1, Sun Wei 1, Tomita Hironari 1, Suehiro Junya 1 |
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9 |
Water solubilization of CNTs by ozone treatment using dielectric barrier discharge (II) Surface analysis of CNT |
Kyushu Univ. 1@*Imasaka Kiminobu 1, Usama Khaled 1, Sun Wei 1, Tomita Hironari 1, Suehiro Junya 1 |
|
10 |
Ab Initio Study of Sodium Dodecyl Sulfate (SDS) on Metallic and Semiconducting Single-Wall Carbon Nanotubes |
Fujitsu Labs.@*Mari Ohfuchi |
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Lunch 12:45`13:45 |
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| 30p-TA-@/ I,II,III |
| ’ |
1 |
Synthesis of Carbon Nanowalls by Ion and Radical Independent Control (III) |
Nagoya Univ. 1, Katagiri Engineering 2, Meijo Univ. 3@*Kondo Shingo 1, Itani Yoshihiro 1, Yamakawa Koji 2, Den Shoji 2, Hiramatsu Mineo 3, Sekine Makoto 1, Hori Masaru 1 |
| ’ |
2 |
Effect of fluorine impurities on structures and electronic state in carbon nanowalls |
Nagoya Univ. 1, JASRI/SPring-8 2, Meijo Univ. 3, NU Eco-Engineering 4, Aichi Inst. of Tech. 5@*Takeuchi Wakana 1, Kashihara Masayoshi 1,Mikuni Hiroyuki 1,Ikemoto Yuka 2, Moriwaki Taro 2,Kato Yukako 2, Muro Takayuki 2,
Kinoshita Toyohiko 2, Kimura Shigeru 2, Hiramatsu Mineo 3 |
| ’ |
3 |
Electrical properties of carbon nanowalls(I) |
Nagoya Univ. 1, Aichi Inst. of Tech 2, Meijo Univ. 3, NU Eco-Engineering 4@*Shimoeda Hironao 1, Takeuchi Wakana 1, Tokuda Yutaka 2, Hiramatsu Mineo 3, Kano Hiroyuki 4, Sekine Makoto 1, Hori Masaru 1 |
| ’ |
4 |
Supporting platinum nano-particles on carbon nanowalls by using supercritical carbon dioxide and metal organic (II) |
Nagoya Univ. 1, NU-ECO ENGINEERING 2, Meijo Univ. 3@*Mase Kota 1, Machino Takuma 1, Kano Hiroyuki 2, Hiramatsu Mineo 3, Sekine Makoto 1, Hori Masaru 1 |
| ’ |
5 |
Fabrication control of Bridge-shaped Carbon Nanowall |
Nagoya Univ. 1, Meijo Univ. 2, NU-Eco Engineering Co., Ltd. 3, Aichi Inst. of Tech. 4@*Hiroyuki Mikuni 1,Wakana Takeuchi 1,Keigo Takeda 1,Mineo Hiramatsu 2, Hiroyuki Kano 3, Yutaka Tokuda 4, Masaru Hori 1 |
| ’ |
6 |
Electrochemical evaluation of carbon nanowall electrode |
Meijo Uni. 1,Nagoya Uni. 2@*Watanabe Hitoshi 1,Hiramatsu Mineo 1,Hori Masaru 2 |
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7 |
Growth of Carbon Nanowalls on Crystalline Silicon Substrates with Different Surface Roughness |
Gifu Univ.@K. Tada, Y. Nakanishi, M. Hisanaga, S. Ito, T. Itoh, S. Nonomura |
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8 |
Structural characterization and growth mechanism of Carbon nanowalls |
Yokohama City Univ. 1@*Hirofumi Yoshimura 1, Norihiro Kitada 1, Shigeki Yamada 1, Kenichi Kojima 1, Masaru Tachibana 1 |
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Break 15:45`16:00 |
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9 |
Application of CNT-Washi Paper to Authentication Systems |
Yokohama Nat. Univ.@*Watanabe Keisuke 1, Oya Takahide 1 |
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10 |
Theoretical Analysis of the "Blackness" of a Vertically-aligned-CNT-Array by means of Radiative Heat Transfer |
AISTKansai 1@Ishido Yoshinari 1 |
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11 |
Scattering Process of Transmitted Gas Molecules through Vertically Aligned Single-Walled Carbon Nanotube Arrays |
The Univ. of Tokyo 1@*Kawasaki Jumpei 1, Harada Yuushi 1, Kinefuchi Ikuya 1, Ishikawa Kei 1, Shiomi Junichiro 1, Takagi Shu 1, Maruyama Shigeo 1, Matsumoto Yoichiro 1 |
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12 |
First-principle calculations of the electronic states of peanut-shaped C120 isomers derived from the general Stone-Wales rearrangements |
Tokyo Tech. 1, J-Power 2@KAkito Takashima 1, Toshiaki Nishii 2, Jun Onoe 1 |
| ’ |
13 |
Transportation Mechanism of Carbon Nanotube Capsule |
Osaka Univ. 1@*Senga Ryosuke 1, Somada Hiroshi 1, Hirahara Kaori 1, Nakayama Yoshikazu 1 |
| ’ |
14 |
Surface structural change of single walled carbon nanotube and carbon fiber with liquid Ga catalyst |
PRESTO JST 1, Univ. of Tsukuba 2, Sumitomo Electric Industries 3@R.Endo 1,2, R.Ueki 1,2, T.Hikata 3, J.Fujita 1,2 |
| ’ |
15 |
The Mechanism of Defect Generation and Electrical Characteristics in Carbon Nanotube due to Neutral Beam irradiation |
IFS, Tohoku Univ. 1, Graduate School of Environmental Studies, Tohoku Univ. 2, NTT Corp. 3, NEC Corp. 4@*Wada Akira 1, Sato Yoshinori 2, Suzuki Satoru 3, Ishida Masahiko 4, Nihey Fumiyuki 4, Kobayashi Yoshihiro 3, Tohji Kazuyuki 2, Samukawa Seiji 1 |
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16 |
A Molecular Dynamics Simulation of Electron-Beam Fabrication of Carbon NanoMaterials (II) |
Osaka Pref. Univ. 1@*Mimura Ryosuke 1, Yasuda Masaaki 1, Kawata Hiroaki 1, Hirai Yoshihiko 1 |
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17 |
Development of the microreactors made of carbon nanotube films |
Kobe Univ.@Yamakawa Akira, *Kinoshita Hiroshi, Ohmae Nobuo |
| Joint Session F: Physics and Applications of Carbon Nanotubes |
| March 31 9:30`17:00 |
| 31a-TA-@/ I,II,III |
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1 |
Characterization of molecular adsorption on single-walled carbon nanotubes by photoluminescence |
Tokyo Univ. of Science 1@*Chiashi Shohei 1, Hanashima Tateki 1, Mitobe Ryota 1, Homma Yoshikazu 1 |
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2 |
Photoluminescence spectra from single-walled carbon nanotubes encapsulating water molecules |
Tokyo Univ. of Science@Tateki Hanashima 1, Ryota Mitobe 1, Shohei Chiashi 1, Yoshikazu Homma 1 |
| ’ |
3 |
Exciton Radiative Lifetimes and Their Temperature Dependence of Single-Walled Carbon Nanotubes |
Inst. for Chemical Research, Kyoto Univ. 1, Inst. for Integrated Cell-Material Sciences, Kyoto Univ. 2@*Yuhei Miyauchi 1, Ryusuke Matsunaga 1, Hideki Hirori 2, Kazunari Matsuda 1, Yoshihiko Kanemitsu 1 |
| ’ |
4 |
Observation of Dark Excitons in Single Carbon Nanotubes due to the Aharonov-Bohm Effect |
Institute for Chemical Research, Kyoto University@Ryusuke Matsunaga, Kazunari Matsuda, and Yoshihiko Kanemitsu |
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5 |
Photo-Response of Carbon Nanotube FETs with Piezoelectric Gate |
Osaka Pref. Univ. 1, CREST-JST 2 @Ikeyama Toshio 1, Nei Naoki 1, Arie Takayuki 1,2, Akita Seiji 1,2 |
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6 |
Fast bandgap tuning of an individual carbon nanotube with uniaxial strain |
Keio Univ. 1@*Hideyuki Maki 1, Tetsuya Sato 1 |
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Break 11:00`11:15 |
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| ’ |
7 |
Temperature Dependence of Cantilevered Carbon Nanotube Oscillation |
Osaka Pref. Univ.@Fukami Shun 1,Arie Takayuki 1,Akita Seiji 1 |
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8 |
Vibration sensing of cantilever carbon nanotube in water |
Osaka Pref.Univ. 1,CREST-JST 2@*Sawano Shunichi 1,Arie Takayuki 1,2,Akita Seiji 1,2 |
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9 |
Influence of Squashing on Transport Characteristics through Carbon Nanotube |
Kobe Univ. 1@*Mouri Masaaki 1,Ogawa Matsuto 1,Souma Satofumi 1 |
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10 |
Molecular Dynamics Simulations for Nanotube Vibration in Water |
Osaka Pref. Univ. 1, CREST-JST 2@Yoshinori Ueno 1, Takayuki Arie 1,2, Seiji Akita 1,2 |
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11 |
Fabrication of the standard materials for AFM tip characterizer by using CNTs |
Tokyo Univ. of Science 1, AIST 2@Yuji Takagi 1, Yayoi Watabe 1, Shohei Chiashi 1, Hiroshi Ito 2, Yoshikazu Homma 1 |
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12 |
Strain Dependence of Electronic band Structure of Multi-Walled Carbon Nanotubes and its application to Strain Sensors |
Tohoku graduate school. 1, Tohoku Univ. 2@Oosaki Katsuya 1, Oonisi Masato 2, Suzuki Ken 2, Miura Hideo 2 |
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Lunch 12:45`14:00 |
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| 31p-TA-@/ I,II,III |
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1 |
Formation mechanisms of graphene on vicinal SiC(0001) surface |
Kyushu University@1, 2, NTT Basic Research Labs.@3@*K. Morita 1, K. Hayashi 2, S. Mizuno 2, H. Hibino 3 , S. Tanaka 1 |
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2 |
Domain structures in graphene layers on vicinal SiC surfaces |
Kyushu Univ. 1, 2, NTT Basic Res. Labs. 3, Tokyo Univ. 4@*Satoru Tanaka 1, Kouhei Morita 1, Kenjiro Hayashi 2, Seigi Mizuno 2, Hiroki Hibino 3, Kan Nakatsuji 4, Fumio Komori 4 |
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3 |
In-situ graphene formation on vicinal SiC surfaces at relatively low vacuum environmental |
Kyushu Univ 1@*Yoshihito Hagihara 1. Kouhei Morita 1. Srey chenda 1. Satoru Tanaka 1 |
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4 |
Dependence of multilayered graphene from SiC by pyrolysis in vacuum of SiC crystallinity and temperature |
RIE Shizuoka Univ 1@*Ogawa Yasuhiro 1, Shibata Nao 1, Nakamura Atushi 1, Tanaka Akira 1, Temmyo Jiro 1 |
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5 |
Formation of Graphene Nanostructures on vicinal SiC surfaces |
Kyushu Univ. 1@Srey Chenda 1, Kohei Morita 1, Hitoyoshi Hagihara 1, Satoru Tanaka 1 |
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6 |
Transmission electron microscopy of the interface structure between graphene and SiC |
Nagoya Univ., Japan Fine Ceramics Center@*Wataru Norimatsu, Michiko Kusunoki |
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Break 15:30`15:45 |
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7 |
Resonant-Raman Spectroscopy of Graphene Grown on Si Substrate |
RIEC Tohoku Univ. 1, JST-CREST 2, Center for Interdisciplinary Researc Tohoku Univ. 3@*Miyamoto Yu 1, Handa Hiroyuki 1, Fukidome Hirokazu 1, Itoh Takashi 3, Suemitsu Maki 1 2 |
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8 |
Selective synthesis of multi-walled carbon nanotubes and graphene multi-layers by controlling catalyst thickness |
Nanotechnology Research Center, Fujitsu Laboratories Ltd. 1, Fujitsu Ltd. 2, CREST-JST 3@* Kondo Daiyu 1,2,3, Sato Shintaro 1,2,3, Soga Ikuo 1, Nihei Mizuhisa 1,2,3, Awano Yuji 1 |
| ’ |
9 |
Fabrication of multi-layer graphene with liquid Ga catalyst |
PRESTO JST 1, Univ. of Tsukuba Inst. of Appl. Phys. 2, NEC 3, Sumitomo Electric Industries 4@*Y. Miyazawa 2, R. Ueki 1,2, T. Ichihashi 3, T. Hikata 4, J. Fujita 1,2 |
| ’ |
10 |
Multi-layer Graphene Growth by Photoemission-Assisted Plasma CVD (I): Effect of Gas (Ar, He) |
Tohoku Univ. 1, CRESTEJST 2, JASRI 3, Fujitsu Ltd. 4@*Sumi Haruki 1, Ogawa Shuichi 1,2, Saikubo Akihiko 2,3, Ikenaga Eiji 2,3, Nihei Mizuhisa 2,4, Takakuwa Yuji 1,2 |
| ’ |
11 |
Operation of multi-layer graphene sheets using nano-manipulator and identification of cleaved edgefs direction. |
PRESTO-JST. 1, Univ. of Tsukuba Institute of Applied Physics. 2@*Ueki Ryuichi 1,2, Miyazawa Yousuke 2, Fujita Jun-ichi 1,2 |
| Joint Session F: Physics and Applications of Carbon Nanotubes |
| April 1 10:15`18:30 |
| 1a-TA-@/ I,II,III |
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1 |
Isolation of graphene monolayer through chemical process and its FET characteristics |
Univ. of Tokyo 1.2, Saitama Univ. 3@*Sato Hiroki 1, Obata Seiji 2, Shiraishi Junko 1,Ueno Keiji 3,Saiki Koichiro 1.2 |
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2 |
Reduction of graphene oxide and structural analysis |
Univ. of Tokyo 1.2@*Obata Seiji 1, Shiraishi Junko 2, Saiki koichiro 1.2 |
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3 |
High Resolution Electron Energy Loss Spectra of Graphene Oxide |
The Univ. of Tokyo 1,2, Saitama Univ. 3@Junko Shiraishi 1, Seiji Obata 2, Keiji Ueno 3, Koichiro Saiki 1,2 |
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4 |
Insulating Properties of Graphene Oxide Nano Sheets |
Grad. Sch. Sci. Univ. Tokyo 1, Grad. Sch. Frontier Sch. Univ. Tokyo 2@*Yoshio Kanamori 1, Seiji Obata 1, Junko Shiraishi 2, Koichiro Saiki 1,2 |
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5 |
Effects of reducing conditions on conductivity change of graphene oxide |
The Univ. of Tokyo 1@*Hiroyuki Asano 1, Yukihiro Shimogaki 1 |
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Break 11:30`11:45 |
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6 |
Electrical properties of graphene oxide reduced by UV irradiation |
Univ. of Tokyo 1,2@*Kozo Hattori 1, Seiji Obata 2, Junko Shiraishi 1, Koichiro Saiki 1,2 |
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7 |
Fabrication of transparent conductive thin films and field-effect transistor electrodes using graphene. |
Saitama Univ. 1,The Univ. of Tokyo 2@*Yoshida Masashi 1,Suganuma Koichi 1,Saiki Koichiro 2,Ueno Keiji 1 |
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8 |
Coulomb oscillations in graphene quantum dots |
ISIR,Osaka Univ. 1@Yamashiro Yusuke 1, Ohno Yasuhide 1, Maehashi Kenzo 1, Inoue Koichi 1, Matsumoto Kazuhiko 1 |
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9 |
Spin-dependent Transport Simulation in Nano-Graphene Devices |
Kobe Univ. 1, Univ. of Tokyo 2, Tokyo Univ. of Science 3@*Satofumi Souma 1, Matsuto Ogawa 1, Takahiro Yamamoto 2, Kazuyuki Watanabe 3 |
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10 |
Cutting of a graphene sheet on solid surfaces using Fe particles |
Yokohama National Univ. 1@Tsukamoto Takahiro 1,Ono Yuki 1,Sekino Ryou 1,*Ogino Toshio 1 |
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Lunch 13:00`14:00 |
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| 1p-TA-@/ I,II,III |
| ’ |
1 |
Channel length dependence of quantum multi-functional transistor characteristics |
AIST1, JSPS2, CREST/JST3, ISIR Osaka Univ.4.@Takafumi Kamimura1,2,3, Kazuhiko Matsumoto1,3,4 |
| £ |
2 |
Formation of the high charging energy SWCNT-SET using Arr ion beam partial exposure method |
RIKEN 1, Tokyo Metropolitan Univ 2@*Takahiro Mori 1, Tsuruoka Yasuhiro 2, Achiba Yoji 2, Ishibashi Koji 1 |
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3 |
Fabrication of single electron transistors using transfer printed aligned carbon nanotubes on SiO2/Si substrate |
Riken 1@Tabata Hiroshi 1, Ishibashi Koji 1 |
| ’ |
4 |
Phonon Scattering Effects on Quantum Transport of Carbon Nanotubes: From Diffusive to Ballistic Regimes |
AIST 1, Univ. of Tsukuba 2, NEC 3@*Ishii Hiroyuki 1, Kobayashi Nobuhiko 2, Hirose Kenji 3 |
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5 |
Position control and electrical characterization of individual SWNTs separated by density gradient centrifugation |
Electronic Sci. & Eng.,Kyoto Univ. 1, ICC,Kyoto Univ. 2@*Katsuhiro Kaneko 1, Yuji Miyato 1, Kei Kobayashi 2, Kazumi Matsushige 1, Hirofumi Yamada 1 |
| ’ |
6 |
Investigation of Local Defects and Potential Barriers of SWNTs by P-SGM and P-AFMP |
Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, ICC, Kyoto Univ. 2@*Miyato Yuji 1, Nishi Ryuji 1, Kaneko Katsuhiro 1, Kobayashi Kei 2, Matsushige Kazumi 1, Yamada Hirofumi 1 |
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7 |
Electrical Characterization of Multi-Channel Carbon Nanotube FET by Magnetic Force Microscopy |
IIS 1, INQIE 2, Dept. of Quantum Eng. 3@*Masayuki Ato 1, Okigawa Yuki 3, Mizutani Takashi 3, Takahashi Takuji 1,2 |
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8 |
Effect of bias and gate voltages on device properties of CNTFETs fabricated by direct CNT growth method |
Jpn. Adv. Inst. Sci. Tech.@*Kawabuchi Hitoshi 1, Mohd Ambri Mohamed 1, Shikoh Eiji 1, Fujiwara Akihiko 1 |
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9 |
Fabrication and characterization of n-type top-gate carbon nanotube FETs with high-k gate insulator |
Dept. of Quantum Eng. Nagoya Univ. 1, VBL Nagoya Univ. 2@*Moriyama Naoki 1,Ohno Yutaka 1,Kishimoto Shigeru 1,2,Mizutani Takashi 1 |
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Break 16:15`16:30 |
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10 |
Fabrication and characterization of CNT thin-film transistor by using high purity semiconducting SWCNTs |
NRI, AIST 1, JST,CREST 2@*Shunjiro Fujii 1, Takeshi Tanaka 1, Hehua Jin 1, Yasumitsu Miyata 1, Hiroshi Suga 1, Yasuhisa Naitoh 1, Takeo Minari 1, Tetsuhiko Miyadera 1, Kazuhito Tsukagoshi 1, Hiromichi Kataura 1,2
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| ’ |
11 |
Formation and Electrical Characteristics of Ionic Liquids Encapsulated Single-Walled Carbon Nanotubes Using Electrolyte Plasmas |
Tohoku Univ. 1, CREST/JST 2@*Hirotsu Yu 1, Kaneko Toshiro 1,2, Hatakeyama Rikizo 1 |
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12 |
Fabrication and electrical transport features of atoms and molecules encapsulated pn junction single-walled carbon nanotubes |
Department of Electronic Engineering, Tohoku Univ. 1, Graduate School of Science and Engineering, Yamaguchi Univ. 2, Graduate School of Environmental Studies, Tohoku Univ. 3@T. Kato 1, J. Shishido 1, W. Oohara 2, R. Hatakeyama 1, K. Tohji 3 |
| ’ |
13 |
Electrical Transport Properties of pn Junction Created Using Thin Film of Carbon Nanotubes |
Tohoku Univ. 1@*Kato Tatsuya 1, Yongfeng Li 1, Kaneko Toshiro 1, Hatakeyama Rikizo 1 |
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14 |
Evaluation of electrical conductivity of carbon nanotubes / resin composites |
Tokai Univ. 1, Graduate School of Engineering, Tokai Univ. 2@Tsuchida Naohiro 1, Shirai Taro 2, Kuzumaki Toru 1 |
| ’ |
15 |
Characteristics of Carbon Nanotube Field Emitters for Electron Microscopes |
Nagoya University@*Kusano Yoshikazu, Asaka Koji, Nakahara Hitoshi, Saito Yahachi |
|
16 |
Development of GNF Emitter's Structure and its Growth Method |
ROHM@*Yamamuro Yutaka 1, Kato Tomohiro 1, Ueyama Daisuke 1, Nii Keisuke 1, Terumoto Koji 1 |
|
17 |
Electron field emission from twisted carbon nanofibers relocated by filamentary discharge treatment |
Toyohashi Univ. Technol. 1, Futaba Corp. 2, Tokai Carbon Co., Ltd. 3, Toho Gas Co., Ltd. 4@*Suda Yoshiyuki 1, Shinohara Yuichiro 1, Oke Shinichiro 1, Takikawa Hirofumi 1, Fujimura Yohei 2, Yamaura Tatsuo 2, Itoh Shigeo 2, Ue Hitoshi 3, Morioki Masakatsu 4
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| Joint Session F: Physics and Applications of Carbon Nanotubes |
| April 2 9:00`14:45 |
| 2a-TA-@/ I,II,III |
|
1 |
Thinning of Carbon Nanocoil Using Metal Catalyst Supported on Zeolite |
Toyohashi Univ. Technol. 1, Futaba Corporation 2, Tokai Carbon Co. , Ltd 3, Toho Gas Co. , Ltd 4@*Yokota Masashi 1, Suda Yoshiyuki 1, Oke Shinichiro 1, Takikawa Hirofumi 1, Fujimura Youhei 2, Yamaura Tatsuo 2, Ito Shigeo 2, Ue Hitoshi 3, Morioki Masakatsu 4 |
| £ |
2 |
Direct growth of carbon nanofibers on metal mesh substrates by ion irradiation method |
Nagoya Inst. of Tech. 1@*Zamri Yusop 1, Pradip Ghosh 1, Wang ZhiPeng 1, Y. Hayashi 1, M. Tanemura 1 |
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3 |
KCl-LiCl Flux Growth of Fibrous Ni Compounds on Surfaces of Carbon Nanotube Treated by Vacuum Ultraviolet Light |
Faculty of Engineering, Shinshu University@*Chikara Mori 1, SunHyung Lee 1, Katuya Teshima 1, Takaomi Suzuki 1, Shuji Oishi 1 |
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4 |
Growth of CNTs using Sputtered Fine Metal Particles Dispersed in Oil as Catalyst |
Kochi Univ. Technol. 1@*Harigai Tooru 1,Kagiyama Shinnya 1,Hatta Akimitsu 1 |
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5 |
Synthesis of carbon nanotube with metal catalyst solution |
Research Institute for Nanodevices,Kochi Univ. of Tech@*Kawabata Katsumasa,Furuta Hiroshi,Kawaharamura Toshiyuki,Furuta Mamoru,Hirao Takashi |
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Break 10:15`10:30 |
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| ’ |
6 |
Synthesis of carbon nanotubes from byproducts of oil refiner |
Osaka Univ. 1,Azerbaijian-MCIT 2@Matsuda Takanari 1,Ali Abbasov 2,Sevda Abdullayeva 2,Hirahara Kaori 1,Nakayama Yoshikazu 1 |
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7 |
In-situ environmental TEM observation of iron particle catalyst formation and carbon nanotube growth |
Osaka Univ. 1, Tokyo Univ. of Science 2@*Ohfuji Kazuto 1, Yoshida Hideto 1, Kohno Hideo 1, Takeda Seiji 1, Homma Yoshikazu 2 |
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8 |
Effect of Al2Ox thickness on carbon nanotube growth at low temperature by alcohol gas source method |
Meijo Univ. 1@*Sato Kuninori 1, Mizutani Yoshihiro 1, Maruyama Takahiro 1, Naritsuka Shigeya 1 |
|
9 |
Carbon nanotube synthesis using nanodiamond particles |
NTT Basic Res. Labs. 1, Tokyo Univ. of Science 2@Takagi Daisuke 1, Kobayashi Yoshihiro 1, Homma Yoshikazu 2 |
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10 |
Hot-filament CVD growth of single-walled carbon nanotubes from solid nanoparticles at lower temperature |
NTT Basic Research Labs. 1, Nagaoka Univ. Tech. 2, Tokyo Univ. Sci. 3@Takanami Tsubasa 1,2, Sakai Hiroshi 1,3, Takagi Daisuke 1, *Kobayashi Yoshihiro 1 |
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11 |
Development of the SWCNT Thin Film Deposition System |
AIST 1, JST-PRESTO 2, Meijo Univ. 3@*Takeshi Saito 1,2, Shigekazu Ohmori 1, Bikau Shukla 1, Motoo Yumura 1, Sumio Iijima 1,3 |
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Lunch 12:00`13:00 |
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| 2p-TA-@/ I,II,III |
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1 |
Horizontally-aligned growth of single-walled carbon nanotubes on the sapphire substrates annealed in air |
Tokyo Univ. of Science 1@*Chokan Tomohito 1, Uetake Tomoya 1, Chiashi Shohei 1, Homma Yoshikazu 1 |
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2 |
Deposition of catalyst nano-particles for growth of high-density horizontally aligned carbon nanotubes by arc-discharge plasma method |
Dept. of Quantum Eng. Nagoya Univ. 1,VBL Nagoya Univ. 2@*Hata Kensuke 1,Ohno Yutaka 1,Kishimoto Shigeru 1,2,Mizutani Takashi 1 |
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3 |
Top-down approach to aligned growth of single-walled carbon nanotubes on silicon wafer |
Kyushu Univ. 1, PRESTO-JST 2@*Ago Hiroki 1,2, Orofeo Carlo 1, Yoshihara Naoki 1, Tsuji Masaharu 1 |
| ’ |
4 |
Growth of aligned single-walled carbon nanotubes on patterned SiO2/Si substrates |
ISIR, Osaka Univ 1@*Kishimoto Takaomi 1, Iwasaki Shin 1, Ohno Yasuhide 1, Maehashi Kenzou 1, Inoue Koichi 1, Matsumoto Kazuhiko 1 |
| ’ |
5 |
Chirality distribution dependence of single-walled carbon nanotubes grown with diffusion plasma CVD on gas pressure |
Tohoku Univ. 1@*Kuroda Shunsuke 1, Kato Toshiaki 1, Kaneko Toshiro 1,Hatakeyama Rikizo |
| ’ |
6 |
Chirality Control of Semiconducting Single-Walled Carbon Nanotubes by Free Electron Laser Irradiation |
Tokyo University of Science 1,Nihon University 2@*Sakai keijiro 1,Ishiduka Daisuke 2, Iwata Nobuyuki 2,Yamamoto Hiroshi 2 |
|
7 |
Large-scale and Long Growth of Vertical-aligned Single-walled Carbon Nanotube Forest by Gas Flow Control. |
AIST, Nanotube Research Center1@*Satoshi Yasuda1, Don, N, Futaba1, Motoo Yumura1, Sumio Iijima1, Kenji Hata1 |
| Joint Session K: Wide band-gap oxide semiconductor materials and devices |
| March 30 9:00`12:00 |
| 30a-ZK-@/ I,II |
|
1 |
Characterization of Zn1-xMgxO single crystal thin films by time-resolved photoluminescence spectroscopy |
AIST@*Shibata Hajime, Tampo Hitoshi, Maejima Keigo, Matsubara Kohji, Akimasa Yamada, Ishizuka Shogo, Niki Shigeru |
| ’ |
2 |
Observation of exciton-polariton emissions from ZnO epilayers grown by Helicon-Wave-excited-Plasma Sputtering Epitaxy |
CANTech, IMRAM-Tohoku Univ.@*Sawai Yutaka 1, Amaike Hiroaki 1, Onuma Takeyoshi 1, Hazu Koji 1, ChiChibu F. Shigehusa 1 |
| ’ |
3 |
Time resolved photoluminescence study of ZnO nanoparticles embedded in a hybrid polymer composite layer |
Waseda Univ. 1, Div. of Electronic and Computer Engineering Hanyang Univ. 2, Div. of Materials Science and Engineering Hanyang Univ. 3@*Yu Saeki 1, Yoshiaki Nakazato 1, Sotaro Izumi 1, Takao Nukui 1, Atsushi Tackeuchi 1, Jung Jae Hun 2, You J. H. 2, Kim Tae Whan 2, Kim Young-Ho 3 |
| ’ |
4 |
Spin relaxation in bulk ZnO. |
Waseda Univ. 1, Div. of Electronic and Computer Engineering Hanyang Univ. 2@*Sotaro Izumi 1, Yu Saeki 1, Yoshiaki Nakazato 1, Takao Nukui 1, Atsushi Tackeuchi 1, Kim D. H. 2, Kim Tae Whan 2 |
|
5 |
Controlling the emission using optical near-field interaction among ZnO nanorod multiple-quantum-well structures |
Univ. Tokyo 1, Ricoh 2, SNU 3, SORST JST 4@Yatsui Takashi 1, Sangu Suguru 2, Kobayashi Kiyoshi 1, Kawazoe Tadashi 1, Yoo Jinkyoung 3, Yi Gyu-Chul 3, Ohtsu Motoichi 1,4 |
| |
|
Break 10:15`10:30 |
|
|
6 |
Low Temperature Photoluminescence Spectra of ZnO Films Grown by Atmospheric-pressure CVD Using Zn and H2O as Source Materials |
Ehime Univ. 1, Takuma National College of Technology 2@*Terasako Tomoaki 1, Taniguchi Kouta 2, Taira Keisuke 1, Miyata Akira 1, Yagi Masakazu 2, Shirakata Sho 1 |
|
7 |
Photoluminescence properties of ZnO nano particles embedded in alkali halide |
Osaka Inst. Tech. Nano. Center 1@*Harada Yoshiyuki 1 |
|
8 |
Luminescence Properties of Eu doped ZnO Films deposited by the PLD Method |
Toudai Univ 1@*Osone Takamasa 1,Matsui Hiroaki 1,Ono Yousuke 1, Seki Munetoshi 1, Tabata Hitoshi 1 |
| £ |
9 |
Low Temperature Annealing Effect on Photoluminescence Property of ZnO: Zn Thin Film Deposited by RF Magnetron Sputtering |
Nano-device Inst., Kochi Univ. Tech@Chaoyang Li, Tokiyoshi Matsuda, Toshiyuki Kawaharamura, Hiroshi Furuta,Takahiro Hiramatsu,Mamoru Furuta, Takashi Hirao |
| £’ |
10 |
Luminescent properties of Zn-based oxides grown by thermal oxidation of ZnS |
Shizuoka Univ.@*Qing Yang, H. Kukino, T. Yasuda, H. Tatsuoka |
|
11 |
Fabrication of multi-dimensional periodical polarity inverted ZnO heterostructure and application |
Tohoku Univ. CIR 1, Tohoku Univ. Engieering 2, Tohoku Univ. Science 3, Chungnam Univ 4, Korea Maritime 5@*Park Jinsub 1,2, Yamazaki Yoshiki 2, Tahahawshi Yoshihiro 2, Iwanaga Masanobu 3, T. Minegishi 1, Lee Sanghyun 1, Park Seunghwan 1, Im Inho 1, Hong Soonku 4, Chang Jiho 5, Cho Meoungwhan 1, Fujiwara Takumi 2, Yao Takafumi 1 |
| Joint Session K: Wide band-gap oxide semiconductor materials and devices |
| March 31 9:00`18:00 |
| 31a-ZK-@/ I,II |
|
1 |
Spin-dependent transport phenomena in the Zn0.88Mn0.12O/ZnO heterostructures |
Osaka Prefecture Univ. @Masuko Keiichiro, Ashida Atsushi, Yoshimura Takeshi, Fujimura Norifumi |
|
2 |
Fabrication and magnetic properties of Cu doped ZnO nanostructures by irradiation method |
Nagoya Inst.Technol. 1,Nanyang Tech.Uni. 2@*Yuhei Akaike 1,Norihiro Ide 1,Yasuhiko Hayashi 1,Masaki Tanemura 1,F.Y.Ran 1,S.P.Lau 2 |
|
3 |
Formation mechanism of high density 2DEG and band profile for ZnMgO/ZnO heterostructures |
AIST 1, TUS 2@Tampo Hitoshi1, Shibata Hajime1, Maejima Keigou1, Chiu Te-Wei1, Itoh Hiroshi1, Yamada Akimasa1, Matsubara Koji1, Fons Paul1, Kashiwaya Satoshi1, Yusuke Chiba2, Wakamatsu Tohru2, Kanie Hisashi2, Niki Shigeru1 |
|
4 |
Cyclotron resonance in ZnO 2 dimensional electron systems |
NIMS 1, AIST 2@*Yasutaka Imanaka 1, Tadashi Takamasu 1, Hitoshi Tampo 2, Hajime Shibata 2, Shigeru Niki 2 |
|
5 |
Growth of Ga-doped ZnMgO on ZnO heterostructures by MOCVD |
JST plaza hiroshima 1, Shimane Univ. 2@*Nishimoto Naoki 1, Matsuo Yuki 2, Takuwa Itaru 2, Yasuhisa Fujita 2 |
|
6 |
Preparation of NiO:Cu thin films by helicon-wave-excited-plasma sputtering method |
Tokyo Univ. of Science 1, IMRAM Tohoku Univ. 2@*Murata Yoshitsuna 1, Takahata Satoru 1, Nakanishi Hisayuki 1, Sugiyama Mutsumi 1, Chichibu Shigefusa 2 |
| |
|
Break 10:30`10:45 |
|
|
7 |
Seebeck coefficient of 2DEG layer in the LaAlO3/SrTiO3 heterointerface |
Nagoya Univ. 1,PRESTO-JST 2,The Univ. Tokyo 3,@Kume Atsushi 1,Ohta Hiromichi 1 2,Koumoto Kunihito 1,Mizoguchi Teruyasu 3,Ikuhara Yuichi 3 |
|
8 |
Resistivity evaluation of ZnO single crystal using the LFB ultrasonic material characterization system |
Tohoku Univ.@Kushibiki Jun-ichi 1, *Ohashi Yuji 1, Mototaka Arakawa 1 |
|
9 |
Thin film formation of ΐ-Ga2O3 and GaN on sapphire substrate and lift-off using ZnO layer |
Ishinomaki Senshu Univ. 1@*Nakagomi Shinji 1, Kokubun Yoshihiro 1 |
|
10 |
Low temperature deposited GaOx films and its application to surface layer of OPC |
Fujixerox 1@*Yagi Shigeru 1, Iwanaga Takeshi 1, Torigoe Nobuyuki 1 |
|
11 |
Production of Low-Li ZnO Substrate by High Temperature Annealing |
Tokyo Denpa Co., Ltd.1, Mitsubishi Chemical Corp.2@*Sasaki Hayato 1, Suzuki Takao 1, Maeda Katsumi 1, Kamada Kazunori 2, Fujisawa Hideo 2 |
| |
|
Lunch 12:00`13:00 |
|
| 31p-ZK-@/ I,II |
| ’ |
1 |
Fabrication and characterization of TFTs using ZnO films grown on glass substrates by PLD |
OIT NMRC@Taichi Yoshida, Fujiwara Kenji, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue |
|
2 |
Sputtering deposition of IZO/ZnMgO heterostructure on a glass substrate and its application to pH sensors |
Osaka Inst. of Tech. 1@*Seiwa Yasuaki 1, Hashimoto Mitsuhiro 1, Koike Kazuto 1, Ogata Ken-ichi 1, Sasa Shigehiko 1, Inoue Masataka 1, Yano Mitsuaki 1 |
|
3 |
Effect of post thermal annealing of ZnO-TFTs by atomic layer deposition |
Nara Inst. of Science and Technology@*Kawamura Yumi 1, Uraoka Yukiharu 1, Yano Hiroshi 1, Hatayama Tomoaki 1, Fuyuki Takashi 1 |
|
4 |
Preparation of bis(acetylacetonato)zinc(II) anhydrate fiber by sublimation-crystallization process |
Sendai Nat. College Tech. 1, Tokyo Polytech. Univ. 2, IMR, Tohoku Univ. 3@*Seki Shigeyuki 1,Onodera Hisashi 1,Sekizawa Takumi 1,Sakuma Mio 1, Haga Koichi 1,Seki Yoshiyuki 2,Sawada Yutaka 2,Shishido Toetsu 3 |
|
5 |
Epitaxial growth of ZnO thin films prepared by MO-CVD method using bis(acetylacetonato)zinc(II) fiber |
Sendai Nat. College of Tech. 1@*Onodera Hisashi 1,Sakuma Mio 1,Seki Shigeyuki 1,Haga Koichi 1 |
|
6 |
Fabrication of ZnO thin film transistor using bis(acetylacetonato)zinc(II) fiber |
Sendai Nat. College of Tech. 1@*Sakuma Mio 1,Takizawa Yoshihiro 1,Seki Shigeyuki 1,Haga Kouichi 1 |
|
7 |
Improvement in characteristics of ZnO TFTs on plastic substrates utilizing excimer laser |
TRADIM 1, Tokyo Institute of Technology 2, NEC LCD Technologies, Ltd. 3C NEC Corporation 4 @*Mitsuru Nakata 1, 2, Kazushige Takechi 1, Kazufumi Azuma 1, Eisuke Tokumitsu 2, Hirotaka Yamaguchi 3, Setsuo Kaneko 3, 4 |
| ’ |
8 |
Improvement in characteristics of a-InGaZnO4 TFTs on plastic substrates utilizing excimer laser |
TRADIM 1, Tokyo Institute of Technology 2, NEC LCD Technologies, Ltd. 3C NEC Corporation 4@*Mitsuru Nakata 1, 2, Kazushige Takechi 1, Kazufumi Azuma 1, Eisuke Tokumitsu 2, Hirotaka Yamaguchi 3, Setsuo Kaneko 3, 4 |
|
9 |
Investigations on the dual-gate characteristics for a-InGaZnO4 TFTs |
TRADIM 1, NEC LCD Technologies, Ltd. 2, NEC Corporation 3@*Takechi Kazushige 1, Nakata Mitsuru 1, Azuma Kazufumi 1, Yamaguchi Hirotaka 2, Kaneko Setsuo 2,3 |
| |
|
Break 15:15`15:30 |
|
|
10 |
Fabrication of InGaZnO TFTs with direct patterned NiP and self-aligned process combined with Inkjet |
Brother Ind., Ltd. 1@*Ryoya Takahashi 1, Motoshi Itagaki 1, Noriko Miura 1, Ryuta Iijima 1, Yuji Shinkai 1 |
|
11 |
Characterization of sub-gap absorption in amorphous In-Ga-Zn-O by Constant Photocurrent Measurement (3) |
Nihon Univ.1, Tokyo Tech.2, JST ERATO-SORST3@*Kousaku Shimizu 1,3, Tokuyoshi Madeda 1, Kenji Nomura 2 , Masahiro Hirano 3, Toshio Kamiya 2,3,Hideo Hosono 2,3 |
|
12 |
The characteristics of the TFTs with Sn, W doped Indium oxide channels |
Bridgestone Corp. 1@*Shiino Osamu 1, Sugie Kaoru 1, Kotsubo Hidefumi 1 |
| ’ |
13 |
Synthesis and band-gap engineering of In2O3-based single-crystalline films |
IMR Tohoku Univ. 1, WPI-AIMR Tohoku Univ. 2, JST-CREST 3@*Oda Masato 1, Okude Masaki 1, Ohtomo Akira 1, Kawasaki Masashi 1,2,3 |
|
14 |
Characteristics of Schottky Photodiodes Based on ΐ-Ga2O3 Single Crystals with a Sol-Gel Prepared Cap Layer |
Ishinomaki Senshu Univ.@*Suzuki Rikiya, Nakagomi Shinji, Kokubun Yoshihiro |
|
15 |
Characteristics of Pt-Ga2O3 Schottky Diodes at High Temperatures |
Ishinomaki Senshu Univ.@Kokubun Yoshihiro, Kaneko Makoto, Nakagomi Shinji |
| ’ |
16 |
Flame Sensor Based on ΐ-Ga2O3 Substrate |
Kyoto Univ. 1, NLM 2@*Oshima, Takayoshi 1, Takeya Okuno 1, Arai Naoki 2, Takeda Satoshi 2, Kobayashi Satoshi 2, Hino Harumichi 2, Fujita Shizuo 1 |
|
17 |
ΐ-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy |
Kyoto Univ. 1, NLM 2@*Takayoshi Oshima 1, Takaya Okuno 1, Naoki Arai 2, Yasushi Kobayashi 2, Shizuo Fujita 1 |
|
18 |
Fabrication of MgxZn1-xO Schottky diodes and its carrier concentration |
RIE Shizuoka Univ. 1, ISOM UPM 2@*Nakamura Atsushi 1, Tsuboi Takako 1, Temmyo Jiro 1, Adrian Hierro 2, Elias Munoz 2 |
|
19 |
Pt/ZnO Schottky diode radiation detector |
Iwate Ind. Res. Inst. 1,Lightom Inc. 2,Iwate Univ. 3,Center for Regional Collabo. Iwate Univ. 4,Iwate Med. Univ. 5@*Haruyuki Endo 1, Michiko Kikuchi 1, Shunsuke Goto 2, Kazuyuki Meguro 1, Takashi Abe 1, Kyo Takahashi 1, Mitsuru Fujisawa 1, Shinya Narita 3, Yasube Kashiwaba 4, Eiichi Sato 5 |
| Joint Session K: Wide band-gap oxide semiconductor materials and devices |
| April 1 9:00`18:00 |
| 1a-ZK-@/ I,II |
| ’ |
1 |
High Rate Deposition of Al-doped ZnO (AZO) Films by Reactive Sputtering |
Aoyama Gakuin Univ. 1, Nissan Co. 2@*Nishi Yasutaka 1, Hirohata Kento 1, Oka Nobuto 1, Sato Yasushi 1, Yamamoto Isao 2, Shigesato Yuzo 1 |
| ’ |
2 |
Transparent conductive Nb-doped TiO2 films deposited by dc magnetron sputtering using a slightly reduced Nb-doped TiO2-x ceramic target |
Aoyama Gakuin Univ. 1, AGC Ceramics Co.,Ltd. 2@*Sanno Yuta 1, Sato Yasushi 1, Oka Nobuto 1, Kamiyama Toshihisa 2, Shigesato Yuzo 1 |
| ’ |
3 |
In-Situ Analysis on High Energy Negative Ions in the Sputtering Process to deposit a-IZO films |
Aoyama Gakuin Univ. 1, Panasonic Electric Works Co., Ltd. 2@*Sensui Sakae 1, Watanabe Daisuke 1, Sato Yasushi 1, Oka Nobuto 1, Ito Norihiro 2, Ide Nobuhiro 2, Shigesato yuzo 1 |
| ’ |
4 |
Relationships between carrier density and photoelectron emission properties for ITO thin films |
Aoyama Gakuin Univ. 1, Idemitsu Kosan Co.,Ltd. 2@*Takasaki Aiko 1, Sato Yasushi 1, Oka Nobuto 1, Utsuno Futoshi 2, Yano Koki 2, Shigesato Yuzo 1 |
| ’ |
5 |
Densification and grain growth of ITO transparent conducting films prepared at high temperature |
Tokyo Polytechnic Univ. 1@*Y Seki 1,Y Sawada 1,M H Wang 1,H Lei 1,Y Hoshi 1,T Uchida 1 |
| £ |
6 |
Effect of water vapor introduced during sputtering on the thermal crystallization kinetics of amorphous ITO thin films |
Tokyo Polytechnic Univ.1, Rigaku Co.2@*Meihan Wang1, Yutaka Sawada1, Hao Lei1, Yoichi Hoshi1, Takayuki Konya2, Akira Kishi2CTakeshi Kondo1, Yoshiyuki Seki1, Takayuki Uchida1 |
| |
|
Break 10:30`10:45 |
|
| ’ |
7 |
High Rate Deposition of Sb-doped SnO2 (ATO) Films by Reactive Sputtering |
Aoyama Gakuin Univ. 1, Bridgestone Co. 2@*Muto Yu 1, Nishi Yasutaka 1, Hirohata Kento 1, Oka Nobuto 1, Sato Yasushi 1, Iwabuchi Yoshinori 2, Kostubo Hidefumi 2, Yoshikawa Masato 2, Shigesato Yuzo 1
|
| ’ |
8 |
Electrical and thermophysical properties of Ta doped SnO2 thin films deposited by rf magnetron sputtering |
Aoyama Gakuin Univ. 1,AIST 2@*Saori Yamada 1,Kentaro Kimura 1,Takashi Okabe 1,Takashi Yagi 2,Naoyuki Taketoshi 2,Tetsuya Baba 2,Nobuto Oka 1,Yasushi Sato 1,Yuzo Shigesato 1 |
|
9 |
Optical Dielectric Constants of Conductive ZnO Films Deposited on Glass II |
Nanotechnology Research Institute AIST 1, Research Center for Photovoltaics AIST 2, Electronics Research Institute AIST 3@*IKEGAMI Keiichi 1, YOSHIYAMA Takashi 2, MAEJIMA Keigou 2, SHIBATA Hajime 3, TAMPO Hitoshi 2, NIKI Shigeru 2 |
|
10 |
IR-RAS Measurements of LB films of a Merocyanine-Dye J-Aggregate on Transparent Electrodes Made of Doped Zinc Oxide |
Nanotechnology Research Institute AIST 1, Research Center for Photovoltaics AIST 2, Electronics Research Institute AIST 3@*IKEGAMI Keiichi 1, YOSHIYAMA Takashi 2, MAEJIMA Keigou 2, SHIBATA Hajime 3, TAMPO Hitoshi 2, NIKI Shigeru 2 |
|
11 |
Transparent conductive Ga-doped ZnO films co-sputtered from ECR and RF magnetron sources |
NTT MI Lab 1@Akazawa Housei 1 |
| |
|
Lunch 12:00`13:00 |
|
| 1p-ZK-@/ I,II |
|
1 |
Relationship between properties on target used and transparent conducting ZnO films by dc+rf magnetron sputtering deposition |
Kanazawa I.T. 1@Oda Junichi 1,Fukada Haruki 1,Miyata Toshihiro 1,Minami Tadatsugu 1 |
|
2 |
Stabilities of Transparent Conducting Impurity-doped ZnO Thin Films Prepared by rf+dc Magnetron Sputtering |
Kanazawa I.T. 1@*Manabu Konagai 1,Nomoto Junichi 1,Okada Kenji 1,Fukada Haruki 1,Miyata Tosihiro 1,Minami Tadatsugu 1 |
|
3 |
Affects of sputtering apparatus and targets used on impurity-doped ZnO thin films deposited by dc magnetron sputtering |
Kanazawa I.T. 1@*Nomoto Junichi 1,Konagai Manabu 1,Fukada Haruki 1,Miyata Toshihiro 1,Ishii Makoto 1,Minami Tadatsugu 1 |
|
4 |
Fabrication of ZnMgO Transparent Conducting Films by Multi-Cathode RF-Magnetron Sputtering |
AIST 1@Maejima Keigou 1, Shibata Hajime 1, Tampo Hitoshi 1, Niki Shigeru 1 |
|
5 |
Transparent Conductive GZO Films on Non-heating Substrate Prepared by RF Plasma Assisted DC Magnetron Sputtering |
Graduate School of Engineering, Tottori Univ. 1,Oike & Co., Ltd. 2,TEDREC 3@*Toshio Hinoki 12,Hideaki Agura 2,Kenji Yazawa 2,Koutoku Ohmi 13 |
|
6 |
Effects of bias voltage on properties of PLD-grown transparent conducting zinc oxide films. |
Nagoya Inst. of Tech. 1,Nagoya Inst. of Tech. 2 @*Nishie Ryota 1,Sugimoto Yuki 2,Abe Koji 2 |
|
7 |
Low-temperature deposition of Ga doped ZnO thin film by MOCVD method |
Shimane Univ. 1@*Tamura Kotetsu 1,Shimamura Yukihiro 1,Toyohara Hiroyasu 1,Yamada Yasuji 1,Kubo Shugo 1,Fujita Yasuhisa 1 |
| ’ |
8 |
Fabrication of transparent conducting films with double texture structure for thin film solar cells |
Osaka Sangyo Univ. 1,Okuda Technical Office. 2@*Nakamura Yoshinobu 1,Nakamura Keita 1,Aoki Takanori 1,Suzuki Akio 1,Matsushita Tatsuhiko 1,Okuda Masahiro 2 |
|
9 |
Sputter deposition of Al-doped ZnO films with various incident angles |
Sch. Sci. & Eng., Aoyama Gakuin Univ. 1, Cen. Instrum. Anal., Aoyama Gakuin Univ. 2@*Yasushi Sato 1, Kei Yanagisawa 1, Shin-ichi Nakamura 2, Nobuto Oka 1, Yuzo Shigesato 1 |
| |
|
Break 15:15`15:30 |
|
|
10 |
Influence of annealing on optical properties of Ga doped ZnO films deposited by reactive plasma deposition |
Kochi Univ. of Tech. 1, Ehime Univ. 2@*Hisao Makino 1, Aki Miyake 1, Takahiro Yamada 1, Naoki Yamamoto 1, Sho Shirakata 2, Tetsuya Yamamoto 1 |
|
11 |
Variation of Electron Scattering Mechanism on Thickness of GZO Films Prepared by Reactive Plasma Deposition |
Research Inst. Kochi Univ. of Tech. 1@*Takahiro Yamada 1, Aki Miyake 1, Hisao Makino 1, Naoki Yamamoto 1, Tetsuya Yamamoto 1 |
|
12 |
Technology of Fine-Line Patterning by Wet-Chemical Etching for Highly Transparent Conductive Ga-Doped ZnO Thin Films |
Kochi Univ. of Tech. 1, Mitsubishi Gas Chemical Co. Inc. 2, ZnO Labo Co. Ltd. 3, Geomatec Co. Ltd. 4, CASIO Computer Co. Ltd. 5
@*Naoki Yamamoto 1, Satoshi Okabe 2, Masahide Matsubara 2, Taketo Maruyama 2, Satoshi Osone 3, Hiroaki Iwaoka 4, Hitoshi Hokari 5, Hisao Makino 1, Takahiro Yamada 1, Aki Miyake 1, Tetsuya Yamamoto 1 |
|
13 |
Relationship between residual stress properties and electrical properties of GZO films deposited on COP substrates |
Research Inst., Kochi Univ. of Tech.@Aki Miyake, Naoki Yamamoto, Takahiro Yamada, Hisao Makino, Tetsuya Yamamoto |
|
14 |
Reducing the resistance of ZnO transparent conductive film by employing pure oxygen ICP in the VHF range |
Ibaraki UnivD1@Naoyuki Sato 1, Kouhei Uto 1, Yoshinori Yoshida 1, Takashi Ikehata 1 |
|
15 |
Fabrication and Characterization of In doped ZnO thin film by Ultrasonic Spray CVD method |
Tokyo Metropolitan Univ@* Xiong Yue,Fujikawa Kazuya,Nakao Kenta,Kase Tomoya,Sugawara Hiroharu |
|
16 |
Effect of atmosphere at thermal treatment of sputtered Ga-doped ZnO thin films |
tokyo Univ of science@Ryo takeda ,Yuji nozaki ,Akio furukawa |
|
17 |
The influence of the substrate temperature on electrical characteristic of a ZnO:B,Ga thin film |
Iwate Univ. 1, Miyazaki Univ. 2@*Yasuyuki Ota 2, Mitsuru Sato 1, Osamu Michikami 1 |
| ’ |
18 |
Al,B and Ga-doped ZnO transparent conductive films prepard by sputtering method |
Iwate Univ.1,Miyazaki Univ.2@*Sato Mitsuru 1,Ota yasuyuki 2,Amarsanaa Khuujii 1,Michikami Osamu 1 |
|
19 |
The decision of the atomic arrangement of IGZO crystal by ultra-high resolution HAADF-STEM observation |
MST@*Shibuya Kazunari 1, Tashiro Yoshiyuki 1, Sasaki Tatsuo 1, Yamazaki Toru 1, Yanagisawa Keiichi 1 |
| Joint Session K: Wide band-gap oxide semiconductor materials and devices |
| April 2 9:00`15:00 |
| 2a-ZJ-@/ I,II |
|
1 |
Growth and Shape Control of ZnO Nanostructures by Atmospheric-pressure CVD Utilizing Altenate Source Supply |
Ehime Univ. 1@Terasako Tomoaki 1, Saito Daisuke 1, Nishinaka Atsushi 1, Miyata Akira 1, Shirakata Sho 1 |
| £ |
2 |
Phosphorus doped ZnO wires grown with PLD and CVD |
Kyushu Univ.1
leipzig Univ. 2@*B. Q. Cao 1, M. Matsumoto 1, T. Matsumoto 1, T. Okada 1CM. Lorenz 2, M. Grundmann 2 |
|
3 |
Preparation of ZnO nanocrystal on CNT by electrochemical deposition method |
Osaka Pref. Univ. 1@*Sakiyama Haruka 1, Yoshimura Takeshi 1, Ashida Atsushi 1, Fujimura Norifumi 1 |
|
4 |
Electrical and optical properties of individual ZnO nanowires |
NIMS MANA 1@* Sakurai Makoto 1, Wang Yuguang 1, Aono Masakazu 1 |
|
5 |
Improvements of chemical stability of ZnO nanorods by aminosilane modification |
Osaka Inst. Tech.@Ogata Ken-ichi, Dobashi Hideaki, Koike Kazuto, Sasa Shigehiko, Inoue Masataka, Yano Mitsuaki |
| |
|
Break 10:15`10:30 |
|
| ’ |
6 |
Growth control of Zn and ZnO nanowires using Solid-Vapor-Process and I-V measurements |
PRESTO-JST 1, Univ. of Tsukuba 2@*Tatsuro Oishi 2, Yuuta Ikeda 1 2, Ryuuichi Ueki 1 2, Ryosuke Endo 1 2, Ikumi Suzuki 1 2,Jun-ichi Fujita 1 2 |
|
7 |
High-performance UV photodetector made of ultra-long ZnO bridging nanowires |
The Univ. of Tokyo@*Uchino Ryohei 1, Li Yanbo 1, Nagatomo Ippei 1, Shuzo Masaki 1, Yamada Ichiro 1, Jean-Jacques Delaunay 1 |
|
8 |
Effect of CO2 partial puressure on growth of ZnO crystals by CVT |
Nagoya Inst. of Tech. 1@*Masanori Oiwa 1, Tomonari Sasayama 1, Koji Abe 1 |
|
9 |
Effect of thermal annealing on the physical properties of ZnO films grown on sapphire substrates |
NIMS 1, Kyushu Univ. 2@*Adachi Yutaka 1COhashi Naoki 1,2CMatsumoto Kenji 1,2, Sakaguchi Isao 1, Haneda Hajime 1,2 |
|
10 |
Effect of high pressure vapor anneal treatment of the interface between ZnO and SiO2 thin film |
NAIST@Mami Fujii 1,Yukiharu Uraoka 1,Hiroshi Yano 1,Tomoaki Hatayama 1,Takashi Fuyuki 1 |
|
11 |
Hydrogen treatment effects of ZnO grown by sol-gel method |
Ishinomaki Senshu Univ.@Utsumi Musasi 1, Suzuki Yuma 1, *Yasuda Takashi 1 |
| |
|
Lunch 12:00`13:00 |
|
| 2p-ZJ-@/ I,II |
|
1 |
Charge compensation and surface band structure of doped zinc oxide |
NIMS 1, Kyushu Univ. 2@Ohashi Naoki 1,2, Sakaguchi Isao 1, Adachi Yutaka 1, Matsumoto Kenji 1,2, Ueda Shigenori 1, Yoshikawa Hideki 1, Kobayashi Keisuke 1, Haneda Hajime 1,2 |
|
2 |
Co-doping of nitrogen and tellurium atoms into ZnO films |
Tohoku Univ., CIR 1A Korea Maritime Univ.2A Hoseo Univ.3@Seunghwan Park 1, Jiho Chang 2, Tsutomu Minegish 1, Dongcheol Oh 3, Jinsub Park 3, Takafumi Yao 1 |
| ’ |
3 |
Formation of p-type ZnO epitaxial layer using N and Cu Co-doping |
Kyushu Inst. Tech. 1, Nihon Colmo 2, Res. Cen. Adv. Eco-fitting. Tech. 3@*Akihiro Tomie 1, Takahiro Nakano 1, Kiyoshi Ishitani 2, Motoi Nakao 1,3 |
|
4 |
Conduction properties of Nitrogen doped ZnO thin films grown by molecular beam epitaxy
~Detailed studies of ZnO thin films grown on homo -and hetero -substrates ~
|
totori Univ.@Y.Ishihara 1, K.Enomoto 1, T.Taya 1,J.Yoshikawa 1, H.Nakamura 1, K.Fujino 1, Y.Yamazaki 1, T.Ohno 1, T.Abe 1, H.Kasada 1, K.Ando 1 |
| ’ |
5 |
Detailed study of acceptor in N-doped ZnO thin films grown by Molecular Beam Epitaxy
~ Metastability of Nitrogen acceptor~ |
Tottori Univ 1,@*Yamazaki Yuki 1,Yoshikawa Jun-ichi 1,Ohno Takayuki 1,Taya Tomoki 1,Ishihara Yuya 1,Enomoto Keishi 1,Nakamura Hiroto 1,Fuzino Kazuya 1,Abe Tomoki 1,Kasada Hirofumi 1,Ando Koshi 1,
|
| ’ |
6 |
Fabrication and Properties of p-n Junction Diodes Utilizing p-type Zn1-xCuxO Thin Film |
Graduate School of Eng. Sci., Osaka Univ.@*Shoji Taisaku 1,Kizaki Yoshihiro 1,Toyama Toshihiko 1,Okamoto Hiroaki 1 |
|
7 |
Improvement of sol-gel n-ZnO/p-Si hetero junction characteristics by hydrogen-annealing |
Akita Prefectural Univ. 1@*Kazunori Abe 1, Takao Komiyama 1, Yasunori Chonan 1, Hiroyuki Yamaguchi 1, Takashi Aoyama 1 |
|
8 |
Degradation of rectification properties for In /ZnO:P/ ZnO:Ga MIS Structure |
Akita Prefectural Univ. 1@*Sasaki Kazuhiro 1,Komiyama Takao 1,Chonan Yasunori 1,Yamaguchi Hiroyuki 1, Aoyama Takashi 1 |
| Joint Session K: Wide band-gap oxide semiconductor materials and devices |
| April 2 9:00`15:00 |
| 2a-ZK-@/ I,II |
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1 |
Growth of ZnO on highly oriented pyrolytic graphite by electrochemical deposition |
Wakayama Univ. 1@*Ishii Yoshinori 1, Tanaka Ichiro 1, Uno Kazuyuki 1 |
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2 |
ZnO thin films prepared by an atmospheric pressure cold plasma generator using Zn-MOPDII |
Takamatsu National College of Technology 1,Kagawa Univ 2@Hasui Yuya 1,Ishida Hideyuki 1,Shikama Tomokazu 1,Suzaki Yoshihumi 2 |
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3 |
Growth of ZnO film by using Hot Wire-Metal Organic Chemical Vapor Deposition |
RIE. Shizuoka Univ. 1@*Hakamata Yasufumi 1,Ogawa Yasuhiro 1,Nakamura Atsushi 1,Temmyo Jiro 1 |
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4 |
Growth of MgZnO film by MOCVD equipped with laser heating system |
NIMS 1, Tokyo Univ. 2, Tokyo Inst. of Tech 3@*Seitaro Ito 1,2, Masatomo Sumiya 1, Masahiro Mieno 1, Shingo Maruyama 3, Yuji Matsumoto 3, Hideomi Koinuma 1,2 |
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5 |
Improving properties of ZnO film grown by temperature modulated MOCVD |
NIMS 1, Univ of Tokyo. 2@*M. Sumiya 1, E. Fujimoto 1, K. Watanabe 1, S. Koizumi 1, and H. K. Koinuma 2 |
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Break 10:15`10:30 |
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6 |
Study on Source Supply Condition of MOCVD Growth of Polycrystalline ZnO/Glass Thin Films |
Ehime Univ. 1@*Yura Shinichiro 1, Azuma Suguru 1, Miyata Akira 1, Yudate Sinji 1, Terasako Tomoaki 1, Shirakata Syo 1 |
| £ |
7 |
Thickness distributions of ZnO-based films on the Horizontal chamber RPE-MOCVD |
RIE Shizuoka Univ.@Iwama Keita 1, Earfan Hamid 1, Kenji Yamamoto 1, Atsushi Nakamura 1, Temmyo Jiro 1 |
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8 |
Morphology control of ZnO crystals grown by electrochemical method |
Osaka Prefecture Univ.1@*Nouzu Naoya ,Sakiyama Haruka ,A. Ashida ,Yoshimura Takeshi ,and Fujimura Norifumi |
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9 |
Growth mode of homoepitaxy in ZnO(11-20): Correlation of A and M-plane |
Univ. of Tokyo@*Hiroaki Matsui 1, Munetoshi Seki 1, Hitoshi Tabata 1 |
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10 |
Growth of ZnO single-crystalline layer by UHV sputtering methodiIj |
Tokyo Denki Univ@1,@*Matsuyama Takayuki 1,Sato Takashi 1,Kaneko Satoshi 1,Nagae Tomomi 1,Shinoda Hiroyuki 1,Mutsukura Nobuki 1 |
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11 |
Growth of ZnO single-crystalline layer by UHV sputtering method (II) |
Tokyo Denki Univ. 1@*Nagae Tomomi 1, Shinoki Yoichi 1, Tanaka Yohei 1, Matsuyama Takayuki 1, Mutsukura Nobuki 1 |
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Lunch 12:00`13:00 |
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| 2p-ZK-@/ I,II |
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1 |
Characterization of ZnO layers grown on ZnO substrates by halide vapor phase epitaxy at high temperatures |
Tokyo Univ. of Agri. & Tech. 1, ROHM CO., LTD. 2, Tokyo Electron Ltd. 3@*Yoshinao Kumagai 1, Rui Masuda 1, Tetsuo Fujii 1,2, Naoki Yoshii 3, Akinori Koukitu 1 |
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2 |
High-temperature growth of ZnO thin films by HVPE using ZnCl2 and H2O as source gases |
Tokyo Univ. of Agri. & Tech. 1, ROHM CO., LTD. 2, Tokyo Electron Ltd. 3@*Masuda Rui 1, Fujii Tetsuo 1,2, Yoshii Naoki 3, Kumagai Yoshinao 1, Koukitu Akinori 1 |
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3 |
Growth of ZnO on ZnO/sapphire templates by halide vapor phase epitaxy |
Tokyo Univ. of Agri. Tech. 1, ROHM CO., LTD. 2, Tokyo Electron Ltd. 3@*Someya Shota 1, Masuda Rui 1, Fujii Tetsuo 1,2, Yoshii Naoki 3, Kumagai Yoshinao 1, Koukitu Akinori 1 |
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4 |
Synthesis and characterization of Zn1-xMgxO thin films fabricated by sol-gel method |
Kyoto Inst. Tech. 1, Wakayama Univ. 2@Hasuike Noriyuki 1, Katoh Hiroyuki 1, Kiyohara Toru 1, Suzuki Atsuyoshi 1, Kisoda Kenji 2, Nishio Koji 1, Isshiki Toshiyuki 1, Harima Hiroshi 1 |
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5 |
Double Layer Growth of LBMO/ZnO, and Crystallinities and Orientations |
Mie University 1,Tokyo University of Technology 2,Madras University 3@Keisuke Morikawa 1,Daichi Ashida 1,Tatsuya Yoshii 1,Hironao Iwanaga 1,
Yuji Nakamura 1,Yoshiki Sato 1,Masahito Matsui 1,Hiroshi Kezuka 2,Rita John 3,
*Tamio Endo 1 |
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6 |
Fabrication of LSMO/ZnO Double Layers by IBS, and Crystalline Orientations |
Mie Univercity 1CKanazawa Institute of Technology 2, S.V.D. College 3, Texas Christian Univ. 4@*Tatsuya Yoshii 1,Keisuke Morikawa 1,Daichi Ashida 1,Yasuaki Sakamoto 1,Daiki Higashiguchi 1,Yuichi Nakamura 1,Kazuhiro Endo 2, S.L.Reddy 3, Y.Strzhemechny 4
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7 |
Heteroepitaxy growth in CdZnO/ZnO and a lattice distortion at a heterointerface |
Univ. of Tokyo@*Hiroaki Matsui 1, Munetoshi Seki 1, Hitoshi Tabata 1 |
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8 |
RPE-MOCVD growth of polar and non-polar ZnCdO |
Graduate School of Sci. and Tech., Shizuoka Univ. 1, Res. Inst. of Electronics, Shizuoka Univ. 2@*Yamamoto Kenji 1, Tsuboi Takako 2, Nakamura Atsushi 2, Temmyo Jiro 1,2 |