| Joint Session |
| Joint Session K: Zinc Oxide and Related Functional Materials |
| March 17 9:00`17:15 |
| 17a-TL - 1`11 |
| ’ | 1 | Evaluation of phase stability for (Sr,AII)Cu2O2 (AII=Ca, Ba) by first-principles calculations | Department of Materials Chemistry, Ryukoku Univ. 1@*Kojima Yasumasa, Maeda Tsuyoshi, Wada Takahiro |
| 2 | In2-XGaXZnO4-Β Solid-Solution System Synthesized by Ceramics Solid Reaction Method | FUJIFILM@*Umeda Kenichi 1,Tanaka Atsushi 1,Suzuki Masayuki 1 |
| 3 | Fabrication and Electrical Characteristic of InGaZnO4 Single Crystalline Thin Film | FUJIFILM 1@*Nara Yuki 1,Takata Masahiro 1,Umeda Kenichi 1,Mochizuki Fumihiko 1,Tanaka Atsushi 1,Suzuki Masayuki 1 |
| £ | 4 | Microstructure analysis of the reaction interface of Cu-Mn/In-Ga-Zn-O films | Tohoku Univ.1@*P. S. Yun@1, J. Koike@1@@@@@
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| 5 | IGZO TFT characteristics in large-scale substrate | ULVAC Inc@T. Kurata, Y. Yanagi, T. Isobe, Y. Akamatsu, M. Arai, J. Kiyota, S. Ishibashi, K. Saito |
| 6 | Improvement in IGZO TFT characteristics by H2 plasma treatment followed by H2O vapor heat treatment | TUAT 1, DNP 2@*Yuta Mizutani 1, Toshiyuki Sameshima 1, Katsuyuki Motai 2, Keita Arihara 2, Hiromi Maeda 2 |
| | | Break 10:30`10:45 | |
| 7 | Fabrication of In-Ga-Zn-O & In-Zn-O TFTs using Solution-Based Process | FUJIFILM 1@*Umeda Kenichi 1,Hirai Hiroyuki 1,Higashi Kouhei 1,Nangu Maki 1,Tanaka Atsushi 1 |
| 8 | Effect of GaO Layer on IGZO-TFT Channel | FUJIFILM 1@*Nakayama Masaya 1,Itai Yuuichirou 1,Tada Hiroshi 1,Imai Shinji 1,Mishima Yasuyoshi 1 |
| 9 | Photostability of Ga-rich Amorphous IGZO TFTs under Visible Light Irradiation | FUJIFILM 1@*Hama Takeshi 1,Mochizuki Fumihiko 1,Atsushi Tanaka 1,Suzuki Masayuki 1 |
| ’ | 10 | Characteristic Evaluation of CTFT Inverter using Amorphous Oxide TFT and Polymer Organic TFT | Dept.Science and Tech., Ryukoku Univ. 1, Materials and Structures Lab., Tokyo Tech. 2, Seiko Epson Corp. 3@*Nakanishi Takashi 1, Hasegawa Takayuki 1, Sakemi Mariko 1, Kimura Mutsumi 1, Nomura Kenji 2, Kamiya Toshio 2, Hosono Hideo 2, Aoki Takashi 3 |
| 11 | Bipolarity of SnO and fabrication of its pn homo-junction | Tokyo Tech 1, Yamanashi U.2@Ogo Youichi 1, Yanagi Horoshi 2, Kamiya Toshio 1, *Hosono Hideo 1 |
| | | Lunch 12:00`13:00 | |
| 17p-TL - 1`16 |
| |
1 |
Helicon-Wave-Excited-Plasma Sputtering Epitaxy of ZnO homoepitaxial films on Zn-polar ZnO substrates |
CANTech, IMRAM-Tohoku Univ.@*Sawai Yutaka 1, Amaike Hiroaki 1, Hazu Kouji 1, Chichibu F. Shigehusa 1 |
| 2 | Helicon-Wave-Excited-Plasma Sputtering Epitaxy of MgZnO heteroepitaxial films on Zn-polar ZnO substrates
| IMRAM-Tohoku Univ.@*Chichibu Shigefusa 1, Sawai Yutaka 1, Amaike Hiroaki 1, Hazu Kouji 1 |
| 3 | Dependence of carrier concentration on Mg mole fraction of Ga doped ZnOMgO | Tokyo Univ. of Science 1@*Imata Futa 1,Osuga Hiroki 1,Minato Satosi 1,Hurukawa Akio 1 |
| 4 | Role of Oxygen atoms in the Growth of Magnetron Sputter-Deposited ZnO Films | Saitama Univ 1@Morita Aya 1,Jin Jie 1,Shirai Hajime 1 |
| 5 | Growth of ZnO single-crystalline layer by UHV sputtering methodiVj | Tokyo Denki Univ 1, Bruker AXS K.K. 2@*Yoshida Keisuke 1, Tanaka Yohei 1, Asakura Kentaro 1, Nagae Tomomi 1, Matsuyama Takayuki@1, Shinoda Hiroyuki 1, Mutsukura Nobuki 1, Morioka Hitoshi 2, Saito Keisuke 2 |
| 6 | Growth of ZnO single-crystalline layer by UHV sputtering methodiVIj | Tokyo Denki Univ 1, Bruker AXS K.K. 2@*Tanaka Yohei 1, Yoshida Keisuke 1, Ueda Yuki 1,Ohno Shota 1, Nagae Tomomi 1, Matsuyama Takayuki@1, Shinoda Hiroyuki 1, Mutsukura Nobuki 1, Morioka Hitoshi 2, Saito Keisuke 2 |
| 7 | Electrochemical growth of zinc oxide films on graphite sheets | Wakayama Univ. 1@*Kenichi Takamatsu 1, Yoshinori Ishii 1, Kazuyiki Uno 1, Ichiro Tanaka 1, |
| 8 | Electrochemical deposition of ZnO on narrow lined electrode | Osaka Pref. Univ. 1@*Kondo Yusuke 1, Nouzu Naoya 1, Ashida Atsushi 1, Yoshimura Takeshi 1, Fujimura Norifumi 1 |
| | | Break 15:00`15:15 | |
| 9 | Effect of applied voltage on ZnO growth by PLD | Nagoya Inst. of Tech.@*Koji Abe, Ryota Nishie |
| 10 | Effect of impurity doping on the crystallographic polarity of ZnO thin films | NIMS 1@*Yutaka Adachi 1, Naoki Ohashi 1, Isao Sakaguchi 1, Hajime Haneda 1, Tsuyoshi Ohnishi 1, Shigenori Ueda 1, Hideki Yoshikawa 1, Keisuke Kobayashi 1 |
| ’ | 11 | First principle calculation of hydrogen terminated polar ZnO surface and the growth mechanism along oxygen-polarity | NIMS 1, Tohoku Univ. 2@*Ito Seitaro 1, Shimazaki Tomomi 2, Kubo Momoji 2, Koinuma Hideomi 1, Sumiya Masatomo 1 |
| 12 | Evaluation of MgZnO films grown by HVPE on ZnO substrates | Tokyo Electron Ltd. 1,ROHM CO.,LTD. 2,Tokyo Univ. of Agri.& Tech. 3@*Yoshii Naoki 1,Fujii Tetsuo 2,Masuda Rui 3,Kumagai Yoshinao 3,Koukitu Akinori 3 |
| 13 | Control of Solid Composition of MgZnO grown by HVPE method | ROHM Co., Ltd. 1, Tokyo Univ. of Agri. & Tech. 2, Tokyo Electron Ltd. 3@Fujii Tetsuo 1,2, Yoshii Naoki 3, Masuda Rui 2, Kumagai Yoshinao 2, Koukitu Akinori 2 |
| 14 | MOCVD Growth and Annealing Effect of ZnO Films | Grad. School of Sci. & Eng. Ehime Univ. 1, Fac. Eng. Ehime Univ. 2, Kagawa Nat. College of Tech. 3@*Terasako Tomoaki 1, Yamanaka Takahiro 1, Tsukamura Masashi 2, Miyata Akira 2, Yagi Masakazu 3, Shirakata Sho 1 |
| 15 | Temperature Dependence of Near Band Edge Emissions Observed on ZnO Films Grown by Atmospheric-pressure CVD | Kagawa Nat College of Tech.1,Grad School of Sci & Eng Ehime Univ.2@*Taniguchi Kouta 1,Terasako Tomoaki 2,Taira Keisuke 2,Yagi Masakazu 1,Shirakata Sho 2. |
| 16 | Growth of ZnO Films on r-Plane Sapphire Substrate by Atmospheric-pressure CVD and Effect of GaCl3 supply | Grad. School of Sci. & Eng., Ehime Univ. 1,Kagawa Nat. College of Tech 2,Fac. Eng., Ehime Univ. 3@*Taira Keisuke 1,Taniguchi Kouta 2,Kuribayashi Seisuke 3,Terasako Tomoaki 1,Miyata Akira 3,Yagi Masakazu 2,Shirakata Sho 1 |
| 21.1 Joint Session K: Zinc Oxide and Related Functional Materials |
| March 18 9:00`17:15 |
| 18a-TL - 1`11 |
| £ | 1 | Synthesis of ZnO in the microplasma jet chamber used to deposit the SiOx films | Saitama Univ. 1@Qingtao Pan 1, Hajime Shirai 1 |
| 2 | Low temperature synthesis of ZnO thin films by spin-coating process | Kyoto Inst. Tech. 1, Wakayama Univ. 2@Hasuike Noriyuki 1, Harada Tomoe 1, Kiyohara Toru 1, Kisoda Kenji 2, Harima Hiroshi 1 |
| ’ | 3 | Growth of ZnO films under air atmosphere | Univ. Miyazaki 1,Tosoh Finechem 2@*Takemoto Yujin 1,Oshima Minoru 1,Yoshino kenji 1,Toyoda Kouji 2,Inaba Koithiro 2,Haga Ken-ichi 2,Tokudome Kohichi |
| 4 | Improvements of Under-ZnO Crystallinities during Fabrication of LBMO/ZnO Double Layers | Mie Univ. 1,Tateho Chemistry 2, Kanazawa Institute of Technology 3@Tatsuya Yoshii 1,Keisuke Morikawa 1,Xiang Guo 1,Kazuhisa Niwano 2,Kazuhiro Endo 3,*Tamio Endo 1 |
| 5 | Double Layer Growth of LBMO/ZnO Thin Films, and their Orientations | Mie Univ. 1, Toyoshima Manufacturing Co.,Ltd 2, National Inst. of AIST 3,@*Tamio Endo 1, Kenichi Uehara 1, Keisuke Morikawa 1, Tatsuya Yoshii 1, Hidefumi Motobayashi 2, Tetsuo Tsuchiya 3, |
| | | Break 10:15`10:30 | |
| ’ | 6 | Control of carrier density in In2O3 single crystalline films | IMR Tohoku Univ. 1, Tokyo Tech. 2, WPI-AIMR Tohoku Univ. 3, JST-CREST 4@*Oda Masato 1, Okude Masaki 1, Ohtomo Akira 1,2, Kawasaki Masashi 1,3,4 |
| 7 | Characterization of Zinc Doped Indium Oxide (ZnO) Films Prepared by ultrasonic spray CVD method | Tokyo Metropolitan University 1@Yuusuke Kawasaki 1CTakahiro Suzuki 1CKou Itou 1CRyouta Sasaki 1CHiroharu Sugawara 1 |
| 8 | Electronic States of Hydrogen doped Plasma Sputter ITO Thin Films | Kyushu Inst. Tech. 1, Liaoning Inst. Tech. 2, Fukuoka Univ. 3, NIMS 4, Tsukuba Univ. 5, Kyushu Kyoritsu Univl 6@*Okada Koichi 1, Suning Luo 1,2, Kohiki Shigemi 1, Kohno Atsushi 3, Tajiri Takayuki 3, Arai Masao 4, Mitome Masanori 4, Sekiba Daiichiro 5, Shoji Fumiya 6 |
| 9 | Electrical and optical properties of tin dioxide thin film grown by spray method | Univ. Miyazaki@*Oshima Minoru, Yoshino Kenji |
| 10 | Preparation of Sb doped SnO2 transparent conducting films with heat resistance | Kyushu Institute of Technology 1@*Kishigawa Yusuke 1, Ueda Kazushige 1 |
| 11 | Fabrication of Nb:SnO2 Transparent Conductive Thin Films Using Seed-layer method | KAST@1, Univ. of Tokyo@2, Tohoku Univ.@3@*Nakao Shoichiro 1,2, Yamada Naoomi 1, Hitosugi Taro 1,3, Hirose Yasushi 1,2, Shimada Toshihiro 1,2, Hasegawa Tetsuya 1,2 |
| | | Lunch 12:00`13:00 | |
| 18p-TL - 1`16 |
| 1 | Characteristics of transparent conductive Nb:TiO2 films produced by co-sputtering | NTT MI Labs.@*Akazawa Housei |
| 2 | Stability of ZnO and GZO films upon thermal annealing in a vacuum | NTT MI Labs.@*Akazawa Housei |
| 3 | Fluorescence XAFS analysis of local structures in Ga-doped ZnO films | Kochi Univ. of Tech. 1, JASRI/SPring-8 2@Hisao Makino 1, Aki Miyake 1, Takahiro Yamada 1, Naoki Yamamoto 1, Hiroshi Oji 2, Tetsuo Honma 2, Tetsuya Yamamoto 1 |
| 4 | Control of intrinsic defects in Ga-doped ZnO films deposited by reactive plasma deposition | Kochi Univ. of Tech. 1,@*Yamada Takahiro 1,Makino Hisao 1,Yamamoto Naoki 1,Yamamoto Tetsuya 1, |
| 5 | Improvement of humidity resistance of Ga-doped ZnO thin films by indium incorporation | Hakusui Tech Co.,Ltd 1,Kochi Univ.Tech 2@*Senjyu Akira 1,Kuroiwa Nobuyuki 1,Yamamoto Taisei 1,Yamada Takahiro 2,Makino Hisao 2,Yamamoto Naoki 2,Yamamoto Tetsuya 2 |
| 6 | Influence of Alkaline Chemicals on Electrical and Optical Characteristics of Ga-doped ZnO Transparent Thin Films | Kochi Univ. Tech. 1,@Yamamoto Naoki 1, Osone Satoshi 1, Makino Hisao 1, Yamada Takahiro 1, Yamamoto Testuya 1 |
| 7 | Property improvement by controlling the deposition condition at the early stage of transparent conducting impurity-doped ZnO thin film deposited by magnetron sputtering | Kanazawa I.T. 1@Oda Jun-ichi 1,*Nomoto Jun-ichi 1,Ueda Osamu 1,Miyata Toshihiro 1,Minami Tadatsugu 1 |
| 8 | A comparative study of the stability of electrical property in transparent conducting impurity-doped ZnO thin films | O.E.D.S. R&D Center, Kanazawa I.T.@*Nomoto Jun-ichi 1,Konagai Manabu 1,Hirano Tomoyasu 1,Miyata Toshihiro 1,Minami Tadatsugu 1 |
| | | Break 15:00`15:15 | |
| 9 | Light transmittance properties in wide band of the ZnO transparent conductive film synthesized by ICP | Ibaraki Univ@*Yoshida Yoshinori 1,Yanagisawa Shinya 1,Sato Naoyuki 1,Ikehata Takashi 1 |
| 10 | GZO transparent conductive films on PET substrates prepared by RF plasma assisted DC magnetron sputtering | Graduate School of Engineering, Tottori Univ. 1,Oike & Co., Ltd. 2,TEDREC 3@*Toshio Hinoki 12, Hideaki Agura 2, Kenji Yazawa 2, Kentaro Kinoshita 13, Koutoku Ohmi 13, Satoru Kishida 13 |
| 11 | Characteristics of Highly Transparent Conductive Ga-doped ZnO Films Deposited | LINTEC Corp. 1, Kochi Univ.of Tech. 2@*Nagamoto Koichi 1, Matsubayashi Yumiko 1, Kondo Takeshi 1, Yamada Takahiro 2,
Makino Hisao 2, Yamamoto Naoki 2, Yamamoto Tetsuya 2 |
| 12 | IR-RAS study of fatty-acid LB films deposited on ZnO-based transparent electrodes | Nat. Inst. Adv. Indust. Sci. Tech. (AIST)@Takashi Sugimoto, Keiichi Ikegami, Takashi Yoshiyama, Keigo Maejima, Hajime Shibata, Hitoshi Tampo, Sigeru Niki |
| 13 | Resistivity distribution evaluation of ZnO single crystal using the micro LFB ultrasonic material characterization system | Graduate School of Engineering Tohoku University 1@*Sho Yoshida 1,Yuji Ohashi 1,Mototaka Arakawa 1,Jun-ichi Kushibiki 1,Noboru Sakagami 1 |
| 14 | First-principles electronic transport calculations on defects in ZnO | Fujitsu Labs. Ltd. 1, JAIST 2@*Hideyuki Jippo 1, Mari Ohfuchi 1, Taisuke Ozaki 2 |
| 15 | Effect of Hydrogen Plasma Treatment on Luminescence properties of Polycrystalline ZnO | Okayama Univ.@*Chihiro Takenaka 1, Takeshi Ishiyama 1, Yoichi Kamiura 1, Yoshifumi Yamashita 1 |
| 16 | Fabrication and magnetic properties of p-type C-doped ZnO thin films
by ion irradiation method | Nagoya Inst.Technol. 1, Hong Kong Poly. Univ. 2@*Akaike Yuhei 1, Hayashi Akari 1, Hayashi Yasuhiko 1, Tanemura Masaki 1, S. P. Lau 2 |
| 21.1 Joint Session K: Zinc Oxide and Related Functional Materials |
| March 19 9:00`17:15 |
| 19a-TM - 1`11 |
| ’ | 1 | Radiation hardness of zinc oxide films grown by molecular beam epitaxy | Osaka Inst. of Tech. 1, The Wakasa Wan Energy Res. Center 2@*Amano Takeshi 1, Koike Kazuto 1, Sasa Shigehiko 1, Yano Mitsuaki 1, Gonda Shun-ichi 1, Ishigami Ryoya 2, Kume Kyo 2 |
| ’ | 2 | Preparation of Al2O3 and ZnO thin films by atomic layer deposition for the application to thin film transistors | NAIST 1, CREST 2@*Kawamura Yumi 1, Uraoka Yukiharu 1,2 |
| ’ | 3 | Optical properties of ZnO thin films prepared by sputtering and its application to TFT | Kyoto Univ.1,Kochi Univ. of Tech. Research Institute for Nanodevices2@*Kamada Yudai1,Fujita Shizuo1,Kawaharamura Toshiyuki2,Hiramatsu Takahiro2,Matsuda Tokiyoshi2, Furuta Mamoru2,Hirao Takashi2 |
| 4 | Micro-fabrication of a solution-gate ZnO-based transistor and its pH detection characteristics | Osaka Inst. of Tech. 1@*Tsuji Kumiho 1, Koike Kazuto 1, Ogata Ken-ichi 1, Sasa Shigehiko 1, Inoue Masataka 1, Yano Mitsuaki 1 |
| ’ | 5 | Amperometric detection of glucose using ZnO nanorods | Osaka Inst.Tech. 1, Clarkson Univ. 2@*Dobashi Hideaki 1, Ogata Ken-ichi 1, Russel Paul 2, Koike Kazuto 1, Maemoto Toshihiko 1, Sasa Shigehiko 1, Yano Mitsuaki 1, Inoue Masataka 1 |
| | | Break 10:15`10:30 | |
| 6 | Development of TFT with ZnxSn1-xOy channel layers | Hitachi Central Research Lab. 1, Hitachi Metals Ltd. 2@*Hironori Wakana 1, Tetsufumi Kawamura 1, Hiroyuki Uchiyama 1, Fumi Kurita 2, Hideko Fukushima 2 |
| 7 | I-V characteristics of n-ZnO/p-Si hetero junction formed by bias voltage PLD technique | Akita Prefectural Univ.@*Yuhki Komazawa 1, Takao Komiyama 1, Yasunori Chonan 1, Hiroyuki Yamaguchi 1, Takashi Aoyama 1 |
| 8 | I-V characteristics of zinc oxide MIS structure formed by PLD method | Akita Prefectural Univ. 1@*Masahide Fujishima 1, Takao Komiyama 1, Yasunori Chonan 1, Hiroyuki Yamaguchi 1, Takashi Aoyama 1 |
| 9 | Development of new etching technique using the mist method | Research Inst. for Nanodevices, Kochi Univ. of Tech. 1@*Kawaharamura Toshiyuki 1, Hiramatsu Takahiro 1, Hirao Takashi 1 |
| 10 | Enhancement of band-edge UV emission of ZnO nanostructures by hydrogen plasma treatment | The Univ. of Tokyo 1@*Uchino Ryohei 1, Li Yanbo 1, Tokizono Takero 1, Shuzo Masaki 1, Yamada Ichiro 1, Delaunay Jean-Jacques 1 |
| 11 | Self-assembled bridging nanowires for use in UVC detection | The Univ. of Tokyo 1,The Univ. of Tokyo 2,The Univ. of Tokyo 3,The Univ. of Tokyo 4,NIMS 5,NIMS 6,The Univ. of Tokyo 7,The Univ. of Tokyo 8@*Tokizono Takero 1,Li Yanbo 2,Uchino Ryohei 3,Shuzo Masaki 4,Liao Meiyong 5,Koide Yasuo 6,Yamada Ichiro 7,Delaunay Jean=Jacques 8 |
| | | Lunch 12:00`13:00 | |
| 19p-TM - 1`16 |
| 1 | Physical properties of IrxSn1-xOy films as a function of substrate temperature | Univ. Miyazaki 1, Honda Lock Co. Ltd. 2@Harada Shun 1, Yoshino Kenji 1, Yoshihiko Kawano 2, Sei Fumihiro 2 |
| £ | 2 | Structural and room temperature ferromagnetic properties in powder form of Cr doped SnO2 solid solution
| Tokyo Univ. Marine Sci&Tech 1, Yuge National College of Maritime Tech 2, Hiroshima National College of Maritime Tech 3@Xu Kun 1, Izumi Mitsuru 1, Yanagisawa Osami 2, Ida Tetsuya 3 |
| ’ | 3 | SnO2 thin films grown by mist CVD method | Kyoto Univ. 1@*Okuno Takeya 1, Oshima Takayoshi 1, Fujita Shizuo 1 |
| 4 | Observation of alpha-Ga2O3/alpha-Al2O3interfaces by High Resolution Transmission Electron Microscope | Dept. Electron. Sci. & Eng., Kyoto Univ. 1@*Kaneko Kentaro 1, Fujita Shizuo 1 |
| 5 | Effect of Cr ion on luminescence of ΐ-Ga2O3 | Chitose Institute of Science and Technology. 1@*Wakai Hirohumi 1, Shinya Yuuta 1, Yamanaka Akio 1 |
| 6 | Characteristics of Au-Ga2O3 Schottky Photodiodes | Ishinomaki Senshu Univ.@*Suzuki Rikiya, Nakagomi shinji, Kokubun Yoshihiro
|
| 7 | Fabrication of Ga2O3 UV sensor and application for continuous monitoring system | Nippon Light Metal 1,Kyoto Univ. 2@Satoshi Takeda 1,Naoki Arai 1,Yasushi Kobayashi 1,Harumichi Hino 1,Takayoshi Oshima 2,Shizuo Fujita 2 |
| 8 | Fabrication of Mn-doped Α-Ga2O3 epitaxial film by pulsed laser deposition | Kyoto Univ. 1, JFCC 2@*Hayashi Hiroyuki 1, Huang Rong 2, Oba Fumiyasu 1, Tanaka Isao 1 |
| | | Break 15:00`15:15 | |
| 9 | Preparation of CdO Nanostructures by Atmospheric-pressure CVD Using Cd powder and H2O as Source Materials (II)
| Grad. School of Sci. & Eng. Ehime Univ. 1, Fac. Eng. Ehime Univ. 2, Kagawa Nat. College of Tech. 3@*Terasako Tomoaki 1, Fujiwara Teturo 2, Miyata Akira 2, Yagi Masakazu 3, Shirakata Sho 1 |
| 10 | Growth of ZnO nanorods using aqueous solution and their PL properties | Osaka Inst. Tech.@Ogata Ken-ichi , Dobashi Hideaki , Koike Kazuto , Sasa Shigehiko , Inoue Masataka , Yano Mitsuaki |
| 11 | Synthesis and Optical Properties of Colloidal Zinc Oxide Quantum Dots | Osaka Univ. 1, Kyoto Inst. Tech. 2@*Takahisa Omata 1, Kazuyuki Takahashi 1, Shinichi Hashimoto 1, Katsuhiro Nose 1, Shinya Otsuka-Yao-Matsuo 1, Kenji Kanaori 2 |
| ’ | 12 | Time-resolve photoluminescence study of Zn-based oxides grown by thermal oxidation of ZnS with Gs droplets | Waseda Univ. 1, Shizuoka Univ. 2@*T. Nukui 1, Q. Yang 2, H. Kukino 2, T. Yasuda 2, H. Tatsuoka 2, S. Izumi 1, Y. Saeki 1, A Tackeuchi 1 |
| 13 | Magnetic field dependence of the photoluminescence spectra in ZnO | National Institute of Advanced Industrial Science and Technology 1, National Institute for Materials Science 2@Hajime Shibata1, Yasutaka Imanaka2, Tadashi Takamasu2, Kanji Takehana2, Hitoshi Tampo1, Keigo Maejima1, Shogo Ishizuka1, Akimasa Yamada1, Shigeru Niki1
|
| 14 | Decay profile of exciton-exciton scattering in ZnO thin films | Dept. Mat. Life Sci., Osaka Univ. 1, VBL, CASI, Osaka Univ. 2, Dept. of Phys. Sci., Osaka Prefecture Univ. 3, Dept. Appl. Phys., Osaka City Univ. 4@*Wakaiki Shuji 1,Ichida Hideki 2,Mizoguchi Kohji 3,Kim DaeGwi 4,Kanematsu Yasuo 1,2,Nakayama Masaaki 4 |
| ’ | 15 | Analysis based on exciton model on optical properties of Zn(Mg,Cd)O alloys | Graduate School of Sci. and Tech., Shizuoka Univ. 1, Res. Inst. of Electronics, Shizuoka Univ. 2@*Yamamoto Kenji 1, Nakamura Atsushi 2, Temmyo Jiro 1,2 |
| 16 | Dynamics of optical response of metal/CdZnO quantum well heterointerfaces | Univ. of Tokyo 1@*Matsui Hiroaki 1, Nomura Wataru 1, Yatsui Takashi 1, Ohtsu Motoichi 1, Tabata Hitoshi 1 |