| 6 Thin Films and Surfaces |
| 6.1 Ferroelectric Films |
| March 30 9:00`18:00 |
| 30a-ZH-@/ II |
|
1 |
Analysis of x-ray photoelectron spectra of SBT thin films |
NTT MI Lab. 1, NTT-AT 2@Akazawa Housei 1, Ando Hiroshi 2 |
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2 |
Effects of Crystal Structure on Bi4Ti3O12 Thin Film Characteristics |
Shibaura Inst. of Tech. 1@*Yamaguchi Masaki 1, Oba Tomohiro 1 |
|
3 |
Preferred orientation of Bi4-xLaxTi3O12 Thin Film on Si substrate |
Fukuoka Univ. 1, SAGA-LS 2, SPring-8/JASRI 3@Atsushi Kohno 1, Takayuki Tajiri 1, Kazushi Sumitani 2, Rie Haruki 3 |
|
4 |
Preparation and properties of (Bi,Na)TiO3 thin films by chemical solution deposition |
Shonan Inst. Tech. 1, Nagoya Univ.@*Hiroshi Maiwa 1, Kogure Tomonori 1, Sakamoto Wataru 2, Hayashi Takashi 1 |
|
5 |
Property, crystal structure and ferroelectric performance of (Bi,RE)4(Ti,Mo,Si)3O12(RE=La,Nd) ferroelectric materials |
Tokyo Univ. of Science 1@*Iiyama Takashi 1, Kitamura Naoto 1, Idemoto Yasushi 1 |
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Break 10:15`10:30 |
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6 |
An electric-field-induced strain in poly-BiFeO3 films measured by time-resolved XRD using synchrotron radiation |
Osaka Univ. 1, JASRI/SPring-8 2, JST-CREST 3, Tokyo Inst. Tech. 4@*Nakashima Seiji 1, Sakata Osami 2,3 Park Jung Min 1, Gotoda Fumiya 1, Kanashima Takeshi 1, Funakubo Hiroshi 4, Okuyama Msanori 1 |
|
7 |
Piezoelectric displacement of BiFeO3 measured with twin laser Doppler vibrometer at liquid nitrogen temperature |
National Institute of Advanced Industrial Science and Technology (AIST) 1, Tokyo University of Science 2, Tohoku University 3@*Bong-Yeon Lee 1, Takashi Iijima 1, Hiromi Shima 2, Hiroshi Naganuma 3, Takashi Nakajima 2 and Soichiro Okamura 2 |
|
8 |
Reduction of droplet on pulsed laser deposited BiFeO3 thin films |
Osaka Prefecture Univ. 1@*Ujimoto Katsuya 1, Yoshimura Takeshi 1, Fujimura Norifumi 1 |
|
9 |
Epitaxial growth and their electrical properties of (001), (101) and (111) oriented BiFeO3 thin films on Si substrate |
Tokyo Tech. 1, Shizuoka Univ. 2, Tohoku Univ. 3@*HyunYoung Go1, Naoki Wakiya2, Takanori Kiguchi 3, Jeffrey S. Cross 1, Osamu Sakurai 1, Tomohiko Yoshioka 1, Junzo Tanaka 1, Kazuo Shinozaki 1 |
| ’ |
10 |
Influence of La Content of La-doped SrTiO3 Substrates on the Crystal Structure and the Electric Properties of Epitaxial BiFeO3 Thin Films |
Tokyo University of Science 1, Tohoku University 2@*Sone Keita 1, Naganuma Hiroshi 2, Nakajima Takashi 1, Okamura Soichiro 1 |
| £ |
11 |
Large Remanent Polarization Obtained in Sm-Substituted BiFeO3 Films Formed by Chemical Solution Deposition |
Tokyo Tech 1, Fujitsu Labs. 2@*ZHONG Zhiyong 1,SUGIYAMA Yoshihiro 2, ISHIWARA Hiroshi 1 |
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Lunch 12:00`13:00 |
|
| 30p-ZH-@/ II |
| ’ |
1 |
Ferroelectric and leakage properties of Mn and Ti co-doped BiFeO3 thin films |
Fac. of Eng. Kanazawa Univ. 1,School of Natural Sci. & Tech. Kanazawa Univ. 2,Ishikawa National College of Technology 3,Tokyo University of Science 4@*Terauchi yuki 1,Tsuda Hisashi 2,Kawae Takeshi 2,Nakajima Takashi 4,Yamada Satoru 3,Okamura Soichiro 4,Morimoto Akiharu 2 |
|
2 |
Fabrication and characterization of Pr and Mn co-doped BiFeO3 thin films |
Grad. School of Natural Sci. & Tech. Kanazawa Univ. 1, Fac. of Eng. Kanazawa Univ. 2, Ishikawa National College of Technology 3@*Kawae Takeshi 1, Terauchi Yuki 2, Tsuda Hisashi1, Yamada Satoru3, Morimoto Akiharu 1 |
|
3 |
Improvement in the Electrical Properties of Multiferroic BiFeO3 Thin Films by Co-doping of Cu and Mn |
Tokyo Univ. of Science1, Tohoku Univ.2@Okamura Soichiro1, Inoue Yosuke1, Ohkubo Tomosato1, Naganuma Hiroshi2, Miyazaki Takamichi2, Nakajima Takashi1 |
|
4 |
Ferromagnetic property of Sr and Zn co-substituted BiFeO3 thim films |
Osaka Univ@*Park Jung Min, Nakashima Seiji, Gotoda Fumiya, Kanashima Takeshi, Okuyama Masanori |
|
5 |
Characteristics of Bi1.1Fe0.95Mn0.05Ox films sputter-deposited on bottom SrRuO3/Pt(111) and Pt(111) electrodes |
Tokyo Institute of Technology, Fujitsu Laboratory@*Kim Jeong Hwan 1, Hiroshi Funakubo 1, Sugiyama Yoshihiro 2, Hiroshi Ishiwara 1 |
|
6 |
Photoluminescence property of Er-doped BiFeO3 thin film |
Grad. School of Natural Sci. & Tech. Kanazawa Univ. 1,Fac. of Eng. Kanazawa Univ. 2@*Yamamura Ryusuke 1,Hori Yuji 2,Kawae Takeshi 1,Morimoto Akiharu 1 |
| ’ |
7 |
Evaluation of the Optical Property of Multiferroic BiMnO3 Thin Films |
Tokyo University of Science@*Murakami Yusuke ,Harima Tetsuro ,Shima Hiromi ,Nakajima Takashi,Okamura Soichiro |
|
8 |
Leakage current properties of BiFeO3-PbTiO3 thin films fabricated by chemical solution deposition |
ESI Nagoya Univ. 1@*Sakamoto Wataru 1, Iwata Asaki 1, Moriya Makoto 1, Yogo Toshinobu 1 |
|
9 |
Crystal Structure and Electrical Property of (1-x)BiFeO3-xBiCoO3 Thin Films Prepared by Chemical Solution Deposition |
ICR Kyoto Univ. 1, AIST 2@*Yoshitaka Nakamura 1CMasanori Kawai 1, Masaki Azuma 1, Yuichi Shimakawa 1, Bong Yeon Lee 2, Takashi Iijima 2 |
|
10 |
Magnetic properties of epitaxial Bi1-XBaXFeO3 thin films for spin-filter |
Nagoya University@*Kobayashi Satoru 1, Tachiki Shoji 1, Yoshimoto Kosuke 1, Sugimoto Yasunori 1, Takeda Yoichi 1, Asano Hidehumi 1 |
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Break 15:30`15:45 |
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| ’ |
11 |
Growth and Characterization of Bi(Zn1/2Ti1/2)O3–Based Ferroelectric Films |
Tokyo Tech.1, Sophia Univ.2, Tokyo Univ. Sci.3, AIST4@*Keisuke Yazawa1, Sintaro Yasui1, Masaaki Matsushima1, Hiroshi Uchida2, Souichiro Okamura3, Takashi Iijima4, Hiroshi Funakubo1 |
|
12 |
Core-Shell Structure of Ferroelectric (Ba0.94Ca0.06)TiO3 Grain |
Shimane Univ. 1,Hiroshima Univ. 2@*Iwahori Yoshihiro 1,Tanaka Hiroshi 1,Terado Yoshihiro 2,Moriyoshi Chikako 2,Kuroiwa Yoshihiro 2 |
|
13 |
Effective@Hamiltonian Approach to Studying the Field-Induced Structural Phase Transition of BaTiO\_{3}\ |
FUJIFILM@Corp.@Yukihiro Okuno 1, Yukio Sakashita 1 |
|
14 |
Antiferrodistortive/Ferroelectric Phase Transitions in In-plane Compressed SrTiO3 Films |
Tokyo Tech. 1, EPFL 2, IMR-Tohoku Univ. 3, CINTS-Tohoku Univ. 4, RIKEN 5, JASRI 6, AIST 7, Bruker AXS 8@*Tomoaki Yamada 1, Alexander Tagantsev 2, Takanori Kiguchi 3,4, Hiroyuki Ohsumi 5, Shigeru Kimura 6, Takashi Iijima 7, Hitoshi Morioka 8, Hiroshi Funakubo 1
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15 |
Histeresis in C-V curves for (Ba0.6Sr0.4)TiO3 thick films caused by strained hetero-structureiIIj |
Grad. School of Natural Sci. & Tech. Kanazawa Univ 1, Fac. of Eng. Kanazawa Univ 2, Taiyou Yuden Co.,Ltd. 3@*Fukuda Yuji 1, Munetomo Kenshiro 2, Morito Kentaro 3, Kawae Takeshi 1, Morimoto Akiharu 1 |
| ’ |
16 |
Fabrication and the Electric Properties of (Bax,Sr1-x)Ta2O6 Thin Films by using MOD Method |
NAIST 1@*Lu Li 1, Echizen Masahiro 1, Uchiyama Kiyoshi 1, Shiosaki Tadashi 1 |
| ’ |
17 |
Characteristics of Nb2O5 thin films for gigabit DRAM capacitor. |
Hiroshima Univ@*Yamato Masaki, Hara Hikaru, Kikkawa Takamaro |
| ’ |
18 |
Study of dielectric tunable property of pyrochlore Bi1.5Zn1.0Nb1.5O7 thin films |
Tokyo Inst Tech 1, NIMS 2, NDA 3@Nakajima Mitsumasa 1, Ikariyama Rikyu 1, Kamo Takafumi 1, Yamada Tomoaki 1, Osada Minoru 2, Nishida Ken 3, Yamamoto Takashi 3, Funakubo Hiroshi 1 |
|
19 |
High frequency tunable characteristics of CPW structure with RF-sputtered BST thin film on MgO substrate |
Kyoto Inst. Tech.1, Tokyo Inst. Tech.2, Osaka Univ.3 @T. Torii1, T. Kamo2, K. Seki1, T.Yamada2, H. Funakubo2, M. Okuyama3, M. Noda1,3 |
| 6.1 Ferroelectric Films |
| March 31 9:00`18:45 |
| 31a-ZH-@/ II |
|
1 |
Dynamic and Static Properties on Lead-Based Relaxor Ferroelectric Materials |
Univ. Tsukuba 1, JSPS 2, Hiroshima Univ. 3@*Tsukada Shinya 12, Terado Yoshihiro 3, Moriyoshi Chikako 3, Kuroiwa Yoshihiro 3, Kojima Seiji 1 |
|
2 |
Si substrate induced stress impact on ferroelectricity of PNZT capacitors and suspended membranes |
Tokyo Tech, Radiant Tech. Inc., Bruker AXS K.K.@J.S. Cross 1, J.T. Evans 2, C. Montross 2, G. Salazar 2, Saito Keisuke 3, Morioka Hitoshi 3, Shinozaki Kazuo 1, Yoshioka Tomohiko 1, Tanaka Junzo 1 |
| ’ |
3 |
In-situ observation of piezoelectric microcantilever by XRD2 |
Bruker AXS 1, Tokyo Tech. 2, AIST 3@Hitoshi Morioka 1,2, Keisuke Saito 1, Takeshi Kobayashi 3, Toshiyuki Kurosawa 1, Hiroshi Funakubo 2 |
|
4 |
In-situ observation of Pb(Zr, Ti)O3 cantilever operatin by micro - Raman spectroscopy |
Kochi Univ. of Tech 1, AIST 2, Bruker AXS 3, Tokyo Insto of Tech 4, Nat. Def Acad 5@*Nishide Masamichi 1, Kuzuhara Maresuke 1, Kobayashi Takeshi 2, Morioka Hitoshi 3, Funakubo Hiroshi 4, Yamamoto Takashi 5, Nishida Ken 5, Katoda Takashi 1 |
| ’ |
5 |
Piezoelectric Property Analysis Measured by Synchrotron X-ray Diffraction Using Epitaxial Piezoelectric Oxide Films |
Tokyo Tech. 1, Bruker AXS 2, Nat. Def. Acad. 3, JASRI/SPring-8 4, JST-CREST 5@Shintaro Yasui 1, Takashi Fujisawa 1, Takafumi Kamo 1, Mitsumasa Nakajima 1, Satoru Utsugi 1, Keisuke Yazawa 1, Tomoaki Yamada 1, Hitoshi Morioka 1,2, Ken Nishida 3, Takashi Yamamoto 3, Osami Sakata 4,5 and Hiroshi Funakubo 1 |
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Break 10:15`10:30 |
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6 |
IR Imaging by Si Integrated Pyroelectric IR Sensor Array using PZT Thin Films |
Toyohashi Univ. of Tech. 1, JST-CREST 2@Daisuke Akai 1, Takahiro Sugai 1, Kazuaki Sawada 1,2, Makoto Ishida 1,2 |
|
7 |
(Na,Bi)TiO3 thin films for Si integrated sensors |
Toyohashi Univ. of Tech. 1, JST-CREST 2@Kenro Kikuchi 1, *Akai Daisuke 1, Yoshita Ryoto 1, Sugai Takahiro 1, Sawada Kazuaki 1,2, Ishida Makoto 1,2 |
| ’ |
8 |
Fabrication of piezoelectric micromachined ultrasonic transducers array using epitaxial PZT thin film on Α-Al2O3/Si substrate |
Toyohashi Univ. 1, Toyohashi Univ. VBL 2, JST-CREST 3, Honda Electronics Co.,Ltd. 4@* Kanja Ikuo 1, Otonari Mikito 1, Akai Daisuke 2, Sawada Kazuaki 1,2,3, Ishida Makoto 1,3, Okada Nagaya 4, Higuchi Kazuki 4 |
|
9 |
Deposition of BaTiO3 films and their piezoelectric properties |
Kyoto Univ@*Hideyuki Imai, Keiji Morimoto, Isaku Kanno, Hidetoshi KoteraCKiyotaka Wasa |
|
10 |
Self-amplification of output voltage in piezoelectric accelerometer using PZT thin films array |
AIST 1, Univ. of Tokyo 2, JST-CREST 3@Kobayashi Takeshi 1,3, Okada Hironao 1,3, Masuda Takashi 2,3, Itoh Toshihiro 1,3 |
|
11 |
SPM Measurement of Piezoelectric Shear-mode Displacements in a Ferroelectric PZT Film |
Fujitsu Laboratories Ltd.@*Tsuyoshi Aoki 1, Shigeyoshi Umemiya 1, Masaharu Hida 1, Kazuaki Kurihara 1 |
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Lunch 12:00`13:00 |
|
| 31p-ZH-@/ II |
|
1 |
Film thickness dependency of domain structure and electrical properties in epitaxial PbTiO3 films |
Tokyo Tech. 1, Bruker AXS 2@*Satoru Utsugi 1, Takashi Fujisawa 1, Shintaro Yasui 1, Hitoshi Morioka 1,2, Mutsuo Ishikawa 1, Tomoaki Yamada 1, and Hiroshi Funakubo 1 |
| £ |
2 |
PFM study of ferroelectric domain structures of PZT ceramics and their evolution in partially-switched states |
Grad. School of Eng. Sci., Osaka Univ. 1@*Nicastro Damian 1, Ricinschi Dan 1, Okuyama Masanori 1 |
|
3 |
Deposition temperature dependence of crystallographic orientation of Ti-rich PZT thin film deposited on (111) Pt film |
Japan Advanced Institute of Science and Technology 1@*Oohigashi Atsuhito 1 , Itou Nobuaki 1 , Horita Susumu 1 |
| ’ |
4 |
Polarization switching current measurements of PbTiO3 thin films and nanoislands by AFM |
Univ.Hyogo 1@* Seioh Yoshihiro 1,Takimoto Ryosuke 1,Fujisawa Hironori 1,Shimizu Masara 1 |
| ’ |
5 |
Electrical properties of PbTiO3 thin films on SiTiO3(001) vicinal substrate |
Univ. Hyogo 1@ *Hiki Yukio 1, Fujisawa Hironori 1, Shimizu Masaru1 |
| ’ |
6 |
Fabrication of PbTiO3 Nanotubes by MOCVD |
Univ.Hyogo 1@*Kuri Ryohei 1, Fujisawa Hironori 1, Shimizu Masaru 1 |
| £ |
7 |
Multiple memory states by combinatorial pulses in ferroelectrics |
Osaka Univ. 1, Osaka Univ. 2, Osaka Univ. 3@* Ricinschi Dan 1, Yabe Kazuki 2, Okuyama Masanori 3 |
| ’ |
8 |
High Density Recording on LiTaO3 Thin Film and Reading Test |
RIEC.Tohoku Univ 1,Murata Manufacturing Co.,LTD 2@*Kimoto Yasuhiro 1,Kurihashi Yuichi 1,Hiranaga Yoshiomi 1,Cho Yasuo 1,Kadota Michio 2,Tochishita Hikari 2 |
| ’ |
9 |
R/W Tests Using HDD Type Ferroelectric Data Storage System |
RIEC. Tohoku Univ. 1, Murata Manufacturing Co., Ltd. 2@*Kurihashi Yuichi 1, Hiranaga Yoshiomi 1, Cho Yasuo 1, Kadota Michio 2, Tochisita Hikari 2 |
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10 |
Nanosized Domain Switching Under Humidity Control |
RIEC Tohoku Univ.@*Hiranaga Yoshiomi1, Cho Yasuo1 |
| ’ |
11 |
High Density Storage in Ferroelectric Recording System under Non Contact Control |
Tohoku Univ 1@*Tanaka Kenkou 1, Uda Tomoya 1, Cho Yasuo 1 |
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Break 15:45`16:00 |
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12 |
Fabrication of Oxide channel Thin Film Transistor using Bi1.5Zn1.0Nb1.5O7 Gate Insulator |
Tokyo Tech. P&ILab 1@*Kondo Yohei 1,Oiwa Tomohiro 1,Haga Kenichi 1,Tokumitsu Eisuke 1 |
|
13 |
Application of HfO2 films by UV assisted process to MFIS |
AIST 1@*Kazuyuki Suzuki 1CKazumi Kato 1 |
|
14 |
Operating characteristics of controlled polarization type ferroelectric-gate thin film transistors |
Osaka Prefecture Univ. 1@*T. Fukushima 1, T. Yoshimura 1, K. Masuko 1, K. Maeda 1, A. Ashida 1, N. Fujimura 1 |
|
15 |
Novel Nano-device using Polarization Interaction on YMnO3
/ ZnO Heterostructure II |
Osaka Pre. Univ.@*Shinya Sakamoto 1,Tadahiro Fukushima 1,Takeshi Yoshimura 1,Kazuhiro Maeda 1,Atsushi Ashida 1,Norifumi Fujimura 1 |
| ’ |
16 |
Farication of ferroelectric gate transistor with ZnO nanorods as a channel (II) |
Univ. Hyogo 1@*Noda Masaki 1, Nagaoka Takuya 1, Kuri Ryouhei 1, Fujisawa Hironori 1, Shimizu Masaru 1 |
|
17 |
Retention Characteristics of poly(vinylidene fluoride-trifluoroethylene) MFIS diodes. |
Tokyo Tech.@Joo-Won@Yoon@1. Shun-ichiro Ohmi 1. Hiroshi Ishiwara 1 |
|
18 |
Local modification of electric properties in ferroelectric VDF/TrFE copolymer thin film by an electron beam irradiation |
Tokyo Univ. of Sci. 1@*Kawakami Akihiro 1, Nakajima Takashi 1, Furukawa Takeo 1, Okamura Soichiro 1 |
| ’ |
19 |
Magnetic and dielectric properties in epitaxial thin films of spin-charge frustrated triangular lattices TmFe2O4 |
Univ. of Tokyo 1, Osaka Univ. 2@*Seki Munetoshi 1, Mikami Masateru 2, Tabata Hitoshi 1 |
|
20 |
Evaluation of Growth Process of Charge Ordering Type Ferroelectric YbFe2O4 Thin Films using Optical Emission Spectroscopy |
Osaka Prefecture Univ.@*Hirose Koji,Yoshimura Takeshi,Ashida Atsushi,Fujimura Norifumi |
|
21 |
Ferromagnetic Properties of Low temperature grown Magnetoferroelectric YbMnO3 Epitaxial Thin Films |
Graduate School of Engineering, Osaka Prefecture Univ 1@*Keisuke Fukae 1, Kazuhiro Maeda 1, Takeshi Yoshimura 1, Norifumi Fujimura 1 |
|
22 |
Polarization switching behavior of YMnO3 Thin Film at around Magnetic Phase Transition Temperature |
Osaka Prefecture Univ.1, JSPS research fellow2@* Maeda Kazuhiro 1,2 , Yoshimura Takeshi 1, Fujimura Norifumi |
| 6.2 Carbon Films |
| March 30 9:00`17:30 |
| 30a-TC-@/ II |
|
1 |
Formation of Carbon Thin Films Fabricated by Irradiation of Low-Energy Electrons on Condensed CH4 iIIj |
Univ. of Yamanashi, Clean Energy Res. Ctr. 1, Crystal Science and Tech. Res. Ctr. 2, Miyatsu Co., Ltd. 3@Sato Tetsuya 1, Yuji Igusa 1, Ito Yusuke 1, Kobayashi Kazuaki 1, Arai Tetsuji 1, Nakagawa Kiyokazu 2, Sato Shouji 3 |
|
2 |
Development of Ultra-thin Amorphous Carbon Films with Toughness being Able to Withstand Atmospheric Pressure |
Grad. Sch. Eng. Nagoya Univ. 1, JST-PRESTO 2, EcoTopia Sci. Inst. Nagoya Univ. 3, Kinki Univ. 4@*Kawasaki Tadahiro 1,2, Tanji Takayoshi 3, Tsutsui Hidenori 4, Matsutani Takaomi 4 |
|
3 |
Formation of Amorphous Carbon Films for Field Emission Devices Using Supermagnetron Sputter (II) |
Shizuoka Univ., Res. Inst. Elect. 1@*Kinoshita Haruhisa 1, Kubota Masaya 1, Ohno Genji 1 |
|
4 |
DLC film deposition for metallic materials by RF plasma CVD method. |
Tokyo Denki Univ. School of Science and Engineering 1,Tokyo Denki Univ. School of Engineering 2@*Kanai Taichi 1,Ohgoe Yasuharu 1,Hirakuri Kenji 2,Fukui Yasuhiro 1 |
|
5 |
Preparation of Carbon Films from Carbon Particles synthesized in CVD process |
National Defense Academy 1@*Masami Aono 1, Yusaku Kariya 1, Shunsuke Kikuchi 1, Nobuaki Kitazawa 1, and Yoshihisa Watanabe 1 |
|
6 |
Effect of hydrogen addition on growth rate and hardness of DLC films in pulse plasma CVD method |
Panasonic Electric Works 1, Nagoya Univ. 2@*Fujimoto Shinji 1,2, Ohtake Naoto 2, Takai Osamu 2 |
| |
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Break 10:30`10:45 |
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7 |
Modification of Hydrogenated DLC Thin film by the Irradiation of Soft X-ray |
Univ. of Hyogo 1, Nagaoka Univ. of Technology 2 @*Kazuhiro Kanda 1, Hiroki Akasaka 2, Hidetoshi Saitoh 2 and Shinji Matsui 1 |
|
8 |
Fabrication of nitrogen doped a-C:H films on 3-dimensinal objects |
Denki Univ.1,Denki Univ.2@*Toriu Atsuko 1,Matsuo Haruki 1,Kanasugi Kazuya 1,Ohgoe Yasuharu 1,Hirakuri Kenji 2,Fukui Yasuharu 1 |
| ’ |
9 |
Protein adsorption evaluation on hydrogenated amorphous carbon films |
Nagaoka Univ. Tech. 1@Gawazawa Naoki 1,Ohshio Shigeo 1,*Akasaka Hiroki 1,Saitoh Hidetoshi 1 |
| ’ |
10 |
Antibacterial effect on diamond-like carbon coating |
Graduate School of Science and Engineering, Tokyo Denki Univ. 1, Sankyo Seisakusho Limited 2@*Kitahara Naoki 1, Sato Tomokazu 1, Isogawa Hiroshi 2, Ogoe Yasuharu 1, Masuko Sadaaki 2, Shizuku Fukuo 2, Shimamura Tikara 2, Hirakuri Kenji 1 |
|
11 |
Cytocompatibility of APS-modified DLC film by silane coupling agent |
Tokyo Denki Univ. Science and Engineering 1,Tokyo Denki Univ. Engineering 2@*Hoshino Yuta 1,Matsuo Haruki 1,Kanasugi Kazuya 1,Ohgoe Yasuharu 1,Hirakuri Kenji 2,Hukui Yasuhiro 1 |
| |
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Lunch 12:00`13:00 |
|
| 30p-TC-@/ II |
|
1 |
TEM observation of various types of DLC films prepared by T-shape filtered-arc-deposition |
Toyohashi Univ. Technol. 1, Itoh Optical Industrial Co., Ltd. 2, Onward Ceramic Coating Co., Ltd. 3, Kanagawa Indust. Technol. R. C. 4, Hitachi Tool Eng., Ltd. 5, Indust. Inst. of Ishikawa 6@*Tanoue Hideto 1, Kamiya Masao 1, 2, Oke Shinichiro 1, Suda Yoshiyuki 1, Takikawa Hirofumi 1, Taki Makoto 3, Hasegawa Yushi 3, Kumagai Masao 4, Kano Makoto 4, Ishikawa Takeshi 5, Yasui Haruyuki 6 |
|
2 |
Removal of DLC film by using oxygen plasma beam generated in filtered arc |
Toyohashi Univ. Technol. 1, Itoh Optical Industrial Co., Ltd. 2, Onward Ceramic Coating Co., Ltd. 3, Hitachi Tool Eng., Ltd. 4, Indust. Inst. of Ishikawa 5@*Tanoue Hideto 1, Kamiya Masao 1, 2, Oke Shinichiro 1, Suda Yoshiyuki 1, Takikawa Hirofumi 1, Taki Makoto 3, Hasegawa Yushi 3, Ishikawa Takeshi 4, Yasui Haruyuki 5 |
| ’ |
3 |
Dry etching properties of Methyl-BCN film with C4F8 gas for Cu/Low-K interconnection |
Osaka Univ. 1@*Hara Makoto 1, Masuzumi Takuro 1, Kimura Chiharu 1, Aoki Hidemitsu 1, Sugino Takashi 1 |
| ’ |
4 |
Preparation of amorphous carbon nitride films by RF sputtering with He and N2 gases. |
Univ. of the Ryukyus@Ippei Mizuma 1, Kazuyuki Nagahama 1, Masaaki Yamazato 1, Akira Higa 1 |
|
5 |
Analysis of Decomposition Process of BrCN with Microwave Discharge Flow of Ar |
Nagaoka Univ. of Tech.@*Wada Akira 1,Araki Hitoshi 1,Haruhiko Ito 1 |
|
6 |
Sticking probability of CN radicals |
Nagaoka Univ. of Tech.@*Araki Hitoshi 1, Wada Akira 1, Saito Hidetoshi 1, Ito Haruhiko 1 |
|
7 |
Effect of deposition pressure on the growth of deep UV luminous hexagonal boron nitride by thermal CVD |
Nat. Inst. for Materials Science@* Tsuda Osamu 1, Taniguchi Takashi 1, Watanabe Kenji 1 |
| ’ |
8 |
Study of surface wettability on Methyl-BCN films |
Osaka Univ. 1@*Masuzumi Takuro 1, Hara Makoto 1, Kimura Chiharu 1, Aoki Hidemitsu 1, Sugino Takashi 1 |
| |
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Break 15:00`15:15 |
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9 |
Determination of hydrogen content in DLC films by neutron reflectivity |
Ibaraki Univ. 1, Nagaoka Univ. 2, JAEA 3, Tokyo Denki Univ. 4, NANOTEC CORP. 5@*Isao Nagashima 1, Kazuhide Ozeki 1, Hidetoshi Saitoh 2, Masayasu Takeda 3, Yasuharu Ohgoe 4, Kenji Hirakuri 4, Masao Yonemura 1, Toru Masuzawa 1, Akira Nishiguchi 5 |
|
10 |
Raman Spectroscopy of DLC Thin Films Using Molecular Sensor with Plasmon Antenna |
BME Waseda Univ. 1, NTRC Waseda Univ. 2, Graduate School of Sci. & Eng.TIT 3, Faculty of Sci. & Tech. Waseda Univ. 4, Graduate School of Eng. Nagoya Univ. 5@*Masahiro Yanagisawa 1, Naonobu Shimamoto 2, Toshiyuki Aida 1, Mikiko Saito 2, Kunio Kato 2, Masaki Suzuki 3, Tetsuya Osaka 4, Naoto Ohtake 5 |
| ’ |
11 |
FT-IR Analysis of C-H Bonds of Diamond-like Carbon Films |
Hiroshima Univ.@*Motoyama Hiroaki 1,Takabayashi Susumu 1,Sakaue Hiroyuki 1,Suzuki Hitoshi 1,Takahagi Takayuki 1 |
|
12 |
XPS Analysis of the Surface Chemical Structure of Diamondlike Carbon (I): the Gas-phase Chemical Modification |
Graduate School of AdSM, Hiroshima Univ. 1, Toyo Advanced Technologies 2@Takabayashi Susumu 1, Okamoto Keishi 1,2, Motoyama Hiroaki 1, Nakatani Tatsuyuki 2, Sakaue Hiroyuki 1, Takahagi Takayuki 1 |
| ’ |
13 |
XPS Analysis of the Surface Chemical Structure of Diamondlike Carbon (II): the Differece Spectrum |
Graduate School of AdSM, Hiroshima Univ. 1, Toyo Advanced Technologies 2
@Takabayashi Susumu 1, Okamoto Keishi 1,2, Motoyama Hiroaki 1, Nakatani Tatsuyuki 2, Sakaue Hiroyuki 1, Takahagi Takayuki 1
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14 |
Characterization of Si-DLC films prepared by plasma CVD using organosilanes as a silicon source |
Hirosaki Univ. 1, RIEC Tohoku Univ. 2, Nagaoka Univ. of Technol. 3, CIR Tohoku Univ. 4, Yamagata Univ. 5@*Soushi Miura 1, Hideki Nakazawa 1, Keita Nishizaki 1, Maki Suemitsu 2, Kanji Yasui 3, Takashi Itoh 4, Tetsuo Endoh 4, Yuzuru Narita 5 |
|
15 |
Effect of Substrates on Mechanical Properties of Hydrogenated Amorphous Carbon Films |
Nagaoka Univ. Tech. 1@*Itoh Hiroki 1,Ohshio Shigeo 1,Akasaka Hiroki 1,Saitoh Hidetoshi 1, |
|
16 |
Tribological properties of composites with DLC powder |
AIST 1@*Ohana Tsuguyori 1, Nakamura Takako 1, Tanaka Akihiro 1 |
| ’ |
17 |
Iodine doping of a-C:H films prepared by RF sputtering(v) |
Univ. of the Ryukyus@*Tonoe Haruki 1, Masuda Yukihisa 1, Yamazato Masaaki 1, Higa Akira 1, |
| 6.2 Carbon Films |
| March 31 9:30`17:30 |
| 31a-TC-@/ II |
| £ |
1 |
Hybrid density functional study of chiral SiC nanotubes |
Kyoto Univ. 1, PESEC 2@*Alfieri Giovanni 1, Kimoto Tsunenobu 1,2 |
| ’ |
2 |
Formation of carbon nanotube by means of pulsed discharge plasma CVD using catalyst |
Chubu Univ. Fac of Eng.@*Masahiro Matsushima 1, Sadahito Fuzimura 2, Golap kalita 3, Mikio Noda 4, Hideo Uchida5, Masayoshi Umeno 6 |
|
3 |
Nanostructure and photoconductivity of carbon film deposited by pulsed discharge plasma CVD using Ni catalyst |
Chubu Univ. 1@*Noda Mikio 1, Hujimura Sadahito 1, Matsushima Masahiro 1, Golap Kalita 1, Uchida Hideo 1, Umeno Masayoshi 1 |
|
4 |
Preparation of carbon nanoflakes by sputtering method |
Nagoya Institute of Technology 1@Hirase Yuji 1,Takeuchi Hiroki 1,Ono Shingo 1,*Ichikawa Yo 1 |
| |
|
Break 10:30`10:45 |
|
| ’ |
5 |
Ab-initio simulations of non-sp3 bonded region of nanocrystalline diamond and its elastic property |
Osaka Univ. 1@*Kenichi Tanigaki 1, Hiroshi Tanei 1, Koichi Kusakabe 1, Hirotsugu Ogi 1, Nobutomo Nakamura 1, Masahiko Hirao 1 |
| ’ |
6 |
Consideration of formation of ultrananocrystalline diamond in pulsed laser deposition |
Dept. of Appl. Sci. for Electr. & Mater., Kyushu Univ. 1,
Dept. of Aero. & Astro., Kyushu Univ. 2@*Hanada Kenji 1, Nishiyama Takashi 2, Yoshitake Tsuyoshi 1, Nagayama Kunihito 2 |
| ’ |
7 |
Fabrication of p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films by pulsed laser deposition |
Kyushu Univ.1, Ariake National College Tech.2, SAGA-LS3 @*Shinya Ohmagari1, Tsuyoshi Yoshitake1, Akira Nagano1, Takeshi Hara2, Ryota Ohtani3, Hiroyuki Setoyama3, Eiichi Kobayashi3, and Kunihito Nagayama1 |
|
8 |
Growth of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films using a coaxial arc plasma gun |
Kyushu Univ. 1 5, SAGA Light Source 2, ULVAC 3, ULVAC-RIKO 4@*Tsuyoshi Yoshitake 1, You Nakagawa 1, Kenji Hanada 1, Akira Nagano 1,
Ryota Ohtani 2, Hiroyuki Setoyama 2, Eiichi Kobayashi 2, Kazushi Sumitani 2,
Toshihiro Okajima 2, Masaaki Hirakawa 3, Kouichi Yamaguchi 3,
Naoki Tsukahara 3, Yoshiaki Agawa 4, Kunihito Nagayama 5
|
|
9 |
Carbonization on the surface of Si substrate and nucleation of diamond by Hot Filament CVD method |
Tokai Univ. 1@*Takeyuki Togashi 1, Kenichi Haruta 1, Hideki Kimura 1, Tateki Kurosu 1 |
| |
|
Lunch 12:00`13:00 |
|
| 31p-TC-@/ II |
|
1 |
Characterization of Diamond (001) Vicinal Films Homoepitaxially Grown Using High-Power Microwave Plasma CVD |
Graduate School of Eng., Osaka Univ.1@Kawashima Shinya 1,*Maida Osamu 1,Ito Toshimichi 1 |
|
2 |
Self-Standing High-Quality Diamond Single-Crystalline Films Grown Using High-Power MWCVD Method |
Graduate School of Eng., Osaka Univ. 1@*Iguchi Shota 1,Maida Osamu 1,Ito Toshimichi 1 |
|
3 |
Production of free-standing half-inch single crystal CVD diamond plates |
AIST@*Mokuno Yoshiaki, Chayahara Akiyoshi, Yamada Hideaki, Tsubouchi Nobuteru |
|
4 |
Epitaxial lateral overgrowth of diamond thin films |
NTT Basic Research Labs. 1, Univ. Paris 2@Akasaka Tetsuya 1, Achard Jocelyn 2, Kasu Makoto 1 |
|
5 |
Nitrogen-doped diamond (100) thick-films grown using microwave-plasma chemical vapor deposition method |
Osaka Univ. 1, @*Sunada yasuhide 1, Maida Osamu 2,Ito Toshimichi, |
|
6 |
Growth and Characterization of Heavily-Phosphorus-Doped Homoepitaxial CVD Diamond (100) Films |
Graduate School of Engineering, Osaka University 1, Nittodenko Inst. 2@*Hidaka Teruhiro 1, Nakai Takahiro 2, Maida Osamu 1, Ito Toshimichi 1 |
|
7 |
Heavily phosphorus doping on (001) n-type diamond using selective growth technique |
AIST 1, Univ. of Tsukuba 2@Hiromitsu Kato 1, Toshiharu Makino 1, Masahiko Ogura 1, Hideyo Okushi 1, Satoshi Yamasaki 1,2 |
|
8 |
Heavily-B-Doped Homoepitaxial Diamond Films Grown Using High-Power-Density Microwave-Plasma CVD Method |
Graduate School of Eng., Osaka Univ.1@*Minokoshi Yusuke 1,Maida Osamu 1,Ito Toshimichi |
| £ |
9 |
Characterization of structural defects in heavily boron-doped homoepitaxial diamond |
DRC AIST@Somu Kumaragurubaran 1, Hitoshi Umezawa 1, Shin-ichi Shikata 1 |
| |
|
Break 15:15`15:30 |
|
| ’ |
10 |
Growth of B doped heteroepitaxial diamond by dc plasma chemical vapor deposition and itfs electric characterization |
Aoyama Gakuin Univ. 1, TOPLAS ENGINEERING CO., LTD 2 @*Kota Yamasaki 1, Seiji Mita 1, Hiroshi kunihisa 1, Kazuhiro Suzuki 2,
Atsuhito Sawabe 1 |
| ’ |
11 |
Coalescence via lateral growth in line-designed heteroepitaxial diamonds |
Aoyama Gakuin Univ. 1, TOPLAS ENGINEERING CO.,LTD 2@*Shun Washiyama 1, Takashi Kamano 1, Seiji Mita1 1, Kazuhiro Suzuki 2, Atsuhito Sawabe 1 |
| ’ |
12 |
Glowth of epitaxial diamond thin film on iridium / sapphire substrate |
Aoyama Gakuin Univ. 1, TOPLAS ENGINEERING 2, NAMIKI PRECISION JEWEL 3@*Daisuke Kumaki 1, Mita Seiji 1, Suzuki Kazuhiro 2, Kotaki Toshiro 3, Sawabe Atsuhito 1 |
|
13 |
Growth of AlN on diamond substrate by MOVPE |
ICYS/NIMS 1, NICe/NIMS 2, SenMC/NIMS 3, Meijo Univ. 4@*Masataka Imura 1, Kiyomi Nakajima 2, Meiyong Liao 3, Yasuo Koide 2,3, and Hiroshi Amano 4 |
| £’ |
14 |
Investigation of barrier layer between H-induced channel and gate contact in diamond FETs |
NTT Basic Research Labs 1@*Michal Kubovic 1, Yoshiharu Yamauchi 1, Makoto Kasu 1 |
| ’ |
15 |
Characterization of diamond MOSFETs fabricated on H-terminated IIa-type (111) diamond substrate |
Waseda Univ. 1,AIST 2@*Kyosuke Tsuge 1, Kazuyuki Hirama 1,Yoshikatsu Jingu 1, Masaru Ichikawa 1, Tetsuya Tsuno 1,Hitoshi Umezawa 2, Hiroshi Kawarada 1 |
| ’ |
16 |
Bottom contact type H-terminated diamond MOSFETs with B-doped layer |
Waseda Univ. 1,AIST 2@*Tetsuya Tsuno 1,Yoshikatsu Jingu 1,Kazuyuki Hirama 1,Masaru Ichikawa 1, Kyosuke Tsuge 1,Hitoshi Umezawa 2,Hiroshi Kawarada 1
|
|
17 |
Role of H-termination for the Schottky junctions on diamond (100) surface |
NTT Basic Research Labs. 1@* Kageshima Hiroyuki 1, Kasu Makoto 1 |
| 6.2 Carbon Films |
| April 1 9:30`17:00 |
| 1a-TC-@/ II |
|
1 |
Characteristic Energy Band Values and Photo-Electron Attenuation Length of a CVD Diamond (001)2x1 Surface |
IMRAM Tohoku Univ. 1@*Kono Shozo 1,Saito Touru 1,Kawata Hiroshi 1, Goto Tadahiko 1,Kakefuda Youhei 1,Komeda Tadahiro 1 |
|
2 |
Photoluminescence spectrum from electron-hole plasma in diamond |
Nihon U. 1, AIST 2@Sakamoto Yoshihiro 1, Murayama Kazuro 1, Okushi Hideyo 2 |
|
3 |
Cathodoluminescence of isotope diamond by carbon isotopes 12C and 13C (III) |
AIST DiaRC 1, AIST ESERL 2@Hideyuki Watanabe 1, Shinichi Nakashima 2, Shinichi Shikata 1 |
|
4 |
Control of Long-Distance Carrier Diffusion from Homoepitaxial CVD Diamond Layer to its Underlying HPHT Substrate
|
Graduate School of Eng., Osaka Univ. 1@Masamuki Kanasugi 1,*Osamu Maida 1,Toshimichi Ito 1 |
| |
|
Break 10:30`10:45 |
|
|
5 |
Evaluation of diamond sensors for personal dosimeters using a Monte Carlo simulation method |
Osaka Univ. 1, Aloka 2, @*Sato Hidenori 1,2, Maida Osamu 1, Ito Toshimichi 1 |
| ’ |
6 |
Fabrication of heteroepitaxial diamond radiation detectors
|
Aoyama Gakuin Univ. 1, TOPLAS ENGINEERING CO.,LTD 2@*Masahiro Hitaka 1, Seiji Mita 1, Satoshi Nakahira 1, Toru Kojima 1,
Kazuki Yamaoka 1, Kazuhiro Suzuki 2, Atsumasa Yoshida 1, Atsuhito Sawabe 1
|
| £ |
7 |
Light intensity induced photocurrent gain in diamond photodetector |
National Institute for Materials Science (NIMS)@Meiyong Liao, Xi Wang, Tokuyuki Teraji, Masataka Imura, Yasuo Koide |
|
8 |
Mechanism of persistent photoconductivity and photoconductivity gain for diamond ultraviolet photosensor, I |
NIMS 1, CNRS/LGEP 2@Koide Yasuo 1, Liao Meiyong 1, Imura Masataka 1, Alvarez Jose 2, Kleider JeanPaul 2 |
|
9 |
Detection sensitivity of electrochemical DNA sensor from diamond |
Diamond Research Center AIST 1, IAF 2@Uetsuka Hiroshi 1, Yang Nianjun 2, Nebel Christoph 2, Fujimori Naoji 1 |
| |
|
Lunch 12:00`13:00 |
|
| 1p-TC-@/ II |
|
1 |
Ohmic contact for boron-doped p-type diamond without postannealing |
NIMS 1@TERAJI Tokuyuki 1, KOIZUMI Satoshi 1, KOIDE Yasuo 1 |
|
2 |
Low-leakage p-diamond Schottky diodes with lateral configuration |
NIMS 1, Osaka Univ. 2@Tokuyuki TERAJI 1, Yiuri GARINO 1, Yasuo KOIDE 1, Toshimichi ITO 2 |
|
3 |
Characterization of SBDs on 12mm single crystal diamond film fabricated by gDirect Wafer Methodh. |
DRC/AIST 1,@Hitoshi Umezawa 1. Yoshiaki Mokuno 1. Hideaki Yamada 1. Akiyoshi Chayahara 1. Shin-ichi Shikata 1 |
|
4 |
Long-term stability of Ru/diamond pVSBDs at high temperature condition. |
DRC/AIST 1@Hitoshi Umezawa 1. Kazuhiro Ikeda 1. Ramanujam Kumaresan 1. Shin-ichi Shikata 1 |
| £ |
5 |
Experimental and simulation analysis of parasitic resistance from CVD grown p+ layer of diamond pVSBD |
DRC, AIST 1@Ramanujam Kumaresan 1. Hitoshi Umezawa 1. Shin-ichi Shikata 1 |
|
6 |
Structural analysis for Ti/Pt/Au electrodes in diamond devices stored at High Temperature |
NRC, Nissan Motor 1, NRI, AIST 2@Satoshi Tanimoto 1, Norihiko Kiritani 1, Toshiharu Makino 2, Masao Ogura 2, Norio Tokuda 2, Hiromitsu Kato 2, Hideyo Okushi 2, Satoshi Yamasaki 2 |
|
7 |
Electrical properties of diamond Schottky-pn diode |
NRI AIST 1, NRC Nissan Motor 2, ESERL AIST 3, Univ. of Tsukuba 4@Toshiharu Makino 1, Satoshi Tanimoto 2, Yusuke Hayashi 3, Hiromitsu Kato 1, Norio Tokuda 1, Masahiko Ogura 1, Daisuke Takeuchi 1, Kazuhiro Oyama 1,4, Hiromichi Ohashi 3, Hideyo Okushi 1, Satoshi Yamasaki 1,4 |
| |
|
Break 14:45`15:00 |
|
| £ |
8 |
Electrical characterization of {111}-oriented homoepitaxial diamond p-n junction |
NIMS@Yiuri Garino*, Tokuyuki Teraji and Satoshi Koizumi |
|
9 |
Current injected light emission property for (111)-oriented diamond p-i-n junctions |
AIST 1, NIMS 2, Nissan Motor 3, Univ. of Tsukuba 4@*Toshiharu Makino 1, Satoshi Koizumi 2, Kazuhiro Oyama 1,3, Hiromitsu Kato 1, Norio Tokuda 1, Masahiko Ogura 1, Satoshi Tanimoto 4, Satoshi Yamasaki 1,3, Hideyo Okushi 1 |
|
10 |
Electric properties of diamond p-n+ junction diode type electron emitters |
NRI-AIST 1, NIMS 2, Univ. of Tsukuba 3@Daisuke Takeuchi 1, Toshiharu Makino 1, Hiromitsu Kato 1, Masahiko Ogura 1, Norio Tokuda 1, Kazuhiro Oyama 1, Hideyo Okushi 1,2, Satoshi Yamasaki 1,3 |
|
11 |
Improvement of electron emission from diamond pn-junction emitter |
NIMS@*Koizumi Satoshi |
| ’ |
12 |
Electron emission properties of self-organized diamond particles |
IIS, The Univ. of Tokyo@Nose Kenji, Mitsuda Yoshitaka |
| ’ |
13 |
Film thickness dependence of Tc and cross-sectional TEM study in heavily boron-doped superconducting diamond |
Waseda Univ. 1, NIMS 2, AIST 3@*Kitagoh Shinya 1, Kawano Akihiro 1, Iriyama Shingo 1, Okada Ryosuke 1, Takano Yoshihiko 2, Umezawa Hitoshi 3, Hirama Kazuyuki 1, Chikyo@Toyohiro 1,2, Kawarada Hiroshi 1 |
| ’ |
14 |
Superconductivity of molybdenum carbide thin layer at Mo/diamond interface |
Waseda Univ. 1,NIMS 2@*Watanabe Megumi 1,Iriyama Shingo 1,Okada Ryuusuke 1,Kawano Akihiro 1,Jingu Yoshikatu 1,Hirama Kazuyuki 1,Takano Yoshihiko 2,Kawarada Hiroshi 1
|
|
15 |
Fabrication and micropatterning of diamond superconducting thin films |
Grad. School of Natural Sci. & Tech. Kanazawa University 1, Fac. of Eng. Kanazawa University 2, NIMS 3@Kawae Takeshi 1, Yoshida Kazuhiro 1, Okuno Akinori 2, Iiyama Koichi 1, Takano Yoshihiko 3, Morimoto Akiharu 1 |
| 6.3 Oxide Electronics |
| March 30 |
| 30a-P2-@/ II |
i|X^[\¦pj
@
| |
|
Poster Session
30a-P2-1`30@9:30`11:30 |
|
1 |
Examination of ITO Thin Films with The Doped Quantity of Sn Deposited by The Bias Sputtering Method |
Niigata Univ. 1,Tokyo Polytechnic Univ. 2@*Takahashi Saki 1,Niki Masato 1,Nakamura Youhei 1,Shimizu Hidehiko 1,Iwano Haruo 1,Fukushima Yasuo 1,Nagata Koutaro 1,Hoshi Yoichi 2 |
|
2 |
Study of the InTiO/p-GaAs ohmic contact by Raman scattering |
Univ. of Electro-Communications 1@Lee Jaesung 1, Kimura Hitoshi 1, Koizumi Atsushi 1, Uchida Kazuo 1, Nozaki Shinji1 |
|
3 |
Characterization of ITO films by analyses of superconducting properties |
Oyama Nat. Coll. Technol. 1@Tateno Ryosuke 1, Nansai Kiyomi 1, Satou Tomokazu 1, Senda Masakatsu 1, Mori Natsuki 1 |
|
4 |
Thermoelectric properties in transparent-conductive indium-tin oxide system |
Oyama Nat. Coll. Technol. 1@Idebuchi Koushi 1, Maezawa Itaru 1, Kano Fumihisa 1, Senda Masakatsu 1, Mori Natuki 1 |
|
5 |
Characteristics of ZnO thin film transistor prepared by rf sputtering |
Sendai National College of Technology@*Haga Koichi, Takizawa Yoshihiro, Sakuma Mio, Seki Sigeyuki |
|
6 |
Characteristic of AZO Thin Films Deposited by Sputtering Method |
Niigata Univ. 1, Niigata Univ. 2, Niigata Univ. 3, Niigata Univ. 4, Niigata Univ. 5, Niigata Univ. 6, Tokyo Polytechnic Univ. 7,@*Sato Kaoru 1, Honma Takuya 2, Shimomura Takeharu 3, Shou Rijin 4, Shimizu Hidehiko 5, Iwano Haruo 6, Hoshi Yoichi 7 |
|
7 |
Preparation of ΐ-Ga2O3 thin films by RF magnatron sputtering method and their application for O2 sensor |
Grad. School of Eng. Shizuoka Univ. 1, Fac. of Eng. Shizuoka Univ. 2@*Kayano Shinya 2, Horiuchi Takashi 1, Isai Masaaki 1,2 |
|
8 |
Fabrication of Highly Conductive Polycrystalline Ta:SnO2 Transparent Conducting Thin Films with Seed Layer |
KAST 1, Univ. of Tokyo 2, Tohoku Univ. 3 @*Shoichiro Nakao 1,2, Taro Hitosugi 1,3, Naoomi Yamada 1, Yasushi Hirose 1,2, Toshihiro Shimada 1,2, Tetsuya Hasegawa 1,2 |
|
9 |
The hall effect measurement and photoconductivity in In2O3-ZnO polycrystalline films |
Dept. of Physics, Kyushu Univ1, Center for research and advanced Centeral Research Laboratories, Idemitu Kosan Co., Ltd.2 @*Yamada Kazumasa1, Yamaguchi Takashi1, Kokubo Nobuhito1, Shinokazi bunjyu1, Yano Kouki2, Tomai Sigekazu2, Nakamura Hiroaki2 |
|
10 |
Superconductivity and maicrosutructure of InO-ZnO thin films |
National institute material@science1, Department of Physics Kyushu Univ.2CAdvance research Lab. Idemitsu Kosan Co.,Ltd.3
@Kazumasa Makise1, Kazutaka Mitshshi1, Kazuo Furuya1, Takashi Yamaguti2 , Takashi Yamaguti2 ,Satoshi Takada2, Shunsuke Ogura2, Kazumasa Yamada2, Bunjyu Shinozaki2, , Nobuhito Kokubo3,Koki Yano4, Hiroaki Nakamura4 |
|
11 |
Transparent-Oxide-Semiconductor Based Top-Gate Self-Alignment Thin-Film Transistors |
Toyama Univ. 1@*Akira Yamagishi 1,Hiroyuki Okada 1,Shigeki Naka 1 |
|
12 |
Characteristic of transparent conductive In-Ga-Zn oxide thin film deposited on the fused quartz by PLD method |
Tokushima Univ. 1,Takuma National College of Technology 2@*Maruyama Takayuki 1,Tominaga Kikuo 1,Tsuduki Takasi 1,Mikawa Michio 2,Moriga Tosihiro 1 |
|
13 |
Current stability and characteristic analysis of a-In-Ga-Zn-O TFTs |
ERATO-SORST/JST 1, MSL/Tokyo Tech. 2, FRC/Tokyo Tech. 3 @*Kenji Nomura1, Tosho Kamiya1,2, Masahiro Hirano1,3, Hideo Hosono1,2 |
|
14 |
Annealing of Ga2O3 addition In2O3-ZnO transparent conductive oxide films |
Tokushima University@*Ueno Takahiro 1,Tominaga Kikuo 1,Sakamoto akihiko 1,Watanabe Takayuki 1,Maruo Youichi 1,Moriga Toshihiro 1,Nakabayashi Ichiro |
|
15 |
KTaO3 Perovskite Field Effect Transistor with Parylene Gate Insulator |
Univ. Tokyo 1, AIST 2, RIKEN 3@*Matsumura Ryota 1CTomita Hiroshi1,2, Inoue H Isao 2CAkimoto Hikota 3, Kono Kimitoshi 3CTakagi Hidenori 1,3 |
|
16 |
Epitaxial growth of delafossite-type transition metal oxides and their properties |
WPI-AIMR Tohoku Univ.1, JFE mineral Co., Ltd.2, IMR Tohoku Univ.3, JST-PRESTO4, JST-CREST5@Hiraga Hiroki1,Iwasaki Yosuke2,Fukumura Tomoteru3,4, Ohtomo Akira3, Makino Takayuki1, Ohkubo Akira3, Kimura Hisamichi3, Kawasaki Masashi1,3,5 |
|
17 |
The effect of Cu purity and interlayer for photovoltaic property of n-TCO/p-Cu2O Solar Cells |
Kanazawa I.T. 1@*Hara Youhei 1,Ito Tomoyuki 1,Honma Yasunori 1,Fukada Haruki 1,Miyata Toshihiro 1,Minami Tadatsugu 1 |
|
18 |
Characterization of CuInxOx Films Grown by Magnetron Sputtering Method |
Shinshu Univ.@Masataka Hagihara 1, Tsubasa Ogawa 1, Tetsuhiro Takada 1, Tomohiko Yamakami 1, Rinpei Hayashibe 1, Katsuya Abe 1 |
|
19 |
Structural and electrical properties of p-type polycrystalline and amorphous SnO semiconductor films |
Canon Inc. 1, ERATO-SORST 2, MSL Tokyo Tech. 3, FCRC Tokyo Tech. 4@Hisato Yabuta 1, Nobuyuki Kaji 1, Ryo Hayashi 1, Hideya Kumomi 1, Kenji Nomura 2, Toshio Kamiya 3, Masahiro Hirano 4, Hideo Hosono 3,4 |
|
20 |
Modulation of superconductivity in non-doped SrTiO3 single crystal with double gate configuration |
WPI-AIMR Tohoku Univ. 1,CLTS Tohoku Univ. 2,IMR Tohoku Univ. 3,CREST-JST 4
@*Ueno Kazunori 1,Nakamura Shintaro 2,Shimotani Hidekazu 3,Ohtomo Akira 3,Nojima Tsutomu 2,Kimura Noriaki 2,Aoki Haruyoshi 2,Iwasa Yoshihiro 3 4,Kawasaki Masashi 1 3 4 |
|
21 |
Fabrication and TEM observation of VO2 epitaxial films grown by excimer laser assisted metal organic deposition |
Yokohama National Univ. 1,National Inst. of Advanced Industrial Science and Technology 2 @*Nishikawa Masami 1,Nakajima Tomohiko 2,Kumagai Toshiya 2,Tsuchiya Tetsuo 2,Okutani Takeshi 1 |
|
22 |
Thickness dependent electronic structure of SrVO3 thin films studied by in situ photoemission spectroscopy |
The Univ. of Tokyo 1,2,5, JST-CREST 3, UT-SRRO 4@*Okabe Takashi 1, Yoshimatsu Kouhei 2, Kumigashira Hiroshi 1-4, Aizaki Shinichi 5, Fujimori Atsushi 5, Oshima Masaharu 1-4 |
|
23 |
Creation of bio-mimetic devices using electronically huge non-linear response of vanadium oxide |
ISIR Osaka Univ. 1@*Teruo Kanki 1, Yasushi Hotta 1, Naoki Asakawa 1, Hidekazu Tanaka 1, Tomoji Kawai 1 |
|
24 |
Electronic Structure of La0.6Sr0.4FeO3 Thin Film by Resonant Soft x-Ray Emission Spectroscopy |
Tokyo Univ.Sci 1, ALS.LBNL 2@Matsumoto Masashi 1, *Higuchi Tohru 1, Hattori Takeshi 1, Wanli Yang 2, Paul Olalde-Velasco 2, Yi-Sheng Liu 2, Jeng-Lung Chen 2, Jingha Guo 2 |
|
25 |
Effect of doughnut-type disc on properties of LiMn2O4 films prepared by RF magnetron sputtering |
Grad. School of Eng. Shizuoka Univ. 1, Fac. of Eng. Shizuoka Univ. 2@*Hosokawa Takayuki 1,Sekigawa Satoshi 2,Isai Masaaki 1,2 |
|
26 |
Y2O3 Thin Film Deposited by Two-step Process and Its Resistance to Halogen Plasma |
NIMS 1@*Masashi Ishii 1, Naoki Ikeda 1, Daijyu Tsuya 1, Kenji Sakurai 1 |
|
27 |
Field-effect transistor using electron-doped 12CaOE7Al2O3 nanowire as channel |
Materials and Structures Laboratory, Tokyo Institute of Technolgy 1,Frontier Research Center, Tokyo Institute of Technology 2,Japan Science and Technology Agency 3@Nishio Yukimasa 1,Miyakawa Masashi 2,Nomura Kenji 3,Yanagi Hiroshi 1,Kamiya Toshio 1,3,Hirano Masahiro 2,3,Hosono Hideo 1,2,3 |
|
28 |
High Resolution XPS Analysis of Density of States Ga2O33-SiO2 Interfaces |
Kagami Memorial Lab. Waseda Univ.1
Graduate School of Sci. and Eng. Waseda Univ.2@Toshio Takeuchi1, Yosuke Ichimura1,2, Yusuke Maeda1,2, Daisuke Sugimoto1,2, Jiro Nishinaga1,2, Atsushi Kawaharazuka1,2, Yoshiji Horikoshi1,2 |
|
29 |
Self-assembled stearic acid monolayer on oxide surfaces |
IMR Tohoku Univ. 1, WPI-AIMR Tohoku Univ. 2, JST-CREST 3@Ryosuke Y. Gunji 1, Hiroki Hiraga 2, Masaki Nakano 1, Akira Ohtomo 1, Takayuki Makino 2, Tomoteru Fukumura 1, Masashi Kawasaki 1,2,3 |
|
30 |
Preparation and microstructure of Mg(OH)2-TM films |
Sch. of High-Tech.1, Cou. of Sci. and Tech. 2, Tokai Univ.,@*Maizono Mikihiko 1, Hagiwara Makoto 1, Hiyoshi Syouta 1, Honjo Takamitsu 2, Chiba Masafumi 1, Kuji Toshiro 1 |
| 6.3 Oxide Electronics |
| March 31 |
| 31a-P7-@/ II |
@
| |
|
Poster Session
31a-P7-1`30@9:30`11:30 |
| ’ |
1 |
Photoconductivity and Relaxation Phenomena at LaAlO3/SrTiO3 Heterointerfaces |
The Univ. of Tokyo 1, Pusan Nat'l Univ. 2, JST 3@Minu Kim 1, Yusuke Kozuka 1, Cristopher Bell 1,3, Bog G. Kim 2, Yasuyuki Hikita 1, Harold Y. Hwang 1,3 |
| ’ |
2 |
Visible-light active photocatalytic WO3 films supported by Pt island films |
Sch. Sci. & Eng. Aoyama Gakuin Univ. 1,Cent. Instrum. Anal. Aoyama Gakuin Univ. 2@*Murata Akiyo 1,Watanabe Hiroki 1,Oka Nobuto 1,Sato Yasushi 1,Yamaguchi Hiroshi 2,Nakamura Shin-ichi 2,Shigesato Yuzo 1 |
| ’ |
3 |
SnO2 thin films fabricated by the photochemical deposition method and application for room-temperature@hydrogen sensors |
Nagoya Inst. Of Tech.Univ@@@*Aodengbaoleer 1CMasaya.Ichimura 1CMasashi.Kato 1 |
| ’ |
4 |
Preparation of truly atomically-flat TiO2(110) substrate |
Tohoku Univ. 1, Univ. of Tokyo 2@*Shimizu Ryota 1,2, Hitosugi Taro 1, Koji S Nakayama 1, Toshio Sakurai 1, Manabu Shiraiwa 2, Tetsuya Hasegawa 2 |
| £’ |
5 |
Rectifying characteristics of Pt/TiO2-x/Metal |
NRI-AIST, JST CREST@*N. Zhong, H. Shima, H. Akinaga |
| ’ |
6 |
Two kinds of interfaces in SrTiO3/LaAlO3 superlattices revealed by resonant soft x-ray scattering |
Univ. of British Columbia 1, Univ. of Tokyo 2, Univ. of Cologne 3, HZB c/o BESSY 4, NSRRC 5@*Hiroki Wadati 1, Jochen Geck 1, David G. Hawthorn 1, Takuya Higuchi 2, Masayuki Hosoda 2, Chris Bell 2, Yasuyuki Hikita 2, Harold Y. Hwang 2, Christian Schussler-Langeheine 3, Enrico Schierle 4, Hsueh-Hung Wu 3,5, Eugen Weschke 4, Shih-Wen Huang 5, Di-Jing Huang 5, Hong-Ji Lin 5, George A. Sawatzky 1 |
| ’ |
7 |
Microscopic atomic structure analysis of electron-doped Ruddlesden-Popper homologous phase thin films |
IMR Tohoku Univ. 1, WPI-AIMR Tohoku Univ. 2, Tokyo Univ. 3, Toyota Motor Corporation 4, JST-CREST 5@Masaki Okude 1, Mitsuhiro Saito 2, Susumu Tsukimoto 2, Zhongchang Wang 2, Teruyasu Mizoguchi 3, Yuichi Ikuhara 2,3, Akira Ohtomo 1, Takuji Kita 4, Masashi Kawasaki 1,2,5 |
| ’ |
8 |
Spectroscopic Analysis of Stoichiometry at Perovskite Heterointerfaces Fabricated on SrTiO3 Substrates |
Univ. of Tokyo 1, Cornell Univ. 2, Chungnam National Univ. 3, JST 4@*Takeaki Yajima 1, Lena Fitting-Kourkoutis 2, Takuya Higuchi 1,2, Jong Hyun Song 3, Yasuyuki Hikita 1, David A. Muller 2, Harold Y. Hwang 1,4 |
| ’ |
9 |
Resistance switching in submicron metal wires under oxygen atmosphere |
RIKEN 1, Univ. of Tokyo 2@Fujiwara Kohei 1, Konno Yosuke 2, Takagi Hidenori 1,2 |
| ’ |
10 |
Barrier height control by interface modulation at La$_{0.7}$Sr$_{0.3}$MnO$_{3}$/Nb:SrTiO$_{3}$ Schottky junctions |
Univ. of Tokyo 1, 2, JST 3@*Takeaki Hidaka 1, Takeaki Yajima 2, Yasuyuki Hikita 2, Harold. Y. Hwang 1,2,3 |
| ’ |
11 |
I-V hysteresis characteristics of Pr0.7Ca0.3MnO3 by in situ TEM observation |
Hokkaido Univ. 1@*Fujii Takashi 1, Kaji Hiromichi 1, Kondo Hirofumi 1, Hamada Kouichi 1, Arita Masashi 1, Takahashi Yasuo 1 |
|
12 |
Effect of tungsten oxide on ReRAM property of W/Pr0.7Ca0.3MnO3/Pt structure |
Hokkaido Univ.@*Kaji Hiromichi, Kondo Hirofumi, Fujii Takashi, Arita Masashi, Takahashi Yasuo |
| ’ |
13 |
Thermal oxidation temperature dependence of Re-RAM characteristics of NiO thin films |
Hokkaido Univ. 1@*Kondo Hirofumi 1,Kaji Hiromichi 1,Fujii Takashi 1,Takahashi Yasuo 1,Arita Masashi 1,Hamada Kouichi 1 |
|
14 |
In-situ synchrotron radiation photoemission study on Al/Pr0.7Ca0.3MnO3 interfaces showing resistance switching phenomena |
The Univ. of Tokyo 1-2, JST-CREST 3, UT-SRRO 4@*Yasuhara Ryutaro 1, Yamamoto Taiki 2, Ohkubo Isao 1-3, Kumigashira Hiroshi 1-4, Oshima Masaharu 1-4 |
| ’ |
15 |
Resistance switching effect and interfacial electronic structure at the heterojunction between Al and La0.7Ca0.3MnO3 |
The Univ. of Tokyo 1,2, JST-CREST 3, UT-SRRO 4@Yamamoto Taiki 1, Yasuhara Ryutaro 2, Ohkubo Isao 1-3, Kumigashira Hiroshi 1-4, Oshima Masaharu 1-4 |
| ’ |
16 |
Ca-doping dependence of resistive switching characteristics and band structure for Ti/Pr1-xCaxMnO3 junctions |
AIST 1@*Shutaro Asanuma 1, Akihito Sawa 1, Hiroyuki Yamada 1 |
| ’ |
17 |
Artificial metal-insulator phase separated structure in manganite superlattices |
CMRG-RIKEN 1, ERATO-JST 2, WPI-AIMR, Tohoku Univ. 3, Dept. Appl. Phys., Univ. of Tokyo 4@*Masao Nakamura 1, Daisuke Okuyama 1, Jong Seok Lee 2, Masashi Kawasaki 1,3, Yoshinori Tokura 1,2,4 |
| ’ |
18 |
Growth condition dependence of magnetic properties for La2NiMnO6epitaxial thin films |
Dept. of Appl. Chem., The Univ. of Tokyo 1, Materials and Structures Laboratory, Tokyo Inst. of Tech. 2, NIMS 3, Graduate School of Frontier Sciences, The Univ. of Tokyo 4, CREST-JST 5, SRRO, The Univ. of Tokyo 6@Kitamura Miho 1, Ohkubo Isao 1, Matsumoto Yuji 2, Koinuma Hideomi 3,4, Oshima Masaharu 1,5,6 |
| ’ |
19 |
Low-temperature-reduction processes of epitaxial LaNiO3 and PrNiO3 with CaH2 |
ICR, Kyoto Univ. 1, SPring-8/JASRI 2@*Kawai Masanori 1, Inoue Satoru 1, Ichikawa Noriya 1, Sakata Osami 2, Kimura Shigeru 2, Shimakawa Yuichi 1 |
| ’ |
20 |
Conductivity evaluation of Li-doped NiO epitaxial thin films grown by room-temperature deposition |
Tokyo Inst. Of Tech. 1, TOSHIMA manufacturing company 2@Naoki Shiraishi 1, Yushi Kato 1, Makoto Hosaka 1, Nobuo Tsuchimine 2, Mamoru Yoshimoto 1 |
| ’ |
21 |
Electrical properties of LaAlO by doping N |
Osaka Univ. 1@*Komatsu Naoyoshi 1, Honjo Masatomo 1, Kimura Chiharu 1, Aoki Hidemitsu 1, Sugino Takashi 1 |
| ’ |
22 |
Evaluation of characteristics of SrRuO3 thin film in terahertz frequency region |
Inst. of Laser Engineering Osaka Univ. 1, Nanjing Univ. 2@*Ryuhei kinjo 1, Daisuke Imatsuji 1, Iwao Kawayama 1, Hironaru Murakami 1, Caihong Zhang 2, Jian Chen 2, Masayoshi Tonouchi 1 |
| ’ |
23 |
Electric double-layer transistor with a channel of KTaO3 |
WPI-AIMR Tohoku Univ. 1,IMR Tohoku Univ. 2,CREST-JST 3@*Ueno Kazunori 1,Akatsuka Toshihiko 2, Shimotani Hidekazu 2, Yuan Hong Tao 2 3,Iwasa Yoshihiro 2 3,Kawasaki Masashi 1 2 3 |
| ’ |
24 |
Fabrication of biaxially aligned oxide thin film on amorphous substrates by using the crystalline imprint epitaxy |
Univ. of Tokyo 1, KAST 2@Yasushi Hirose 1,2, Takayuki Okumoto 1, Kenich Kimura 1, Tetsuya Hasegawa 1,2 |
| ’ |
25 |
Synthesis of Sm2Ti2O7 epitaxial thin films of layered-perovskite structure by PLD method |
Univ. of Tokyo 1, KAST 2, @*Ohno Sawako 1 , Hatabayashi Kunitada 1, Hirose Yasushi 1,2, Shimada Toshihiro 1,2, Hasegawa Tetsuya 1,2 |
| ’ |
26 |
Artificial superlattices of AFeO2(A=Sr,Ca) with FeO2 infinite layers |
ICR,Kyoto Univ.,@*Matsumoto Kazuya 1,Inoue Satoru 1,Kawai Masanori 1,Ichikawa Noriya 1,Shimakawa Yuichi 1 |
|
27 |
Design and Characterization of Superconducting Field-Effect Transistor using Gate Insulating Film by Sol-Gel Method |
Keio University 1, Fukuoka Industrial Technology Center 2 @Fujioka Masaya 1, Matoba Masanori 1, Makino Teruhisa 2 |
|
28 |
Magneto-optical properties in spinel ferrite (Zn,Co)Fe2O4 solid solution with a composition-spread approach |
JFE MINERAL CO., Ltd. 1, IMR Tohoku Univ. 2, JST-PRESTO 3, Univ. of Tokyo 4, KAST 5, WPI-AIMR Tohoku Univ. 6, JST-CREST 7@*Iwasaki Yosuke 1, Fukumura Tomoteru 2,3, Kimura Hisamichi 2, Ohkubo Akira 2, Hasegawa tetsuya 4,5, Hirose Yasushi 4,5, Makino takayuki 6, Ueno Kazunori 6, Kawasaki Masashi 2,6,7 |
|
29 |
High quality hematite thin film growth on sapphire substrate by mist-CVD |
Kyoto Univ. 1@*Taichi Nomura 1, Shizuo Fujita 1 |
|
30 |
InSb/Al-O nanogranular thin film prepared by RF sputtering |
RIEMM@*Usui Hiroyuki 1, Abe Seishi 1, Ohnuma Shigehiro 1 |
| 6.3 Oxide Electronics |
| April 1 |
| 1a-P12-@/ II |
@
| |
|
Poster Session
1a-P12-1`29@9:30`11:30 |
|
1 |
Fabrication of TiO2 thin film by ultrasonic spray CVD method and post annealing |
Tokyo Metropolitan Univ. 1@*Kenta Nakao 1, Kazuya fujikawa 1, Yue Xiong 1, hiroharu sugawara 1 |
|
2 |
Influence of target proparty in fs-PLD method at titanium oxide |
Chubu Univ. 1, Kitagawa Ind. 2@*Yamaguchi Kazunori 1, Furuta Ken 2, Taga Yasunori 1 |
|
3 |
Change in structure of film by substrate position in fs-PLD method at titanium oxide |
Chubu Univ. 1@*Yamaguchi Kazunori 1, Taga Yasunori 1 |
|
4 |
Room-Temperature Growth of Titanium Oxide film by Plasma-CVD |
Ibaraki Univ. 1@*Higuchi Tomoyuki 1, Yamauchi Satoshi 1 |
|
5 |
Deposition and characterization of TiO2 thin films by RF-DC coupled reactive magnetorn sputtering |
Tokushima Univ. 1@*Tokushima Univ. Takahiro Nouda 1,Kikuo Tominaga 1,Kenji Okada |
|
6 |
Structure and photocatalytic properties of TiO2 films deposited by high rate reactive sputtering with two sputtering source II
|
Tokyo Polyechnic Univ@*Ishihara Daiki 1,Ueda Katuya 1,Sakai Tetsuya 1,Sato Noriyuki 1,Mochizuki Syouhei 1,Hoshi Yoichi 1 |
|
7 |
Low temperature preparation of TiO2 thin films by RF magnetron sputtering method |
Grad. School of Eng. Shizuoka Univ.1, Grad. School of Eng. Tokyo Polytechnic Univ.2@Endo Tatsuya1,*Ito Tatsuya1,Isai Masaaki1,Ishihara Daiki2,Sato Noriyuki2,Mochiduki Syohei2,Sakai Tetsuya2,and Hoshi Yoichi2 |
|
8 |
The effect of oxygen vacancies for super hydrophilic of TiO2 thin films (II) |
Tokai Univ.@*Jun Shimanura, Motohiro Suzuki, Hiroshi Kuwahata |
|
9 |
Influences of buffer and surfactant layers on structure of TiO2 thin films |
Inst. Industrial Science, The Univ. of Tokyo@*Masao Kamiko 1, Kazuaki Aotani 1, Ryoichi Yamamoto 1 |
|
10 |
Photocatalytic characteristic of zinc oxide nano-islands and application to ultraviolet sensor. |
Takamatsu-NCT 1@*Ozaki Takashi 1, Okano Hiroshi 1 |
|
11 |
Correlation between surface and visible light adsorption photocatalytic activities of Tungsten Oxide particles. |
Toshiba Materials 1,Toshiba 2@*Sasaki akito 1,Yamabe Junsei 2,Makino Nobuaki 2,Sakurai Naoaki 2,Sato Akira 1,Shirakawa Yasuhiro 1,Okamura Masami 1 |
|
12 |
Water Molecule Adsorption to the Surface of InVO4 Photo-catalyst and the Electronic Structure Properties |
NIMS@*Oshikiri Mitsutake 1 |
|
13 |
Optically deduced transport properties of Nb-doped anatase TiO2iTNOj transparent conducting films |
Kanagawa Academy of Sci. and Technol. 1, WPI-AIMR, Univ. Tohoku 2, Dept. Sci, Univ. Tokyo 3@*Yamada Naoomi 1, Hitosugi Taro 1,2, Hirose Yasushi 1,3, Nakao Shoichiro 1,2, Ngoc Lam Huong Hoang 1,3, Toshihiro Shimada 1,3, Tetsuya Hasegawa 1,3 |
|
14 |
Preparation of nanocrystalline thin films of TiO2 |
Tokyo University of Science, Yamaguchi 1@*Yoshida Kazumasa 1, Miyagawa Toshiaki 1, Hoshi Hajime 1 |
|
15 |
Transport properties and electronic states of anatase Ti1-xNbxO2 thin films |
Univ. of Tokyo 1,2, JST-CREST 3, WPI-AIMR Tohoku Univ. 4, KAST 5@*Nogawa Hiroyuki 1, Chikamatsu Akira 1, Kumigashira Hiroshi 2,3, Oshima Masaharu 2,3, Hitosugi Toro 4,5, Hirose Yasushi 1,5, Shimada Toshihiro 1,5, Hasegawa tetsuya 1,5 |
|
16 |
Characterization of ultrafast carrier dynamics of nanostructured ZnO films using transient grating technique |
Electro-Commun. Univ. 1, Chuo Univ. 2, JST 3 @*Shen Qing 1, Katayama Kenji 2, Sawada Tsuguo 3, Toyoda Taro 1 |
|
17 |
Characterization of photovoltaic properties of TiO2 nanotube electrode adsorbed with CdSe QDs |
Electro-Commun. Univ. 1@Tamura Satoru 1, Yamada Akari 1, *Shen Qing 1, Toyoda Taro 1 |
|
18 |
Ultrafast Carrier Dynamics Characterization of TiO2 thin film with Dye Adsorption and electrolyte using Transient Grating Technique |
Electro-Commun.Univ.Dept.Appl.Phys.Chem.1,Univ.Chuo,Appl.Chem. 2,JST 3, @Suganuma Rihito 1, *Shen Qing 1, Katayama Kenji 2, Sawada Tsuguo 3, Tyoda Taro 1 |
|
19 |
Electron transport of nanostructured TiO2 electrode using Ti sheet substrate |
Univ. Electro-Commun., Dept. Appl. Phys & Chem. 1@Tomohiro Nin 1, Shen Qing 1, *Toyoda Taro 1 |
|
20 |
Photovoltaic properties of CdS/CdSe-sensitized TiO2 Solar Cells |
Electro-commun. Univ. 1@Oshikane Keita 1, Qing Shen 1, *Toyoda Taro 1 |
|
21 |
Photovoltaic Properties of Inverse Opal TiO2 Electrode Adsorbed with CdSe Quantum Dots |
Electro-commun. Univ. 1@Ayuzawa Yasumasa 1, Lina Diguna 1, Qing Shen 1, *Toyoda Taro 1 |
|
22 |
Direct characterization of electron diffusion length in ZnO and TiO2 nano-porous layer by dye-sensitized solar cell |
Univ. of Electro-Commun. 1@*Gonda Tomohiro 1, Nada Masahiro 1, Kobayashi Naoki 1 |
|
23 |
Improvement of Photorechargeability of TiO2 -WO3 Composite Electrodes |
Kagoshima Univ.@Satoru Murao 1, Tatsuya Fukuzaki 1, *Teruaki Nomiyama 1, Yuji Horie 1 |
|
24 |
Variationof Anion-doping Level of TiO2-polyaniline Composite Film by Photocharging |
Kagoshima Univ.@*Teruaki Nomiyama 1, Kentaro Takigawa 1, Kota Aminaka 1, Yuji Horie 1 |
|
25 |
Temperature Dependence of Photoconductive decay in Titanium Oxide Film |
Aichi Univ. of Technology 1,Gifu Univ. 2@*Sakaguchi Koichi 1,Fukazawa Masaki 1,Hatanaka Yoshinori 1,Shimakawa Koichi 2 |
|
26 |
Transport and magnetic properties of CoxTi1-xO2-Β films grown on LaSrAlO4(001) |
Univ. of Tokyo 1, KAST 2@*Ikemiya Katsura 1, Hirose Yasushi 1,2, Shimada Toshihiro 1,2, Hasegawa Tetsuya 1,2 |
|
27 |
Intrinsic ferromagnetism in anatase Fe:TiO2-Β thin films as studied by x-ray magnetic circular dichroism |
Univ. Tokyo 1, KEK-PF 2, JST-CREST 3, KAST 4,@Enju Sakai 1, Kenta Amemiya 2,3, Akira Chikamatsu 1, Yasushi Hirose 1,4, Toshihiro Shimada 1,4, Tetsuya Hasegawa 1,4, |
|
28 |
Dependence of magnetic, electric, and optical properties on Sn concentration in Mn-doped ITO films |
Department of Electronic Science and Engineering, Kyoto Univ. 1@*Ueda Yoshihiko 1,Isozaki Shinichi 1,Nakamura Toshihiro 1,Tachibana Kunihide 1 |
|
29 |
Preparation of Ga-Doped TiO2 Films Using Spin Coating Method |
Kansai Univ. Dept. of Eectrical and Electronic Eng. 1@* Hirotoshi Yoshida 1, Shuto Sudou 1, Kazuhiro Nakamura 1 |
| 6.3 Oxide Electronics |
| April 2 |
| 2a-P16-@/ II |
@
| |
|
Poster Session
2a-P16-1`30@9:30`11:30 |
|
1 |
Magnetic and transport properties in an ultrathin film form of charge-orbital ordered perovskite manganites |
Univ. of Tokyo 1, RCAST Univ. of Tokyo 2, CREST-JST 3@Harada Nobutaka 1, *Ogimoto Yasushi 2,3, Ogawa Naoki 2, and Miyano Kenjiro 2,3 |
|
2 |
Atomic and Electronic Structure of Mn3O4 precipitates in Laser-Ablated Manganite Films |
Univ. of Tokyo 1, Cornell Univ. 2, JST 3@Takuya Higuchi 1, Takeaki Yajima 1, Lena Fitting Kourkoutis 2, Yasuyuki Hikita 1, Naoyuki Nakagawa 1, David A. Muller 2, Harold Y. Hwang 1 3 |
|
3 |
Preparation of bi-epitaxial junctions with La0.7Sr0.3MnO3 thin films. |
Nagoya Univ.@Fumiya Kato 1,Takehiro Oka 1,Yoichi Takeda 1,Hidefumi Asano 1 |
|
4 |
Simultaneous measurement of perpendicular and in-plane magnetic field gradient for La0.7Sr0.3MnO3 polycrystalline films by MFM |
Akita Univ. 1, Nagoya Univ. 2@*Yoshimura Satoru 1, Egawa Genta 1, Saito Hitoshi 1, Kato Fumiya 2, Asano Hidefumi 2 |
|
5 |
X-ray Reflectivity Characterization of Interdiffusion at LaMnO3/SrTiO3 Interfaces |
Univ. of Tokyo 1, Univ. of Tokyo 2, Pusan Nat. Univ. 3, JST 4@Takeyasu Kotaro 1, Yajima Takeaki 2, Kim Boggi 3, Hwang Harold 124 |
| £ |
6 |
Strain-controlled electronic transport in electron-doped CaMnO3 thin films and superlattices |
National Institute of Advanced Industrial Science and Technology (AIST)1, Japan Science and Technology Agency (JST), CREST2 @*Xiang Ping-Hua 1,2, Yamada Hiroyuki 1, Sawa Akihito 1, Akoh Hiroshi 1,2 |
|
7 |
LaMnO3-SrMnO3 superlattice as an electron-doped manganite |
AIST 1, CREST-JST 2@*Yamada Hiroyuki 1, Xiang Ping-Hua 1,2, Sawa Akihito 1 |
|
8 |
Low-temperature Crystallization of (Pr,Ca)MnO3 Thin Film Prepared by Sputtering Method |
ULVAC Inc., Inst. Semi. Tech.@Fukuda Natsuki 1. Kurihara Hidenao 1, Hirose Mitsutaka 1, Kikuchi Shin 1, Nishioka Yutaka 1, Suu Koukou 1 |
|
9 |
Impedance spectroscopic study On (Pr,Ca)MnO3 films exhibiting resistance change (II) |
Kyoto Univ. 1@*Oonogi Keita 1, Yokoyama Takuya 1, Homma Kouhei 1, Nakamura Toshihiro 1, Tachibana Kunihide 1 |
|
10 |
Development of Highly Reliable TaOx ReRAM based on the redox reaction mechanism |
Panasonic 1, The University of Tokyo 2, JST-CREST 3@*Z. Wei 1, Y. Kanzawa 1, K. Arita 1, Y. Katoh 1, K. Kawai1, S. Muraoka 1, S. Mitani 1, S. Fujii 1, K.Katayama 1, M. Iijima 1, T. Mikawa 1, T. Ninomiya 1, R. Miyanaga 1, Y. Kawashima 1, K. Tsuji 1, A. Himeno 1, T. Okada 1, R. Azuma 1, K. Shimakawa 1, H. Sugaya 1, and T. Takagi 1;
R. Yasuhara 2, K.Horiba 2,3, H. Kumigashira 2,3, and M. Oshima 2,3
|
|
11 |
Changes in electronic states associated with resistance switching observed by hard x-ray photoemission spectroscopy |
The Univ. of Tokyo 1, JST-CREST 2, UT-SRO 3, Panasonic 4, JASRI/SPring-8 5@Yasuhara Ryutaro 1, Horiba Koji 1-3, Kumigashira Hiroshi 1-3, Wei Zhiqiang 4, Sugaya Hidetaka 4, Takagi Takeshi 4, Ikenaga Eiji 5, Oshima Masaharu 1-3 |
|
12 |
Resistive switching property of Cu/HfO2/Pt structure by using hafnium oxide as a solid-electrolyte. |
NIMS 1@*Haemori Masamitsu 1, Nagata Takahiro 1, Chikyow toyohiro 1 |
|
13 |
Modeling of nonpolar-type resistive switching device for SPICE |
Tokyo Inst. Tech. 1, JST CREST 2@*Yamamoto Shuu'ichirou 1,2, Sugahara Satoshi 1,2 |
|
14 |
Functional MOSFET/CMOS using resistive switching devices |
Tokyo Inst. of Tech 1, JST-CREST 2 @Sugahara Satoshi 1 2, Suto Yusuke 1 2, Yamamoto Shuu'ichirou 1 2 |
|
15 |
Nonvolatile SRAM using nonpolar-type resistive switching devices |
Tokyo Inst. Tech. 1, JST CREST 2@*Yamamoto Shuu'ichirou 1,2, Shuto Yusuke 1,2, Sugahara Satoshi 1,2 |
|
16 |
A Mechanism of Resistance Change in NiO-ReRAM |
Tottori Univ. 1, Fujitsu Lab. Ltd 2@Kentaro Kinoshita 1, Takumi Okutani 1, Tatsuya Makino 1, Masayuki Yokeda 1, Kazufumi Dobashi 1, Satoru Kishida 1, Yoshihiro Sugiyama 2 |
|
17 |
Effects of Oxygen Deficiency on Electronic and Atomic Structures of Amorphous Alumina: First-Principles Calculations |
Univ. of Tokyo 1, NIMS 2@*Momida Hiroyoshi 1, Ohno Takahisa 2,1, Nigo Seisuke 2, Kitazawa Hideaki 2, Kido Giyuu 2 |
|
18 |
Non-polar switching of AlOx-ReRAM |
National Institute for Materials Science1, GIT Japan Inc.2@*Kato Seiichi1, Nigo Seisuke1, Nakano Yoshihiro2, Lee Jeungwoo1, Kitazawa Hideaki1, Kido giyuu1 |
|
19 |
Off mechanism analysis by thermally stimulated current of AlOx-ReRAM |
NIMS 1,KOBELCO RESEARCH INS.INC. 2@*Nigo Seisuke 1, Okada Hiroshi 2, Momida Yosihiro 1, Yanagimachi Osamu 1, Inoue Juniti 1, Lee Jonyu 1,Kato Seiiti 1, Kitazawa Hideaki 1, Kido Giyuu 1 |
|
20 |
Development of AlOx-ReRAM on Si substrate by electron beam patterning |
NIMS 1, GIT Japan Inc. 2@*J.W. Lee 1, Y. Nakano 2, S. Nigo 1, S. Kato 1, H. Kitazawa 1 and G. Kido 1 |
|
21 |
Effects of annealing on the structures and electrical characteristics of NiO films |
Kyoto Univ. 1@*Nishi Yusuke 1, Tsunenobu Kimoto 1 |
|
22 |
Resistance change characteristic of metal-doped NiO film |
NEC Device Platforms Res. Labs.1@Yukishige Saito1, Kimihiko Ito1, Yuko Yabe1, Hiromitsu Hada1 |
|
23 |
Temperature dependence of reset process in resistance random access memory with CoO |
NRI-AIST 1,Adv.Technol.Res.Labs. Sharp Corp. 2, NeRI-AIST 3@*Shima H 1,Takano F 1,Tamai Y 2,Muramatsu H 1,Akinaga H 1,Inoue I 3 |
|
24 |
The evaluation of oxygen vacancy motion in RRAM by calculation of nonequilibrium steady state current |
Tohoku Univ. 1@*Miura Motohito 1, Shimizu Yukihiro 1 |
|
25 |
Transport Properties of a fractional LaTiO3 layer in SrTiO3 |
Dept.Adv.Mater.Sci.Univ.Tokyo 1, ISSP 2@Ohtsuka Reina 1, Nishio Kazunori 1, Matvejeff Mikko 2, Lippmaa Mikk 1 2 |
| £ |
26 |
Physical properties and anomalous Hall effect of Eu0.5Sr0.5CoO3 thin films |
Department of Physics, Pusan National University 1, Department of Advanced Materials Science, University of Tokyo 2, Japan Science and Technology Agency 3@*Kim Bog G. 1,2, Kwon Daeyoung 1, Wu Yongsu 1, Kim Bongju 1, Hwang Y. Harold 2,3 |
| £ |
27 |
Inter-layer coupling and enhancement of ferromagnetism in (LSMO5/STOl)m super lattices |
Department of Physics, Pusan National University 1, Department of the Advanced Materials Science, University of Tokyo 2, Department of Physics, Chungnam National University 3, Japan Science and Technology Agency 4@Bongju Kim 1, Daeyoung Kwon 1, Takeaki Yajima 2, Yasuyuki Hikita 2, J. H. Song 3, Bog G. Kim 1,2, H. Y. Hwang 2,4 |
|
28 |
Magnetic Field Dependence of the Barrier Height at Nd0.5Sr0.5MnO3/Nb:SrTiO3 (110) Heterojunctions |
Univ. Tokyo 1, Corporate R&D Center, Toshiba Corp. 2, Tokyo Inst. of Technology 3, JST 4 @*Yasuyuki Hikita 1, Naoyuki Nakagawa 2, Tomofumi Susaki 3, Hidenori Takagi 1, Harold Y. Hwang 1, 4 |
|
29 |
Composition dependence of surface electronic states in La1-xSrxMnO3/Nb:STO(001) films |
The Univ. of Tokyo 1,2, JST-CREST 3, UT-SRRO 4@*Furukawa Yoko 1, Minohara Makoto 2, Yoshimatsu Kohei 1, Kumigashira Hiroshi 1,3,4, Oshima Masaharu 1-4 |
|
30 |
Magnetic and dielectric properties of EuTiO3 epitaxial films |
Univ. of Tokyo 1,KAST 2, Tohoku Univ.@Hatabayashi Kunitada 1,Hirose Yasushi 1,2,Xianqiang Cheng 1, Hitosugi Taro 2,3,Shimada Toshihiro 1,2,Hasegawa Tetsuya 1,2 |
| 6.4 Novel Materials for Thin Films |
| March 31 9:15`12:00 |
| 31a-X-@/ II |
|
1 |
Single-crystal Epitaxial thin films of AFeO2 (A=Sr, Ca) with FeO2 infinite layers |
Inistitute for Chemical Research, Kyoto Univ. 1,JASRI/SPring-8 2,Dep. of Chem., Grad. Sch. Sci., Kyoto Univ. 3@*Inoue Satoru 1,Kawai Masanori 1,Ichikawa Noriya 1,Shimakawa Yuichi 1,Mizumaki Masaichiro 2,Kawamura Naomi 2,Watanabe Takashi 3,Tsujimoto Yoshihiro 3 ,Kageyama Hiroshi 3,Yoshimura Kazuyoshi 3 |
| ’ |
2 |
Growth and properties of rare earth-doped AlBON films |
Osaka Univ. 1, Tsuyama National College of Technology 2@*Matsunouchi Keiko 1, Iwano Yuta 2, Ishikawa Akito 2, Kimura Chiharu 1, Aoki Hidemitsu 1, Itoh Kunio 2, Sugino Takashi 1 |
| ’ |
3 |
Properties of LaAlO film after rinsing with waterless solution |
Osaka Univ.1@*Honjo Masatomo 1, Komatu Naoyoshi 1, Kimura Chiharu 1, Aoki Hidemitu 1, Sugino Takashi 1 |
| ’ |
4 |
Time dependence of internal stress and molecule structure with long-term in SiO2 optical thin film |
Tokai Univ. 1CSHINCRON CO.,LTD. 2@*Nishikawa Toshiyuki 1, Ono Hiroi 1, Murotani Hiroshi 1, Iida Yoshitaka 2, Okada Katsuhisa 2 |
| ’ |
5 |
Characterization of MgO(111) thin films grown on Al2O3(0001) substrates |
MSL Tokyo Tech 1,ERATO-SORST,JST 2,FRC, Tokyo Tech 3,PRESTO,JST 4 @*Kumada Sho 1,Matsuzaki Kosuke 1,Nomura Kenji 2,Hosono Hideo 1,2,3,Susaki Tomofumi 1,4 |
| |
|
Break 10:30`10:45 |
|
| ’ |
6 |
Epitaxial growth of LaB6/ SrB6 bilayer on the ultrasmooth sapphire substrate by Laser MBE |
Dept. of Innov. Eng. Mater., Tokyo Inst. of Tech. 1, TOSHIMA Manufacturing Co., Ltd. 2@*Kato Yushi 1, Akita Yasuyuki 1, Shiraishi Naoki 1, Tsuchimine Nobuo 2, Kobayashi Susumu 2, Yoshimoto Mamoru 1 |
| ’ |
7 |
Fabrication of alkali halide thin films on oxide substrates by CW-IR laser MBE |
MSL Tokyo tech.@*Shun Katoh ,Shingo Maruyama ,Yuji Matsumoto |
| ’ |
8 |
SiO2 sol-gel thin film prepared by low-temperature sintering |
Tokai Univ. 1@Satoru Yoshino1,Hikaru Sugiyama1,Hokuto Ina1,Hiroshi Murotani1 |
| ’ |
9 |
Temperature dependence of electrical properties of transparent conductive film based on phosphate glass |
Chubu Univ. 1@*Ichimura Kazuya 1,Tahashi Masahiro 1,Goto Hideo 1,Ido Toshiyuki 1 |
| ’ |
10 |
Strain-driven Phase Transitions in VO2 Thin Films |
Dept.Adv.Mater.Sci.Univ.Tokyo 1, ISSP 2@*Kikuzuki Tatsuya 1, Ohnishi Tsuyoshi 2, Lippmaa Mikk 1,2 |
| 6.4 Novel Materials for Thin Films |
| April 1 9:00`18:45 |
| 1a-ZH-@/ II |
|
1 |
EB-Induced Orientation-Selective-Epitaxial Growth of CeO2(100)/Si(100) Utilizing AEI System |
Iwaki Meisei Univ.@*Tomoyasu Inoue 1, Shigenari Shida 1 |
|
2 |
Effects of H2O in CeO2 thin film deposition by MOCVD |
Hosei Univ. 1,Semiconductor Process Laboratory Co.,Ltd. 2@*Otsuka Kentaro 1,Izu Takanori 1,Ogawa Masatsugu 1,Suda Masakatsu 1,Morita Chikayoshi 1,Yamamoto Yasuhiro 1,Suzuki Setsu 2 |
|
3 |
Preparation of NaSi thin films prepared by heat resistance apparatus
|
Gifu Univ. 1, Gifu Nati. Coll. Technol. 2@Ueno Hiroyuki 1, Tomoki Narita 1, Baba Tatuya, Iida Tamio 2, Habuchi Hitoe 2, Ban Takayuki 1, Kume Tetuzi 1, Nonomura Shuichi 1 |
|
4 |
The preparation and properties of ZnO thin films by hydrothermal method |
tokyo Univ. of Sci.@Yuuichirou Nadamura 1, *Zhiyong Qiu 1, Takashi Ishiguro 1 |
|
5 |
Composition control of InxGa1-xN fabricated at room temperature using photo-chemical vapor deposition |
V-Technology Co,. Ltd 1,Nitto Optical Co,. Ltd 2,Univ. Tokyo 3@*Ito Keiichi 1,2,Yamazaki Shunsuke 3,Yatsui Takashi 3,Ohtsu Motoichi 3 |
|
6 |
Growth of crystallized thin film of layered semiconductor GaS on glass substrate |
Tokyo National Coll. 1, Shibaura Mech. 2, Divergence 3@*Ito Hiroshi 1, Kawamata Yoshio 2, Ohyama Masanori 3 |
| |
|
Break 10:30`10:45 |
|
|
7 |
Electrical properties of Cr-N thin films deposited by RF magnetron sputtering – N2 flow ratio dependence - |
TRI Osaka Prefecture 1, Res. Inst. for 21th Osaka Prefecture Univ. 2@*Kakehi Yoshiharu 1, Satoh Kazuo 1, Yotsuya Tsutom 2 |
|
8 |
Temperature dependence of electrical properties of Cr-N thin films deposited by RF magnetron sputtering |
TRI of Osaka Prefecture 1, Res. Inst. for Twenty First Century Osaka Prefecture Univ. 2, Osaka Prefecture Univ. 3@*Satoh Kazuo 1, Kakehi Yoshiharu 1, Uno Mayumi 1, Tsutom Yotsuya 2, Ishida Takekazu 3 |
|
9 |
Micro-crystalline Ge thin films prepared by the reactive RF sputtering with H2 and inert gas mixtures |
Tokai Univ 1@*Yuta Hatano 1,Nohiro Yoshida 1,Masao Isomura 1 |
|
10 |
Formation of Mg-Ni Thin Films with the substrate temperature by Alternate Deposition of Mg Film and Ni Film |
Niigata Univ. 1@*okada tomohiro 1,hirata makoto 1,shimizu takeru 1,shimizu hidehiko 1,iwano haruo 1,kawakami takahiro 1 |
|
11 |
Formation of High Hardness Film by Electroplating in Foamed Electrolyte. |
Tokyo Univ.Agricul.&Technol 1,Yamada Co.Ltd 2@*Usui Hiroaki 1,Ichihara Shoji 1,Sugawara Tomohiro 1,
Yamada Yoshiyasu 2,Furuhashi Takahiro 2 |
| |
|
Lunch 12:00`13:00 |
|
| 1p-ZH-@/ II |
| ’ |
1 |
Optical conductivity evaluation of cerium fluoride thin films by pulsed laser deposition and application of UV sensor |
Nagoya Institute of Technology@1, Tokuyama Corporation@2, Tohoku Univ@3@@*Kazuyoshi TABATA 1, Yohei MASUKAWA 1, Tomohito TAMAKOSHI 1, Yo ICHIKAWA 1, Shingo ONO 1, Kentaro FUKUDA 2, Toshihisa SUYAMA 2, Yui YOKOTA 3, Takayuki YANAGIDA 3, Akira YOSHIKAWA 3, Fumio SAITO 3 |
| £’ |
2 |
Thickness Determination of Graphene Films on Polycrystalline Metal Surfaces Using Auger Electron Spectroscopy |
National Inst. for Materials Science@Gao Jian-Hua 1, Xu Mingsheng 1, Fujita Daisuke 1 |
| ’ |
3 |
Fabrication and Characterization of Graphenes by Cleavage Technique |
Nihon University@*Teppei Maeda 1, Keiichirou Matsuyama 1, Nobuyuki Iwata 1, Hiroshi Yamamoto 1 |
| ’ |
4 |
Formation of P(VDF-TeFE) piezoelectric polymer thin film with various solvents |
Osaka Univ. 1@*Jeong JonHyeon 1, Kiura Chiharu 1, Aoki Hidemitsu 1, Sugino Takashi 1 |
|
5 |
Preparation and magnetic properties of epitaxial EuTiO3 thin films |
Kyoto Univ. 1@Naoki Wakasugi 1, Koji Fujita 1, Shunsuke Murai 1, Katsuhisa Tanaka 1 |
|
6 |
Epitaxial growth of LiMnO2 (Ώ-NaFeO2 structure) thin films |
Univ. of Tokyo 1, Tohoku Univ. 2, KAST 3@Tsuruhama Tetsukazu 1, *Hitosugi Taro 2,3, Hirose Yasushi 1,3, Chikamatsu Akira 1, Shimada Toshihiro 1,3, Hasegawa Tetsuya 1,3 |
|
7 |
Electron conduction of SrTiO3 surfaces/interfaces: Two-layer conduction model |
NIMS 1, JST-CREST 2, Univ. Tokyo 3@*Ohnishi Tsuyoshi 1,2, Lippmaa Mikk 3 |
|
8 |
Pulsed Laser Deposition: Fabrication of LiCoO2 thin films for all solid-state thin film Li battery |
NIMS 1, JST-CREST 2@*Ohnishi Tsuyoshi 1,2, Takada Kazunori 1,2 |
| £ |
9 |
Growth and Mechanism of Cobalt Oxide Nanostructured Films by Oblique-angle Pulsed Laser Deposition |
AIST 1@*Liang Li 1, Takeshi Sasaki 1, Naoto Koshizaki 1 |
|
10 |
Fabrication of TiO2 micro-nano hierarchical ordered structures with hexagonal non-closed packed arrangement |
AIST 1@Li Yue 1, Sasaki Takeshi 1, Shimizu Yoshiki 1, *Koshizaki Naoto 1 |
|
11 |
Temperature Dependence of Current-Voltage Characteristics and Electric Conduction Mechanism of Au/Nb2O5/Nb Structure |
College of Engineering Nihon Univ. 1, Hitachi AIC Inc. 2@H Amano 1, M Ikeda 1, H Shimizu 1, H Endo 2, Y Hama 2, T Kitamura 2, Y Shibasaki 2, K Iida 2 |
| |
|
Break 15:45`16:00 |
|
|
12 |
Temperature dependence of electric characteristics of PEDT/Ta2O5/Ta structure |
Nihon Univ. 1, Hitachi AIC Inc. 2@*Daisuke Namatame 1, Masanori Ikeda 1, Hirohumi Shimizu 1, Yoshiki Hama 2, Takehisa Kitamura 2, Yoko Shibasaki 2, Kazuyuki Iida 2 |
|
13 |
Loss Properties of Anodized Thin Film Capacitor Made of Co-Sputtered Nb-Hf Alloy Films |
Kitami Inst. Tech. 1,Kyusyu Inst.Tech. 2@*Kimizaki Hidefumi 1,Shibata Tomoharu 1,Honma Yasuyuki1,Shinkai Satoko 2,Sasaki Katsutaka 1,Yamane Misao 1,Abe Yoshio 1 |
|
14 |
Improved adhesion by introducing MPTMS-SAM at the interface of Ag thin film/SiO2 layer |
Kitami Inst. Tech. 1,Kitami Inst. Tech. 2,Kitami Inst. Tech. 3,Kitami Inst. Tech. 4@*Fudei Terumasa 1,Kawamura Midori 2,Abe Yoshio 3,Sasaki Katsutaka 4 |
|
15 |
Epitaxial growth of (0001) InN films on (111) HfN / (111) Si and evaluation of the surface morphologies |
Kitami Inst. Tech. 1@*Asano Yuichi 1, Yamazaki Takehiro 1, Yanagisawa Hideto 1, Sasaki Katsutaka 1 and Abe Yoshio 1 |
|
16 |
Characterization of Stress in Switchable Mirror Thin Film |
AIST 1@Yoshimura Kazuki 1, Bao Shanhu 1, Tajima Kazuki 1, Yamada Yasusei 1, Okada Masahisa 1 |
|
17 |
Mg-Ti Switchable Mirror Film Applied for Flexible Plastic Substrate and Investigation of Optical Switching Property |
AIST@*Kazuki Tajima 1, Yasusei Yamada 1, Shanhu Bao 1, Masahisa Okada 1, Kazuki Yoshimura 1 |
|
18 |
Synthesis of the hollandite-type titanium oxide thin films |
Graduate School of Natural Science and Technology, Okayama Univ. 1,
Research Lab. for Surface Science, Fac. of Science, Okayama Univ. 2,
JST-CREST 3, JASRI/SPring-8 4
@*K. Noami 1, Y. Muraoka 1,2,3, M. Hirai 1,2, T. Wakita 2, T. Muro 4, Y.Tamenori 4, T. Yokoya 1,2,3 |
|
19 |
Fabrication of bimetallic whiskers by glancing angle deposition on high temperature sabstrate(HT-GLAD) |
Kyoto Univ. 1@*Hamachi Kenji 1, Suzuki Motofumi 1, Kinoshita Sadamu 1, Nakajima Kaoru 1, Kimura Kenji 1 |
|
20 |
Glow-discharge properties of MgO-coated diode electrodes |
Nagaoka Univ. Tech. 1, Air Water Inc. 2@*Matsuda Kuniyuki 1, Takano Akihiro 1, Ooto Masahiro 1, Kiyokawa Toshio 2, Ohshio Shigeo 1, Akasaka Hiroki 1, Saitoh Hidetoshi 1 |
|
21 |
Glow-dhischarge of Y2O3-coated diode electrodes |
Nagaoka Univ. Tech. 1, Air Water Inc. 2@*Matsuda Kuniyuki 1, Takano Akihiro 1, Ooto Masahiro 1, Kiyokawa Toshio 2, Ohshio Shigeo 1, Akasaka Hiroki 1, Saitoh Hidetoshi 1 |
|
22 |
Hydrophobic treatment using PTFE films deposited on clothes by Cat-CVD |
Jpn. Adv. Inst. Sci. and Tech.@Mai Mishiro 1, Michihisa Takachi 1, Keisuke Ohdaira 1, Hideki Matsumura 1 |
| 6.4 Novel Materials for Thin Films |
| April 2 9:00`12:00 |
| 2a-ZH-@/ II |
|
1 |
Development of ultra-small module-type thin-film fabrication and evaluation system with flexible sample transfer mechanism |
The Univ. of Tokyo 1, NIMS2@The Univ. of Tokyo1, NIMS2,
*K. Itaka 1, Mikk Lippmaa 1, Tsuyoshi Ohnishi 2, Masao Katayama1, Toyoshiro Chikyow 2, Hideomi Koinuma 1 |
|
2 |
Structural analysis of a single-phase ΐ-AlN thin film grown by pulsed laser deposition using synchrotron X-ray diffraction |
SAGA-LS 1, Kyushu Univ. 2@*Sumitani Kazushi 1, Ohtani Ryota 1, You Nakagawa 2, Satoshi Nakagawa 2, Tsuyoshi Yoshitake 2 |
|
3 |
Surface Morphology of Cu Films on SiO2/Si Substrate Prepared by Unbalanced Magnetron Sputtering Assisted by ICP |
Hiroshima Inst.of Tech.1,Toyo Adv.Tech.Co.,Ltd.2@*Fukui Kazuki 1,Morishige Fumiya 1,Otani Kazuki 1,Kasai Satoshi 1,Masuda Yukihiro 1,Kawabata Keishi 1,Okamoto Keishi 2 |
|
4 |
Observation of albumin adsorption in the acidic solution on titania using surface plasmon resonance detection |
Nagaoka Univ. Tech@*Ii Kiyoto 1,Ohshio Sigeo 1,Akasaka Hiroki 1,Saitoh Hidetoshi 1 |
|
5 |
Analysis of reaction at solid-liquid interface using surface plasmon resonance |
Nagaoka Univ. Tech.@*Konishi Miyuki 1, Ohshio Shigeo 1, Akasaka Hiroki 1, Saitoh Hidetoshi 1 |
|
6 |
Direct patterning of oxide films by a surface plasma discharge technique |
Shizuoka Univ.@Shikatani Masahiro, Yosuke Sonohara, Shibayama Yoshihiro, *Okuya Masayuki |
| |
|
Break 10:30`10:45 |
|
|
7 |
Preparation of oxide thin films by a coplanar plasma discharge technique |
Shizuoka Univ.@Yoshihiro Shibayama, Yoshihiro Shikatani, Yosuke Sonohara, *Masayuki Okuya |
|
8 |
Combinatorial Evaluation method for Crystallization Temperature of Thin Film Amorphous Alloy Using Thermography |
Tokyo Tech. Dept. Mechano-Micro Eng. 1, Tokyo Tech. P&I Lab. 2, Tokyo Tech. Emeritus Professor 3@*Yuko Aono 1, Seiichi Hata 2, Junpei Sakurai 2, Akira Shimokohbe 3 |
|
9 |
Effect of light penetration depth on pulse heat thermoreflectance measurement |
Kobe Steel. 1,Kobelco Res.Inst. 2@*Inui Masahiro 1,Miyake Aya 2,Ikeda Ken-ichi 2,Miyake Syugo 2,Takamatu Hiroyuki 2 |
|
10 |
Electrolytic grinding of plated copper films for micromolding of three-dimensional structures |
Yokohama Nat'l Univ@* Kawajiri yasunobu 1,Kitayama shinya 1,Mukai kohki 1 |
|
11 |
The analysis of the recursive functions of LaFePdO3 perovskite automotive catalyst surface |
Osaka Univ.@*Hirofumi Kishi, Hiroshi Nakanishi, Hideaki Kasai |
| 6.5 Surface Physics and Vacuum |
| March 31 9:00`11:30 |
| 31a-TD-@/ II |
|
1 |
Diffusion layer of NiP thin film on GaAs(001) substrate |
Mitsubishi Electric Corp. 1,ISIR, Osaka Univ. 2@*Nishizawa Koichiro 1,Kojima Yoshiki 1,Fujii Takayuki 1,Shirai Koun 2 |
|
2 |
A method to suppress diffusion of Ru into Pt films by a diffusion barrier |
National Inst. for Materials Science 1, Grad. School of Natural Sci.& Tech. Kanazawa Univ. 2@*Kim Tae Young 1,Yoshitake Michiko 1, Morimoto Akiharu 2, Kawasaki Kentarou 2, Kawae Takesi 2, Yagyu Shinjiro1, and Chikyo Toyohiro 1 |
|
3 |
Interfacial reaction during high temperature annealing of ultrathin SOI substrates |
Osaka Univ.@*Sudoh Koichi 1,Naito Muneyuki 1 |
|
4 |
LEED analysis of alkali-metal structures on vicinal SiC(0001)-graphite layers |
Kyushu Univ.@Mizuno Seigi 1, Suzuki Miyuki 1, Hayashi Kenjiroh 1, Tanaka Satoru 2, Tochihara Hiroshi 1 |
|
5 |
STM and STS measurements of Pt nano-clusters on graphite |
Univ. Tsukuba@Takahiro Kondo 1, Yosuke Iwasaki 1, Yujiro Honma 1, Jyu Pyo Oh 1, Kenji Watahiki 1, Daigo Hatake 1, Tetsuya Suzuki 1, Junji Nakamura 1 |
| |
|
Break 10:15`10:30 |
|
|
6 |
Stacking domains of epitaxial graphene grown on SiC |
NTT Basic Research Labs. 1, Kyushu Univ. 2@*Hibino Hiroki 1, Mizuno Seigi 2, Kageshima Hiroyuki 1, Nagase Masao 1, Yamaguchi Hiroshi 1 |
|
7 |
Theoretical study on epitaxial graphene formation on SiC(0001) surfaces |
NTT Basic Research Labs. 1@*Kageshima Hiroyuki 1, Hibino Hiroki 1, Nagase Masao 1, Yamaguchi Hiroshi 1 |
|
8 |
Adsorption structure of phenylphosphonic acid on alumina and metal surfaces |
NIMS 1,Charles Univ. 2@*Yagyu Shinjiro 1, Yoshitake Michiko 1, Tsud Nataliya 2, Chikyow Toyohiro 1 |
|
9 |
Spin polarization of benzene and cyclohexane adsorbed on Ni(111) |
NIMS 1@*Entani Shiro 1, Kurahashi Mitsunori 1, Yamauchi Yasushi 1 |
| 6.5 Surface Physics and Vacuum |
| April 1 9:00`18:00 |
| 1a-TD-@/ II |
|
1 |
Observation of the crystallization of D2
O ice on the Ru(0001) surface by IRAS |
Kyushu Inst, Tech. 1@*Yamauchi Takashi 1, Mine Kazuyuki 1, Nakashima Yasunari 1, Namiki Akira 1 |
|
2 |
Photon-Stimulated Desorption of Water-Methane Complex Cluster on the Rare Gas Solid Surface
|
Gakushuin Univ 1@Takahisa Ide 1,*Daigo Matsumoto 1,Naoto Ohno 1,Takashi Miura 1,Ichiro Arakawa 1 |
| ’ |
3 |
Steric effects of NO dissociative adsorption on Si(111) surface |
Renovation Center of Instruments for Science Education and Technology, Osaka Univ. 1, Grad. School of Science, Osaka Univ. 2, PRESTO, JST 3, University of Hyogo 4, JAEA 5
@*Hashinokuchi Michihiro 1, Okada Michio 1,2,3, Ito Hironori 2, Kasai Toshio 1,2, Moritani Kousuke 4, Teraoka Yuden 5 |
|
4 |
Dissociative adsorption of CH4 on Cu(111) by using supersonic molecular beams |
Univ.Tsukuba@*Sugawara Chihiro 1,Yokoyama Yuta 1, Yamada Yoichi 1, Sasaki Masahiro 1 |
| £ |
5 |
Impact of Nanometric Surface Irregularities and Defects on the Chemisorption of Carbon Dioxide and Water on BaTiO3-SrTiO3(001) Surfaces |
Fujitsu Lab. Ltd 1, Tokyo Institute of Technology 2@*J. D. Baniecki 1, M. Ishii 1, K. Kurihara 1, K. Yamanaka 1, Y. Kobayashi 1, T. Imada 1, T. Yano 2, and K. Shinozaki 2 |
| |
|
Break 10:15`10:30 |
|
|
6 |
Atomic Arrangements and Magnetic Properties of Ga-substituted Mn-Atomic Wires on GaAs(110) |
The Univ. of Electro-Communications 1, The Univ. of Tokyo 2@*Hirayama Motoi 1, Nakamura Jun 12, Natori Akiko 1 |
|
7 |
Surface reconstruction of clean bcc-Fe{110}: A quasi-hexagonal top-layer with periodic height modulation |
Karlsruhe Univ. 1, Gakushuin Univ. 2@*Yamada Toyokazu 1, Tamura Hidetoshi 2, Shishido Motoyuki 2, Irisawa Toshikazu 2, Mizoguchi Tadashi 2 |
|
8 |
Position of segregating atoms and work function on a surface with segregation (1) I-V LEED & first-principles calculations |
National Inst. Materials Sci. 1, Charles Univ. 2@*Yoshitake Michiko 1, Karas Ivan 1,2, Houfek Jan 1,2, Saminathapillai Madeswaran 1, Song Weijie 1, Matolín Vladimir 1,2 |
|
9 |
Position of segregating atoms and work function on a surface with segregation (2) experiments vs. first-principles calculations |
National Inst. Materials Sci. 1, Charles Univ. 2@*Yoshitake Michiko 1, Karas Ivan 1,2, Houfek Jan 1,2, Saminathapillai Madeswaran 1, Song Weijie 1, Matolín Vladimir 1,2 |
|
10 |
First principles analysis of oxygen adsorption on surfaces of iron |
Info. Tech. Center Univ. of Toyama 1, Graduate School of S.E.R. Univ. of Toyama 2@*Nunomura Norio 1, Sunada Satoshi 2 |
|
11 |
Desorption of atomic hydrogen absorbed on Ag/Si(111) surfaces (II) |
Tokyo Institute of Technology 1@*Sugimoto Tadashi 1,Yuki Aoki 1,Hiroyuki Hirayama 1 |
| |
|
Lunch 12:00`13:00 |
|
| 1p-TD-@/ II |
|
1 |
Growth and Structure of N2 Films Physisorbed on Ag crystal |
Department of Physics, Gakushuin University. 1@Shuichi Moto 1, Natsumi Kimura 1, Yuka Matsumoto 1, Takashi Miura 1,*Ichiro Arakawa 1@ |
|
2 |
DIET study of physisorbed hydrogen on a cold copper surface |
Gakushuin Univ. 1@Taku Kawarabuki 1,Youshuke Ootani 1,Takashi Miura 1,*Ichiro Arakawa 1 |
|
3 |
Pre-washing Effects on Corrosion Resistance and Electrical Resistance of Aluminum Chromate Conversion Coating |
Mitsubishi Electric Corp. 1@*Kinugawa Masaru 1,Kanematsu Yasuyuki 1,Ijima Takashi 1 |
|
4 |
CO adsorption on Lanthanum Hexaboride (111) and (100) investigated by RAIRS |
Univ. of Illinois at Chicago 1, Waseda Univ. 2, National Inst. for Material Science 3@*Thomas Yorisaki 1,2, Aashani Tillekaratne 1, Chuhei Oshima 2, Shigeki Otani 3, Michael Trenary 1 |
|
5 |
Vibration spectra of oxygen adsorbed LaB6 by means of RAIRS |
Univ.of Illinois at Chicago 1, Waseda Univ. 2, National Inst, for Material Science 3@*Thomas Yorisaki 1,2, Aashani Tillekaratne 1, Chuhei Oshima 2, Shigeki Otani 3, Michael Trenary 1 |
|
6 |
X-Ray Photoemission Study of Oxide Formation on TiNi Using a Hyperthermal O2 Molecular Beam |
Osaka Univ. 1, PRESTO 2, JAEA 3@Souwa Makoto 1, Okada Michio 1,2, Yoshigoe Akitaka 3, Teraoka Yuden 3, Kasai Toshio 1 |
|
7 |
Surface material and roughness effects on conductance at molecular flow through parallel disks |
AIST@*Hajime Yoshida. Masanori Shiro, Kenta Arai, Masahiro Hirata, Hitoshi Akimichi |
|
8 |
Counter Flow Ionization Gauge II |
Fac.Eng, Kobe Univ. 1, Kure Coll. of Tech. 2@Naoyuki Arai 1, Shinya Hori 2, *Toru Kanaji 1, Makoto Tanaka 2, Toshio Urano 1 |
|
9 |
Quick Pumping to UHV by Optimizing the Nitrogen Purge Line |
Kitano Seiki Co., Ltd 1,KEK 2@*Ko Yamazaki 1,Junichi Shike 1,Motoi Yamagata 1,Masahiro Kitano 1,Michiru Nishiwaki 2,Shigeki Kato 2 |
|
10 |
Partial Pressure Measurement of an Ozone Gas: Evaluation of Its Dissociation by Infrared Absorption |
AIST 1, Meidensha Corp. 2@Nakamura Ken 1,Kameda Naoto 1,2,Nishiguchi Tetsuya 1,2,Nonaka Hidehiko 1,Ichimura Shingo 1 |
| |
|
Break 15:30`15:45 |
|
|
11 |
Growth and optical property of epitaxial GaSb thin films on Si substrates covered with ultrathin Si oxide films |
The Univ. of Tokyo 1, Osaka Univ. 2@*Miwa Takafumi 1, Kanai Ryuiti 1, Sugimoto Tomohiro 1, Nakamura Yoshiaki 2, Ichikawa Masakazu 1 |
|
12 |
Ag Nano Clusters Formation by Gas Exposure onto Si(111)\sqrt{3}\times\sqrt{3}-Ag Surface |
Nagoya Univ. 1@*Nakahara Hitoshi, Moriwaki Yasuhiro, Saito Yahachi |
|
13 |
Structural Observation and Evaluation of Metal Alloy Nano-Clusters on Si(111)-7x7 Surfaces by UHV-TEM/STM |
NIMS 1, Saitama Inst. Technol. 2@Miyoko Tanaka 1, Atsushi Teraoka 2, Masayuki Shimojo 2
|
|
14 |
Annealing effect to light emitting efficiency in the 1.5Κm range in Si/Ge1-xSnx dots/Si structures |
Univ. of Tokyo 1, Osaka Univ. 2@*Norihito Fujinoki 1, Yoshiaki Nakamura 2, Masakazu Ichikawa 1 |
|
15 |
Silicide nanowire on Si(110) surface formed by Fe and Co deposition |
Nagoya Univ. 1, EcoTopia Sci. Inst. 2@*Yutaka Ohira 1, Takayoshi Tanji 1,2 |
|
16 |
Arrangement control of Ge quantum dots on ultrathin SiO2/Si(001) substrates using block copolomer PEOm-b-PMA(Az)n |
The Univ. of Tokyo 1, Osaka Univ. 2, Tokyo Inst. of Tech. 3@*Akiyuki Murayama 1, Yoshiaki Nakamura 2, Ryoko Watanabe 3, Tomokazu Iyoda 3, Masakazu Ichikawa 1 |
|
17 |
Observation of dissociation process of polymers by photo-induced desorption spectrometry |
Graduate school of Engi Miyazaki Univ 1,Cooperative Research Center Miyazaki Univ 2,ESCO Ltd. 3,NTP Co., Ltd.4@Makoto Wasamoto1, Masahito Katto2, Nobuyoshi Miyabayashi3, Wataru Sasaki4, *Atushi Yokotani1 |
|
18 |
Surface structure analysis by Patterson function with LEED I-V curves IV |
Fac. Eng. Kobe Univ.@Murata Atsuko 1,Hori Shinya 1,Tanaka Shota 1,Urano Toshio 1 |
| ’ |
19 |
Development of a low-energy electron diffraction apparatus using field-emitted electrons |
Kyushu Univ. 1@*Anegawa Kenta 1, Iwasaki Daigo 1, Mizuno Seigi 1 |
| 6.5 Surface Physics and Vacuum |
| April 2 9:00`12:30 |
| 2a-TD-@/ II |
|
1 |
Role of translational kinetic energy of O2 in oxygen adsorption process on Si(111)]7~7 surface at room temperature |
Japan Atomic Energy Agency@*Akitaka Yoshigoe, Yuden Teraoka |
|
2 |
Scanning probe microscopy installed at surface reaction analysis apparatus (SUREAC2000) at BL23SU of SPring]8 |
Japan Atomic Energy Agency@*Akitaka Yoshigoe, Yuden Teraoka |
|
3 |
Real-time optical measurements of O2, NO, CO reaction processes on Si(001) |
Yokohama Nat'l Univ. 1, Nat'l Defense Accademy 2@Shin-ya Ohno1, Toshiyuki Ochiai1, Junya Koizumi1, Fumitake Mitobe1, Takanori Suzuki2, Ken-ichi Shudo1, Masatoshi Tanaka1 |
| ’ |
4 |
First principles analysis on formation process of 1 Mono-Layer oxide film on Si(110) surface |
Okayama Pref. Univ. 1@*Nagasawa Takahiro, Shiba Seiji, Sueoka Koji |
|
5 |
Time-of-flight(TOF) spectra of HD molecules abstracted from the Si surface |
Kyushu Inst. 1@Yasutomi Goro 1,Sato Shinichiro 1,Yoshida Yutaro 1,Arifur Khan 1,Narita Yuzuru 1,*Namiki Akira 1 |
|
6 |
Structure analysis of Ba/Si(100) surface by RHEED rocking curve |
Fac.Eng.Kobe Univ@Shinya Ando 1,*Toshitaka Fujii 1, Takahiro Tamiya 1,Toshio Urano 1 |
| |
|
Break 10:30`10:45 |
|
|
7 |
Phase transition of the Si(111)γ21~γ21-(Au,Ag) Structure by Reflection High-Energy Electron Diffraction Patterns |
Japan Women's Univ. 1@*Kido Nozomi 1,Ichimiya Ayahiko 1 |
|
8 |
Si growth process on the Si(111)γ3~γ3Ag surface II |
Japan Women's Univ. 1@*MinamiTomoko 1, Ichimiya Ayahiko 1 |
| ’ |
9 |
Controlling of the growth mode of MgO(111) ultrathin film by using conductive substrates |
MSL, Tokyo Tech. 1, ERATO-SORST, JST 2, FRC, Tokyo Tech. 3, JST-PRESTO 4@*Hironori Takagi 1, Kosuke Matsuzaki 1, Kenji Nomura 2, Hideo Hosono 1,2,3, Tomofumi Susaki 1,4 |
| ’ |
10 |
X-ray photoemission study of ultrathin MgO film |
MSL Tokyo Tech 1, FRC,Tokyo Tech 2, JST 3@*Honda Yoshitaka 1, Koizumi Ikue 1, Yanagi Hiroshi 2, Hosono Hideo 1,2, Susaki Tomofumi 1,3 |
| ’ |
11 |
The interface conductivity of DyScO3/SrTiO3 |
Dept.Adv.Mater.Sci.Univ.Tokyo 1, ISSP 2@*Nishio Kazunori 1, Abe Takuya 1, Lippmaa Mikk 1,2 |
| ’ |
12 |
Electron irradiation-induced surface reduction on the SnO2-TiO2 epitaxial thin film |
MSL Tokyo Tech. 1, Univ. of Tokyo 2 @*Yutaro Komuro 1, Hiroshi Kumigashira 2, Masaharu Oshima 2, Yuji Matsumoto 1 |
|
13 |
First-Principles Calculations of Nano-Catalyst-Particle Generation by Spinodal Decomposition |
Graduate School of Engineering Science, Osaka Univ. 1@*Hidetoshi Kizaki@1, Koichi Kusakabe 1, Soichiro Nogami 1, Hiroshi Katayama-Yoshida 1 |
| 6.6 Probe Microscopy |
| March 30 9:00`17:00 |
| 30a-TE-@/ II |
|
1 |
Nano-scale Elemental Analysis of Metal-Semiconductor Interface using SR-STM System -Evaluation of Elemental Contrast- |
Osaka Univ. 1, RIKEN/SPring-8 2, JST(PRESTO) 3, Inst. Molecular Science 4, NIMS 5@*Tanaka Takehiro 1,2, Saito Akira 1,2,3, Hosokawa Hiromasa 1,2, Takagi Yasumasa 2,4, Notsu Hiroshi 1,2, Tanaka Yoshihito 2, Kohmura Yoshiki 2, Akai-Kasaya Megumi 1,3, Ishikawa Tetsuya 2, Shin Shik 2, Kuwahara Yuji 1,2, Aono Masakazu 5 |
|
2 |
Scanning tunneling spectroscopy on the n-type GaAs(110) surface and simulation analysis |
Hokkaido Univ. 1, Carnegie Mellon Univ. 2@* Nobuyuki Ishida 1, Randall M. Feenstra 2, Kazuhisa Sueoka 1 |
|
3 |
Observation and Investigation of Photo-induced Current Signals on InAs Wires by STM under Dual Light Illumination |
IIS 1, INQIE 2 Univ. of Tokyo@*Katsui Shuichi 1, Takahashi Takuji 1,2 |
|
4 |
Photothermal Spectroscopy by Dual Sampling AFM on Cleaved (110) Surface of GaAs/AlGaAs Quantum Wells |
IIS 1 & INQIE 2, Univ. of Tokyo@*Hara Kenji 1, Takahashi Takuji 1,2 |
|
5 |
Space-time mapping of carrier dynamics in PIN junction using time-resolved STM |
Univ. of Tsukuba 1, CREST-JST 2@Atsushi Okubo 1, Yasuhiko Terada 1,2, Shoji Yoshida 1,2, Osamu Takeuchi 1,2, Hidemi Shigekawa 1,2 |
|
6 |
Developement of spectroscopic method with ps temporal and atomic spatial resolution |
Tohoku Univ.1, NIMS2@*Yoichi Uehara1, Satoshi Katano1, Syota Watanabe1, Tomonori Sanbongi1, Kenji Sakamoto2, Sukekatsu Ushioda2 |
| |
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Break 10:30`10:45 |
|
|
7 |
Study on the factors determining the spatial resolution of STM-cathodoluminescence spectroscopy |
The Univ. of Tokyo 1, Osaka Univ. 2, Northwestern Univ. 3, Dept. of Advanced Materials Science, The Univ. of Tokyo 4@*Kentaro Watanabe 1, Yoshiaki Nakamura 2, Shigeyuki Kuboya 3, Ryuji Katayama 4, Kentaro Onabe 4, Masakazu Ichikawa 1 |
|
8 |
STM-luminescence from organic-LED structures consisted of deposited organic multi layers |
Inst. of Appl. Phys. Univ. of Tsukuba 1, CREST-JST 2,@Okawa Naohiro 1,2,Okada Arifumi 1,2,*Ken Kanazawa 1,2,Hayashi Kiwamu 1,2,Takeuchi Osamu 1,2.Shigekawa Hidemi 1,2 |
|
9 |
Thickness dependence of Surface States around Step Edges and Dislocations on the Ultra thin Ag Film Surfaces |
Tokyo Tech 1@*Sawa Keiichi 1, Aoki Yuki 1, Hirayama Hiroyuki 1 |
| £ |
10 |
STM/STS study of Self-assembled structure of glycine molecules on Cu(111) surface |
Institute of Applied Physics, Univ. of Tsukuba, CREST-JST@*Hui Huang 1, Ken Kanazawa 1, Atsushi Taninaka 1, Osamu Takeuchi 1 and Hidemi Shigekawa 1 |
|
11 |
Observation of copper 2,9,16,23-tetra tert-butyl phthalocyanine on graphite surface by scanning tunneling microscopy |
Washington State Univ.@Takami Tomohide, Carrizales Clarisa, Hipps K.W. |
| |
|
Lunch 12:00`13:00 |
|
| 30p-TE-@/ II |
|
1 |
Dynamical Measurement of Single Molecular Conductance by STM Point Contact Method |
Tsukuba Univ. 1,AIST. 2@Keisuke Ishii 1,Shoji Yoshida 1,Yoshitaka Okutsu 1,Tohru Nakamura 2,Osamu Takeuchi 1,Hidemi Shigekawa1 |
|
2 |
Conduction of DNA molecules probed by simultaneous measurement of STM and NC-AFM |
AIST 1, ISIR Osaka Univ. 2@*Maeda Yasushi 1, Kohyama Masanori 1, Matsumoto Takuya 2, Kawai Tomoji 2 |
| £ |
3 |
Metal Deposition on the Si(110) Surface |
Toyota Technological Inst. @*Ian Thomas Clark 1, Daiki Matsuoka 1, Masamichi Yoshimura 1, Kazuyuki Ueda 1 |
|
4 |
Study of Ga nano-wire on Ni/Si(100)2~n surface structure |
Tokyo univ. of Science 1, Tokyo univ. of Science 2@*Fuse Kazuhiro 1, Takahashi Issei 1, Hara Shinsuke 1, Irokawa Katsumi 2, Kawazu Akira 2, Miki Hirofumi 2, Fujishiro Hiroki 1 |
|
5 |
Study of the atom desorption on H/Si(113) surface by STM lithography technique |
Tokyo Univ. of Science 1,Tokyo Univ. of Science 2@*Suzuki Toru 1,Ohsumi Takaki 1,Hara Shinsuke 1,Irokawa Katsumi 2,Kawazu Akira 2,Miki Hirofumi 2,Fujisiro Hiroki 1 |
|
6 |
NC-AFM study of a cleaved InAs (110) surface using modified Si probes under ambient atmospheric pressure |
Japan Advanced Institute of Science and Technology1, Shimadzu Corp.2, Kyoto Univ.3, Kanazawa Univ.4@*Y. Jeong1, M. Hirade2,@R. Kokawa2, H. Yamada3, K. Kobayashi3, N. Oyabu3, H. Yamatani4, T. Arai4, A. Sasahara1, M. Tomitori1 |
|
7 |
Fabrication of graphene and its characterization by scanning tunneling microscopy |
Univ. Tokyo@*Miyachi Kosuke 1,Nishio Takahiro 1,Eguchi Toyoaki 1,Hasegawa Yukio 1
|
| |
|
Break 14:45`15:00 |
|
|
8 |
An In Situ STM Study on Degradation of Carbon Support in PEFC Cathode |
NEC Nano Electronics Res. Labs. 1, NEC Device Platforms Res. Labs. 2@*Masashi Matsumoto 1, Takashi Manako 2, Hideto Imai 1 |
|
9 |
Potential dependent images of redox-active molecular islands by FM mode EC-AFM |
Tokyo Tech. 1, Osaka Univ. 2, JST PRESTO 3@*Ken-ichi Umeda 1, Ken-ichi Fukui 1,2,3 |
|
10 |
The Measurements of Interaction between Ti-binding Peptide and Ti Substrate with an Atomic Force Microscope |
Tokyo Inst. of Tech 1, RIKEN Flucto-Oreder. 2@Arai Yuki 1, Hayashi Tomohiro 1,2, Hara Masahiko 1,2 |
|
11 |
Carbon Nanotube Probes with a Nanoscale Electrode at Probe Apex for Electric Measurement in Liquid |
MANA-NIMS 1, Univ. of Tsukuba 2@*Tomimoto Hiroyuki 1, Kuramochi Hiromi 1, Aono Masakazu 1, Nakayama Tomonobu 1,2 |
|
12 |
High Accuracy Microfabrication of Carbon Nanotube Probe |
Materials Research Laboratory, Hitachi, Ltd.1, Hitachi Construction Machinery Co., Ltd.2, Hitachi Kyowa Engineering Co., Ltd.3 @Hirooka Motoyuki 1, Okai Makoto 1, Sekino Satoshi 2, Tanaka Hiroki 3, Uozumi Yuki 3 |
|
13 |
Direct growth of long carbon nanofiber onto W tip induced by ion irradiation |
Nagoya Inst.Technol 1, Toyota Research & Development Center 2@*K. Inaba 1, Y. Sugita 1, M. Tanemura 1, K. Kataoka 2, T. Mitsuoka 2 |
|
14 |
In-situ high-temperature high-resolution SEM observation of SPM tip fabrication using a pencil-type SPM |
JAIST 1, FUJI-IMVAC,INC. 2, Kanazawa Univ. 3, JST SORST 4@Ooishi Naoki 1,Tani Masayasu 2,Sasahara Akira 1,Arai Toyoko 3,4,Tomitori Masahiko 1 |
|
15 |
Development of quartz force sensors for noncontact atomic force microscopy/spectroscopy |
Graduate School of Natural Sci. & Tech. Kanazawa Univ.@*Hori Kenichirou, Arai Toyoko |
| 6.6 Probe Microscopy |
| March 31 9:00`17:30 |
| 31a-TE-@/ II |
|
1 |
Imaging of magnetic-field-induced strains by scanning probe microscopy |
Kansai Univ. 1@Tubota Midori 1, Ichimei Noriyasu 1, Kurata Naoyuki 1, Takata Keiji 1 |
| ’ |
2 |
Electric field driven ferromagnet-antiferromagnet switching in Fe islands on Cu(111) |
Karlsruhe Univ. 1, MPI(Halle) 2@*Yamada Toyokazu 1, Gerhard Lukas 1, Balashov Timofey 1, Takacs Albert 1, Ernst Arthur 2, Wulfhekel Wulf 1 |
| ’ |
3 |
Electrodeposition of ultra sharp silver crystal on the top of STM prove using ionic liquid dissolved AgBF4 |
PRESTO JST 1, Univ. of Tsukuba Institute of Applied Physics@Suzuki Ikumi 1,2, Fujita Jun-ichi 1,2 |
| ’ |
4 |
Observation of Si(110)-16x2 reconstructed structure by using Non-contact Scanning Nonlinear Dielectric Microscopy |
R.I.E.C. Tohoku Univ. 1@Osa Yuhei 1,Kin Nobuhiro 1,Cho Yasuo 1 |
| ’ |
5 |
Simultaneous Measurement of Interaction Force / Tunneling Current at Room Temperature |
Grad. Sch. of Eng., Osaka Univ. 1, PRESTO-JST 2@Daisuke Sawada 1, Yoshiaki Sugimoto 1, Masayuki Abe 1,2, Seizo Morita 1 |
|
6 |
Statistics of room temperature atom manipulation using AFM |
Osaka Univ. 1, PRESTO 2@*Sugimoto Yoshiaki 1, Miki Koutaro 1, Abe Masayuki 1,2, Morita Seizo 1 |
| |
|
Break 10:30`10:45 |
|
| ’ |
7 |
Determination of the optimum imaging parameters for atomic/molecular-resolution FM-AFM |
Dept. of Electronic Sci. & Eng., Kyoto Univ. 1,Innovative Collaboration Center, Kyoto Univ. 2@*Hosokawa Yoshihiro 1, Kobayashi Kei 2, Yamada Hirofumi 1, Matsushige Kazumi 1 |
| ’ |
8 |
Development of two-probe AFM using optical beam deflection method with oblique incidence setup |
Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Innovative Collaboration Center, Kyoto Univ. 2@*Eika Tsunemi 1, Nobuo Satoh 1, Kei Kobayashi 2, Kazumi Matsushige 1, Hirofumi Yamada 1 |
| ’ |
9 |
Investigation of local solvation structure at aqueous solution-TiO2 interface with dynamic force microscopy |
Dept. of Chem., Kobe Univ. 1, JST/Adv. Meas. and Analysis 2, Shimadzu Co., Ltd. 3, Dept. of Electro. Sci. and Eng., Kyoto Univ. 4, Innovative Collaboration Center, Kyoto Univ. 5@@*Takumi Hiasa 1, Kenjiro Kimura 1,2, Hiroshi Onishi 1,2, Masahiro Ohta 2,3, Kazuyuki Watanabe 2,3, Ryohei Kokawa 2,3, Noriaki Oyabu 2,4, Kei Kobayashi 2,5, Hirofumi Yamada 2,4 |
| ’ |
10 |
Development of Wideband Digital Frequency Detector and Its Application to Atomic-Resolution FM-AFM Imaging in Liquid |
Graduate School of Kanazawa Univ. 1, Dept. of Eng. Kanazawa Univ. 2, FSO. Kanazawa Univ. 3, PRESTO/JST 4,@*Mitani Yuji 1,3, Ueda Yasumasa 2,3, Kubo Mamoru 1,2, Muramoto Kenichiro 1,2, Fukuma Takeshi 1,3,4 |
| ’ |
11 |
Surface topography observer with the consideration of output saturation for AM-AFM |
Yokohama National Univ. 1@Shiraishi Takayuki 1, Fujimoto Hiroshi 1 |
| |
|
Lunch 12:00`13:00 |
|
| 31p-TE-@/ II |
|
1 |
Ultra-high-density data storage into C60 thin film |
NIMS 1, Osaka Univ. 2, Univ. of Tsukuba 3@*Nakaya Masato 1, Kuwahara Yuji 2, Aono Masakazu 1, Nakayama Tomonobu 1,3 |
|
2 |
Development of highly-sensitivity surface potential measurement using small amplitude FM-AFM |
Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Innovative Collaboration Center, Kyoto Univ. 2@*Nishi Keisuke B, Hosokawa Yoshihiro D, Kobayasi Kei 2, Yamada Hirohumi 1, Matusige Kazumi 1 |
|
3 |
Development of an UHV-AFM using heterodyne interferometer equipped with photo thermal excitation |
IIS, Univ. of Tokyo 1@*Nakagawa Kazuhisa 1, Kobayashi Dai 1, Hoshi Yasuo 1, Kawakatsu Hideki 1 |
|
4 |
low amplitude liquid dynamic atomic force microscopy using higher vibration modes |
Inst. of Industrial Science, Univ. of Tokyo@*Shuhei Nishida 1, Dai Kobayashi 1, Noriyuki Okabe 1, Hideki Kawakatsu 1 |
|
5 |
Development of frequency modulated magnetic force microscopy (FM-MFM) available for measuring high frequency magnetic field |
Akita Univ. 1, JST/Adv. Meas. & Analysis 2 , Univ. of Twente 3@*Saito Hitoshi 1,2, Siekman Martin 3, Egawa Genta 1,2, Ikeya Hayato 1, Hatakeyama Kodai 1, Ishio Shunji 1, Yoshimura Satoru 1,2 |
|
6 |
Development of multi-probe scanning force microscope |
NIMS 1, HORIBA,Ltd. 2, Univ. of Tsukuba 3@Higuchi Seiji 1,2, Kuramochi Hiromi 1, Shingaya Yoshitaka 1, Nakayama Tomonobu 1,3 |
|
7 |
Development of simultaneous imaging method of viscoelasticity in multifrequency high-speed atomic force microscopy |
Osaka Univ. 1, CREST/JST 2@Takahashi Kohei 1, Li Yan Jun 1,2, Kobayashi Naritaka 1, Naitoh Yoshitaka 1,2, Kageshima Masami 1,2, Sugawara Yasuhiro 1,2 |
|
8 |
Q-Control for High-Speed Phase-Modulation AFM in CA Mode |
Dpt. of Applied Physics, Osaka Uni.1,CREST, JST.2 @*Y.J. Li1,2,
K. Takahashi1, N. Kobayashi1, Y. Naitoh1,2, M. Kageshima1,2, Y. Sugawara1,2 |
|
9 |
NC-AFM measurement in the environment-controlled atmosphere (I) |
Kanazawa Univ. 1,Kyoto Univ. 2,Shimadzu Corp. 3@*Hiroshi Yamatani1,Kita Naoki1,Atai Toyoko1,Oyabu Noriaki2,Kobayashi Kei2,Yamada Hirofumi2,Ota Masahiro3,Kokawa Ryouhei3 |
| |
|
Break 15:15`15:30 |
|
|
10 |
Observations of HOPG Surface by Non-contact Scanning Non-linear Dielectric Microscopy |
RIEC, Tohoku Univ. 1@Shin-ichiro Kobayashi 1 and Yasuo Cho 1 |
|
11 |
Characteristics of Interface between Fullerene molecule and Si Surface by using Non-contact Scanning Non-linear Dielectric Microscopy |
RIEC, Tohoku Univ. 1@Shin-ichiro Kobayashi 1 and Yasuo Cho 1 |
|
12 |
Surface Structure of Rutile TiO2 by Non-contact SNDM |
R.I.E.C Tohoku Univ.@*Nobuhiro Kin1, Yasuo Cho1 |
|
13 |
Development of KPFM-AFM system with a piezo-resistive cantilever |
Osaka Inst 1, NMRC 2@*Kawano Daichi 1, Takaie Kenji 1, Masatoshi Kotera 1,2 |
|
14 |
High-Resolution Imaging and Hydration Structure Measurement of Biomolecules in Liquids by FM-AFM |
Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, JST/Adv. Meas. & Analysis 2, Innovative Collaboration Center, Kyoto Univ. 3, AIST 4@*Shinichiro Ido 1,Kazuhiro Suzuki 1, Noriaki Oyabu 1,2, Kei Kobayashi 2, 3, Kazumi Matsushige 1, Hirofumi Yamada 1, 2, Yoshiki Hirata 4 |
|
15 |
Local solvation structures on various solid surfaces studied by FM-AFM |
Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, JST/Adv. Meas. & Analysis 2 ,Innovative Collaboration Center, Kyoto Univ. 3@*Suzuki Kazuhiro 1, Ido Shinichiro 1, Oyabu Noriaki 1,2, Kobayashi Kei 3, Matsushige Kazumi 1, Yamada Hirofumi 1 |
|
16 |
High-Resolution FM-AFM Imaging of Calcite (10-14) Surface in Liquid |
JST/Adv. Meas. & Analysis 1, Kyoto Univ. 2, Osnabrück Univ. 3, Shimadzu Corp.4, Innovative Collaboration Center Kyoto Univ. 5@*Noriaki Oyabu 1,2, Sebastian Rode 3, Angelika Kühnle 3, Masahiro Ohta 4, Kazuyuki Watanabe 4, Ryohei Kokawa 4, Kei Kobayashi 5, Hirofumi Yamada 2 |
|
17 |
Noncontact Atomic Force Microscope Observation of TiO2
(110) Surfaces in Water |
JAIST 1@*Sasahara Akira 1, Tomitori Masahiko 1 |
| 6.6 Probe Microscopy |
| April 1 9:00`12:00 |
| 1a-TE-@/ II |
|
1 |
Contact characteristics of conductive probe for graphene on SiC |
NTT Basic Research Labs. 1@*Nagase Masao 1, Hibino Hiroki 1, Kageshima Hiroyuki 1, Yamaguchi Hiroshi 1 |
|
2 |
Local Defects of Single Wall Carbon Nanotubes Investigated by Point-by-point Scanning Gate Microscopy |
Kyoto Univ. 1, Innovative Collaboration Center Kyoto Univ. 2@*Nishi Ryuji 1, Miyato Yuji 1, Kobayashi Kei 2, Matsushige Kazumi 1, Yamada Hirofumi 1 |
|
3 |
Deposition of Functional Materials using Nanoinkjet Printing Method |
Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Innovative Collaboration Center, Kyoto Univ. 2@*Kiyohiro Kaisei 1, Kei Kobayashi 2, Hirofumi Yamada 1, Kazumi Matsushige 1 |
|
4 |
Study of Optical Grating Fabrication by Probe Anodization Lithography |
The Univ. of Tokushima 1,CFRE The Univ. of Tokushima 2,Nichia Corp. 3@*Tomoyasu Nakada 1,Yoshinori Nakagawa 2 3,Masanobu Haraguchi 1,Masuo Fukui 1 2,Toshirou Isu 2,Genichi Shinomiya 3 |
|
5 |
Patterning of InAs nanowire by Dip-Pen nanolithography (DPN) |
AIST 1@*Wang Tong 1, Ushijima Hirobumi 1 |
|
6 |
Characterization of surface chemistry on anodic silicon oxide films in liquid |
Yokohama National University@Nakamura Masaya 1, Kashiwase Yuta 1, Ogino Toshio 1 |
| |
|
Break 10:30`10:45 |
|
|
7 |
Dynamic properties analysis of GaAs membrane micro-resonators using scanning probe |
NTT Basic Research Labs. 1, Univ. of Tokyo 2@Tamaru Kojiro 1,2, Nonaka Keiichiro 1,2, *Nagase Masao 1, Yamaguchi Hiroshi 1, Kometani Reo 2, Wariwasa Shin'ichi 2, Ishihara Shunao 2 |
|
8 |
Imaging mechanism of frequency modulation atomic force microscope in attractive force mode for DNA samples in air |
Graduate School of Natural Sci. & Tech. Kanazawa Univ. 1@*Hashimoto Kengo 1,Shimizu Takahiro 1,Arai Toyoko 1 |
|
9 |
Nanomechanical characterization of human hair with HarmoniXTM |
Nihon Veeco K.K. 1@*Misawa Mayumi 1 |
|
10 |
Rheology of Live Cells in Frequency and Time Domains measured by Atomic Force Microscopy |
Graduate School of Information Science & Technology, Hokkaido Univ 1,@RIES, Hokkaido Univ 2@*Hiratsuka Shinichiro 1, Mizutani Yusuke 1, Kawahara Koichi 1, Tokumoto Hiroshi 2, Okajima Takaharu 1 |
|
11 |
Preparation of cell array templates for nanometrology |
MANA-NIMS 1, NMRIT-NIMS 2, Univ. of Tsukuba 3@Hiromi Kuramochi@1, Hiroyuki Tomimoto@1, Chiahsien Chang@2,
Guoping Chen@1,3, Masakazu Aono@1, Tomonobu Nakayama 1,3
|