| 6 Thin Films and Surfaces |
| 6.1 Ferroelectric Films |
| March 17 9:30`18:15 |
| 17a-TR - 1`11 |
| ’ | 1 | An Analysis of Effects of Oxygen Vacancy on BaTiO3 by Using UAQCMD | Grad.Sch.Eng.,Tohoku Univ. 1,NICHE,Tohoku Univ. 2@*Kenji Kondou 1,Ryuji Miura 1,Ai Suzuki 2,Hideki Tsuboi 1,Nozomu Hatakeyama 1,
Akira Endou 1,Hiromitu Takaba 1,Momoji Kubo 1,Akira Miyamoto 1,2 |
| ’ | 2 | Estimation of Ferroelecticity from Soft-mode using Polar-Axis Oriented Strain-free Epitaxial Tetragonal Pb(Zr,Ti)O3 Thick Films. | Tokyo Tech. 1,AIST 2@Ehara Yoshitaka 1,Utsugi Satoru 1,Nakajima Mitsumasa 1,Yamada Tomoaki 1,Iijima Takashi 2,Funakubo Hiroshi 1 |
| 3 | Coherent phonon measurement of PbTiO3 | MSL TokyoTech 1.IEM TokyoTech 2.@*Koguchi Hiroaki 1,2.Takahashi Hiroshi 1,2.Nakajima Mitsumasa 2.Utsugi Satoru 2.Funakubo Hirosi 2.Nakamura G Kazutaka 1,2. |
| ’ | 4 | Observation of soft-mode hardening in three-axis oriented SrTiO3 thin films deposited on Pt/MgO substrate by using terahertz time-domain spectroscopic ellipsometry | Murata Manufacturing1, Inst. of Laser Engineering Osaka Univ2@*Naoki Matsumoto1,2, Tadasu Hosokura1, Takeshi Nagashima2, Masanori Hangyo2 |
| 5 | Effect of leakage current on photovoltaic properties of Pb(Zr,Ti)O3 thin films | Nagoya Institute of Technology@Masayuki Matsuyama, Manabu Gomi, Takeshi Yokota |
| | | Break 10:45`11:00 | |
| 6 | Conduction Properties of Charge Ordering Type Ferroelectric YbFe2O4 Epitaxial Thin Films | Osaka Prefecture Univ.,@*Hirose Koji , Yoshimura Takeshi , Ashida Atsushi , Fujimura Norifumi |
| 7 | Epitaxial growth of YbFe2O4 thin films on Pt electrode and the electrical property | Osaka Prefecture Univ.@*Yukawa Hiroki, Hirose Koji, Yoshimura Takeshi, Ashida Atsushi, Fujimura Norifumi |
| 8 | Synthesis of Triangular Lattice Antiferromagnet InFe2O4 Epitaxial Thin Films and Their Magnetic/Electronic Poperties
| Univ. of Tokyo 1@*Seki Munetoshi 1, Iwamoto Fujiyuki 1, Ono Yousuke 1, Tabata Hitoshi 1 |
| ’ | 9 | Observation of domain structure of NaNbO3 film by laser beam scanning microscopy | Ryukoku Univ. 1@*Yamazoe Seiji 1, Sakurai Hiroyuki 1, Wada Takahiro 1 |
| ’ | 10 | Polarization switching current measurements of PbTiO3 thin films and nanoislands by AFM(II) | Univ.Hyogo 1@*Yamada Kosei 1,Seioh Yoshihiro 1,Nakashima Seiji 1,Fujisawa Hironori 1,Shimizu Masaru 1 |
| 11 | In-situ observation of domain formation in PbTiO3 film using Raman spectroscopy | Kochi Univ. of Tech. 1, Nat. Def. Acad. 2, Tokyo Inst. of Tech. 3@*Masamichi Nishide 1, Masashi Matsuoka 1, Takeshi Tai 1, Ken Nishida 2, Takashi Yamamoto 2, Hiroshi Funakubo 3, Takashi Katoda 1 |
| | | Lunch 12:30`13:30 | |
| 17p-TR - 1`18 |
| 1 | Fabrication of PbTiO3 nanocrystal array structure on atomically flat sapphire and their evaluation | NAIST 1, JAEA 2, NIMS 3, CREST 4@*Takashi Nishida 1, Yasuhiro Yoneda 2, Kazuhisa Tamura 2, Daiju Matsumura 2, Hideo Kimura 3, Masahiro Horita 1, Mutsunori Uenuma 1,4, Kiyoshi Uchiyama 1, Yukiharu Uraoka 1,4 |
| ’ | 2 | Fabrication of PZT/ZnO nanorods by MOCVD method (II) | Univ. Hyogo 1,Fujitsu Lab.Ltd 2@Imi Yasunori 1,Kuri Ryohei 1,Nakashima Seiji 1,Fujisawa Hironori 1,Shimizu Masaru 1,Kotaka Yasutoshi 2,Honda Koichiro 2 |
| ’ | 3 | Evaluation of Crystal Structure and Electrical Properties of Epitaxial BiFeO3 Thin Films with Orientation Control | Tokyo University of Science 1, Tohoku University 2@*Sone Keita 1, Naganuma Hiroshi 2, Nakajima Takashi 1, Okamura Soichiro 1 |
| 4 | Preparation and Characterization of BiFeO3 Thin Film on ITO substrate by PLD | Osaka Univ. 1, Inst.For@NanoScience@Design,@Osaka@Univ2AUniv. Hyogo 3@*J.M. Park1, F. Gotoda1, S. Nakashima3, T. Kanashima1, M. Okuyama2 |
| 5 | Preparation and Characterization of BiFeO3 Thin Films Prepared by IBS | Univ. of Hyogo 1, Osaka Univ. 2@*Tsujita Yousuke 1, Kayahara Satoshi 1, Nakashima Seiji 1, Fujisawa Hironori 1, Park Jung Min 2, Kanashima Takeshi 2, Okuyama Masanori 2, Shimizu Masaru 1 |
| 6 | Characteristics of Mn-doped BiFeO3 films formed on bottom LaNiO3/Pt(111) and SrRuO3/Pt(111) electrodes by rf-sputtering | Tokyo Institute of Technology 1, Fujitsu Laboratories Ltd. 2@Jeong Hwan Kim 1, Hiroshi Funakubo 1, Yoshihiro Sugiyama 2, Hiroshi Ishiwara 1 |
| 7 | Characterization of ferroelectric and insulation properties of Cr ?doped BiFeO3 thin
films formed on bottom Pt,LaNiO3 , SrRuO3 electrodes by sputtering. | Tokyo Instute of Technology.1@Furukawa Susumu 1,Kim Jeong Hwan 1,Funakubo Hiroshi 1,Ishiwara Hiroshi 1 |
| 8 | Fabrication and characterization of Pr and Mn co-doped BiFeO3 thin films by chemical solution deposition | Fac. of Eng. Kanazawa Univ. 1,Grad. School of Natural Sci. & Tech. Kanazawa Univ. 2,Tokyo University of Science 3@*Nakai Hirokazu 1,Hashimoto Takuya 1,Terauchi Yuki 2,Nakajima Takeshi 3,Kawae Takeshi 2,Okamura Soishiro 3,Morimoto Akiharu 2 |
| | | Break 15:30`15:45 | |
| 9 | First principles calculation study for the origin of tetragonality of BiCoO3 | FUJIFILM Corporation@*Okuno Yukihiro, Sakashita Yukio |
| ’ | 10 | Preparation and characterization of (1-x)BiFeO3-xBiCoO3 thin films with a large tetragonal distortion
| ICR, Kyoto Univ.@*Yoshitaka Nakamura 1, Masanori Kawai 1, Masaki Azuma 1, Yuichi Shimakawa 1 |
| 11 | XRD Evaluations of Crystalline Properties of Bi1.1Fe0.9Co0.1O3 Thin Film | Kyoto Inst. Tech.1, Bruker AXS2, Osaka Univ.3@Minoru Noda1,3, Keisuke Saito2,
Nguyen Truong Tho3, Kaoru Yamashita1,3, Masanori Okuyama3
|
| 12 | Effect of Lattice Mismatch Strain on Ferroelectric Property of BiFeO3 Epitaxial Thin Films | Graduate School of Engineering@Osaka Pref. Univ. 1@*Ujimoto Katsuya 1,Yoshimura Takeshi 1,fujimura norifumi |
| 13 | Fabrication and Characterization of Multiferroic BiFeO3-BaTiO3 Thin Films | EcoTpoia Sci. Inst., Nagoya Univ. 1@*Wataru Sakamoto@1, Yuya Ito@1, Makoto Moriya@1, Toshinobu Yogo@1
|
| ’ | 14 | Control of Tetragonality in Epitaxial Bi(Zn1/2
Ti1/2)O3-BiFeO3 Thin Films | Tokyo Tech. 1, Bruker AXS 2, Sophia Univ. 3@Shintaro Yasui 1, Keisuke Yazawa 1, Tomoaki Yamada 1, Hitoshi Morioka 1,2,Hiroshi Uchida 3, Hiroshi Funakubo 1 |
| 15 | Crystallization of BiFeO3-Bi(Ti,Mg)O3 Thin Films with in-situ Laser Irradiation | Hyogo Pref. Inst. of Tech. 1, Osaka Pref. Univ. 2@*Hirokazu Izumi 1, Katsuya Ujimoto 2, Takeshi Yoshimura 2, Norifumi Fujimura 2 |
| 16 | Fabrication of Bi1Nd0.05Fe0.97Mn0.03O3/Pt/CoFe2O4 layered thin film prepared by pulsed laser deposition and their ferroelectric/magnetic properties | Grad. School of Natural Sci. & Tech. Kanazawa Univ.@1, Dept. of Appl. Phys. Grad. School of Eng. Tohoku Univ. 2, Dept. of Appl. Phys. Fac. of Sci. Tokyo Univ. of Sci. 3, NIMS 4@Jie Hu 1, Takeshi Kawae 1, Hiroshi Naganumu 2, Takeshi Nakajima 3, Yuki Terauchi 1, Tae Young Kim 4, Yasuo Ando 2, Soichiro Okamura 3, Akiharu Morimoto 1 |
| 17 | Characterization of ferroelectric properties in Pr and Mn co-doped BiFeO3 thin films at low temperature | Grad. School of Natural Sci. & Tech. Kanazawa Univ1,Ishikawa National College of Tech 2@*Yukihiro Nomura 1,Yuki Terauchi 1,Takeshi Kawae 1,Satoru Yamada 2,Akiharu Morimoto 1 |
| ’ | 18 | Ferroelectric Polarization Domain Dynamics of MagnetoFerroelectric YMnO3 Film at around TN | Osaka Prefecture Univ.1, JSPS research fellow 2@*Maeda Kazuhiro 1,2, Yoshimura Takeshi 1, Fujimura Norifumi 1 |
| 6.1 Ferroelectric Films |
| March 18 10:00`18:30 |
| 18a-TR - 1`11 |
| 1 | Influence of Reaction Temperature on Structure of PbTiO3 Film Synthesized by Hydrothermal Method | UBE Scientific Analysis Laboratory, Inc. 1, Graduate School of Science and Engineering, Yamaguchi Univ. 2@Nii Hiroyuki 1,2, Kunishige Atsuhiro 1, Nakagawa Hamazo 1, Koyanagi Tsuyoshi 2 |
| 2 | Crystal structure and Ferroelecticity in Epitaxial Pb(Zr,Ti)O3 Films with Rhombohedral Composition Grown on CaF2 Substrates. | Tokyo Tech 1,Bruker AXS 2@Ehara Yoshitaka 1,Utsugi Satoru 1,Nakajima Mitsumasa 1, Morioka Hitoshi 1 2,Yamada Tomoaki 1,Funakubo Hiroshi 1 |
| ’ | 3 | PbTiO3 thin films on SrTiO3(001) vicinal substrate | Univ.Hyogo 1@*Yane Hiroaki 1,Nagasoe Ryo 1,Hiki Yukio 1,Nakashima Seiji 1,Fujisawa Hironori 1,Shimizu Masaru 1 |
| 4 | Characterization of PZT Films Prepared by Automatic Sol-gel Deposition System | Tohoku Univ.@*Moriwaki Nobuyoshi 1,Kawai Yusuke 1,Ono Takahito 1,Esashi Masayoshi 1 |
| ’ | 5 | Orientation Control of Epitaxial KNbO3 Thin Films by Hydrothermal Method | Tokyo tech.@*Hiro Einishi, Mutsuo ishikawa, Mitumasa Nakajima, Sintaro Yasui, Tomoaki Yamada, Minoru Kurosawa, Hiroshi Funakubo |
| | | Break 11:15`11:30 | |
| 6 | Orientation dependence of dielectric properties in strained epitaxial (Ba,Sr)TiO3 films | Tokyo Tech. 1, AIST 2@*Tomoaki Yamada 1, Itaru Takuwa 1, Takafumi Kamo 1, Takashi Iijima 2, Hiroshi Funakubo 1 |
| ’ | 7 | Evaluation of ferroelectric BaTi2O5 thick film fabricated by electrophoretic deposition | Tokyo Univ. of Sci. 1, AIST 2@Nishimura Kazuhiro 1, Shima Hiromi 1, Lee Bong-Yeon 2, Iijima Takashi 2,
Nakajima Takashi 1, Okamura Soichiro 1
|
| 8 | Morphology and electrical property controls of (Ba,Sr)TiO3 dielectric thin film with an easily decomposable sol-gel precursor | Central Research Inst. Mitsubishi Materials Corp.1,Sanda Plant Mitsubishi Materials Corp.2@*Watanabe Toshiaki 1,2,Sakurai Hideaki 1,Soyama Nobuyuki 2 |
| ’ | 9 | Crystal structure and Electrical property in BaTiO3-Bi(Mg0.5Ti0.5)O3 epitaxial thin film Grown by PLD | Tokyo Tech.1,Yamanashi Univ.2,AIST.3,Sophia Univ.4,TUS.5@Tanaka hidenor 1,Yamada Tomoaki 1,Yasui Shintaro 1,Yamato Keisuke 2,Kashiwagi Yuta 3,5,Okamura Souichiro 5, Uchida Hiroshi 4, Iijima Takashi 3, Wada Satoshi 2,
Funakubo Hiroshi 1 |
| 10 | Dielectric properties of MBi4Ti4O15 (M = Ca, Sr) films at high-temperature region | Sophia Univ. 1, Kyoto Inst. Technol. 2, Tokyo Inst. Technol. 3@Yuki Mizutani 1, *Hiroshi Uchida 1, Minoru Noda 2 and Hiroshi Funakubo 3 |
| 11 | Stability Improvement of Inkjet Printer Ink for Ferroelectric Materials | Shibaura Inst. of Tech. 1.@Oba Tomohiro 1, Maeta Shinya 1, *Yamaguchi Masaki |
| | | Lunch 13:00`14:00 | |
| 18p-TR - 1`17 |
| 1 | Fabrication of Oxide-Channel Thin Film Transistor by Sol-Gel Technique | Tokyo Tech. P&I Lab. 1@*Yusaku Okumura 1, Eisuke Tokumitsu 1
|
| £ | 2 | IGZO-channel non-volatile memory TFTs with ferroelectric polymer | Precision and Intelligence Lab, Tokyo Inst of Tech 1,
Electronics And Telecommunications Res. Inst.(ETRI)2,@
Interdisciplinary Graduate School of Science and Engineering, Tokyo Inst of Tech3,
Central Research Laboratory, Hitachi Ltd, Tokyo4
@Gwang-Geun Lee1, Sung-Min Yoon2, Joo-Won Yoon3, Yoshihisa Fujisaki4,
Hiroshi Ishiwara3 and Eisuke Tokumitsu1
|
| 3 | Fabrication and Characterization of MFS capacitor composed of Au/BNFM/Nb:STO structure | Grad. School of Natural Sci. & Tech. Kanazawa Univ. 1, Fac. of Eng. Kanazawa Univ. 2@*Ali FaraAshikin 1, Nagata Jyunichi 2, Nomura Yukihiro 1, Kawae Takeshi 1, Morimoto Akiharu 1 |
| 4 | Characteristics of ferroelectric-gate transistors using single crystalline SrTiO3 buffer layers II | Tokyo Tech. 1, ETRI 2@*Kasahara Naoya 1, Yoon Sung-Min 1,2, Mabuchi Takaya 1, Inoue Kazuhiko 1, Ishiwara Hiroshi 1 |
| 5 | Solvent dependence of degradation of Pentacene by overcoating of P(VDF-TrFE). | Tokyo Tech.IGSSE 1,ETRI 2@*Mabuchi Takaya 1,Sung-Min Yoon 1,2 ,Ishiwara Hiroshi 1 |
| 6 | Preparation and characterization of ultra thin P(VDF-TeFE) film and
its application for memory FET | Osaka Univ. 1, Osaka Univ. 2@Watanabe Tomohiro 1, *Kanashima Takeshi 1, Okuyama Masanori 2 |
| ’ | 7 | Switching Characteristics of ferroelectric polymer with organic semiconductor layer | Tokyo Univ. of Sci. 1@*Nakajima Takashi 1, Nakamura Marika 1, Furukawa Takeo 1, Okamura Soichiro 1 |
| 8 | Electrical characteristics of p-ch Si MFIS-FETs using P(VDF-TrFE) thin films | Tokyo Tech, Japan. 1, Electronic & Telecommunications Research Institute (ETRI), Korea. 2@Yoon Joo-Won1, Yoon Sung-Min1,2, Ishiwara Hiroshi1 |
| | | Break 16:00`16:15 | |
| 9 | Fabrication and characterization of MFIS structure using (Bi1.0Pr0.10)(Fe0.97Mn0.03)O3 | Grad. School of Natural Sci. & Tech. Kanazawa Univ. 1,Fac. of Eng. Kanazawa Univ. 2@*Nishioka Naoki 1,Hashimoto Takuya 2,Inosaka Naoya 1,Terauchi Yuki 1,Nakai Hirokazu 2,Kawae Takeshi 1,Sasaki Kimihiro 1,Morimoto Akiharu 1
|
| £ | 10 | Stability of multiple-value memory states in PZT ferroelectric capacitors | Osaka Univ. 1,2@Nicastro Damian 1, *Ricinschi Dan 1, Kanashima Takeshi 1, Okuyama Masanori 2 |
| 11 | Ferroelectric Memristor using a ZnO/PZT Stacked Structure | Advanced Technology Research Lab., Panasonic Corp.@*Kaneko Yukihiro 1, Tanaka Hiroyuki 1, Ueda Michihito 1, Fujii Eiji 1 |
| 12 | Device Characterization of controlled polarization type ferroelectric-gate TFT | Osaka Prefecture Univ 1@*Tadahiro Fukushima 1, Takeshi Yoshimura 1, Kazuhiro Maeda 1, Atsushi Ashida, Norifumi Fujimura 1 |
| 13 | Fabrication of ferroelectric gate transistor with ZnO nanorods as a channel (III) | Univ.Hyogo 1@*Noda Masaki 1,Suzuki Yasunari 1,Kuri Ryouhei 1,Imi Yasunori 1,Nakashima Seiji 1,Fujisawa Hironori 1,Shimizu Masaru 1 |
| 14 | Fabrication and its Study of Ferroelectric Discrete Recording Media | RIEC. Tohoku Univ.@*N. Sumiyama, Y. Hiranaga and Y. Cho |
| ’ | 15 | The Study of Tracking Control on Ferroelectric Data Storage System | Tohoku UNIV. 1@*Kenkou Tanaka 1, Yasuo Cho 1 |
| ’ | 16 | Development of multi element high-k dielectric films for gigabit DRAM capacitors | RNBS Hiroshima Univ. 1@*Masaki Yamato 1, Takamaro Kikkawa 1 |
| ’ | 17 | Selective epitaxial growth of Α-Al2O3(001) for ferroelectric film sensor | Toyohashi Univ. of Tech. 1, VBL 2, JST-CREST 3@*K. Oishi 1, T. Sugai 1, M. Ozawa 1, D. Akai 2 and M. Ishida 1,3 |
| 6.1 Ferroelectric Films |
| March 19 9:00`12:00 |
| 19a-TL - 1`11 |
| 1 | Evaluation of the Mechanical Properties of Ultra-thin Al2O3 Film on Si Substrate Using NanoIndentation | Omicron Nanotechnology Japan1
Advanced Industrial Science and Technology2@Thithi Lay1,Okawa Toshiro1,Kitamura Yujii1,Yoshihara Kazuhiro1
Nobuyuki Matsubayashi2, Motoyasu Imamura2, Iso Kojima2 |
| 2 | High frequency piezoelectric displacement of PZT thin films measured by twin laser doppler vibrometer | National Institute of Advanced Industrial Science and Technology (AIST)@*Bong Yeon Lee1, Takashi Iijima1, Seiji Fukuyama1 |
| 3 | Geometric Phase Analysis of Local Strain Field around 90B Domains in PbTiO3 Thin Film | IMR Tohoku Univ. 1, Tohoku Univ. 2, Tokyo Tech. 3@*Takanori Kiguchi 1, Toyohiko J. Konno 1, Kenta Aoyagi 2, Satoru Utsugi 3, Tomoaki Yamada 3, Hiroshi Funakubo 3 |
| 4 | Direct Piezoelectricity of Ferroelectric Films and Application to Vibration Energy Harvesting | Osaka Prefecture Univ. 1,TRI-Osaka 2@*Miyabuchi Hiroki 1,Yoshimura Takeshi 1,Murakami Shuichi 2,Fujimura Norifumi 1 |
| 5 | Orientation dependence of shear-mode piezoelectric properties for epitaxial PZT thin films | Kyoto Univ. 1@*Akama Kenji 1,Kanno Isaku 1,Wasa Kiyotaka 1,Kotera Hidetoshi 1 |
| | | Break 10:15`10:30 | |
| 6 | Crystal structures and piezoelectric properties of orientation controlled BaTiO3 films | Kyoto Univ. 1@*Imai Hideyuki 1, Kanno Isaku 1, Wasa Kiyotaka 1, Kotera Hidetoshi 1 |
| 7 | Fabrication of NaNbO3 thin films on Si substrate by pulsed laser deposition | Ryukoku Univ. 1@*Masaki Fukada 1, Seiji Yamazoe 1, Takahiro Wada 1 |
| 8 | Fabrication of (Na0.5K0.5)NbO3-BaZrO3-(Bi0.5Li0.5)TiO3 Lead-Free Piezoelectric Thin Films by Pulsed Laser Deposition
| Ryukoku University 1@*Miyoshi Yuzo 1,Hattori takafumi 1, Yamazoe Seiji 1,Wada Takahiro 1 |
| 9 | Piezoelectric properties of c-axis oriented (K,Na)NbO3 film deposited by sputtering | Hitachi Cable, Ltd. 1@*Shibata Kenji 1,Suenaga Kazufumi 1,Watanabe Kazutoshi 1,Horikiri Fumimasa 1,Nomoto Akira 1,Mishima Tomoyoshi 1 |
| 10 | Crystal lattice strain and piezoelectric properties for (K,Na)NbO3 films with c-axis preferred orientation | Hitachi Cable, Ltd. 1@*Suenaga Kazufumi 1, Shibata Kenji 1, Watanabe Kazutoshi 1, Nomoto Akira 1, Horikiri Fumimasa 1, Mishima Tomoyoshi 1 |
| ’ | 11 | Fabrication of AgNbO3 Thin Films Deposited on (001), (110), and (111) SrTiO3 by PLD | Ryukoku Univ. 1@*Sakurai Hiroyuki 1, Yamazoe Seiji 1, Wada Takahiro 1
|
| 6.2 Carbon Films |
| March 18 10:00`18:30 |
| 18a-TV - 1`11 |
| ’ | 1 |
Growth of epitaxial diamond thin film on iridium / sapphire substrate II |
Aoyama gakuin Univ. 1, TOPLAS ENGINEERING Co., Ltd. 2, NAMIKI PRECISION JEWEL Co., Ltd. 3@*Daisuke Kumaki 1, Hideyuki Kodama 1, Kazuhiro Suzuki 2, Toshiro Kotaki 3, Atsuhito Sawabe 1 |
| 2 | Defect examination of heteroepitaxial diamond by etch pit method | Aoyama Gakuin Univ. 1,TOPLAS ENGINEERING CO. 2@*Ichikawa Kimiyoshi 1,Hideyuki Kodama 1,Kazuhiro Suzuki 2,Atsuhito Sawabe 1 |
| ’ | 3 | Improvement of electrical properties of boron doped heteroepitaxial diamond introducing intermediate layer with low methane concentration | Aoyama Gakuin Univ. 1,TOPLAS ENGINEERING CO., LTD 2@Ohito Chino1 ,Hideyuki Kodama1 ,Satoshi Abe1 ,Yamasaki Kota1 ,Kazuhiro Suzuki2 ,
Atsuhito Sawabe1 |
| ’ | 4 | Characterization of cathodoluminescence in B doped heteroepitaxial diamond | Aoyama Gakuin Univ., 1, TOPLAS ENGINEERING CO., LTD 2, NIMS 3@*Kota Yamasaki 1,Hideyuki Kodoma 1,Kazuhiro Suzuki 2, Tokuyuki Teraji 3,Astuhito Sawabe 1 |
| ’ | 5 | Growth of phosphorus doped n-type heteroepitaxial diamond by dc plasma chemical vapor deposition II |
Aoyama Gakuin Univ. 1, TOPLAS ENG. 2, NIMS 3,@*Satoshi Abe1, Hideyuki Kodama1, Kazuhiro Suzuki2, Tokuyuki Teraji3, Satoshi Koizumi3 and Atsuhito Sawabe1
|
| | | Break 11:15`11:30 | |
| 6 | On board diamond PIN photodiodes for the solar observatory satellite | NIMS 1, ROB 2, Univ. of Hasselt 3@Koizumi Satoshi 1CBenMoussa Ali 2CHaenen Ken 3CNesladek Milos 3 |
| 7 | Mechanism of persistent photoconductivity and photoconductivity gain for diamond ultraviolet photosensor, II | NIMS 1, LEGP/CNRS 2,@Koide Yasuo 1, Liao Meiyong 1, Imura Masataka 1, Alvarez Jose 2, Kleider Jean-Paul 2 |
| 8 | Evaluation of diamond radiation detectors combined with heavy elements | Osaka Univ. 1, Aloka Co., Ltd. 2@*Sato Hidenori 1,2, Inoue Takahiro 1, Maida Osamu 1, Ito Toshimichi 1 |
| 9 | Radiation tolerance of diamond Schottky diodes | Toshiba Corp. R&D Center, Hokkaido Univ.@Suzuki Mariko 1, Sakai Tadashi 1, Kaneko Junichi 2 |
| 10 | Single-crystal-diamond substrate with inch-size area made by coalescence of plural diamond pieces
| DRC AIST 1@*Hideaki Yamada 1, Akiyoshi Chayahara 1, Yoshiaki Mokuno 1, Nobuteru Tsubouchi 1, Shin-ichi Shikata 1, and Naoji Fujimori 1 |
| 11 | Evaluation of stress of thick homoepitaxical single crystal diamond film@by interference spectroscopy
| AIST@Diamond Research Center@Feng Zongbao |
| | | Lunch 13:00`14:00 | |
| 18p-TV - 1`17 |
| 1 | Evaluation of crystal quality of a large self-standing homoepitaxial diamond film (II) | AIST DRC 1, AIST NRI 2@*Nobuteru Tsubouchi 1, Yoshiaki Mokuno 1, Hitoshi Umezawa 1, Hirotaka Yamaguchi 2, Akiyoshi Chayahara 1, Shinichi Shikata 1 |
| 2 | Relation between Growth Hillock and Threading Dislocation in CVD Diamond | NTT Basic Research Labs. 1@*Kasu Makoto 1 |
| 3 | Structure Analysis of P-Doped CVD Diamond-Electrode Interface Using HRTEM | Graduate School of Engineering, Osaka Univ.@*Naofumi Hayashi, Osamu Maida, Toshimichi Ito |
| 4 | Surface modification study on Ga-FIB irradiated Diamond | AIST1@Somu Kumaragurubaran1, Takatoshi Yamada1, Shin-ichi Shikata1 |
| 5 | RBS analysis of Au/Ti and Au/Pt/Ti films deposited on diamond substrates | Kanagawa Univ. 1@*Hoshino Yasusi 1,Kato Ken-ichi 1, Saito Yasunao 1, Nakata Jyoji 1 |
| 6 | High Sensitivity Quantitative Analysis of Nitrogen in Diamond by Using FT-ESR | Tsukuba Univ. 1, Tokyo Gas 2, SEI 3, NIMS 4,@*Isoya Junichi 1, Nakamura Kazuo 2, Sumiya Hitoshi 3, Taniguchi Takashi 4, Kanda Hisao Sumiya Hitoshi 3, Taniguchi Takashi 4, Kanda Hisao 4 |
| 7 | Synthesis of diamond related thin films and measurement of thermal conductivity | AIST, Diamond RC1, NIMJ 2,@Y.Yun1, T.Yamada1, S.Shikata1, T.Yagi2, N.Taketoshi2, N.Yamada2 |
| 8 | Characterization of temperature distribution on a diamond wafer under a forward bias operation of a Schottky barrier diode. | AIST DRC@Hitoshi Umezawa, Shin-ichi Shikata |
| 9 | Diamond Mott diodes | NIMS 1@*TERAJI Tokuyuki 1, KOIDE Yasuo 1 |
| | | Break 16:15`16:30 | |
| ’ | 10 | Surface distribution of electron emission from vapor phase deposited diamond particles | Inst. Indust. Sci., The Univ. of Tokyo.@*Nose Kenji 1, Mitsuda Yoshitaka 1 |
| 11 | Electron Emission from n-type Diamond Film Surfaces with Negative Electron Affinity by Current Injection | AIST-ETRI 1, Univ. Tsukuba 2@Takeuchi Daisuke 1, Makino Toshiharu 1, Kato Hiromitsu 1, Hirabayashi Izumi 1, Okushi Hideyo 1, Yamasaki Satoshi 1,2 |
| 12 | Sorption Properties of NO2 Gas and its Strong Influence on Hole Concentration of H-terminated Diamond | NTT Basic Research Labs. 1@ *Kasu Makoto 1, Kubovic Michal 1 |
| ’ | 13 | Improvement of output characteristics for H-terminated diamond MOSFETs by PTFE coating | waseda Univ. 1@*Sato Shunsuke 1,Tsuge Kyosuke 1,Tsuno Tetsuya 1,Ono Tasuku 1,Kawarada Hirosi 1 |
| ’ | 14 | Si Terminated Diamond | Waseda Univ.@*Ono Tasuku, Tsuno Tetsuya, Ishiyama Yuichro, Ishii Youko, Sato Shunsuke, Kawarada Hiroshi |
| 15 | Growth of AlN on diamond substrates with different crystal planes | NIMS 1, Meijo Univ. 2@*Masataka Imura 1, Kiyomi Nakajima 1, Meiyong Liao 1, Yasuo Koide 1, and Hiroshi Amano 2 |
| £ | 16 | Integration of piezoelectric Pb (Ti0.52, Zr0.48)O3 on single crystal diamond | National Institute for Materials Science@ Meiyong Liao, Kiyomi Nakajima, Masataka Imura, Yasuo Koide |
| £ | 17 | Diamond/PZT junction as metal-piezoelectric-insulator-semiconductor capacitor and related device properties | National Institute for Materials Science@*Meiyong Liao, Masataka Imura, Yasuo Koide |
| 6.2 Carbon Films |
| March 19 10:00`18:30 |
| 19a-TV - 1`10 |
| 1 | Observation of n-type Conduction in Arsenic-doped CVD Homoepitaxial Diamond | NTT Basic Research Labs. 1@*Kasu Makoto 1 |
| 2 | Functioning of boron-doped CVD diamond with nanostructure | Graduate School of Engineering, Osaka Univ.,@*Aono Masayuki 1,Maida Osamu 1,Ito Toshimichi 1 |
| 3 | Preparation of heavily boron doped diamond films from liquid precursors using a hot filament CVD method | Okayama Univ@1, JST-CREST 2@Doi Tomoaki 1, Fukaishi Tsubasa 1, Hirai Masaaki 1, Muraoka Yuuji 1 2, Yokoya Takayoshi 1 2 |
| 4 | Improvement of (001)-oriented stack PIN diode characteristics by use of selective grown n+ diamond | AIST 1, Univ. of Kanazawa 2, Univ. of Tsukuba 3@*Hiromitsu Kato 1, Toshiharu Makino 1, Masahiko Ogura 1, Norio Tokuda 1,2, Kazuhiro Oyama 1,3, Daisuke Takeuchi 1, Hideyo Okushi 1, Satoshi Yamasaki 1,3 |
| 5 | Diamond Schottky-pn diode with lower specific on-resistance and higher blocking voltage
| AIST 1, Kanazawa Univ. 2, Univ. of Tsukuba 3@Toshiharu Makino 1, Hiromitsu Kato 1, Norio Tokuda 2, Masahiko Ogura 1, Daisuke Takeuchi 1, Kazuhiro Oyama 1,3, Hideyo Okushi 1, Satoshi Yamasaki 1,3 |
| | | Break 11:15`11:30 | |
| 6 | Synthesis of amorphous carbon nanofibers from carbon particles by ultrasonic spray pyrolysis method
| Nagoya Inst. of Tech.@*Jianhui Zhang 1, Ishwor Khatri 1, Naoki Kishi 1, Tetsuo Soga 1, Takashi Jimbo1 |
| 7 | Synthesis of Carbon Film Employing Radical-Injection Plasma-Enhanced Chemical Vapor Deposition (RI-PECVD) | Dept. of Electrical Engineering and Computer Science, Nagoya Univ. 1, Plasma Nanotechnology Research Center, Nagoya Univ. 2@*Kino Tokushige 1, Kondo Shingo 1, Kondo Hiroki 1, Sekine Makoto 12, Hori Masaru 12 |
| 8 | TEM Observation of Carbon Thin Films Fabricated by Low-Energy Electron@Beam Induced Deposition Combined with Low-Temperature H tunneling Reactions | Univ. of Yamanashi, Clean Energy Res. Ctr.@1, Center for Creative Tech., Univ. of Yamanashi.@2, Crystal Science and Tech., Univ. of Yamanashi.@3
@*Morita Naoki 1,Ito Yusuke 1,Watanabe Ryo 1,Arai Tetuji 1,Sato Tetuya 1,Yamamoto Chiaya 2,Arimoto Keisuke 3,Yamanaka Jyunji 3,Nakagawa Kiyokazu3 |
| 9 | Hydrogen Desorption Process from Hydrogenated Diamond-Like Carbon film by Irradiation of Soft X-ray | LASTI Univ. Hyogo 1,JAEA 2,@*Kazuhiro Kanda 1,Mayumi Tode 2,Yuden Teraoka 2,Shinji Matsui 1 |
| 10 | Chemical bonding of diamond-like carbon films exposed to atomic hydrogen | Hirosaki Univ. 1, Tohoku Univ. 2
@*Osozawa Ryoichi 1,Nakazawa Hideki 1,Enta Yoshiharu 1,Suemitsu Maki 2
|
| | | Lunch 12:45`14:00 | |
| 19p-TV - 1`17 |
| 1 | Formation of Lubrication Film on DLC Film by the Tribochemical Reaction | AIST 1@*Ohana Tsuguyori 1, Wu Xingyang 1, Nakamura Takako 1, Tanaka Akihiro 1 |
| 2 | Effect of Substrates on Tribological Properties of Hydrogenated Amorphous Carbon Films | Nagaoka Univ. Tech. 1, Tokyo Inst. Tech. 2@*Ito Hiroki 1, Tsuchiya Takaaki 1, Ohshio Shigeo 1, Akasaka Hiroki 1, Ohtake Naoto 2, Saitoh Hidetoshi 1 |
| 3 | Formation of Ultrathin Carbon Films Using Carbonization of SOI Substrate | Kyushu Inst. of Technology 1@*Serikawa Taisuke 1, Nakao Motoi 1
|
| 4 | Characteristics of DLC-metal multiple layer | Kanazawa Institute of Technology@*Kohei Miyamoto,Mitsuji Higashimoto,Noriaki Ikenaga,Noriyuki Sakudo |
| 5 | Photochemical Modification of Carbon Films with Fluorine Functionalities using Dry Process | AIST 1@Nakamura Takako 1, Ohana Tsuguyori 1 |
| 6 | Formation of hard a-SiCx films by decomposition of tetramethylsilane in microwave discharge flow of Ar (1) Mechanical hardness and composition analysis | Nagaoka Univ. of Tech. 1@*Ogaki Takeshi 1, Toda Ikumi 1, Akasaka Hiroki 1, Saitoh Hidetoshi 1, Ito Haruhiko 1 |
| 7 | Formation of hard a-SiCx films by decomposition of tetramethylsilane in microwave discharge flow of Ar (2) Local structural analysis | Nagaoka Univ. of Tech. 1, Univ. of Hyogo LASTI 2, Kobe Univ. 3@*Wada Akira 1, Ogaki Takeshi 1,Niibe Masahito 2, Tagawa Masahito 3, Saitoh Hidetoshi 1, Kanda Kazuhiro 2, Ito Haruhiko 1 |
| 8 | Effect of O2 plasma etching on the DLC thin film | Nagaoka Univ. of Tech. 1, Univ. of Hyogo 2, Univ. of Hyogo LASTI 3, Nagaoka Univ. of Tech. Extreme Energy-Density Research Institute 4@*Wada Akira 1, Yasukawa Tomoyuki 2, Mizutani Fumio 2, Niibe Masahito 3, Suzuki Tsuneo 4, Saitoh Hidetoshi 1, Ito Haruhiko 1, Kanda Kazuhiro 3 |
| 9 | Influence of H2O on the a-C:H film formation in the ECR plasma CVD of Ar/C2H2. | Nagaoka Univ. of Tech. 1@*Koshimura Katsuaki 1, suzuki tsuneo 1, Saitoh Hidetoshi 1, Ito Haruhiko 1 |
| | | Break 16:15`16:30 | |
| 10 | Analysis of decomposition process of CH3CN with microwave discharge flow of Ar. | Nagaoka Univ. of Tech. 1@*Koshimura Katsuaki 1, Wada Akira 1, Araki Hitoshi 1, Ito Haruhiko 1 |
| 11 | Formation of a-CNx :H films by microwave discharge decomposition of CH3CN | Nagaoka Univ. of Tech. 1@*Fukuhara Sho 1, Ogaki Takeshi 1, Saitoh Hidetoshi 1, Ito Haruhiko 1 |
| 12 | Sticking Probability of CN radicals 1 | Nagaoka Univ. of Tech.@Hitoshi Araki 1, Tsuneo Suzuki 1, Hidetoshi Saitoh 1, *Haruhiko Ito 1 |
| 13 | Sticking probability of CN radicals 2 | Nagaoka Univ. of Tech.@Hitoshi Araki 1, *Haruhiko Ito 1 |
| 14 | Characterization of Tetrahedral Amorphous-carbon Film Prepared under High Vacuum | Toyohashi Univ. Technol.@1,Itoh Opt. Ind. Co., Ltd.@2,Onward Ceram. Coating Co., Ltd.@3,Hitachi Tool Eng. Ltd.@4,Ind. Res. Inst. Ishikawa@5
@*Tanoue Hideto 1,Okuda Hiroshi 1,Masao Kamiya1,2,Yanagita Taichiro 1,Naito Shota 1,Suda Yoshiyuki 1,Takikawa Hirofumi 1,Hasegawa Yushi 3,Taki Makoto 3,Tuji Nobuhiro 3,Ishikawa Takeshi 4,Yasui Haruyuki 5 |
| 15 | Coating of carbon film by atmospheric pressure plasma | Nagoya Inst. Tec. 1,CHubu Univ. 2@*Nakada Teppei 1,Kasuya Mikitoshi 1,Yasui shinji 1,Noda Mikio 2 |
| 16 | Characterization of boron, nitrogen-coincorporated diamond-like carbon films prepared by radio-frequency magnetron sputtering | Hirosaki Univ. 1@*Nakazawa Hideki 1, Sudoh Ayumu 1, Era Kosuke 1, Sato Yusuke 1, Mashita Masao 1 |
| 17 | a-CNx:H Film CVD using Pulsed Supermagnetron Plasma | Shizuoka Univ., Res. Inst. Elect. 1@*Kinoshita Haruhisa 1, Yamaguchi Atsushi 1 |
| 6.2 Carbon Films |
| March 20 9:00`12:00 |
| 20a-TV - 1`11 |
| ’ | 1 | Growth of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films by using a coaxial arc plasma gun | Dept. of Appl. Sci. for Electr. & Mater., Kyushu Univ. 1, Dept. of Aero. & Astro., Kyushu Univ. 2@*Hanada Kenji 1, Yoshida Tomohiro 1, Nakagawa You 1, Nishiyama Takashi 2, Yoshitake Tsuyoshi 1, Nagayama Kunihito 2 |
| ’ | 2 | Chemical bonding structures of boron-doped p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films | Kyushu Univ. 1, SAGA-LS 2@*Shinya Ohmagari 1, Tsuyoshi Yoshitake 1, Akira Nagano 1, Ryota Ohtani 2, Hiroyuki Setoyama 2, Eiichi Kobayashi 2, Kunihito Nagayama 1 |
| 3 | Electrical Properties of Carbon Nitride Films Deposited in Liquid Phase [I] | Tokai Univ.@*Higashi Mikiteru 1, Kiyota Hideo 1, Kurosu Tateki 2 |
| 4 | Development of stainless steel bipolar plate coated with Amorphous Carbon film | Tokai Univ.graduate school of Engineering reserch course@Murata Hiroki 1,Show Yoshiyuki 1 |
| £’ | 5 | Influence of oxygen plasma species on properties of Methyl-BCN film | Osaka Univ.@*Lu Zhiming 1, Hara Makoto 1, Masuzumi Takuro 1, Nishizaki Makoto 1, Kimura Chiharu 1, Aoki Hidemitsu 1, Sugino Takashi 1 |
| ’ | 6 | Influence of moisture on properties of Methyl-BCN film | Osaka Univ. 1@*Nishizaki Makoto 1,Hara Makoto 1,Masuzumi Takurou 1,Lu Zhiming 1,Aoki Hidemitsu 1,Kimura Chiharu 1,Sugino Takashi 1 |
| | | Break 11:30`11:45 | |
| ’ | 7 | Quantitative Analysis of C-H Bonds in DLC Films by FT-IR | Hiroshima Univ.@Motoyama Hiroaki 1, Takabayashi Susumu 1, Yamane Daisuke 1, Sakaue Hiroyuki 1,
Suzuki Hitoshi 1, Takahagi Takayuki 1 |
| 8 | Construction of DLC inquiry system using neural network | Tokyo Denki Univ. 1@*Taichi Kanai 1, Ayako Katoh 1, Yasuharu Ohgoe 1, Kenji Hirakuri 1, Yasuhiro Fukui 1 |
| ’ | 9 | Carbon thin film coating on inner-wall of the cylindrical objects | Tokyo Denki Univ. 1,2@*Takeda Naoyuki 1, Hoshino Yuta 2, Ohgoe Yasuharu 1, Hirakuri Kenji 2 |
| ’ | 10 | Biological properties for nitrogen-doped hydrogenated amorphous carbon film coated on artificial heart blood pump | Tokyo Denki Univ. 1, 2@*Sera Hotaka 1, Toriu Atsuko 2, Ohgoe Yasuharu 1, Hirakuri Kenji 2 |
| ’ | 11 | Carbon thin film coatimg for anti-infective property | Tokyo Denki Univ. 1, 2@*Iwatsuki Masato 1, Hoshino Yuta 2, Ohgoe Yasuharu 1, Hirakuri kenji 2 |
| 6.3 Oxide Electronics |
| March 17 10:00`18:15 |
| 17a-TQ - 1`11 |
| 1 | Preparation of CuAlO2 thin film by spin-coating method | Grad.School of Sci.andTech.,Niigata Univ. 1,Fac.of Eng.,Niigata Univ. 2,Cen.for Trns Research.,Niigata Univ. 3@*Hagiwara Atsushi 1,Tsuboi Nozomu 2,3,Futao Kaneko 1-3 |
| 2 | Fabrication by mist-CVD and characterization of p-type Cu2O thin films | Kyoto Univ. 1@*Fukui Yutaka 1, Fujita Sizuo 1 |
| 3 | Change in electrical and optical properties of H-doped In2O3 thin films caused by solid phase crystallization (II) | AIST 1, J.A.Woolam Japan 2, Gifu Univ.3@*Takashi Koida 1, Michio Kondo 1, Koichi Tsutsumi 2, Akio Sakaguchi 2, Michio Suzuki 2, Hiroyuki Fujiwara 3 |
| 4 | Examination of Low-temperature Crystallization of ITO Thin Films deposited by The Unbalanced Magnetron Sputtering and The Bias Sputtering Method
| Niigata Univ. 1, Tokyo Polytechnic Univ. 2@*Nakamura Yohei 1, Takahashi Saki 1, Ryu Cho 1, Shimizu Hidehiko 1, Iwano Haruo 1, Fukushima Yasuo 1, Nagata Kotaro 1, Hoshi Yoichi 2 |
| 5 | Fabrication of highly conductive amorphous NbOx | WPI-AIMR, Tohoku Univ.@*Ohsawa Takeo 1, Suzuki Toru 1, Okubo Junpei 1, Hashizume Tomihiro 1, Hitosugi Taro 1 |
| | | Break 11:15`11:30 | |
| 6 | Analysis of electron traps of MgO protective layer for PDP | Hiroshima Univ. 1@*Suesada Kazuma 1,Kitagaki Masaki 1,Kajiyama Hiroshi 1 |
| £ | 7 | Cu-doped ZnO Films Deposited by RF Magnetron Sputtering Method on ITO/Glass | Waseda Univ.Sci. & Eng 1, Waseda Univ. Kagami Lab 2, NCKU Taiwan 3@*Hsiao Chih-Hung 1,3, Takeuchi Toshio 2, Horikoshi Yoshiji 1,2, Yoshikawa Masaaki 1, Bunprasert Thanawat 1, Chang Shoou-Jinn 3 |
| 8 | Characterization of Device Performance and Resistance Change Mechanism of Flexible Transparent All-GZO-ReRAM | Tottori Univ. 1, Tottori Univ. Electronic Display Research Center 2, Oike & Co., Ltd. 3@*Hayato Tanaka 1, Kentaro Kinoshita 1,2, Takumi Okutani 1, Tatsuya Makino 1,
Toshio Hinoki 1,3, Koutoku Ohmi 1,2 and Satoru Kishida1,2 |
| 9 | Sputtering type oxygen radical source for the deposition of TiO2 films | Tokyo Polytechnic University@*D. Ishihara, N. Sato, S. Mochizuki, K.Kamikuri, M.Tobisaka, H. Hashimoto, Hao Lei@and Y. Hoshi |
| 10 | Promotion of the crystallization process of TiO2 films deposited by oxygen ion assisted reactive method | Tokyo Polytechnic Univ.@*Sato Noriyuki 1,Ishihara taiki 1,Mochizuki Shouhei 1,Tobiska Masayuki 1,Kamikuri kento 1,Hoshi Youichi 1 |
| 11 | Comparison between oxide film growth process using CVD and SCFD | Tokai Univ.1@Akiyama Yasunobu 1, Okumura Yu |
| | | Lunch 13:00`14:00 | |
| 17p-TQ - 1`16 |
| 1 | The electronic structures of anatase TiO2 | Sophia Univ. 1,Tokyo Inst. Tech. 2@Sugita Mari 1,Emori Masato 1,Sakama Hiroshi 1,Ozawa Kenichi 2 |
| 2 | The High Conductivity Titanium Oxide Films Prepared by RF Sputtering Method | Aichi Univ. Tec. 1,Gifu Univ. 2@*Sakaguchi Koichi 1,Fukazawa Masaki 1,Shimakawa Koichi 2,Hatanaka Yoshinori |
| 3 | Transport properties and electronic states of anatase LixTiO2 epitaxial thin films | Univ. of Tokyo 1, KAST 2@Utahito Takeuchi 1, *Akira Chikamatsu 1, Yasushi Hirose 1,2, Toshihiro Shimada 1,2,
Hiroshi Kumigashira 1, Masaharu Oshima 1, Tetsuya Hasegawa 1,2
|
| 4 | Characterization of Electronic Transport of TiO2 Nanotubes FET Fabricated by Dielectrophoresis Method | Osaka Prefecture Univ. 1,Nagaoka Univ. of Tech. 2@Ishii Masayuki 1,Terauchi Masahiro 2,Yoshimura Takeshi 1,Nakayama Tadachika 2, Fujimura Norifumi 1 |
| 5 | Photorechargeability of TiO2-polyaniline composite films with compositional gradients | Kagoshima Univ.@*Teruaki Nomiyama 1, Kenichi Sasabe 2, Katsuhiro Takaishi 2, Kazuki Ueno 2, Yuji Horie 1 |
| 6 | Photorechargeability of TiO2/WO3/GNF multilayer films | Kagoshima Univ.1@*Kubota Shingo 1,Fukuzaki Tatsuya 1,Hidaka Yoshiki 1,Nomiyama Teruaki 1,Horie Yuji 1 |
| 7 | Correlation of Adhesion Force between TiO2 Particles with Adsorbed H2O on the Surface | Toshiba Corp.@*Koizumi Masako 1, Tohno Ichiro 1, Makino Nobuaki 1 |
| 8 | Evaluation of Behavior of TiO2 Nanoparticles in Dispersion Medium Using Electrophoresis | Doshisha Univ. 1@Kazuatsu Ito 1, *Ryo Kawakami 1, Yuuki Sato 1, Motonari Adachi 1, Yasushige Mori 1, Shinzo Yoshikado 1 |
| | | Break 16:00`16:15 | |
| 9 | Orientation of polycrystalline TiO2:N films prepared by rf sputtering | Shizuoka Univ. 1@Takayama Akihiro 1, Takahashi Takahiro 1, *Ema Yoshinori 1 |
| 10 | Photocatalytic activities of TiO2 film, reactively RF sputtered using a
pressed TiC powder target
| Shibaura Inst. of Tech.@*Suzuki Kentaro 1,Saitoh Satoru 1,Ishii Tomoyuki 1,Saitoh Hiroki 1,Ishikawa Hiroyasu 1,Nagatomo Takao 1
|
| 11 | Hydrophilic TiOx Layer Deposition at Room-Temperature by Plasma-CVD | Ibaraki Univ.@*Yamauchi Satoshi 1, Suzuki Hiromi 1 |
| 12 | Photocatalitic activity of nanostructured TiO2 film combined with ultra small particles of vanadate glass | Dept.Appl.Phys.&Chem.,Univ.Electro-Commun 1,Tokai Industry Co.2@Miyazato Kiyohiro 1,Akira Morishige 2,*Shen Qing 1,Toyoda Taro 1 |
| 13 | Photocatalytic Properties of TiO2 Films by Atomic Layer Deposition(ALD) Process | Toshiba Corp 1,Shibaura Mechatronics Corp 2@*Matsuba Hiroshi 1,Okawara Satoshi 2,Ikegami Yukako 1,Onoue Seiji 1 |
| 14 | Photoacoustic Spectra of Inverse Opal TiO2 Electrode Adsorbed with CdS Quantum Dots
| Electro-common. Univ. 1@Onishi Yohei 1, Oshikane Keita 1, Ayuzawa Yasumasa 1,@Shen Qing 1, *Toyoda Taro 1 |
| 15 | Fabrication and photoacoustic characterization of porous zinc oxide thin films | Electro-commun. Univ. 1, AIST. 2@Yamada Shuzo 1, Hosono Eiji 2, Zhou Haoshen 2, Shen Qing 1, *Toyoda Taro 1 |
| 16 | Characterization of Electron and Thermal Diffusivity of Nanostructured Titanium Dioxide Film Using Improved Heterodyne Transient Grating Method | The Univ. of Electro-Commun. 1, Chuo Univ. 2@Hata Hiroaki 1,2, Katayama Kenji 2, *Shen Qing 1, and Toyoda Taro 1 |
| 6.3 Oxide Electronics |
| March 18 10:00`18:30 |
| 18a-TQ - 1`11 |
| ’ | 1 | Photo-conduction Characteristics of Titanium Oxide Films obtained by rf Sputtering Method | Aichi Univ. Tech.@*Fukazawa Masaki 1 |
| ’ | 2 | Interface control of Photo-deposited Materials on Ferroelectric PbTiO3 surface | University of Tokyo, Institute for Solid State Physics 1, Norwegian University of Science and Technology, Department of Electronics and Telecommunications 2, Tokyo Institute of Technology, Materials and Structures Laboratory 3@*Ryota Takahashi 1,2, Masao Katayama 3, Shintaro Takata 3, Mikk Lippmaa 1, Chang You 2, ?ystein Dahl 2, Jostein Grepstad 2, Yuji Matsumoto 3, Thomas Tybell 2 |
| ’ | 3 | The electronic characteristics of doped A-site channel SrTiO3 field effect transistors | Dept.Adv.Mater.Sci.Univ.Tokyo@1, ISSP 2@*Nishio Kazunori 1, Otsuka Reina 1, Matvejeff Mikko 2, Takahashi Ryota 1,2, Lippmaa Mikk 1,2 |
| ’ | 4 | Field-effect transistor on SrTiO3 single crystal with atomic-layer-deposited gate dielectric | IMR Tohoku Univ. 1, WPI-AIMR Tohoku Univ. 2, CREST-JST 3@*Suganuma Kensei 1, Ueno kazunori 2, Tsukazaki Atsushi 1, Kawasaki Masashi 1,2,3 |
| ’ | 5 | Cation Stoichiometry of LaAlO3 Thin Films Grown by Pulsed Laser Deposition | Univ. of Tokyo 1, JST 2@*Sato Hiroki 1, Higuchi Takuya 1, Bell Christopher 1,2, Hikita Yasuyuki 1, Hwang Harold 1,2 |
| | | Break 11:15`11:30 | |
| ’ | 6 | Helicon-Wave-Excited-Plasma Sputtering Epitaxy of TiO2:Nb thin films on GaN | IMRAM-Tohoku Univ. 1, Sumitomo Metal Mining Co., Ltd. 2@*Hazu Kouji 1, Fouda Aly 1, Nakayama Tokuyuki 2, Tanaka Akikazu 2, Chichibu Shigefusa 1 |
| 7 | Helicon-Wave-Excited-Plasma Sputtering of Nb-doped TiO2 thin films (2) | IMRAM-Tohoku Univ. 1, Sumitomo Metal Mining Co., Ltd. 2@*Fouda Aly 1, Hazu Kouji 1, Nakayama Tokuyuki 2, Tanaka Akikazu 2, Chichibu Shigefusa 1 |
| ’ | 8 | Electric field induced ferromagnetism in r.t. ferromagnetic semiconductor Ti1-xCoxO2-d | IMR Tohoku Univ. 1, WPI-AIMR Tohoku Univ. 2, JST-PRESTO 3, JST-CREST 4, Univ. Tokyo 5@Y. Yamada 1, K. Ueno 2, T. Fukumura 1,3, H. T. Yuan 1,4, H Shimotani 1,4, Y. Iwasa 5,4, K. Kawasaki 1,2,4 |
| ’ | 9 | Characterization of ZnO films prepared by chemical bath deposition | Toyohashi Univ. of Tech. 1,Osaka Municipal Technical Research Inst. 2,AIST 3@*Yuya Kusano 1, Tsutomu Shinagawa 2, Shougo Ishizuka 3, Shigeru Niki 3, Masanobu Izaki 1C |
| ’ | 10 | Magnetoresistance of SrTiO3/LaTiO3/SrTiO3 heterostructures | Dept.Adv.Mater.Sci.Univ.Tokyo 1, ISSP 2,@Ohtsuka Reina 1 2, Nishio Kazunori 1 2, Matvejeff Mikko 2, Lippmaa Mikk 1 2 |
| ’ | 11 | Orientation change of CaFeO2.5 thin films by reduced and re-oxidized reactions | ICR, Kyoto Univ.1@*Sakaiguchi Aya 1 , Matsumoto Kazuya 1 , Kawai Masanori 1 , Ichikawa Noriya 1 , Shimakawa Yuichi 1 |
| | | Lunch 13:00`14:00 | |
| 18p-TQ - 1`17 |
| |
1 |
SrTiO3 Β-Doped Field-Effect Transistor |
Univ. Tokyo 1,2, JST 3@*Yusuke Kozuka 1, Moyuru Kurita 2, Minu Kim 1, Christopher Bell 1,3, Yasuyuki Hikita 1, Harold Y. Hwang 1,3 |
| 2 | Characterization of the dielectric permittivity of SrTiO3 under strong internal electric
field using internal photoemission | Univ. Tokyo 1, JST 2@*Motohide Kawamura 1, Yasuyuki Hikita 1, Harold Y. Hwang 1,2 |
| 3 | Temperature dependence of the dielectric permittivity at the Au/Nb:SrTiO3 interface | Univ. Tokyo 1, JST 2@*Yasuyuki Hikita 1, Motohide Kawamura 1, Harold Y. Hwang 1,2 |
| ’ | 4 | Manganite-Base Magnetic Transistor | Univ. of Tokyo 1,JST 2@*Yajima Takeaki 1,Hikita Yasuyuki 1,Hwang Harold 1,2 |
| ’ | 5 | The determination of potential profiles in depth for termination controlled La0.6Sr0.4MnO3/Nb:SrTiO3 heterojunctions | The University of Tokyo 1, JST-CREST 2, UT-SRRO 3, JST-PRESTO 4, and JASRI/SPring-8 5@*M. Minohara 1, K. Horiba 1,2,3, H. Kumigashira 1,2,4, E. Ikenaga 5, and M. Oshima 1,2,3 |
| ’ | 6 | Atomic structure of off-stoichiometric SrMnO3 thin films grown by PLD | Univ. Tokyo 1, NIMS@2, Univ. Tokyo 3, JFCC 4, Tohoku Univ. WPI 5@*Shunsuke Kobayashi 1, Yoshinori Tokuda 1, Tsuyoshi Ohnishi 2, Teruyasu Mizoguchi 3, Naoya Shibata 3 , Yuichi Ikuhara 3 4 5, Takahisa Yamamoto 1 4 |
| ’ | 7 | Magnetodielectric effect in EuTiO3 epitaxial thin films (2) | Univ. of Tokyo 1, KAST 2, Tohoku Univ. 3@*Kunitada Hatabayashi 1, Yasushi Hirose 1,2, Akira Chikamatsu 1, Shoichiro Nakao 1,2, Taro Hitosugi 2,3, Toshihiro Shimada 1,2, Tetsuya Hasegawa 1,2 |
| ’ | 8 | Magnetic-field sensor based on a VO2 film deposited on a magnetostrictive substrate | Dept. Adv. Mater. Sci. Univ. Tokyo 1, ISSP 2@*Kikuzuki Tatsuya 1, Lippmaa Mikk |
| | | Break 16:00`16:15 | |
| ’ | 9 | Metal-insulator transition in epitaxial V1-xWxO2 (0 ? x ? 0.33) thin films | RIKEN CMRG 1, Tohoku Univ. 2, Tokyo Univ. 3, ERATO-MF 4@*Keisuke Shibuya 1, Masashi Kawasaki 1,2, Yoshinori Tokura 1,3,4 |
| ’ | 10 | Synthesis of Nd1-xSmxNiO3 thin film by PLD method and their properties | AIST 1, CREST 2@*Shutaro Asanuma 1,2, Ping-Hua Xiang 1,2, Hiroyuki Yamada 1, Isao Inoue 1,2, Hiroshi Sato 1, Akihito Sawa 1,2, Hiroshi Akoh 1,2
|
| ’ | 11 | Thermal forming in an ReRAM with a single-crystalline NiO thin film | ICR, Kyoto Univ. 1, Device Platforms Research Lab., NEC 2@*Masanori Kawai 1, Kimihiko Ito 2, Noriya Ichikawa 1, Yuichi Shimakawa 1 |
| ’ | 12 | Research on Relation between Crystallinity and Memory Property of Poly-NiO-ReRAM | Tottori Univ. 1, Tottori Univ. Electronic Display Research Center (TEDREC)2@*Kazufumi DOBASHI 1, Kentaro KINOSHITA 1,2, Tatsuya MAKINO 1
Takatoshi YODA 1, and Satoru KISHIDAb 1,2
|
| ’ | 13 | Direct Imaging of Spatial Oxygen Transport upon Forming Process in a Resistance Switching Device based on Transition metal oxide | Univ. of Tokyo 1, RIKEN 2, MST 3@*Takeshi Yajima 1, Kohei Fujiwara 2, Aiko Nakao 2, Tomohiro Kobayashi 2, Toshiyuki Tanaka 2, Kei Sunouchi 2, Yoshiaki Suzuki 2, Kentaro Kojima 3, Mai Takeda 3, Yoshinobu Nakamura 1, Kouji Taniguchi 1, and Hidenori Takagi 1, 2 |
| ’ | 14 | Direct Observation of the Initial Stage of Forming Process in Planar ReRAM | Shibaura Inst. of Tech.@*Kazunori Suzuki 1, Shinya Kosake 1, Kentaro Kyuno 1 |
| 15 | Electrode dependence of electronic structures at metal/Pr0.7Ca0.3MnO3 interfaces | The Univ. of Tokyo 1, JST-CREST 2, JST-PRESTO 3, UT-SRRO 4@yasuhara Ryutaro 1, Yamamoto Taiki 1, Ohkubo Isao 1,2, Kumigashira Hiroshi 1,3,4, Oshima Masaharu 1,2,4 |
| ’ | 16 | The electronic structure at the Al/La0.33Sr0.67FeO3 interfaces with Resistance Switching | The Univ. of Tokyo 1, JST-PRESTO 2, UT-SRRO 3, JST-CREST 4@*Yamamoto Taiki 1, Yasuhara Ryutaro 1, Ohkubo Isao 1,2, Kumigashira Hiroshi 1,2,3, Oshima Masaharu 1,3,4 |
| ’ | 17 | Electrical characteristics of AlSiON/AlN/SiC at high temperature | Osaka Univ. 1@*Komatsu Naoyoshi 1, Honjo Masatomo 1, Kimura Chiharu 1, Aoki Hidemitsu 1, Sugino Takashi 1 |
| 6.3 Oxide Electronics |
| March 19 10:00`18:30 |
| 19a-TQ - 1`11 |
| 1 | Fabrication of multiscale porous structured Na2W4O13 crystal layers by spray pyrolysis using binary microsphere templates | Shinshu Univ. 1, Osaka Inst. Tech. 2@Maki Fujisawa 1, Katsuya Teshima 1, SunHyung Lee 1, Syuji Fujii 2, Shuji Oishi 1 |
| £ | 2 | Synthesis of Cupric Oxide Nanowires by Thermal Oxidation Method | Nagoya Institute of Technology@JianBo Liang 1, Naoki Kishi 1, Tetsuo Soga 1, and Takashi Jimbo 1 |
| 3 | The energy band structure of anodic porous alumina | NIMS 1@*Y. Harada 1, S. Nigo 1, J. W. Lee 1, S. Kato 1, K. Oyoshi 1, Y. Nakano 1, H. Kitazawa 1, G. Kido 1 |
| 4 | Switching properties of Al2O3 thin films fabricated by co-sputtering method | National Institute for Materials Science 1, GIT Japan Inc. 2@*Lee Jeungwoo1,Nakano Yoshihiro2,Harada Yoshitomo1, Nigo Seisuke1, Kato Seiichi1, Kitazawa Hideaki1, Kido Giyuu1 |
| 5 | Contraction of Lattice Constant in MgO film grown on Si(001) Substrate | Kanagawa Ind. Tech. Center 1, Ibaraki Univ. 2, Tokyo Inst. of Tech. 3@Satoru Kaneko 1, Takatoshi Nagano 2, Kensuke Akiyama 1, Takeshi Ito 1, Manabu Yasui 1,
Masayasu Soga 1, Yasuo Hirabayashi 1, Hiroshi Funakubo 3, Mamoru Yoshimoto 3 |
| | | Break 11:15`11:30 | |
| 6 | Gas barrier performances of SiO2 coatings from perhydropolysilazane | Kyodo Printing Co.,LTD.1@*Fuchita Yasushi 1,Takahashi Atsushi 1 |
| 7 | Magneto-conductive properties in magnetite (Fe3O4) thin films produced by rapid thermal processing deoxidation method | Konan Univ 1,Quantum Nanotechnology Laboratory 2,Osaka Univ 3,NRI-AIST 4@*Tomohiko Murakami 1,Hiromi Kobori 1 2,Atsushi Yamasaki 1 2,Akira Sugimura 1 2,
Toshifumi Taniguchi 3,Miyuki Tanaka 4,Yasuhisa Naitoh 4,Tetsuo Shimizu 4 |
| £ | 8 | Fabrication of epitaxial oxide nano-structures with controllability using a high aspect-ratio Mo hollow nanopillar mask | ISIR@*Nam-Goo Cha 1, Teruo Kanki 1, Hidekazu Tanaka 1 |
| 9 | Development of Ultraviolet Sensor using Oxide Nano-Islands | Kagawa-NCT@Sajiki1 Go 1,Kuroda Mami 2,Tanaka Tomohiko 3,Okano Hiroshi 4 |
| 10 | Adsorption characteristics in Dye-Sensitized ZnO Solar Cells | Univ. Electro-Comm. 1@*Yamanashi Yusuke 1, Gonda Tomohiro 1, Naoki kobayashi 1 |
| 11 | Evaluation of Photovoltaic Cells Consisting of Heterojuntion Oxide Diodes | AIST NIRC@*Noda Shuichi, Shima Hisashi, Akinaga Hiroyuki |
| | | Lunch 13:00`14:00 | |
| 19p-TQ - 1`17 |
| £ | 1 | Gas phase photocatalytic decomposition of methanol using nanocrystalline WO3 films | Dept. Electronic Sci. & Eng., Kyoto Univ. 1, ICC, Kyoto Univ. 2@*Sadale Shivaji 1, Noda Kei 1, Kobayashi Kei 2, Matsushige Kazumi 1 |
| 2 | Electronic structure of W-doped VO2 Thin Films with Giant Metal-Insulator Transition investigated by Hard X-ray photo emission spectroscopy | ISIR, Osaka Univ. 1, NIMS/SPring-8 2@*Takami Hidefumi 1, Kanki Teruo 1, Ueda Shigenori 2, Kobayashi Keisuke 2, Nam-Goo Cha 1, Tanaka Hidekazu 1 |
| 3 | Evaluation of stochastic resonance properties with multi-channels in VO2 thin films | Osaka Univ. 1, Gunma Univ. 2@*Teruo Kanki 1, Yasushi Hotta 1, Naoki Asakawa 2, Tomoji Kawai 1, Hidekazu Tanaka 1
|
| 4 | Synthesis and analysis of half-metallic oxide, Sr2FeMoO6, films by combinatorial methods | MSL, Tokyo Tech. 1@*Kadota Shogo 1, Matsumoto Yuji 1, Sasagawa Takao 1 |
| 5 | Change in Crystallographic Structure by Low Temperature Reduction in LaSrNiO4 | Inst. for Chem. Res., Kyoto Univ.@*Noriya Ichikawa, Aya Sakaiguchi, Kazuya Matsumoto, Masanori Kawai, and Yuichi Shimakawa |
| 6 | Verification of the surfactant effects of SrO in La1-xSrxMnO3 film growth | The Univ. of Tokyo 1, JST-PRESTO 2, JST-CREST 3, UTSRRO 4@*Furukawa Yoko 1, Minohara Makoto 1, Kumigashira Hiroshi 1,2,4, Oshima Masaharu 1,3,4 |
| 7 | Epitaxial thin film growth of A-site ordered perovskite ferromagnetic semiconductor CaCu3Mn4O12 (2) | Dept. of Appl. Chem., The Univ. of Tokyo 1,Materials and Structures Laboratory, Tokyo Inst. of Technology 2,Graduate School of Frontier Sciences, the Univ. of Tokyo 3,CREST-JST 4,SRRO, The Univ. of Tokyo 5@*Mari Isobe 1,Isao Ohkubo 1,Junichi Shimoyama 1,Yuji Matsumoto 2, Hideomi Koinuma 3, Masaharu Oshima 4,5 |
| 8 | Effect of post-annealing on phase transition of vanadium oxide films grown on c- Al2O3 substrate | Tokai University@*Okimura Kunio 1 |
| | | Break 16:00`16:15 | |
| 9 | Career doping effects in antiferromagnet Sr2-xLaxVMoO6 | Nagoya Univ.@*Matsushima Hiroyuki 1, Gotoh Hidetaka 1, Youichi Takeda 1, Kenji Ueda 1, Hidehumi Asano 1 |
| 10 | Channel transport property of RMnO3/ZnO heterostructure device | OsakaPref.Univ. 1@*Yamada Hiroaki 1,Fukushima Tadahiro 1,Yoshimura Takeshi 1,Fujimura Norifumi 1 |
| 11 | Fabrication and Characterization of a Solid Electrolyte Memory Consisting of HfO2 | Tottori Univ. 1,Tottori Univ. Electronic Display Research Center (TEDREC)2@*Tatsuya Nakabayashi 1,Kentaro Kinoshita 1,2,Satoru Kishida1,2 |
| 12 | Temperature Dependence of Switching Bahavior for Cu/Ta2O5/Pt Structures | NIMS 1, JST-CREST 2@Tohru Tsuruoka 1,2, Kazuya Terabe 1, Tsuyosi Hasegawa 1,2, Masakazu Aono 1 |
| 13 | Estimation of migration of Oxygen vacancy due to non-equilibrium current | Tohoku Univ. 1,@*Motohito Miura 1, Yukihiro Shimizu 1 |
| 14 | Surface observation of SrTiO3(100) treated by HCl-HNO3 acidic solution | Tohoku Univ. 1, Univ. of Tokyo 2@*Ryota Shimizu 1,2, Takeo Ohsawa 1, Katsuya Iwaya 1, Tetsuya Hasegawa 2, Tomihiro Hashizume 1, Taro Hitosugi 1 |
| 15 | Local electronic states in homoepitaxial SrTiO3 probed by PLD-STM/STS | WPI-AIMR, Tohoku Univ.@*Ohsawa Takeo 1, Iwaya Katsuya 1, Shimizu Ryota 1, Hashizume Tomihiro 1, Hitosugi Taro 1 |
| 16 | Barrier Height Control via Interface Dipoles in SrRuO3/Nb:SrTiO3 Schottky Junctions | Univ. of Tokyo 1,JST 2@Yajima Takeaki 1, Hikita Yasuyuki 1, Hwang Harold 1,2 |
| 17 | Water Electrolysis Induced Reversible Metal-Insulator Transition of SrTiO3 | Nagoya Univ.& PRESTO-JST 1,JFCC 2,Tokyo Tech. 3,ERATO-SORST-JST 4,Univ. Tokyo 5@*Ohta Hiromichi 1,Sato Yukio 2,Kato Takeharu 2,Kim SungWng 3,Nomura Kenji 4,Ikuhara Yuichi 5,Hosono Hideo 3,4 |
| 6.3 Oxide Electronics |
| March 20 9:00`12:00 |
| 20a-TQ - 1`11 |
| 1 | A density functional theory-based investigation for the mechanism of resistive RAM | Osaka Univ. 1@*Kishi Hirofumi 1, Nakanishi Hiroshi 1, Kasai Hideaki 1 |
| 2 | Control of Current Path in Resistance Random Access Memory Using Au Nanodot | NAIST 1, CREST 2@*Kentaro Kawano 1,2, Mutsunori Uenuma 1,2, Bin Zheng 1,2, Ichiro Yamashita 1,2, Yukiharu Uraoka 1,2 |
| 3 | Application of CoO Nano-Dot to Resistive Switching Memory | NAIST 1, CREST 2@*Mutsunori Uenuma 1,2, Kentaro Kawano 1,2 , Shigeo Yoshii 1,
Ichiro Yamashita 1,2 and Yukiharu Uraoka 1,2
|
| 4 | Evaluation of Chemical Bonding Features and Resistive Switching of TiYxOy | Hiroshima Univ. 1@Ohta Akio 1, Mohd Fairuz Kamarulzaman 1, Goto Yuta 1, Murakami Hideki 1, Higashi Seiichiro 1, Miyazaki Seiichi 1 |
| 5 | Elucidation of Physical Property of Filaments in NiO-ReRAM | Tottori Univ. 1, Tottori Univ. Electronic Display Research Center (TEDREC)2@*Kinoshita Kentaro 1,2, Makino Tatsuya 1, Dobashi Kazufumi 1, Yoda Takatoshi 1, Kishida Satoru 1,2 |
| | | Break 11:15`11:30 | |
| 6 | Study on Fabrication Method of Forming-Free Resistance Random Access Memory (ReRAM) | Tottori University 1, Tottori University Electronic Display Research Center 2@*Takatoshi Yoda 1, Kentaro Kinoshita 1,2, Tatsuya Makino 1, Kazufumi Dobashi 1, and Satoru Kishida 1,2 |
| 7 | Electrical characterization of ReRAM with Mo oxide thin film | Hokkaido Univ.@*Hiromichi Kaji, Kawanishi Takahito, Hirofumi Kondo, Takashi Fujii, Masashi Arita, Yasuo Takahashi
|
| 8 | Observation of Current Paths of Anodic Alumina for ReRAM by Conducting AFM | NIMS@*Keiji Oyoshi, Seisuke Nigo, Junichi Inoue, Osamu Sakai, Hideaki Kitazawa, Giyuu Kido |
| 9 | Reliability Evaluation of TaOx-ReRAM Prepared by RF Sputtering Method | Institute of Semiconductor and Electronics Technologies, ULVAC, Inc.@*Natsuki Fukuda, Hidenao Kurihara, Kazumasa Horita, Yoshiaki Yoshida, Yutaka Kokaze, Yutaka Nishioka, Koukou Suu |
| 10 | Influence of electrode material and thermal annealing for forming operation in HfO2-RRAM | SHARP Corp. 1, NIRC-AIST 2@*Nakano Takashi 1, Shima Hisashi 2, Tamai Yukio 1, Ohnishi Shigeo 1, Awaya Nobuyoshi 1, Akinaga Hiroyuki 2 |
| 11 | Nanoscale analysis of chemical stats in resistance switching layer reacting with Ti | NIRC-AIST 1,SHARP Corp. 2@*SHIMA Hisashi 1, NAKANO Takashi 2, AKINAGA Hiroyuki 1 |
| 6.4 Novel Materials for Thin Films |
| March 18 14:00`18:00 |
| 18p-TJ - 1`15 |
| 1 | Preparation of oxide films and their direct patterning by surface discharge technique | Shizuoka Univ.@Shikatani Masahiro, Nabeta Keigo, Shibayama Yoshihiro, *Okuya Masayuki |
| 2 | Preparation to zinc oxide film by coplanar surface discharge | Shizuoka Univ.@Nabeta Keigo, Shikatani Masahiro, Shibayama Yoshihiro, *Okuya Masayuki |
| 3 | Metal oxide films synthesized by thermal spray from metal-EDTA complexes | Nagaoka Univ. Tech. 1, Chubu Chelest. Co. Ltd. 2@*Ohoto Masahiro 1, Hasebe Yasuhiro 1, Nakamura Atsushi 1,2, Ohshio Shigeo 1, Akasaka Hiroki 1, Saitoh Hidetoshi 1
|
| 4 | Synthesizes of various metal oxide films by thermal spray method with metal-EDTA complexes | Nagaoka Univ. Tech. 1, Chubu Chelest 2@*Hasebe Yasuhiro 1, Ohoto Masahiro 1, Nakamura Atsushi 1,2, Ohshio Shigeo 1, Akasaka Hiroki 1, Saitoh Hidetoshi 1 |
| 5 | Sol-gel synthesis and characterization of ZrO2 thin films dispersed with silver nanoparticles | Tokai Univ.@*Yokoyama Eisuke 1, Wakaki Moriaki 1 |
| 6 | Dielectric analysis on optical properties of ZrO2 thin films dispersed with silver nanoparticles | Tokai Univ. 1@*Yokoyama Eisuke 1, Wakaki Moriaki 1 |
| 7 | Resistive Switching Characteristics of Sol-Gel Processed NiO Films | Wakayama NCT@*Sakuma Toshiyuki 1, Hada Masao 1, Okamoto Takuya 1, Tujimoto Kohei 1 |
| 8 | Ignition voltage for discharge between ceramic coated electrodes by spin coating | Nagaoka Univ. Tech. 1, Air Water Inc. 2@*Matsuda Kuniyuki 1, Kiyokawa Toshio 2, Ohshio Shigeo 1, Akasaka Hiroki 1, Saitoh Hidetoshi 1 |
| | | Break 16:00`16:15 | |
| ’ | 9 | Influences of humidity on film forming process in properties of P(VDF-TeFE) piezoelectric polymer | Osaka Univ.Sugino Lab.1@*Terashima Daiki 1,Jeong Jong-Hyeon 1,Kimura Chiharu 1,Aoki Hidemitsu 1,Sugino Takashi 1 |
| 10 | Characterization of Cr-N films deposited on silica substrates by sputtering | TRI-Osaka 1, Res. Inst. for 21st Century Osaka Pref. Univ. 2, Osaka Pref. Univ. 3@*Satoh Kazuo 1, Kakehi Yoshiharu 1, Uno Mayumi 1, Sakurai Yoshiaki 1, Tsutom Yotsuya 2, Ishida Takekazu 3
|
| 11 | Sputter-Gas Dependence of Ta2O5 Thin Film | Ehime Univ. 1@*Nagai Chihiro 1, Uemura Akira 1, Ohnishi Hideomi 1 |
| 12 | Fabrication of conductive nanowires using dislocation templates of GaN thin films | Univ. Tokyo 1, 3, 4, Tohoku Univ. IMR 2, JFCC 5, Tohoku Univ. WPI 6@*Amma Shin-ichi 1, Tokumoto Yuki 2, Edagawa Keiichi 3, Shibata Naoya 1, Mizoguchi Teruyasu 1, 3, Yamamoto Takahisa 4, 5, Ikuhara Yuichi 1, 5, 6 |
| 13 | Reaction mechanism of CeO2 thin films in MOCVD with H2O introduction | Hosei Univ. 1, Comet, Inc. 2@*Takanori Izu 1, Kentarou Otsuka 1, Tomoya Kitaru 1, Hiroki Shimada 1, Takehiro Uchida 1, Setsu Suzuki 2, Yasuhiro Yamamoto 1 |
| 14 | Evaluation of the Hardness of Electroplated Films Deposited in Foamed Electrolyte | Tokyo Univ.Agricul.& Technol. , Yamada Co.,Ltd.@Sugawara Tomohiro 1,Yamada Yoshiyasu 2,Furuhashi Takahiro 2,Ichihara Shoji 1,Usui Hiroaki 1 |
| 15 | Degradation of Electrochromic Switchable Mirror Maintained in Thermostat/Humidistat Bath
| AIST@*Kazuki Tajima 1, Yasusei Yamada 1, Masahisa Okada 1, Kazuki Yoshimura 1 |
| 6.4 Novel Materials for Thin Films |
| March 19 10:00`12:00 |
| 19a-TJ - 1`7 |
| 1 | Epitaxial growth of (0001)InN thin films on (111)HfN/(0001)sapphire | Kitami Inst. Tech.@*Asano Yuich 1, Yanagisawa Hideto 1, Sasaki Katsutaka 1, Abe Yoshio 1 |
| 2 | Growth of Hybrid Orientation CeO2 Layers on Si(100) Substrates by EB-Induced Orientation Selective Epitaxy | Iwaki Meisei Univ. 1@*Tomoyasu Inoue 1, Nobuyuki Igarashi 1, Yuki Kanno 1, Shigenari SHida 1 |
| 3 | Preparation of Rare Gas /Si Mixed Films and the Crystallization of Clathrate with Annealing | Gifu Natl Coll. Technol. 1,Gifu Univ. 2@*Ban Takahiko 1,Habuchi Hitoe 1,Iida Tamio 1,Ueno Hiroyuki 2,Kume Tetsuji 2,Ban Takayuki 2,Nonomura Syuiti 2,Ohasi Fumitaka 2 |
| 4 | Immobilization of metal nanoparticles onto metal oxide substrates following the preparation by sputter deposition technique in ionic liquid | Nagoya Univ. 1@Yasuhiro Ohta 1, *Shushi Suzuki 1, Ken-ichi Okazaki 1, Tsukasa Torimoto 1 |
| | | Break 11:00`11:15 | |
| 5 | Optical and Electro Chromism Properties of Palladium Doped Tungsten Oxide Thin Films | Meiji Univ. 1,@Taihei Yabumoto 1,Yuki Iwai 1,Noboru Miura 1,Setsuko Matsumoto 1,Ryotaro Nakano 1,Hironaga Matsumoto 1 |
| 6 | Low-temperature Heat Sealing Function Induced by Plasma Exposure on Biaxially Oriented PET Films | Mie Univ. 1,Kawamura Sangyo CO.,LTD@Yokura Miyoshi 1,2,Hayashi Takuro 2,Yoshii Tatsuya 1,Maeda Yoshihiko 1,Matsui Masahito 1,Nakamura Yuichi 1,Endo Tamio 1 |
| 7 | Control of albumin adsorption on titania surface by pH | Nagaoka Univ. Tech. 1@*Ii Kiyoto 1, Ohshio Shigeo 1, Akasaka Hiroki 1, Saitoh Hidetoshi 1 |
| 6.4 Novel Materials for Thin Films |
| March 20 9:00`15:00 |
| 20a-TJ - 1`11 |
| ’ | 1 | Electrochemical Synthesis of Dielectric Thin Layer with Cerium Oxide | SANYO Electric Co., Ltd.@Mitsuyama Tomohiro, Nishimura Koichi, Nonoue Hiroshi |
| ’ | 2 | Synthesis and Properties of a New CVD Precursor Ti-DOT | SagamiChemicalResearchCenter 1,Tosoh Corporation 2@*Yamamoto Toshiki 12,Tada Kenichi 1,Iwanaga Kohei 12,Maniwa Atsushi 2,
Chiba Hirokazu 2,Yotsuya Tadahiro 12,Oshima Noriaki 12 |
| ’ | 3 | Laser MBE Fabrication of Functional Boride Epitaxial Thin Films with Compositional Modulation or Buffer Layered | Dept. of Innov. Eng. Mater., Tokyo Inst. of Tech. 1, TOSHIMA Manufacturing Co., Ltd 2, Kanagawa Ind. Tech. Center 3, Patent Attorney 4@*Kato Yushi 1, Shiraishi Naoki 1, Arai Hideki 1, Tsuchimine Nobuo 2, Kobayashi Susumu 2, Kaneko Satoru 3, Yoshimoto Mamoru 1,4 |
| ’ | 4 | Fabrication of FeTiO3-Fe2O3 solid solution epitaxial thin films on A-plane sapphire substrates | Kyoto Univ. 1@*Tomohiko Matoba 1, Koji Fujita 1, Shunsuke Murai 1, Katsuhisa Tanaka 1 |
| ’ | 5 | Material Exploration of Zr-Ta-Y-O Dielectric Thin Films for DRAM Capacitors by Composition-Spread Film Method | Meiji Univ. 1, NIMS 2
@*Yuji Kiyota 1,2, Kenji Itaka 2, Yuta Iwashita 1,2, Tetsuya Adachi 2,
Toyohiro Chikyow 2, Atsushi Ogura 1
|
| ’ | 6 | Influence of nitrogen addition on the optical property of LaAlO thin film | Osaka Univ. 1@*Masatomo Honjo 1, Naoyoshi Komatsu 1, Chiharu Kimura 1, Hidemitsu Aoki 1, Takashi Sugino 1 |
| | | Break 11:30`11:45 | |
| 7 | Synthesis of layered-perovskite Sm2Ti2O7 ferroelectric films | The Univ. of Tokyo 1, KAST 2@Ohno Sawako 1, Hatabayashi Kunitada 1, Hirose Yasushi 1,2, Chikamatsu Akira 1,2, Shimada Toshihiro 1,2, Hasegawa Tetsuya 1,2 |
| 8 | Relationship between Thermal / Mechanical Properties and Internal Structures in Transparent Conductive Indium Zinc Oxide Thin-films | Toray Research Center 1,Aoyama Gakuin Univ. 2@*Masaaki Takeda 1,Nobuhiro Matoba 1, Ryo Endo 1,Yoshihiro Takai 1,Nobuto Oka 2,Yuzo Shigesato 2 |
| 9 | Preparation and characterization of amorphous Fe2O3-TeO2 films | Tokai Univ.@*Arima Tomoki 3,Wakaki Moriaki 1,Sakata hironobu |
| 10 | Characteristics of HfO2 films deposited on polymer substrate | AIST 1@*Suzuki Kazuyuki 1, Kato Kazumi |
| 11 | Investigation of Thin Film Library for Combinatorial Evaluation of Crystallization Temperature Using Thermography
| Tokyo Tech. Graduate School 1, Tokyo Tech. P&I Lab. 2@*Yuko Aono 1, Junpei Sakurai 2, Akira Shimokohbe 2, Seiichi Hata 2 |
| | | Lunch 12:00`13:00 | |
| 20p-TJ - 1`8 |
| ’ | 1 | Room-temperature PLD fabrication and characterization of magnesium and nickel oxide solid solution epitaxial thin films | Tokyo Inst. of Tech. 1,TOSHIMA Manufacturing Co., Ltd 2,NAMIKI Precision Jewel Co., Ltd 3,Patent Attorney 4@*Arai Hideki 1,Kato Yushi 1,Shiraishi Naoki 1,Tsuchimine Nobuo 2,Kobayashi Susumu 2,Koyama Koji 3,Yoshimoto Mamoru 1,4 |
| 2 | Deposition of BiFeO3 and SrFeO3 Thin Films by Pulsed Laser Deposition | Nihon Univ.@* Nemoto Takuya 1, Otsuki Syunpei 1, Iwata Nobuyuki 1, Yamamoto Hiroshi 1 |
| ’ | 3 | Epitaxial growth of KBr thin films via Ionic liquid and their orientation control | MSL Tokyo Tech.@*Shun Katoh 1, Yuji Matsumoto 1 |
| ’ | 4 | Pulsed Laser Ablation of Mica Target for Thin Film Synthesis | Dept. of Innov. Eng. Mater Tokyo Inst. of Tech. 1, YAMAGUTI MICA Co. Ltd. 2, TOSHIMA Manufacturing Co. Ltd. 3, Patent Attorney 4@*Nakasone Yuta 1, Akita Yasuyuki 1, Sugimoto Yuki 1, Sano Yoshifumi 2, Tuchimine Nobuo 3, Kobayashi Susumu 3, Yoshimoto mamoru 1.4 |
| 5 | Tailoring nanomorphology of thin films by oblique-angle deposition and ion beam etching | Kyoto Univ. 1@H. Moriwaka 1, M. Suzuki 1, Y. Shirai 1, K. Nakajima 1, K. Kimura 1 |
| 6 | Relation of a sticking probability and a growth of
metal whiskers during HT-GLAD | Kyoto Univ. 1@*Kita Ryo 1, Suzuki Motofumi 1, Kinoshita Sadamu 1, Nakajima Kaoru 1, Kimura Kenji 1 |
| 7 | Influence of environmental test of the TiO2 optical thin films | Tokai Univ. 1@*Hiroki Sugimoto 1,Hikaru Sugiyama 1,Hiroshi Murotani 1 |
| 8 | Influence of light scattering on structures of SiO2 optical thin films(2) | Tokai univ. 1,SHINCRON co.,LTD. 2@*Toshiyuki Nishikawa 1,Hiroshi Murotani 1,Yoshitaka Iida 2,Katsuhisa Okada 2
|
| 6.5 Surface Physics and Vacuum |
| March 17 |
| 17a-P2 - 1`25 |
| |
17a-P2 - 1`25@Poster Session 9:30`11:30 |
| 1 | Development of low-energy electron diffraction apparatus using field-emission II | Kyushu Univ. 1@Anegawa Kenta 1, *Mizuno Seigi 1 |
| 2 | Electrical and Surface properties of Sc-doped TiO2 Ceramic and Thin film | Tokyo Univ. Sci. 1@Kobayashi Yuji 1, Tomiyama Kazuya 1, Matsumoto Masashi 1, Higuchi Tohru 1 |
| 3 | STM Observation After Exposing Si(111)-7~7 to Supersonic O2 Beam at 300 K | Japan Atomic Energy Agency@Akitaka Yoshigoe, Yuden Teraoka |
| 4 | STM Observation of Surface Morphology of Oxidized Si(111) Depending on O2 Dose for Translational Kinetic Energy of 2.2 eV
| Japan Atomic Energy Agency@Yoshigoe Akitaka, Teraoka Yuden |
| ’ | 5 | Role of strain in SiO2/Si interfacial oxidation (3) : 3C-SiC growth caused by oxidation-induced carbon condensation
| Tohoku Univ. 1, JAEA 2, Akita Nat. Col. Tech. 3@*Hozumi Hideaki 1, Ogawa Shuichi 1, Yoshigoe Akitaka 2, Ishidzuka Shinji 3, Harries James 2, Teraoka Yuden 2, Takakuwa Yuji 1 |
| 6 | Study of desorption sites for thermal desorption of hydrogen from Si(100) surface based on diffusion-promoted-desorption mechanism
| Yamagata Univ. 1, Kyushu Inst. Tech. 2@*Narita Yuzuru 1, Uesugi Isao 1, Inanaga Shoji 2, Namiki Akira 2 |
| 7 | Analysis of Protective Layers for Plasma Display Panel by Metastable De-excitation Spectroscopy (I)
- Effects of Heating in Air on MDS Spectra of MgO and CaO Films - | Osaka Univ. 1,Panasonic 2,National Inst. of Material Science 3@*Yoshino Kyohei 1,2,Morita Yukihiro 1,2,Nishitani Mikihiko 1,2,Terauchi Masaharu 1,2,Tsujita Takuji 1,2,Nakayama Takahiro 2,Yamauchi Yasuhiro 2,Nagatomi Takaharu 1,Takai Yoshizo 1,Yamauchi Yasushi 3 |
| 8 | Influence of Si doping on surface states of MgO thin films | Osaka Univ. 1,Panasonic Corporation 2@*Fukada Mutsumu 1,Nishitani Mikihiko 1,2,Terauchi Masaharu 1,2,Morita Yukihiro 1,2,Kurashiki Tetsusei 1 |
| 9 | Measurement of Ion-Induced Secondary Electron Yield of MgO Thin Film of 50 nm Thickness using Pulsed-Ion Beam Irradiation
| Osaka Univ.1, Panasonic Corp2@*Murasawa Yuko 1, Yamauchi Ikuma 1, Yoshino Kyohei 1,2, Nagatomi Takaharu 1, Takai Yoshizo 1, Morita Yukihiro 1,2, Nishitani Mikihiko 1,2, Kitagawa Masathoshi 2
|
| 10 | Second harmonic generation from 1D aligned gold nanoparticles | Yokohama Nat'l Univ. 1,FHI. 2,Freie Univ Berlin. 3,Univ. of Tsukuba. 4,Nat'l Defence Academy. 5@*Masafumi Kudo 1, Toru Shimada 2 3, Atushi Kubo 4, Masahiro Kitajima 5, Masatoshi Tanaka 1, Takanori Suzuki 5 |
| 11 | Real-time SR-PES evaluation on the formation of a few monolayer
thermal oxide on Si(110) surface
| Tohoku Univ. 1,Japan Atomic Energy Agency 2@*Yasushi Suzuki 1,Yoshihisa Yamamoto 1,Maki Suemitsu 1,Akitaka Yoshigoe 2,Yuden Teraoka 2 |
| 12 | Real-time observation of oxide and oxynitride formation processes on Si(001) by means of surface differential reflectance spectroscopy and reflectance difference spectroscopy | Yokohama Nat'l Univ. 1, Nat'l Defense Academy 2@*Shin-ya Ohno 1, Fumitake Mitobe 1, Junya Koizumi 1, Toshiyuki Ochiai 1, Takanori Suzuki 2, Ken-ichi Shudo 1, Masatoshi Tanaka 1 |
| 13 | Photon-Stimulated Desorption from Water and Methane coadsorbed on the surface of Rare Gas Solids
| Gakushuin Univ. 1@¦Daigo Matsumoto 1, Akihiro Hagiya 1, Haruka Murai 1, Takashi Miura 1, Ichiro Arakawa 1 |
| 14 | Work function measurement of vanadium carbide thin film by ultraviolet photoelectron spectroscopy | WINTEC 1, SEAVAC 2, AMPI 3@*Shigemoto Akihiko 1, Yamashita Munenori 1, Imanishi Toshito 1,
Tokieda Kentaro 1, Itoh Osamu 1, Maeda Yasukatsu 1, Amano Tomoko 2,
Yamamoto Ryouzo 2, Kitayama Suetsugu 3
|
| ’ | 15 | Electronic states of the pyrazine-adsorbed Si(001) surface | Shizuoka Univ. Res. Inst. of Electronics 1@*Hirokazu Yokohara 1,Chihiro Kunihara 1,Masaru Shimomura 1 |
| 16 | Initial stage of Pd/Ni(111) system | Osaka Pref. Univ. 1, Nagoya Univ. 2, Tokyo Univ. of Science 3, Toyota Technological Institute 4, Osaka City Univ. 5,
@*Umezawa Kenji 1, Ohira Yutaka 2, Hara Shinsuke 3, Yoshimura Masamichi 4, Fukuda Tsuneo 5 |
| 17 | Theoretical analysis for NO adsorption on the catalysis surface | Osaka Univ.@Kishi Hirofumi, Kasai Hideaki |
| 18 | Stranski-Krastanov Growth of Cu on Ni(110) surfaces | Osaka City Univ. 1,Osaka Prefecture Univ. 2,@*Fukuda Tsuneo1,Yasui Takeshi1,Umezawa Kenji2,Nakayama Hiroshi1 |
| ’ | 19 | STM studies of silicon on Au(111) surface | Shibaura Inst. of Tech. 1@*Genda Jumpei 1, Kyuno Kentaro 1 |
| ’ | 20 | Crystal growth of polycrystalline Ge by metal-induced crystallization | Shibaura Inst. of Tech.1@*Miura Masahiro 1, Kyuno Kentaro 2 |
| 21 | Thin film formation mechanism with Heat Beam technology | Philtech Inc.@*Naomi Mura 1, Shinji Nishihara 1, Noriyoshi Shimizu 1, Yuji Furumura 1 |
| 22 | Adsorption and dissociation of water molecule on the Ώ-Al2O3(0001) surface | ITC Univ. Toyama. 1, Graduate School of S.E.R Univ. Toyama. 2@Nunomura Norio 1, Satoshi Sunada 2 |
| 23 | Observation of surface and interface magnetism of Fe/Ni/Cu(100) thin films by the depth-resolved XMCD technique | IMSS, KEK 1, JST-CREST 2@*Amemiya Kenta 1,2, Sakamaki Masako 1 |
| 24 | Exploring the interface magnetism of Au/Co/Au(111) thin films by means of depth-resolved XMCD | IMSS, KEK 1@*Sakamaki Masako 1, Amemiya Kenta 1 |
| 25 | Adsorption Structure of Phenylphosphonic Acid on Cu(111) and Ag(111) Surfaces | NIMS 1,Charles Univ. 2@*Yagyu Shinjiro 1, Yoshitake Michiko 1, Tsud Nataliya 2, Chikyow Toyohiro 1
|
| 6.5 Surface Physics and Vacuum |
| March 18 |
| 18p-P7 - 1`25 |
| |
18p-P7 - 1`25 @Poster Session 13:00`15:00 |
| 1 | Controlling interface terminating species between metal and alumina based on thermodynamics | National Institute for Materials Science 1@*Michiko Yoshitake 1, Slavomir Nemsak 1 |
| 2 | General relationship between interface terminating species and band offset at metal - alumina interfaces | National Institute for Materials Science 1@Michiko Yoshitake 1, Slavomir Nemsak 1, Shinjiro Yagyu 1, Toyohiro Chikyow 1 |
| £ | 3 | H adsorption at Ag/Si interfaces in epitaxially grown Ag films on Si(111)7~7 substrates | Tokyo Institute of Technology,Department of Materials Science & Engineering@*Lin Shi, Yuki Aoki and Hiroyuki Hirayama |
| ’ | 4 | Developing MEMS device to observe shear deformation at nano-scale interface | The Univ. of Tokyo@*Takaaki Sato 1, Tadashi Ishida 1, Hiroyuki Fujita 1 |
| 5 | Molecular Dynamics Simulation of Shear and Friction between Opposing Si Tips | Dept., Mat. & Life Sci., Seikei Univ. 1, IIS, Univ. of Tokyo 2@*Takahiro Ishikawa 1, Noriaki Itamura 1, Takaaki Sato 2, Tadashi Ishida 2, Hiroyuki Fujita 2, Naruo Sasaki 1 |
| 6 | TEM observation of formation and rotation of nanoball between DLC probes by frictional motion | Inst. of Industrial Science Unv. of Tokyo 1, Univ. of Tokyo 2@*Nabeya Shinsuke 1, Ishida Tadashi 1, Kometani Reo 2, Fujita Hiroyuki 1 |
| 7 | Influence of Subpeaks on Si-O-Si Stretching Vibration at the SiO2/Si(100) Interface | AIST 1@*Nakamura Ken 1,Kurokawa Akira 1,Nonaka Hidehiko 1,Ichimura Shingo 1 |
| 8 | The effect of hydrogen gas on nucleation of pentacene | Tokyo Univ.1,2@*Tsuboi Hiromasa 1,Tsuruma Yuki 1,Kanamori Yoshio 2,Saiki Koichiro 1,2 |
| 9 | Formation process and optical property of epitaxial GaSb thin films on Si substrates covered with ultrathin Si oxide films | The Univ. of Tokyo 1, Osaka Univ. 2@*Takafumi Miwa 1, Yoshiaki Nakamura 2, Masakazu Ichikawa 1 |
| 10 |
Counter Flow Ionization Gauge III | Fac.Eng. Kobe Univ. 1, Kure Coll.of Tech. 2@Tatsuya Sugauchi 1, Shinya Hori 1, Toru Kanaji 1, Makoto Tanaka 2, Toshio Urano 1 |
| 11 | Au(core)/Pd(shell) Structure Analyzed by High-resolution Ion Scattering | Ritsumeikan Univ. 1, AIST Kansai 2, Tokyo Univ. Sci. Yamaguchi 3
@Matsumoto Hisashi 1, Mitsuhara Kei 1, Visikovskiy Anton 1, Akita Tomoki 2, Tishima Naoki 3, Kido Yoshiaki 1 |
| ’ | 12 | Evalution of magnesium oxide films derived by heat process | Ryukoku Univ 1,Hyogo Pref. Inst. of Tech 2,RIKEN KEIKI Co., Ltd 3@*Nakamura Yusuke 1,Yoshioka Hideki 2,Nakajima Hideki 3,Yamamoto Shinichi |
| 13 | Soft X-ray Photoemission Electron Microscopy of SiGe nanocompounds
near Elemental Absorption Edges | RIEC, Tohoku Univ. 1, Faculty of Science and Technology, Hirosaki Univ. 2, JASRI/SPring-8 3@Hirokazu Fukidome1, Arnold Alguno1, Yoshiharu Enta2, Maki Suemitsu1,
Masato Kotsugi3, Takuo Ohkouchi3, Toyohiko Kinoshita3, Yoshio Watanabe3 |
| 14 | Constructing Self-Organized Structures on Silicon Surfaces by Dried Metal Complex Solutions | Yokohama National Univ. 1@*Nishikura Keigo 1, Takahide Oya 1 |
| ’ | 15 | Electron beam irradiation-induced surface reduction of SnO2 on TiO2(110)-(1~2) surface | MSL Tokyo Teac.@*Yutaro Komuro 1,Yuji Matsumoto 1 |
| 16 | Substrate defect-assisted diffusion of NaCl thin layer adsorbed on Au(111) surface | Tohoku Univ. 1@*Katano Satoshi 1, Uehara Yoichi 1 |
| 17 | STM Simulation on Si(110) Surface with Adsorbed O Atoms by First Principles Calculation | Okayama Pref. Univ. 1@Nagasawa Takahiro 1, Shiba Seiji 1, Sueoka Koji 1 |
| 18 | Magnetic property of Fe/Fe oxide core-shell clusters formed on GaN(0001) | Osaka Univ. ISIR-SANKEN 1@Furuya Takaaki 1, Sotani Motoki 1, Ichihara Hiroya 1, Hasegawa Shigehiko 1, Asahi Hajime 1 |
| ’ | 19 | Retraction-Speed Dependency of Tensile Test of Silicon Nanocontact in TEM | Inst. Industrial Science, Univ. Tokyo@Tadashi Ishida 1, Hiroyuki Fujita 1 |
| 20 | Real-time optical measurement of potassium adsorption on a Si(001) surface by Reflectance difference spectroscopy (RDS) .
| Yokohama Nat'l Univ. 1, Nat'l Defence Academy. 2@*Masahiro Morimoto 1, Shinya Ohno 1, Takanori Suzuki 2, Masatoshi Tanaka 1 |
| 21 | Time Dependence of Thickness Measured by XRR Method for Water-dipped Silicon Thermal Oxide Thin Film | AIST 1@*Odaka Kenji 1,Azuma Yasushi 1,Zhang Lulu 1,Fujimoto Toshiyuki 1,Kojima Isao 1,Kurokawa Akira 1 |
| 22 | Organic thin films on the terminated Si(110)-16~2 single domain surfaces | Tsukuba Univ. 1,JAEA QuBS 2@*Yokoyama Yuta 1,2, Yamada Yoichi 1, Sasaki Masahiro 1 |
| 23 | STM/STS on Carbon adsorbed Au(111) | Kyoto Univ. 1
@*Kurokawa Shu 1, Yoshino Yusuke 1, Sakai Akira 1
|
| 24 | Growth-modes of Alkali metal atoms on Si surfaces by using
Second Harmonic Generation
| Nat'l Defense Academy 1, Yokohama Nat'l Univ. 2@Fujiwara Kenichi 1, Oka Yoshinori 1, Nishioka Hiroaki 2, Momose Tatsuya 2, Tanaka Masatoshi 2, *Suzuki Takanori 1 |
| 25 | Local electronic structure and band-arraignment of C60 monolayer on Cu(111) | Tsukuba Univ. 1, Idealstar 2@Keisuke Kato1, Takuto Nakayama1, Morihiko Saida2, Kenji Omote2, Kuniyoshi Yokoo2,
*Yoichi Yamada1, Masahiro Sasaki1
|
| 6.5 Surface Physics and Vacuum |
| March 18 |
| 18p-P8 - 1`15 |
| |
18p-P8 - 1`15@Poster Session 15:30`17:30 |
| 1 | Self-organization of comb domains on sapphire surfaces | Yokohama National Univ. 1@*Komurasaki Hiroki 1,Isono Toshinari 1,Tsukamoto Takahiro 1,Ogino Toshio 1 |
| 2 | Characterization of crystallinity and photoluminescence of the Ge QD nanoarray on
ultrathin SiO2/Si(001) substrates using block copolomer PEOm-b-PMA(Az)n | The Univ. of Tokyo 1, Osaka Univ. 2, RIKEN 3, Tokyo Inst. of Tech. 4@*Akiyuki Murayama 1, Yoshiaki Nakamura 2, Ryoko Watanabe 3, Tomokazu Iyoda 4, Masakazu Ichikawa 1 |
| 3 | Observation of Fe nanodots in external magnetic field by spin-polarized STM | Osaka Univ. ISIR 1@Ichihara Hiroya 1, Sotani Motoki 1, Furuya Takaaki 1, Hasegawa Shigehiko 1, Asahi Hajime 1 |
| 4 | Chemical domain control on sapphire surfaces by wet etching | Yokohama National Univ 1@*Takahashi Yasuhiro 1,Ogino Toshio 1 |
| 5 | Arrangement control of step-hybrids on sapphire surfaces | Yokohama National Univ. 1@*Taguchi Shunsuke 1,Takahashi Yasuhiro 1,Ogino Toshio 1 |
| 6 | Quantum Theory of Surface Plasmon in Metal Nanostructures | Univ. Tokyo@Ichikawa Masakazu 1 |
| 7 | Electronic Structure of apatite-type lanthanum silicate by Soft-X-Ray Spectroscopy | Tokyo Univ. Sci. 1, NIMS 2@Fukawa Hiroyuki 1, Kobayashi Kiyoshi 2, *Higuchi Tohru 1 |
| 8 | First-principles analysis of Graphene formation process formed by C2H2 molecules on Ferromagnetic bcc-Fe (110) surface | FUJITSU LABORATORIES LTD.@*Ikeda Minoru 1 Yamasaki Takahiro 1 Kaneta Chioko 1 |
| 9 | Field evaporation of aluminum in an atom probe | Univ. of Tokyo 1, Inst. of Industrial Science, Univ. of Tokyo 2@*Yasuko Kajiwara 1, Norihito Mayama 2, Tatsuo Iwata 2, Masanori Owari 2 |
| 10 | Mechanism of Charging Stabilization on Dielectrics under Electron Beam Irradiation | Hitachi, Ltd., Central Research Laboratory 1@*Koyama Hikaru 1, Kimura Yoshinobu 1
|
| 11 | Dynamics of Charging at Dielectric Surface under Electron Beam Irradiation | Hitachi CRL 1,Hitachi High-Technologies 2@*Tsuno Natsuki 1,Ominami Yusuke 2,Shinada Hiroyuki 1,Kimura Yosinobu 1,Makino Hirosi 1 |
| 12 | Modeling of Local Charging-up on dielectrics Induced by Electron Beam Irradiation | Central Research Laboratory, Hitachi, Ltd. 1@*Cheng Zhaohui1,Koyama Hikaru1,Kimura Yoshinobu1,Shinada Hiroyuki1 |
| 13 | Inspection technique to detect the plug-plug short using circuit simulation | Hitachi Ltd. Central Research Laboratory 1,Hitachi High-Technologies Corporation 2@*Makino Hiroshi 1,Yano Tasuku 1,Doi Ayumi 2,Nozoe Mari 2 |
| 14 | Correlation of tilt angle of electron cloud of top surface atoms observed by EUPS
with catalytic activity of powder catalysts for mobile exhaust | AIST NIRC1, N.E.Chemcat Corp.2@Tomoaki Ishitsuka1,Tomoaki Ito2,Makoto Nagata2, Toshihisa Tomie1 |
| 15 | Low energy atom scattering studies on organic thin films | Tsukuba Univ. 1, JAEA QuBS 2@*Yuki Satake 1, Chihiro Sugawara 1, Yuta Yokoyama 1,2, Ryuta Okada 1, Yoichi Yamada 1,Masahiro Sasaki 1 |
| 6.6 Probe Microscopy |
| March 17 9:15`12:15 |
| 17a-TS - 1`11 |
| £ | 1 | Visualization of Fermifs Golden Rule through STM Light Emission | RIKEN 1, Univ. of Duisburg-Essen 2, Univ. of California-Irvine 3@*Chi Chen 1, Christian A. Bobisch 2, Wilson Ho 3 |
| 2 | STM-electroluminescence spectroscopy of GaAs/AlGaAs double hetero pin-structure | The Univ. of Tokyo 1, Osaka Univ. 2, Dept. of Advanced Material Science, The Univ. of Tokyo 3@Kentaro Watanabe 1, Yoshiaki Nakamura 2, Shigeyuki Kuboya 3, Ryuji Katayama 3, Kentaro Onabe 3, Masakazu Ichikawa 1 |
| 3 | Electric Field-Enhanced Scanning Tunneling Microscope Light Emission Vibrational Spectroscopy of Graphite Substrate with the Presence of Ag Nanoparticle | RIEC, Tohoku Univ. 1@*Watanabe Shota 1, Katano Satoshi 1, Uehara Yoichi 1 |
| 4 | Theoretical Analysis of Scanning Tunneling Microscope Light Emission Spectra Using Finite Difference Time Domain Method | RIEC, Tohoku Univ. 1@*Iida Wataru 1, Katano Satoshi 1, Uehara Yoichi 1 |
| 5 | Phonon-induced structure in the STM light emission spectra of Sb2Te3 | RIEC, Tohoku Univ. 1, AIST CAN-FOR 2@S. Onaga 1, M. Kuwahara 2, S. Watanabe 1, S. Katano 1, *Y. Uehara 1
|
| 6 | Prism-coupled scanning tunneling microscope light emission spectroscopy of self-assembled monolayer on Au film | RIEC, Tohoku Univ. 1, Osaka sangyo Univ. 2@* Sanbongi Tomonori 1, Ahamed Jamal Uddin 1, Katano Satoshi 1, Usami Kiyoaki 2, Uehara Yoichi 1 |
| | | Break 11:30`11:45 | |
| 7 | Comparison of adsorption state of diamino-p-terphenyl on Si(100) with that on Si(111) | JAIST 1, Kanazawa Univ 2, SORST JST 3@*Takashi Nishimura 1, Hideyuki Murata 1,
Akira Sasahara 1, Toyoko Arai 2,3, Masahiko Tomitori 1 |
| 8 | Observation of Bi on the Ultra thin Ag Film Surfaces deposited on Si(111)7x7 | Tokyo Tech@Observation of Bi on the Ultra thin Ag Film Surfaces deposited on Si(111)7x7 |
| 9 | Study of the atom desorption on H/Si(113) surface by STM lithography technique | Tokyo University of Science Univ. 1, Tokyo University of Science Univ. 2@*Suzuki Toru 1, Fuse Kazuhiro 1, Hara Shinsuke 1, Irokawa Katsumi 2, Kawazu Akira 2, Miki Hirofumi 2, Fujishiro Hiroki 1 |
| 10 | Surface Reconstruction in Al/Si(110) Studied by STM | Toyota Tech. Inst. 1@*Matsuoka Daiki 1, Yoshimura Masamichi 1 |
| 11 | Nano-scale Elemental Analysis using SR-STM System
-Characteristics Evaluation of Elemental Contrast- | Osaka Univ. 1,RIKEN/SPring-8 2,JST(PREST) 3,Inst. for Molecular Science 4,NIMS 5@Notsu Hiroshi 1 2,Saito Akira 1 2 3,Tanaka Takehiro 1 2,Takagi Yasumasa 2 4,Ohzeki Gohzo 1 2,Tanaka Yoshihito 2,Kohmura Yoshiki 2,Akai Megumi 1 3,Ishikawa Tetsuya 2, Shin Shigi 2,Kuwahara Yuji 1 2,Aono Masakazu 5 |
| 6.6 Probe Microscopy |
| March 18 10:00`18:15 |
| 18a-TS - 1`11 |
| | 1 | The Electronic Structure of Atomic Defects on Titanium Dioxide Surfaces | IIAIR, Tohuku Univ. 1, RIKEN, 2, IMRAM, Tohoku Univ. 3, RIKEN, 4, Tokyo Tech. 5,The Open Univ. Jpn. 6, Univ. Tokyo 7, Univ. of Pittsburgh 8, Donostia Inter. Phys. Center 9, Univ. of Sci. & Tech. of China 10.
@Taketoshi Minato 1, 2, Yasuyuki Sainoo 3, Yousoo Kim 2, 4, Kato S. Hiroyuki 2, Aika Ken-ichi 5,6, Kawai Maki 2,7, Jin Zhao 8, Petek Hrvoje 8, 9, Huang Tian 10, He Wei 10, Wang Bing 10, Wang Zhuo 10, Zhao Yao 10, Yang Jinlong 10, Hou J.G. 10
|
| 2 | Atomic-level observation of a TiO2 surface structure induced by dopants | Kyoto Inst. Tech.@*Nohara Nanae 1, Okada Arifumi 1, Ishikawa Yo-ichi 1 |
| 3 | Electronic states of sulfur vacancies formed on a MoS2
surface (2) | NIMS 1,CNRS 2@*Nagisa Kodama 1, Tsuyoshi Hasegawa 1, Yuji Okawa 1, Toru Tsuruoka 1,Christian Joachim 1,2, Masakazu Aono 1 |
| 4 | Size control of carbon nanofiber probes fabricated by ion irradiation method | Nagoya Inst. Technol. 1, Olympus Co. Ltd. 2@*K. Inaba 1, Y. Sugita 1, T. Suzuki 1, A. Hayashi 1, Y. Hayashi 1, M. Tanemura 1, M. Kitazawa 2 and R. Ohta 2 |
| ’ | 5 | A few nm order tip apex sharpened by field-assisted etching | Kyushu Univ. 1,Kyushu Univ. 2@*Onoda Jo,Mizuno Seigi,Ago Hiroki |
| | | Break 11:15`11:30 | |
| ’ | 6 | Observation on self-assembled monolayer in organic solvents with dynamic mode atomic force microscopy
| Dept. of Chem. Kobe Univ. 1, Shimadzu Co., Ltd. 2, JST/Adv. Meas. and Analysis 3,
Dept. of Electro. Sci. and Eng., Kyoto Univ. 4, Innovative Collaboration Center, Kyoto Univ. 5
@*Takumi Hiasa 1, Kenjiro Kimura 1, Hiroshi Onishi 1, Masahiro Ohta 2, Kazuyuki Watanabe 2, Masayoshi Yamazaki 2, Ryohei Kokawa 1,2,3, Noriaki Oyabu 3,4, Kei Kobayashi 5, and Hirofumi Yamada 4
|
| ’ | 7 | A Consideration on Stable Self-Oscillation Criteria in FM-AFM | Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Innovative Collaboration Center, Kyoto Univ. 2@*Hosokawa Yoshihiro 1,Kobayashi Kei 2,Yamada Hirofumi 1,Matsushige Kazumi 1 |
| ’ | 8 | Development of Real-time Phase Correction Technique for FM-AFM | Dept. of Eng. Kanazawa Univ. 1, FSO Kanazawa Univ. 2, PRESTO/JST 3@*Yoshioka Shunsuke 1, Fukuma Takeshi 1,2,3 |
| ’ | 9 | Atomic Resolution Investigation of Alkali Halide Crystals by FM-AFM in Saturated Solution | Osaka Univ. 1@*Sho Yamane 1, Taiki Masuda 1, Ken Nagashima 1, Masayuki Abe 1, Seizo Morita 1 |
| ’ | 10 | Frequency Modulation AFM in Ionic Liquids using Quartz Tuning Fork Sensors | Kyoto Univ. 1@*Fujimura Motohiko 1, Ichii Takashi 1, Murase Kuniaki 1, Sugimura Hiroyuki 1 |
| ’ | 11 | Deterioration of mechanical characteristics of micro-cantilevers by plasma induced damage | Tohoku Univ. IFS 1, Tohoku Univ. Eng. 2@*Maju Tomura 1, Chi-Hsien Huang 1, Yusuke Yoshida 2, Takahito Ono 2, Seiji Samukawa 1 |
| | | Lunch 13:00`14:00 | |
| 18p-TS - 1`16 |
| | 1 | Deposition of Glycerol Solution using Nano-inkjet Printing Method | Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Innovative Collaboration Center, Kyoto Univ. 2@*Kiyohiro Kaisei 1, Kei Kobayashi 2, Hirofumi Yamada 1, Kazumi Matsushige 1 |
| 2 | Inspection of tip oscillation of tuning fork probe for multiple-scanning-probe force microscope | NIMS 1, HORIBA Ltd. 2, Univ. of Tsukuba 3@Seiji Higuchi 1,2CHiromi Kuramochi 1, *Osamu Kubo 1, Shintaro Masuda 2, Yoshitaka Shingaya 1, Tomonobu Nakayama 1,3 |
| 3 | Sensitivity of heat sensor with unimorph cantilever shape at ambient atmosphere | Tohoku Univ. 1, CCNY 2@*Toda Masaya 1, Liu Fei 2, Voiculescu Ioana 2, Ono Takahito 1 |
| 4 | Introduction of the FM force detection to ambient atomic force microscope | Inst. for Solid State Phys., Univ. of Tokyo 1@*Masayuki Hamada 1,Toyoaki Eguchi 1,Yukio Hasegawa 1 |
| 5 | FM-AFM imaging using electrostatic force excitation in liquid | Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, National Institute of AIST 2, JST/Adv. Meas. & Analysis 3, Innovative Collaboration Center, Kyoto Univ. 4@*Umeda Ken-ichi 1, Hirata Yoshiki 2, Oyabu Noriaki 1,3, Kobayashi Kei 4, Matsushige Kazumi 1, Yamada Hirofumi 1 |
| 6 | Study on Correlation between Apparent Q-factor of Cantilever in Fluid and Its Oscillation Frequency | Dept. of Electronic Sci. & Eng., Kyoto Univ. 1,Innovative Collaboration Center, Kyoto Univ. 2@*Kobayashi Yotaro 1,Yoshida Shinpei 1,Kobayashi Kei 2,Noda Kei 1,Yamada Hirofumi 1,Matsushige Kazumi 1 |
| 7 | Experimental Investigation of Force Sensitivity Enhancement of Phase Modulation AFM in Liquid by Q-control | Osaka Univ. 1, JST-CREST 2@Kobayashi Naritaka 1, Li Yan Jun 1,2, Naitoh Yoshitaka 1,2, Kageshima Masami 1,2, Sugawara Yasuhiro 1,2 |
| 8 | Development of AFM Controller for Multi-dimensional Mapping of Various Material Properties | JST/Adv. Meas. & Analysis1, Kyoto Univ. 2, Innovative Collaboration Center Kyoto Univ.3@*Oyabu Noriaki 1,2, Ido Shinichiro 2, Suzuki Kazuhiro 2, Umeda Ken-ichi 2, Kobayashi Kei 3, Yamada Hirofumi 2
|
| 9 | High-Resolution Imaging and Hydration Structure Measurement of Biomolecules in Liquids by FM-AFM (2) | Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, JST/Adv. Meas. & Analysis 2,
Innovative Collaboration Center, Kyoto Univ. 3, AIST 4@*Shinichiro Ido 1, Noriaki Oyabu 1,2, Kei Kobayashi 3, Yoshiki Hirata 4, Kazumi Matsushige 1, Hirofumi Yamada 1,2 |
| | | Break 16:15`16:30 | |
| 10 | Lateral Manipulation of Single Cu Atoms on Cu(110)-O Surface and 2-Dimensinal Force Spectroscopy with Low Temperature Atomic Force Microscopy. | Dept. of Applied Physics, Osaka Univ. 1@ *Yukinori Kinoshita 1, Takuhei Satoh 1, Yan Jun Li 1, Yoshitaka Naitoh 1, Masami Kageshima 1, Yasuhiro Sugawara 1
|
| 11 | Deliquescence and Ion Segregation of Alkali Halide Nanocrystals on SiO2 | Osaka Univ. 1, UC Berkeley 2, Lawrence Berkeley National Lab.3, National Tsing Hua Univ.4, CSIC-ICN 5@*Kenta Arima 1, Peng Jiang 2,3, Deng-Sung Lin 4, Albert Verdaguer 5, Miquel Salmeron 2,3 |
| 12 | Force spectroscopy on TPA by FM-AFM | Kanazawa Univ. 1, JAIST 2@*Yamatani Hiroshi 1, Arai Toyoko 1, Murata Hideyuki 2 |
| 13 | High Resolution Imaging in Liquid using FM-AFM ? | JEOL 1, NICT 2, Innovative Collaboration Center, Kyoto Univ. 3, Dept. of Electronic Sci. & Eng., Kyoto Univ. 4@*Katsuyuki Suzuki 1, Shin-ichi Kitamura 1, Shukichi Tanaka 2, Kei Kobayashi 3, Hirofumi Yamada 4 |
| 14 | Development of high-resolution FM-AFM operated in air or liquid
-High resolution imaging in liquid and local hydration structure analysis- | JST 1, Shimadzu 2, Dept. of Electronic Sci. & Eng. Kyoto Univ. 3,
Innovative Collaboration Center, Kyoto Univ. 4, Dept. of Chem., Kobe Univ. 5@Yamazaki Masashi 1,2, *Ohta Masahiro 1,2, Watanabe Kazuyuki 1,2, Kokawa Ryohei 1,2, Oyabu Noriaki 1,3, Kobayashi Kei 1,4, Yamada Hirofumi 1,3, Onishi Hiroshi 1,5 |
| 15 | High-Resolution Imaging of Graphite (0001) in Aqueous Solution by FM-AFM | Dept. of Electronic Sci. and Eng., Kyoto Univ. 1, JST/Adv. Meas. and Analysis 2, Innovative Collaboration Center, Kyoto Univ. 3@Suzuki Kazuhiro 1, Oyabu Noriaki 1,2, Kobayashi Kei 3, Matsushige Kazumi 1, Yamada Hirofumi 1 |
| £ | 16 | Universality of Single Cells Rheology Investigated by Atomic Force Microscopy | Hokkaido Univ. 1@*Cai PingGen 1, Mizutani Yusuke 1, Miyaoka Atsushi 1, Tsuchiya Masahiro 1, Kawahara Koichi 1, Okajima Takaharu 1 |
| 6.6 Probe Microscopy |
| March 20 9:00`12:00 |
| 20a-TR - 1`11 |
| 1 | Investigation of Carbon Nanotube Defects by Stroboscopic Scanning Gate Microscopy | Department of electronic science and engineering, Kyoto Univ. 1,Innovative Collaboration Center, Kyoto Univ. 2@*Miyato Yuji 1,Kobayashi Kei 2,Matsushige Kazumi 1,Yamada Hirofumi 1 |
| 2 | Single Electron Counting on Au Nanoparticle Due to Coulomb Blockade Phenomenon by AFS at Room Temperature | Tokyo Inst. Tech. 1, Tukuba Univ. 2, CREST-JST 3@*Hattori Shigeki 1,3; Kano Shinya 1,3; Azuma Yasuo 1,3; Kanehara Masayuki 2,3; Teranishi Toshiharu 2,3; Majima Yutaka 1,3 |
| 3 | Semiconductor Carrier Profiling using Kelvin-probe Force Microscopy
and Scanning Capacitance Force Microscopy | Dept. of Electronic Sci. &Eng. Kyoto Univ. 1,Innovative Collaboration Center,Kyoto Univ. 2@*Keiji Takai 1,Kei Kobayashi 2,Hirofumi Yamada 1,Kazumi Matsushige 1 |
| 4 | Observation of Electrostatic Force Spectra on InAs Quantum Dots on GaAs -II- | IIS 1 and INQIE 2, the Univ. of Tokyo@*Shunsuke Yamada1, Takuji Takahashi 1,2 |
| 5 | Characterization of InAs wires by dual light illumination method in STM | IIS1 & INQIE 2, Univ. of Tokyo@*Katsui Shuichi 1, Takahashi Takuji 1,2 |
| 6 | Analyses of photo-induced hole transition process from SiGe dot by using time-resolved EFM | NIMS 1, Univ. of Manchester 2, Diamond Light Source Ltd. 3@*Ishii Masashi 1, Hamilton Bruce 2, S. Dhesi Sarnjeet 3 |
| | | Break 11:30`11:45 | |
| 7 | Two Dimentional Dopant Profiling of Metal-Oxide-Semiconductor Field-Effect Transistor by using Scanning Nonlinear Dielectric Microscopy
| RIEC, Touhoku Univ. 1,Fujitsu Lab. 2@*Higuchi Osamu 1,Tyou Yasuo 1,Honda Kouitirou 2 |
| 8 | Imaging of SrTiO3 surface by NC-SNDM and analysis of its mechanism | RIEC, Tohoku Univ.@Nobuhiro Kin, Yasuo Cho |
| 9 | Improvement of spatial resolution by frequency modulated magnetic force microscopy (FM-MFM) | Akita Univ. 1, JST/Adv. Meas. & Analysis 2@*Saito Hitoshi 1,2, Lu Wei 1,2, Egawa Genta 1,2, Yoshimura Satoru 1,2 |
| 10 | Optimization of MFM probe for detecting current-induced magnetic field | Osaka Univ CQSTEC.1@Kajiwara Masahiro 1,*Kubo Kazuya 1,Murakami Katsuhisa 1,Abo Satoshi 1,Wakaya Fujio 1,Takai Mikio 1 |
| 11 | Development of Dual-Probe AFM using Optical Beam Deflection Sensors with Vertically Incident Laser Beams
| Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Innovative Collaboration Center, Kyoto Univ. 2
@*Eika Tsunemi 1, Noriaki Oyabu 1, Kei Kobayashi 2, Kazumi Matsushige 1, Hirofumi Yamada 1 |